characterised by the drain or the source properties

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CPC
H01L29/78618

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/78618characterised by the drain or the source properties

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and method for forming the semicondu...
- Patent number 12,176,390
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,409
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation transistors and back side volta...
- Patent number 12,176,411
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,412
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire/nanosheet device with support portion, method of manufactu...
- Patent number 12,176,393
- Issue date Dec 24, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide semiconductor transistor, method of manufacturing the same, a...
- Patent number 12,170,336
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Kwanghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures for semiconductor devices
- Patent number 12,170,335
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming oxide semiconductor film, semiconductor device,...
- Patent number 12,170,339
- Issue date Dec 17, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of forming the same
- Patent number 12,166,076
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jen-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with stacked transistor structures
- Patent number 12,166,097
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,166,132
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Minhee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with backside power rail and method for formin...
- Patent number 12,165,973
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chung Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet gate-all-around device structures
- Patent number 12,166,042
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate-all-around devices
- Patent number 12,166,075
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method for forming the same
- Patent number 12,165,947
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Sheh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packaged semiconductor devices including backside power rails and m...
- Patent number 12,166,016
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure in semiconductor device and method of forming the same
- Patent number 12,166,074
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,166,113
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor including active contact buried portions
- Patent number 12,159,911
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,938
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Hyojin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,159,942
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared bit lines for memory cells
- Patent number 12,160,985
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including spacer structure for transistors
- Patent number 12,159,912
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for multigate devices with suppressed diffusion
- Patent number 12,159,924
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,939
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Munhyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around structures and manufacturing method thereof
- Patent number 12,154,959
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,154,989
- Issue date Nov 26, 2024
- Japan Display Inc.
- Akihiro Hanada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady

Patents Applicationslast 30 patents

Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONALLY-MODULATED CAPPING LAYER FOR A TRANSISTOR AND METHOD...
- Publication number 20240413247
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...
- Publication number 20240413248
- Publication date Dec 12, 2024
- SAMSUNG DISPLAY CO., LTD.
- Yong Su LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240413167
- Publication date Dec 12, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413216
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Doohyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413252
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seungmin SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240405129
- Publication date Dec 5, 2024
- InnoLux Corporation
- Chin-Lung TING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES
- Publication number 20240405075
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SOURCE/DRAIN REGIONS
- Publication number 20240405070
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH WRAP AROUND SILICIDE LAYER
- Publication number 20240395857
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Rong LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240395891
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240395856
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yi CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELEC...
- Publication number 20240395859
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhi-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE TRANSISTOR STRUCTURE WITH ETCH STOP LAYER
- Publication number 20240395881
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tze-Liang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE WRAP-AROUND CONTACT
- Publication number 20240395889
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER
- Publication number 20240397694
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240395624
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240395941
- Publication date Nov 28, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND STRUCTURES AND MANUFACTURING METHOD THEREOF
- Publication number 20240395890
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Devices with Varying Channel Layers
- Publication number 20240387743
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuan-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240387744
- Publication date Nov 21, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Structure For Semiconductor Device
- Publication number 20240387693
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20240387625
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240387630
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guan-Yao TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387684
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Wen WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE ARCHITECTURE FOR CELL-HEIGHT SCALING
- Publication number 20240387541
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...
- Publication number 20240387629
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387709
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240387626
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the drain or the source properties

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device structure and method for forming the semicondu...

Strained semiconductor FET devices with epitaxial quality improvement

Semiconductor devices and methods of manufacturing thereof

Semiconductor device with isolation transistors and back side volta...

Semiconductor devices and methods of manufacturing thereof

Source/drain feature separation structure

Nanowire/nanosheet device with support portion, method of manufactu...

Oxide semiconductor transistor, method of manufacturing the same, a...

Epitaxial structures for semiconductor devices

Method for forming oxide semiconductor film, semiconductor device,...

Semiconductor device and methods of forming the same

Semiconductor devices with stacked transistor structures

Semiconductor device

Semiconductor device with backside power rail and method for formin...

Stacked nanosheet gate-all-around device structures

Method and structure for gate-all-around devices

Semiconductor devices and method for forming the same

Packaged semiconductor devices including backside power rails and m...

Gate structure in semiconductor device and method of forming the same

Semiconductor device and method of fabricating the same

Semiconductor including active contact buried portions

Semiconductor device

Semiconductor device and method for manufacturing the same

Shared bit lines for memory cells

Integrated circuit including spacer structure for transistors

Structure and method for multigate devices with suppressed diffusion

Semiconductor device

Gate-all-around structures and manufacturing method thereof

Semiconductor device

Non-planar gate all-around device and method of fabrication thereof

Patents Applicationslast 30 patents

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

COMPOSITIONALLY-MODULATED CAPPING LAYER FOR A TRANSISTOR AND METHOD...

THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

ELECTRONIC DEVICE

SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES

TRANSISTOR SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICE WITH WRAP AROUND SILICIDE LAYER

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELEC...

MULTI-GATE TRANSISTOR STRUCTURE WITH ETCH STOP LAYER

GRAPHENE WRAP-AROUND CONTACT

SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE

GATE-ALL-AROUND STRUCTURES AND MANUFACTURING METHOD THEREOF

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

Multigate Devices with Varying Channel Layers

LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

Spacer Structure For Semiconductor Device

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NANOSHEET DEVICE ARCHITECTURE FOR CELL-HEIGHT SCALING

SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME