Patent Grant
11935720
The present invention generally relates to a field-emission type electron source and charged particle beam devices using the electron source. More particularly, the present invention relates to a thermal field emission cathode which is employed as an electron source in an electron microscope, a semiconductor electron microscope equipment, a critical dimension examine tool, an electron beam tester, an Auger electron spectrometer, an electron beam lithography apparatus, or other electron beam related systems.
An electron source or electron gun (also called electron emitter) is an electrical component in some vacuum tubes that produces a narrow, collimated electron beam that has a precise kinetic energy. Its largest application is in cathode-ray tubes (CRTs), used in nearly all television sets, computer displays and oscilloscopes that are not flat-panel displays. They are also used in field-emission displays (FEDs), which are essentially flat-panel displays made of rows of extremely small cathode-ray tubes. They are also used in microwave linear beam vacuum tubes such as klystrons, inductive output tubes, travelling wave tubes, and gyrotrons, as well as in scientific instruments such as electron microscopes and particle accelerators. Electron guns may be classified by the type of electric field generation (DC or RF), by emission mechanism (thermionic, photocathode, cold emission, plasmas source), by focusing (pure electrostatic or with magnetic fields), or by the number of electrodes.
Thermal field emission cathodes may be used in devices such as scanning electron microscopes, transmission electron microscopes, semiconductor inspection systems, and electron beam lithography systems as an electron source. In such devices, an electron source provides electrons, which are then guided into an intense, finely focused beam of electrons having energies within a narrow range. To facilitate formation of such a beam, the electron source should emit a large number of electrons within a narrow energy band. The electrons should be emitted from a small surface area on the source into a narrow cone of emission. Electron sources can be characterized by brightness, which is defined as the electron current divided by the real or virtual product of the emission area and the solid angle through which the electrons are emitted.
Electrons are normally prevented from leaving the atoms at the surface of an object by an energy barrier. The amount of energy required to overcome the energy barrier is known as work function of the surface. A thermionic emission electron source relies primarily on heat to provide the energy to overcome the energy barrier and emit electrons. However, thermionic emission sources are not sufficiently bright for use in many applications.
Another type of electron source is a cold field emission source that operates at room temperature and relies on a strong electric field to facilitate the emission of electrons by tunneling through the energy barrier. A field electron source typically includes a narrow tip at which electrons leaves the surface and are ejected into surrounding vacuum. While cold field emission sources are much smaller and brighter than thermionic emission sources, cold field emission sources exhibit instabilities that cause problems in many applications.
Yet another type of electron source is referred to as a Schottky emission cathode or Schottky emitter. Schottky emitters use a coating on a heated emitter tip to reduce its work function. The coating typically comprises a very thin layer, such as a fraction of a monolayer, of an active metal. In Schottky emission mode, Schottky emitter uses a combination of heat and electric field to emit electrons, which appear to radiate from a virtual point source within the tip. With changes to the emitter temperature and electric field, the Schottky emitter will emit in other emission modes or combinations of emission modes. Schottky emitters are very bright and are more stable and easier to handle than cold field emitters. Because of their performance and reliability benefits, Schottky emitters have become a common electron source for modern electron beam systems.
At the high temperatures when Schottky emitter 12 operates, the coating material tends to evaporate from emitter 16 and must be continually replenished to maintain the low work function at apex 22. A reservoir 28 of the coating material is typically provided to replenish the coating on emitter 16. The material from reservoir 28 diffuses along the surface and through the bulk of emitter 16 toward apex 22, thereby continually replenishing the coating on the apex 22. At the Schottky emitter 12 operating temperature, not only the coating material on the emitter 16 and apex 22 evaporate, but the coating material also evaporates directly from the reservoir 28, thus depleting it. The evaporation rate of the coating material in the reservoir increases exponentially with the temperature. Thus, the useful life of the reservoir depends upon the amount of material in the reservoir and its temperature.
When reservoir 28 is depleted, Schottky emitter 12 no longer functions properly, and it is necessary to shut down the electron beam system to replace the emitter 16 or the whole Schottky emitter unit 12. This process is time consuming and is costly. It is desirable, therefore, to extend the life of the reservoir 28 as much as possible, thereby extending the life of the emitter 16.
Known electron sources using the coating material such as ZrO are unsatisfactory because of the following drawbacks: (1) diffusion of the ZrO to the apex does not easily happen; (2) the diffusion distance of ZrO is too long; (3) formation of chips or cracks on the ZrO; (4) too much loss of ZrO; (5) the practical life of the electron source is not sufficiently long; (6) higher temperature within the electron source; (7) bigger apex size under high temperature within the electron source; (8) lower resolution; and (9) lower angular intensity.
On the other hand, the emitter 16 is placed in a vacuum environment that does not have a proper amount of oxygen. For example, electron sources using too little oxygen are unsatisfactory because of the following drawbacks: (1) oxygen cannot effectively facilitate the ZrO diffusion for thermal field-emission type electron sources; (2) oxygen cleaning of the tip of LaB6 crystal rod and the CeB6 crystal rod is not effective; (3) oxygen cleaning of the tungsten rod for cold field-emission type electron source is not effective either; (4) higher temperature is demanded within the electron source; (5) bigger apex size under the higher temperature within the electron source; (7) lower resolution; and (7) lower angular intensity.
Therefore, there exists a need to overcome the above problems. Advantageously, the present invention provides solutions for resolving these problems.
One aspect of the present invention provides a field-emission type electron source comprising (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body and (ii) a mass of ZrO on a portion of the surface, or the entire surface, of the sharpened terminus. In the field-emission type electron source, (1) the rod body immediately adjacent to the terminus has a diameter Db, (2) the terminus has a length Lt along an elongation direction of the tungsten rod; and (3) the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased non-linearly along the length Lt (or axially) from a value that is slightly smaller than Db to a minimal value Dt0 at the apex of the terminus.
Another aspect of the invention provides a field-emission type electron source comprising (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus. The rod body immediately adjacent to the terminus has a diameter Db, and the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased to a minimal value Dt0 at the apex of the terminus. No ZrO is formed on the single-crystal tungsten rod except the sharpened terminus.
Still another aspect of the invention provides a field-emission type electron source comprising a crystal rod placed in a gaseous medium. The crystal rod may be a single-crystal tungsten rod, a lanthanum hexaboride LaB6 crystal tip (or rod), or a cerium hexaboride CeB6 crystal tip (or rod). The gaseous medium consists of oxygen and a non-oxygen gas, and a molar ratio between oxygen and the non-oxygen gas is greater than 1:1, 10:1, 50:1, or 100:1.
A further aspect of the invention provides a charged particle beam device comprising a field-emission type electron source characterized by the following (A), (B) or (C):
(A) The field-emission type electron source comprises (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, wherein (1) the rod body immediately adjacent to the terminus has a diameter Db, (2) the terminus has a length Lt along an elongation direction of the tungsten rod; and (3) the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased non-linearly along the length Lt (or axially) from a value that is slightly smaller than Db to a minimal value Dt0 at the apex of the terminus; and (ii) a mass of ZrO on a portion of the surface, or the entire surface, of the sharpened terminus.
(B) The field-emission type electron source comprises (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, wherein the rod body immediately adjacent to the terminus has a diameter Db, and the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased to a minimal value Dt0 at the apex of the terminus; and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus; wherein no ZrO is formed on the single-crystal tungsten rod except the sharpened terminus.
(C) The field-emission type electron source comprises a crystal rod placed in a gaseous medium, wherein the crystal rod is a single-crystal tungsten rod, a LaB6 crystal rod, or a CeB6 crystal rod; wherein the gaseous medium consists of oxygen and a non-oxygen gas, and wherein a molar ratio between oxygen and the non-oxygen gas is greater than 1:1, 10:1, 50:1, or 100:1.
The above features and advantages and other features and advantages of the present invention are readily apparent from the following detailed description of the best modes for carrying out the invention when taken in connection with the accompanying drawings.
The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements. All the figures are schematic and generally only show parts which are necessary in order to elucidate the invention. For simplicity and clarity of illustration, elements shown in the figures and discussed below have not necessarily been drawn to scale. Well-known structures and devices are shown in simplified form, omitted, or merely suggested, in order to avoid unnecessarily obscuring the present invention.
In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It is apparent, however, to one skilled in the art that the present invention may be practiced without these specific details or with an equivalent arrangement.
Where a numerical range is disclosed herein, unless otherwise specified, such range is continuous, inclusive of both the minimum and maximum values of the range as well as every value between such minimum and maximum values. Still further, where a range refers to integers, only the integers from the minimum value to and including the maximum value of such range are included. In addition, where multiple ranges are provided to describe a feature or characteristic, such ranges can be combined.
It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the invention. For example, when an element is referred to as being “on”, “connected to”, or “coupled to” another element, it can be directly on, connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly on”, “directly connected to”, or “directly coupled to” another element, there are no intervening elements present.
Throughout the specification and claims, the following terms take the meanings explicitly associated herein, unless the context clearly dictates otherwise. The phrase “in one embodiment” does not necessarily refer to the same embodiment, although it may. Furthermore, the phrase “in another embodiment” does not necessarily refer to a different embodiment, although it may. Thus, as described below, various embodiments of the invention may be readily combined without departing from the scope or spirit of the invention.
In addition, as used herein, the term “or” is an inclusive “or” operator, and is equivalent to the term “and/or,” unless the context clearly dictates otherwise. The term “based on” is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. In addition, throughout the specification, the meaning of “a,” “an,” and “the” include plural references. The meaning of “in” includes “in” and “on.”
Referring again to
The conventional Schottky emitter 12 in
We have solved these problems. With reference to
With reference to
Any known methods may be employed to form ZrO 06 on a portion of the surface, or the entire surface, of the sharpened terminus 04. For example, a slurry-like gel where zirconia or zirconium fine particles or zirconium hydride is mixed in an organic solvent or the like is adhered to the sharpened terminus 04, using a tool like an ink brush, a dropper, or a syringe, and then is heated in a vacuum state and sintered. In the case of zirconium or zirconium hydride, the process of performing oxidization by, for example, heating in oxygen gas is added thereafter.
After being coated, ZrO 06 may be supplied onto a tungsten crystal plane such as plane (100) on apex 05 by diffusion (such as thermal diffusion) to form a region with a low work function. By applying a strong electric field, thermoelectrons that surpass a potential barrier and electrons transmitted by the tunnel effect can be extracted.
Referring to
In preferred embodiments as shown in
The profile of “linearly tapered terminus” may be obtained or sharpened by AC electrolytic polishing. In contrast, the profile of “non-linearly tapered terminus” as shown in
Electrolytic polishing is a technique of soaking a thin wire into electrolyte solution, followed by application of voltage, thus fabricating a sharpened tip end or terminus 04. The terminus 04 may have different shapes between DC voltage and AC voltage applied (hereinafter polishing by DC voltage is called DC electrolytic polishing and polishing by AC voltage is called AC electrolytic polishing). When a tungsten monocrystal thin wire having axial orientation of <100> polished, the resultant tip end has a different angle at a conical part (cone angle) between the DC electrolytic polishing and the AC electrolytic polishing. When the tip end is sharpened by DC electrolytic polishing, the tip end is polished like a curve, and the cone angle alpha is 10 degree or less. On the other hand, when the tip end is sharpened by AC electrolytic polishing, the cone angle of the tip can be made large of 15 degree or more. When a tip having the cone angle of 10 degree or less is used as an electron source, deformation of the tip end due to atoms moving at the surface is less, meaning good stability of the emission current. When the cone angle is small, electric field generated around the tip is easily concentrated on the tip when voltage is applied to the tip. That is, this has advantages that a power supply of small capacity is enough to emit a certain amount of current. For more details related to DC and AC electrolytic polishings, please see US Published Application 2015/0255240A1, which is incorporated herein by reference.
As shown in
Various embodiments of the invention provide a field-emission type electron source 01 as shown in
As shown in
In preferred embodiments, the diameter Dt at any position of the terminus 04 is smaller than the would-be Dt at the same position if the terminus's diameter Dt is decreased linearly along the length Lt from a value that is slightly smaller than Db to a minimal value Dt0 at the apex of the terminus. Such a terminus may be sharpened by W(100) or W(310) DC electrolytic polishing, and the electron source is configured for thermal field emission.
In other embodiments, the terminus 04 may have a length Lt along an elongation direction of the tungsten rod 02; and the diameter Dt is decreased linearly along the length Lt from a value that is slightly smaller than Db to a minimal value Dt0 at the apex 05 of the terminus 04. Such a terminus may be sharpened by AC electrolytic polishing.
In preferred embodiments as shown in
In various embodiments, Db may be in the range of from 0.1 mm to 0.2 mm. Dt0 may be in the range of from 4 nm (DC electrolytic polishing) to 300 nm (AC electrolytic polishing). The terminus 04 may have a length Lt along an elongation direction of the tungsten rod 02 and Lt may be in the range of from 0.15 mm to 0.2 mm.
Referring to
Hexaborides such as lanthanum hexaboride (LaB6) and cerium hexaboride (CeB6) are refractory ceramic materials with low work functions, around 2.5 eV. They are also somewhat resistant to cathode poisoning. As such, the principal use of these hexaborides is in hot cathodes, either as a single crystal or as a coating deposited by physical vapor deposition. Cerium hexaboride cathodes have a lower evaporation rate at 1700 K than lanthanum hexaboride, but they become equal at temperatures above 1850 K. Cerium hexaboride cathodes have one and half the lifetime of lanthanum hexaboride, due to the former's higher resistance to carbon contamination. Hexaboride cathodes are about ten times “brighter” than tungsten cathodes, and they have 10-15 times longer lifetime. CeB6 has proven to be more resistant to the negative impact of carbon contamination than LaB6.
Examples of the non-oxygen gas in the gaseous medium include, but are not limited to, H2, N2, CO, or any mixture thereof. The gaseous medium may maintain a pressure of from about 10−11 torr to 10−8 torr within the electron source 01. In some embodiments as shown in
As shown in
The crystal rod may be selected from a single-crystal tungsten rod with a W(110) tip facet (or apex facet) in the sharpened terminus, a single-crystal tungsten rod with a W(310) tip facet (or apex facet) in the sharpened terminus, a LaB6 crystal rod, and a CeB6 crystal rod; and the electron source is configured for cold field emission.
As shown in
Referring again to
As previously described, the mass of ZrO 06 may be formed on the surface of a segment S1 of the sharpened terminus 04 immediately adjacent to the rod body 03. The segment S1 may have a length of (30˜80)%×Lt along the elongation direction of the tungsten rod 02. Db is in the range of from 0.1 mm to 0.2 mm. Dt0 is in the range of from 4 nm (DC electrolytic polishing) to 300 nm (AC electrolytic polishing). The terminus 04 may have a length Lt along an elongation direction of the tungsten rod and Lt is in the range of from 0.15 mm to 0.2 mm.
As shown in
In (B), the field-emission type electron source comprises (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, wherein the rod body immediately adjacent to the terminus has a diameter Db, and the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased to a minimal value Dt0 at the apex of the terminus; and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus; wherein no ZrO is formed on the single-crystal tungsten rod except the sharpened terminus.
In (C), the field-emission type electron source comprises a crystal rod placed in a gaseous medium, wherein the crystal rod is a single-crystal tungsten rod, a LaB6 crystal rod, or a CeB6 crystal rod; wherein the gaseous medium consists of oxygen and a non-oxygen gas, and wherein a molar ratio between oxygen and the non-oxygen gas is greater than 1:1, 10:1, 50:1, or 100:1.
In some embodiments, the charged particle beam device 10 may include two of the field-emission type electron sources such as (A+B). Specifically, the field-emission type electron source comprises (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, wherein (1) the rod body immediately adjacent to the terminus has a diameter Db, (2) the terminus has a length Lt along an elongation direction of the tungsten rod; and (3) the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased non-linearly along the length Lt from a value that is slightly smaller than Db to a minimal value Dt0 at the apex of the terminus; and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus; wherein no ZrO is formed on the single-crystal tungsten rod except the sharpened terminus.
In some embodiments, the charged particle beam device 10 may include two of the field-emission type electron sources such as (A+C). Specifically, the field-emission type electron source comprises (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, wherein (1) the rod body immediately adjacent to the terminus has a diameter Db, (2) the terminus has a length Lt along an elongation direction of the tungsten rod; and (3) the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased non-linearly along the length Lt from a value that is slightly smaller than Db to a minimal value Dt0 at the apex of the terminus; and (ii) a mass of ZrO on a portion of the surface, or the entire surface, of the sharpened terminus; wherein the single-crystal tungsten rod is placed in a gaseous medium; and wherein the gaseous medium consists of oxygen and a non-oxygen gas, and wherein a molar ratio between oxygen and the non-oxygen gas is greater than 1:1, 10:1, 50:1, or 100:1.
In some embodiments, the charged particle beam device 10 may include two of the field-emission type electron sources such as (B+C). Specifically, the field-emission type electron source comprises (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, wherein the rod body immediately adjacent to the terminus has a diameter Db, and the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased to a minimal value Dt0 at the apex of the terminus; and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus; wherein no ZrO is formed on the single-crystal tungsten rod except the sharpened terminus; wherein the single-crystal tungsten rod is placed in a gaseous medium; and wherein the gaseous medium consists of oxygen and a non-oxygen gas, and wherein a molar ratio between oxygen and the non-oxygen gas is greater than 1:1, 10:1, 50:1, or 100:1.
In some embodiments, the charged particle beam device 10 may include all the three field-emission type electron sources as described above (A+B+C). Specifically, the field-emission type electron source comprises (i) a single-crystal tungsten rod having a sharpened terminus extending from a rod body, wherein (1) the rod body immediately adjacent to the terminus has a diameter Db, (2) the terminus has a length Lt along an elongation direction of the tungsten rod; and (3) the terminus is so sharpened that its diameter Dt (Dt<Db) is decreased non-linearly along the length Lt from a value that is slightly smaller than Db to a minimal value Dt0 at the apex of the terminus; and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus; wherein no ZrO is formed on the single-crystal tungsten rod except the sharpened terminus; wherein the single-crystal tungsten rod is placed in a gaseous medium; and wherein the gaseous medium consists of oxygen and a non-oxygen gas, and wherein a molar ratio between oxygen and the non-oxygen gas is greater than 1:1, 10:1, 50:1, or 100:1.
For the charged particle beam device 10, effects of said ZrO include one or more of the following: (1) making the ZrO diffusion to the apex more easily to happen; (2) shorter diffusion distance for ZrO; (3) preventing or alleviating the formation of chips or cracks on the ZrO; (4) less loss of ZrO; (5) extending the practical life of the thermal field-emission type electron source; (6) lower temperature within the thermal field-emission type electron source; (7) smaller apex size under lower temperature within the electron source; (8) higher resolution; and (9) higher angular intensity, for example greater than 50%, 100%, 150% or even 200% improvement of angular intensity (e.g. from 1 mA/sr to 3 mA/sr). Effects of said oxygen in the gaseous medium (if any) include one or more of the following: (1) facilitating the ZrO diffusion for thermal field-emission type electron source; (2) cleaning containments caused by H2 and CO on the tip of LaB6 crystal rod and the CeB6 crystal rod for cold field-emission type electron source; (3) cleaning containments caused by H2 and CO on the tip of the tungsten rod (110) and (310) for cold field-emission type electron source; (4) lower temperature within the electron source for thermal field-emission type electron source; (5) smaller apex size under lower temperature within the electron source field-emission type electron source; (6) higher resolution; and (7) higher angular intensity, for example greater than 50%, 100%, 150% or even 200% improvement of angular intensity (e.g. from 1 mA/sr to 3 mA/sr).
Examples of the charged particle beam device 10 include, but are not limited to, an electron microscope, a semiconductor electron microscope equipment, a critical dimension examine tool, an electron beam tester, an Auger electron spectrometer, an electron beam lithography apparatus, or other electron beam related systems.
As shown in
In the foregoing specification, embodiments of the present invention have been described with reference to numerous specific details that may vary from implementation to implementation. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense. The sole and exclusive indicator of the scope of the invention, and what is intended by the applicant to be the scope of the invention, is the literal and equivalent scope of the set of claims that issue from this application, in the specific form in which such claims issue, including any subsequent correction.
| Number | Name | Date | Kind |
|---|---|---|---|
| 20200088018 | Legg | Mar 2020 | A1 |
| Number | Date | Country |
|---|---|---|
| 101752160 | Jun 2010 | CN |
| 2010272504 | Dec 2010 | JP |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 18157817 | Jan 2023 | US |
| Child | 18491725 | US |
