Number | Date | Country | Kind |
---|---|---|---|
57-61440 | Apr 1982 | JP | |
57-64892 | Apr 1982 | JP | |
57-143786 | Aug 1982 | JP |
This is a Continuation of Application Ser. No. 08/320,729 filed Oct. 11, 1994, which in turn is a Continuation Application of Ser. No. 07/901,432, filed Jun. 19, 1992, now abandoned which is a Continuation-In-Part of Ser. No. 07/203,548, filed May 31, 1988, U.S. Pat. No. 5,124,768 which is a Continuation of Ser. No. 06/862,151, filed May 12, 1986, now abandoned which is a Continuation of Ser. No. 06/484,046, filed Apr. 11, 1983, now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
3258663 | Weimer | Jun 1966 | |
3513042 | Hagon | May 1970 | |
3765011 | Sawyer et al. | Oct 1973 | |
3840695 | Fischer | Oct 1974 | |
4112333 | Asars et al. | Sep 1978 | |
4119992 | Ipri et al. | Oct 1978 | |
4177473 | Ovshinsky | Dec 1979 | |
4182965 | Pleiderer | Jan 1980 | |
4199384 | Hsu | Apr 1980 | |
4431271 | Okubo | Feb 1984 | |
4442448 | Shimbo | Apr 1984 | |
4455495 | Masuhara et al. | Jun 1984 | |
4582395 | Morozumi | Apr 1986 | |
4623908 | Oshima et al. | Nov 1986 |
Number | Date | Country |
---|---|---|
3130407 | Jul 1988 | DE |
51396 | Dec 1982 | EP |
1178869 | Jul 1967 | GB |
1267975 | Mar 1972 | GB |
1358416 | Jul 1974 | GB |
2067353 | Dec 1980 | GB |
2105905 | Jul 1981 | GB |
2070857 | Sep 1981 | GB |
2067353 | Sep 1981 | GB |
2081018 | Feb 1982 | GB |
50-8483 | Jan 1975 | JP |
55-98868 | Jul 1980 | JP |
57-132191 | Feb 1981 | JP |
57-10266 | Jan 1982 | JP |
57-61440 | Apr 1982 | JP |
56-135968 | Oct 1991 | JP |
Entry |
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“Controlling Polysilicon TFT Characteristics,” Oyo Denshi Bussei Bunkakai Kenkyu Hoku, No. 427, pp. 25-30 (1989). |
Thomas W. Little, et al., “Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator,” Japanese Journal of Applied Physics, V. 30, No. 12B, Dec. 1991, pp. 3724-3728. |
Hiroyuki Ohshima, et al., “Future Trends for TFT Integrated Circuits on Glass Substrates,” IEEE 1989, pp. IEDM 89157-160. |
Anthony Juliana, et al., “Thin-Film Polysilicon Devices for Flat-Panel Display Circuitry,” SID International Symposium Digest of Technical Papers, May 1982, pp. 38-39. |
Shinji Morozumi, “Active Matrix Addressed Liquid-Crystal Displays,” 1985 International Display Research Conference, 1985, IEEE, p. 9-13. |
N. Sasaki, et al., “Effect of Silicon Film Thickness on Threshold Voltage of SOS-MOSFETs,” Solid State Electronics, V. 22, No. 4-E, pp. 417-421. |
S. Chapman, et al., “Polysilicon Switches for Display Devices,” IBM Technical Disclosure Bulletin, V. 23, No. 1, Jun. 1980, pp. 351-352. |
M. Matsui, et al., “Polycrystalline-Silicon Thin Film Transistors on Glass,” Appl. Phys Lett. 37 (10), Nov. 15, 1980, pp. 936-937. |
Number | Date | Country | |
---|---|---|---|
Parent | 08/320729 | Oct 1994 | US |
Child | 08/402374 | US | |
Parent | 07/901432 | Jun 1992 | US |
Child | 08/320729 | US | |
Parent | 06/862151 | May 1986 | US |
Child | 07/203548 | US | |
Parent | 06/484046 | Apr 1983 | US |
Child | 06/862151 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 07/203548 | May 1988 | US |
Child | 07/901432 | US |