characterised by the drain or the source properties

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H01L29/78618

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/78618characterised by the drain or the source properties

Industries

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Patents Grantslast 30 patents

Information Patent Grant
3D selective material transformation to integrate 2D material elements
- Patent number 12,272,692
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and display device
- Patent number 12,272,697
- Issue date Apr 8, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate isolation for multigate device
- Patent number 12,272,690
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain for backside source contact
- Patent number 12,272,729
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor with silicon nanowire channel, display substra...
- Patent number 12,272,754
- Issue date Apr 8, 2025
- BOE Technology Group Co., Ltd.
- Jiayu He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film structure, semiconductor device including the same, and s...
- Patent number 12,266,710
- Issue date Apr 1, 2025
- Samsung Electronics Co., Ltd.
- Dukhyun Choe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanostructures device structure with backside contact
- Patent number 12,266,700
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,266,656
- Issue date Apr 1, 2025
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 12,261,204
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 12,261,220
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Woocheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated transistors having gate material passing through a pilla...
- Patent number 12,261,223
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor devices with multi-layer interlayer dielectric structures
- Patent number 12,261,226
- Issue date Mar 25, 2025
- Applied Materials, Inc.
- Yun-Chu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,206
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structures for gate-all-around field effect transistors
- Patent number 12,255,249
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,255,230
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,257
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Mongsong Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide semiconductor thin-film transistor and method of manufacturin...
- Patent number 12,249,652
- Issue date Mar 11, 2025
- Wuhan Tianma Micro-Electronics Co., Ltd.
- Kazushige Takechi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ternary inverter and method of manufacturing the same
- Patent number 12,249,605
- Issue date Mar 11, 2025
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar field effect transistors with 2D material channels
- Patent number 12,249,643
- Issue date Mar 11, 2025
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices having parasitic channel structures
- Patent number 12,249,623
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Cheng Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned backside contact integration for transistors
- Patent number 12,243,913
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Nikhil Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,243,780
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form selective high-k deposition on 2D materials
- Patent number 12,243,920
- Issue date Mar 4, 2025
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature for multigate device performance and method of...
- Patent number 12,243,912
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene wrap-around contact
- Patent number 12,243,915
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including a common gate electrode and me...
- Patent number 12,243,946
- Issue date Mar 4, 2025
- Samsung Electronics Co., Ltd.
- Sooyoung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain recess formation with metal-comprising maski...
- Patent number 12,243,783
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming source/drain features
- Patent number 12,237,232
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OXIDE SEMICONDUCTOR TRANSISTOR, METHOD OF MANUFACTURING THE SAME, A...
- Publication number 20250072055
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Kwanghee LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250063771
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250062121
- Publication date Feb 20, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Toshinari SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250063762
- Publication date Feb 20, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC/OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250063766
- Publication date Feb 20, 2025
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Wen-Hsin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME
- Publication number 20250063778
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20250056851
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jen-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURES AND IMPURITY REGIONS
- Publication number 20250048697
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Junghyun OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040227
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin Film Transistor Array Substrate and Display Device
- Publication number 20250040194
- Publication date Jan 30, 2025
- LG Display Co., Ltd.
- ChanYong Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...
- Publication number 20250031360
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAYS OF DOUBLE-SIDED DRAM CELLS INCLUDING CAPACITORS ON THE FRONT...
- Publication number 20250031362
- Publication date Jan 23, 2025
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Display Device and Method for Manufacturing the Same
- Publication number 20250022960
- Publication date Jan 16, 2025
- LG Display Co., Ltd.
- SoYoung NOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250022944
- Publication date Jan 16, 2025
- Samsung Electronics Co., LTD
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE VIA
- Publication number 20250022961
- Publication date Jan 16, 2025
- ZINITE CORPORATION
- Douglas W. BARLAGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...
- Publication number 20250022931
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH IMPROVED THERMAL STABILITY
- Publication number 20250022934
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Display Device and Method for Manufacturing the Same
- Publication number 20250015190
- Publication date Jan 9, 2025
- LG Display Co., Ltd.
- SoYoung NOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE,...
- Publication number 20250015197
- Publication date Jan 9, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGED SEMICONDUCTOR DEVICES INCLUDING BACKSIDE POWER RAILS AND M...
- Publication number 20250006705
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006844
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Jeeeun YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICES COMPRISING VERTICAL TRANSISTORS INCLUDING A CHANNEL REGION...
- Publication number 20240429104
- Publication date Dec 26, 2024
- Micron Technology, Inc.
- Kevin J. Torek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONALLY-MODULATED CAPPING LAYER FOR A TRANSISTOR AND METHOD...
- Publication number 20240413247
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...
- Publication number 20240413248
- Publication date Dec 12, 2024
- SAMSUNG DISPLAY CO., LTD.
- Yong Su LEE
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the drain or the source properties

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

3D selective material transformation to integrate 2D material elements

Transistor and display device

Gate isolation for multigate device

Asymmetric source/drain for backside source contact

Thin film transistor with silicon nanowire channel, display substra...

Thin film structure, semiconductor device including the same, and s...

Semiconductor nanostructures device structure with backside contact

Semiconductor device and method for fabricating the same

Semiconductor devices and methods for fabricating the same

Semiconductor devices and methods of manufacturing the same

Integrated transistors having gate material passing through a pilla...

Transistor devices with multi-layer interlayer dielectric structures

Semiconductor device

Inner spacer structures for gate-all-around field effect transistors

Semiconductor structure and method for forming the same

Methods of forming of inner spacer structure using semiconductor ma...

Semiconductor device

Oxide semiconductor thin-film transistor and method of manufacturin...

Ternary inverter and method of manufacturing the same

Stacked planar field effect transistors with 2D material channels

Semiconductor device, method of manufacturing the same and electron...

Semiconductor devices having parasitic channel structures

Self-aligned backside contact integration for transistors

Semiconductor device structure and method for forming the same

Method to form selective high-k deposition on 2D materials

Source/drain feature for multigate device performance and method of...

Graphene wrap-around contact

Integrated circuit devices including a common gate electrode and me...

Epitaxial source/drain recess formation with metal-comprising maski...

Methods for forming source/drain features

Patents Applicationslast 30 patents

OXIDE SEMICONDUCTOR TRANSISTOR, METHOD OF MANUFACTURING THE SAME, A...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

ELECTRONIC/OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FORMING THE SAME

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURES AND IMPURITY REGIONS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Thin Film Transistor Array Substrate and Display Device

SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...

ARRAYS OF DOUBLE-SIDED DRAM CELLS INCLUDING CAPACITORS ON THE FRONT...

Display Device and Method for Manufacturing the Same

SEMICONDUCTOR DEVICES

ACTIVE VIA

Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...

TRANSISTORS WITH IMPROVED THERMAL STABILITY

Display Device and Method for Manufacturing the Same

METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE,...

PACKAGED SEMICONDUCTOR DEVICES INCLUDING BACKSIDE POWER RAILS AND M...

SEMICONDUCTOR DEVICE

USER MODEL-BASED DATA LOSS PREVENTION

DEVICES COMPRISING VERTICAL TRANSISTORS INCLUDING A CHANNEL REGION...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

COMPOSITIONALLY-MODULATED CAPPING LAYER FOR A TRANSISTOR AND METHOD...

THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...