Claims
- 1. A system, comprising:an ionizing device, comprising a substrate having at least one opening, a first conductive electrode extending on a first surface of the substrate and a second conductive electrode extending on a second surface of the substrate, and a separator insulating element, having a thickness less than 1 micron, separating said first and second conductive electrodes at said at least one opening, said first and second conductive electrodes being separated by a width of said separator insulating element.
- 2. A system as in claim 1, wherein said first and second conductive electrodes are separated by less than 300 nm at said at least one opening.
- 3. A system as in claim 1, wherein said separator insulating element is a dielectric.
- 4. A system as in claim 3, wherein said separator insulating clement is formed of silicon nitride or alumina.
- 5. A system as in claim 1, wherein said first and second electrodes are formed of one of gold, chrome or titanium.
- 6. A system as in claim 1, further comprising an element which receives ions from said ionizing device.
- 7. A system as in claim 1, wherein there are a plurality of thin portions, and said thin portions are each formed from first and second conductive electrodes which arc separated by said less than 1 micron.
- 8. A system as in claim 1, wherein said first and second conductive electrodes are separated by less than a mean free path of a gas being analyzed.
- 9. A system as in claim 1, wherein said first and second conductive electrodes are separated by less than 200 nm at said at least one opening.
- 10. A system as in claim 1 wherein said first and second conductive electrodes are separated by approximately 50 nm at said at least one opening.
- 11. A system as in claim 1 wherein said at least one opening tapers inwardly from the first surface of the substrate to the second surface of the substrate.
- 12. A system as in claim 1 wherein said at least one opening has a diameter approximately in the range of 2-3 microns.
- 13. An ionizing membrane, comprising:a thick supporting portion with at least one opening formed in the thick supporting portion; an insulating clement coated on a surface of the thick supporting portion configured to form a hole within each at least one opening in the thick supporting portion; and first and second metal electrodes coated on surfaces of the thick supporting portion extending into the openings in the thick supporting portion, where the insulating element separates the first and second metal electrodes within the holes of the insulating element by a distance less than the mean free path of a material being ionized.
- 14. A system as in claim 13, wherein said insulating element separates said first and second conductive electrodes by less than 1 micron in the holes.
- 15. A system as in claim 13, wherein said insulating element separates said first and second conductive electrodes by less than 300 nm in the holes.
- 16. A system as in claim 13, wherein said insulating element separates said first and second conductive electrodes by less than 200 nm in the holes.
- 17. A system as in claim 13, wherein said insulating element separates said first and second conductive electrodes by less than 50 nm in the holes.
- 18. A method as in claim 13, wherein said insulating clement comprises a dielectric.
- 19. A system as in claim 13, wherein said insulator element is formed of silicon or alumina.
- 20. A system as in claim 13, wherein said first and second electrodes are formed of one of gold, chrome or titanium.
- 21. A system as in claim 13, further comprising an element which receives ions from said ionizing device.
- 22. A method of forming an ionization membrane, comprising:forming a layer of thin dielectric material on a substrate that has a first specified thickness of a sufficient thickness to maintain structural integrity; forming a first electrode on the first surface of said thin dielectric material, said first electrode being formed of a metal material; back etching at least one hole in said substrate; forming a second electrode on a second surface of the substrate including the at least one back etching holes, such that at least a portion of the second electrode is on a second surface of the thin dielectric material; and forming holes in the second electrode, thin dielectric material and the first electrode, which holes have side surfaces where the first and second electrodes are separated by a width of the thin dielectric material.
- 23. A method as in claim 22, wherein said thin dielectric material has a thickness which is less than the mean free path of the gas intended to be ionized by the ionization membrane.
- 24. A method as in claim 22, wherein said forming electrodes comprises depositing gold, chrome, or titanium.
- 25. A method as in claim 22, wherein said forming a thin dielectric comprises depositing silicon nitride or alumina.
- 26. A method as in claim 22, wherein said thin dielectric has a thickness less than 500 nm.
- 27. A method as in claim 22, wherein said thin dielectric has a thickness less than 300 nm.
- 28. A method as in claim 26, further comprising applying a voltage less than 15 volts between said first and second electrodes to form a field between said first and second electrodes in the range of megavolts per meter.
- 29. A method as in claim 22, wherein said thin dielectric has a thickness of approximately 50 nm.
- 30. A method as in claim 22, wherein said forming holes in the second electrode comprises ion-beam milling.
- 31. A method as in claim 22, wherein said forming a thin dielectric comprises silicon nitride or alumina.
- 32. A method as in claim 22, wherein said back etching at least one hole in said substrate forms at least one hole tapered inwardly.
- 33. A method as in claim 22, wherein the holes formed by said forming holes in the second electrode, thin dielectric material and the first electrode are approximately 2-3 microns in diameter.
- 34. A method of forming a ionizing source, comprising:forming a layer of thin dielectric material on a substrate that has a first specified thickness of a sufficient thickness to maintain structural integrity; forming a first electrode on the first surface of said thin dielectric material, said first electrode being formed of a metal material; forming at least one hole in said substrate; forming a second electrode on a second surface of the substrate including the at least one hole in said substrate, such that at least a portion of the second electrode is on a second surface of the thin dielectric material; and forming at least one hole in the second electrode, thin dielectric material and the first electrode, which at least one hole has side surfaces where the first and second electrodes are separated by a width of the thin dielectric material.
- 35. A method as in claim 34, wherein said fanning at least one hole in said substrate comprises ion-beam milling.
- 36. A method as in claim 34, wherein said forming at least one hole in the second electrode, thin dielectric material and the first electrode comprises ion-beam milling.
- 37. A method as in claim 34, wherein said thin dielectric material has a thickness which is less than the mean free path of the gas intended to be ionized by the ionizing source.
- 38. A method as in claim 34, wherein said forming electrodes comprises depositing gold, chrome or titanium.
- 39. A method as in claim 34, wherein said thin dielectric comprises silicon nitride or alumina.
- 40. A method as in claim 34, wherein said thin dielectric has a thickness less than 500 nm.
- 41. A method as in claim 34, wherein said thin dielectric has a thickness less than 300 nm.
- 42. A method as in claim 34, wherein said thin dielectric has a thickness less than 200 nm.
- 43. A method as in claim 34, wherein said thin dielectric has a thickness of approximately 50 nm.
- 44. A method as in claim 34, further comprising applying a voltage less than 15 volts between said first and second electrodes to form a field between said first and second electrodes in the range of megavolts per meter.
- 45. A method as in claim 34, wherein said forming at least one hole in said substrate forms at least one hole tapered inwardly.
- 46. A system, comprising:an ionizing device, comprising a support member having at least one opening, a first conductive electrode extending on a first surface of the support member and a second conductive electrode extending on a second surface of the support member, and separator means for separating said first and second conductive electrodes by a width of said separator means, wherein said separator means has a thickness less than the mean free path of the material being ionized.
- 47. A system as in claim 46, wherein said separator means separates said first and second conductive electrodes by less than 1 micron at said at least one opening.
- 48. A system as in claim 46, wherein said separator means separates said first and second conductive electrodes by less than 300 nm at said at least one opening.
- 49. A system as in claim 46, wherein said separator means comprises a dielectric.
- 50. A system as in claim 46, wherein said separator means is formed of silicon nitride or alumina.
- 51. A system as in claim 46, wherein said first and second electrodes are formed of one of gold, chrome or titanium.
- 52. A system as in claim 46, further comprising an element which receives ions from said ionizing device.
- 53. A system as in claim 46, wherein said separator means separates said first and second conductive electrodes by less than 200 nm at said at least one opening.
- 54. A system as in claim 46, wherein said separator means separates said first and second conductive electrodes by less than 50 nm at said at least one opening.
- 55. A system as in claim 46 wherein said at least one opening tapers inwardly from the first surface of the support member to the second surface of the support member.
- 56. A system as in claim 46 wherein said at least one opening has a diameter approximately in the range of 2-3 microns.
- 57. An ionizing membrane, comprising:a thick supporting portion with a first surface and with openings formed in the thick supporting portion; an insulating clement with first and second surfaces, wherein the insulating element is coated on the first surface of the thick supporting portion and terminates at a first end within the openings to form holes; a first electrodes coated on die first surface of the insulating element that approximately terminates at the first end of said insulating element; a second electrode coated on the second surface of the insulating element that approximately terminates at die first end of said insulating element; and wherein a distance between the first and second metal electrodes within the holes is less than the mean free path of a material being ionized.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims benefit of U.S. Provisional Application No. 60/301,092, filed Jun. 25, 2001, U.S. Provisional Application No. 60/336,841 filed on Oct. 31, 2001, and U.S. Provisional Application No. 60/347,685 filed on Jan. 8, 2002, all of which are hereby fully incorporated by reference.
Government Interests
This invention was made in part with Government support under contract NASA-1407 awarded by NASA. The Government has certain rights in this invention.
US Referenced Citations (31)
Provisional Applications (3)
|
Number |
Date |
Country |
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60/301092 |
Jun 2001 |
US |
|
60/336841 |
Oct 2001 |
US |
|
60/347685 |
Jan 2002 |
US |