Claims
- 1. A field-effect transistor comprising a silicon substrate having a source region and a drain region, and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between said silicon substrate and said gate electrode.
- 2. A transistor according to claim 1, wherein said thin organic film consists of a stacking structure of a first thin film including donor molecules and a second thin film including acceptor molecules.
- 3. A transistor according to claim 1, wherein said thin organic film consists of a single thin film including both of the donor and acceptor molecules.
- 4. A transistor according to claim 1, wherein said thin organic film consists of a super lattice structure obtained by stacking repeatedly a plurality of stacking structures of the first thin film including donor molecules and the second thin film including acceptor molecules.
- 5. A transistor according to claim 1, wherein said thin organic film consists of a stacking structure of a first thin film including a plurality of types of donor molecules and a second thin film including a plurality of types of acceptor molecules.
- 6. A transistor according to claim 1, wherein said thin organic film consists of a structure obtained by sequentially stacking a first thin film including donor molecules, a second thin film including acceptor molecules, and a third thin film including other acceptor molecules having an electronic affinity larger than that of said acceptor molecules.
- 7. A transistor according to claim 1, wherein said thin organic film consists of a structure obtained by sequentially stacking a first thin film including donor molecules, a second thin film including acceptor molecules, and a third thin film interposed between the first and second thin films and including other donor molecules having an ionization potential larger than that of said donor molecules.
- 8. A transistor according to claim 1, wherein a thin film including insulating organic molecules is formed on at least one of the surfaces of said thin organic film.
- 9. A transistor according to claim 1, wherein said thin organic film is formed on said silicon substrate through an inorganic insulating film.
- 10. A transistor according to claim 8, wherein said thin organic film is formed directly on said silicon substrate.
- 11. A transistor according to claim 1, wherein said thin organic film consists of a structure obtained by stacking a first thin film including donor molecules, a second thin film including acceptor molecules, and a third thin film interposed between the first and second thin films and including insulating molecules.
- 12. A transistor according to claim 1, wherein said thin organic film includes organic molecules having a donor radical and an acceptor radical.
- 13. A transistor according to claim 1, wherein said thin organic film is formed by the Langmuir-Blodgett process.
Priority Claims (1)
Number |
Date |
Country |
Kind |
61-66278 |
Mar 1986 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 07/518,236, filed on May 7, 1990, now abandoned which is a continuation of application Ser. No. 07/318,485 filed on Mar. 3, 1989, now abandoned, which is a continuation of application Ser. No. 07/029,968, filed Mar. 25, 1987, now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4688078 |
Hseih |
Dec 1985 |
|
Foreign Referenced Citations (4)
Number |
Date |
Country |
0165111 |
Dec 1985 |
EPX |
0185941 |
Jul 1986 |
EPX |
2637206 |
Mar 1977 |
DEX |
61-37862 |
Feb 1986 |
JPX |
Non-Patent Literature Citations (4)
Entry |
Kuhn, M., "A Quasi-Static Technique For MOS C-V and Surface State Measurements," Solid-State Electronics, vol. 13, No. 6, 1970, pp. 873-885. |
Thin Solid Films, vol. 132, No. 1/4, Oct. 1985, pp. 33-39, C. D. Fung et al., "Planar silicon field-effect transistors with Langmuir-Blodgett gate insulators". |
Applied Physics Letters, vol. 49, No. 18, Nov. 3, 1986, pp. 1210-1212, A. Tsumura et al. "Macromolecular electronic device: Field-effect transistor with a polythiophene thin film". |
Thin Solid Films vol. 134 pp. 195-199; A. Barraud et al; Dec. 1985. |
Continuations (3)
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Number |
Date |
Country |
Parent |
518236 |
May 1990 |
|
Parent |
318485 |
Mar 1989 |
|
Parent |
29968 |
Mar 1987 |
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