the variation being perpendicular to the channel plane

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/513the variation being perpendicular to the channel plane

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Patents Grantslast 30 patents

Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,206,008
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the semicon...
- Patent number 12,199,166
- Issue date Jan 14, 2025
- SK hynix Inc.
- Nam Jae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced flicker noise
- Patent number 12,191,374
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device and method for manufacturing the same
- Patent number 12,191,150
- Issue date Jan 7, 2025
- Denso Corporation
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having vertically-spaced channel material seg...
- Patent number 12,185,544
- Issue date Dec 31, 2024
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device having floating gate with protruding str...
- Patent number 12,185,532
- Issue date Dec 31, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cool electron erasing in thin-film storage transistors
- Patent number 12,183,834
- Issue date Dec 31, 2024
- SUNRISE MEMORY CORPORATION
- Sayeef Salahuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric structure including a ferroelectric film having a fir...
- Patent number 12,176,413
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Sanghyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors and arrays of elevationally-extending strings of memory...
- Patent number 12,170,324
- Issue date Dec 17, 2024
- Ramanathan Gandhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 12,166,100
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,154,969
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gates with layers for transistor threshold voltage tuning and...
- Patent number 12,154,964
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- An-Hung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device having capacitor material
- Patent number 12,148,811
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing metal gate overhang by forming a top-wide bottom-narrow du...
- Patent number 12,142,664
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih Wei Bih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-deposition treatment for FET technology and devices formed thereby
- Patent number 12,142,531
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Peripheral circuitry under array memory device and method of fabric...
- Patent number 12,137,566
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage three-dimensional devices having dielectric liners
- Patent number 12,136,628
- Issue date Nov 5, 2024
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with reduced defect and methods of forming same
- Patent number 12,125,892
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of manufacture
- Patent number 12,119,266
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,113,116
- Issue date Oct 8, 2024
- Hsien-Wen Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING...
- Publication number 20250014896
- Publication date Jan 9, 2025
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...
- Publication number 20240429232
- Publication date Dec 26, 2024
- STMicroelectronics International N.V.
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES
- Publication number 20240421209
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420967
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240413222
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZATION TEMPERATURE REDUCTION OF HIGH-K DIELECTRIC LAYER
- Publication number 20240405093
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shen-Yang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIPHERAL CIRCUITRY UNDER ARRAY MEMORY DEVICE AND METHOD OF FABRIC...
- Publication number 20240397724
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chih LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...
- Publication number 20240387687
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATES AND METHODS OF FORMING THE SAME
- Publication number 20240387682
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- An-Hung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387684
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Wen WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED CAPACITORS
- Publication number 20240387683
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20240379811
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-END GATE STRUCTURES AND METHOD FORMING SAME
- Publication number 20240379821
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE
- Publication number 20240371973
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME
- Publication number 20240371964
- Publication date Nov 7, 2024
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20240363442
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURI...
- Publication number 20240365549
- Publication date Oct 31, 2024
- KIOXIA Corporation
- Yoshiaki FUKUZUMI
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR SEMICONDUCTOR DEVICES
- Publication number 20240363723
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, FERROELECTRIC CAPACITOR AND LAMINATED STRUCTURE
- Publication number 20240339519
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YING-CHIH CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240332421
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING...
- Publication number 20240332382
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Hsiang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240322034
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Keita AOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240321998
- Publication date Sep 26, 2024
- E Ink Holdings Inc.
- Ming-Kai Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRI...
- Publication number 20240313040
- Publication date Sep 19, 2024
- SK HYNIX INC.
- Se Hun KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240304447
- Publication date Sep 12, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20240304449
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Structures and Methods of Forming the Same
- Publication number 20240304725
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240284674
- Publication date Aug 22, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS

the variation being perpendicular to the channel plane

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High-voltage semiconductor device structures

Semiconductor device

Semiconductor memory device and method of manufacturing the semicon...

Semiconductor device with reduced flicker noise

Switching device and method for manufacturing the same

Integrated assemblies having vertically-spaced channel material seg...

Method of forming a semiconductor device by driving hydrogen into a...

Structure of memory device having floating gate with protruding str...

Cool electron erasing in thin-film storage transistors

Ferroelectric structure including a ferroelectric film having a fir...

Method of manufacturing gate structure and method of manufacturing...

Fin field effect transistor having conformal and non-conformal gate...

Transistors and arrays of elevationally-extending strings of memory...

Method of manufacturing semiconductor device and associated memory...

Nanosheet device with dipole dielectric layer and methods of formin...

Semiconductor device structure with metal gate stack

Metal gates with layers for transistor threshold voltage tuning and...

Method of fabricating a semiconductor device having capacitor material

Reducing metal gate overhang by forming a top-wide bottom-narrow du...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Pre-deposition treatment for FET technology and devices formed thereby

Peripheral circuitry under array memory device and method of fabric...

Integrated circuit with doped low-k sidewall spacers for gate stacks

High voltage three-dimensional devices having dielectric liners

Methods for forming recesses in source/drain regions and devices fo...

Transistors with reduced defect and methods of forming same

Semiconductor arrangement and method of manufacture

Semiconductor device and manufacturing method thereof

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Strained gate semiconductor device having an interlayer dielectric...

Patents Applicationslast 30 patents

METHOD FOR MAKING MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING...

INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT, AND CORRESPONDIN...

SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CRYSTALLIZATION TEMPERATURE REDUCTION OF HIGH-K DIELECTRIC LAYER

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

PERIPHERAL CIRCUITRY UNDER ARRAY MEMORY DEVICE AND METHOD OF FABRIC...

NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...

METAL GATES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES WITH IMPROVED CAPACITORS

INTEGRATED CIRCUIT METAL GATE STRUCTURE

FIN-END GATE STRUCTURES AND METHOD FORMING SAME

ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE

TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURI...

MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE, FERROELECTRIC CAPACITOR AND LAMINATED STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE

CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRI...

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

FinFET Structures and Methods of Forming the Same

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE