This application claims priority from Japanese Patent Application No. 2018-22258 filed on Feb. 9, 2018, which are hereby incorporated herein by reference in its entirety.
The invention relates to a film forming apparatus for forming a film on a substrate via vapor phase growth, and particularly, to the improvement in a rotation driving mechanism for rotating and revolving substrates.
As background art for rotating a film deposited substrates, for example, the patent literature 1 as described below recites “a film forming apparatus including substrate rotation driving mechanism” which uses a base plate to rotatably sustain a susceptor and the circumference of the susceptor is driven to rotate through a revolution generating portion. On the other hand, plural substrate tray sustainers disposed on the susceptor rotatably sustain ring-shaped substrate trays.
However, in view of the foregoing background art, the flow model of the source gas is not isotropic in the circumferential direction of revolution since the revolution generation portion (i.e. driving gear) at the outermost circumference. Further, the driving gear is disposed on the outer circumferential side of the susceptor so that the chamber needs to widen in the radial direction of the susceptor. Thus, the size of the chamber became large, and a gear module formed on the outer circumference of the susceptor may cause a rise in the cost and a reduction in the durability.
The present invention focuses on the above points, and its purpose is to provide a film forming apparatus capable of letting the source gases isotropically flow and reducing the chamber size.
The present invention provides a film forming apparatus. The apparatus has a gas introduction portion for film formation, an exhaust portion, and substrate holders containing substrates for film formation, the substrate holders rotatably mounted on a susceptor, and the susceptor disposed within a chamber; a central gear engaged with the plurality of substrate holders disposed at the center of the susceptor, and the central gear joined to a rotating shaft for driving rotation, thereby rotating the substrates; a revolving shaft disposed outside the rotating shaft, and the revolving shaft joined to the susceptor so as to rotatably drive the susceptor, thereby revolving the substrates. That is, the rotation driving and the revolution driving are executed on the central side of the susceptor.
According to one of the main embodiments, a clutch mechanism is provided on the rotating shaft and the revolving shaft. Further, the clutch mechanism is structured to allow the susceptor to move upward and downward. According to another embodiment, the rotating shaft and the revolving shaft are independently driven by motor means. According to another embodiment, a thermal insulating structure is provided between the revolving shaft and the susceptor. Further according to another embodiment, the isotropic exhaust portion is slit-shaped or has equally spaced successive exhaust holes around the susceptor.
The above and other objectives, features, and advantages of the present invention are clearly clarified by the following detailed description and brief description of the drawings.
In view of the present invention, both the rotation and the revolution of the substrate are performed on the central side of the susceptor. Thus, film forming gases can isotropically flow within the chamber, and the film accordingly has uniform distribution of quality within a substrate and among substrates. Furthermore, it is possible to reduce the size of the chamber.
In order to sufficiently understand the essence, advantages and the preferred embodiments of the present invention, the following detailed description will be more clearly understood by referring to the accompanying drawings.
The following description shows the preferred embodiments of the present invention. The present invention is described below by referring to the embodiments and the figures. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the principles disclosed herein. Furthermore, that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.
First, referring to
A central gear 200 is disposed at the center of the chamber 100, and is meshed with the gear provided on the outer circumference of the substrate holders 20. The spindle of the central gear 200 acts as a rotating shaft 210. A clutch mechanism 300 is provided to interpose the rotating shaft 210. Accordingly, the rotational driving force of the driving motor 220 is transmitted to the central gear 200 through the rotating shaft 210 and the clutch mechanism 300. The clutch mechanism 300 is composed of a rotating clutch 400 and a revolving clutch 500.
On the other hand, the above-mentioned rotating shaft 210 rotatably passes the center of the susceptor 30. A cylindrical revolving shaft 310 is provided to surround the rotation shaft 210 and is joined to the susceptor 30. The clutch mechanism 300 is provided to interpose the revolving shaft 310. As a result, the rotational driving force of the driving motor 320 is transmitted to the susceptor 30 through the revolving shaft 310 and the clutch mechanism 300.
A sealing (vacuum sealing) 212 comprising an O ring, a magnetic fluid or the like is provided between the rotating shaft 210 and the revolving shaft 310, and a sealing 312 is provided between the revolving shaft 310 and the chamber 100. Thus, the chamber 100 are kept airtight because of the sealing parts, and the rotating shaft 210 and the revolving shaft 310 can respectively execute independent rotating driving.
The entirety of the chamber 100 is formed in a cylindrical shape, and the opposing plate 110 is provided on the upper inner side. At the center of the upper surface, a process gas (material gas) inlet 112 is formed in the opposing plate 110 so as to further communicate with the inner of the chamber 100. On the other hand, an isotropic exhaust portion 120, which is a ring-shaped slit, is formed on the outer periphery side of the cylindrical support base 40 at the lower end portion of the chamber 100. A plurality of exhaust holes 122 are provided at equal intervals on the lower side of the side portion of the chamber 100, and are connected to the isotropic exhaust portion 120. It is to be noted that the isotropic exhaust part 120 is not formed in a slit shape. As shown in
Furthermore, a heater 130 for heating the substrates is provided on the lower side of the above-mentioned susceptor 30. Reflectors 132 for reflecting the heat of the heater 130 is provided between the heater 130 and the chamber 100 and between the heater 130 and the revolving shaft 310.
Next, with reference to
The whole operation of this embodiment will be described hereinafter. The substrate 10 is accommodated in the substrate holder 20. The susceptor 30 is lowered from an upper side in the drawing with the center alignment. Then, in the rotating clutch 400, the concave clutch plate 410 and the convex clutch plate 420 are engaged with each other. Moreover, in the revolution clutch 500, the concave clutch plate 510 and the convex clutch plate 520 are engaged with each other. Further, the circumferential surface of the susceptor 30 is supported by the support base 40 via the bearing 32. At this state, the driving motor 220 drives the rotating shaft 210 to accordingly rotate. The rotation is transmitted to the central gear 200 through the rotating clutch 400 and so that the central gear 200 rotates. Thus, the substrate holders 20 whose peripheral surfaces mesh with the gear 200 rotate on the susceptor 30. The rotation of the substrate 10 is accordingly performed as shown in
As described above, in a state where the substrate 10 is rotating and revolving, the heater 130 is powered to heat the substrate 10 to a desired temperature and the process gas is introduced to form a desired thin film on the surface of the substrate 10. At this time, as the arrows shown in
As described above, according to the present embodiment, both the rotation and the revolution are driven by the central shaft so that the apparatus can achieve effects in the following ways:
a, the flow of the process gas can be isotropic in the chamber so as to have uniform quality over a film within the substrate and films among the substrates.
b, it is possible to reduce the size of the chamber.
c, with the provision of the clutch, the susceptor is attached to and detached from the central gear in relative to the drive shaft so that it is possible to easily carry out the automatic conveyance of the susceptor.
d, the speed of the substrate rotation and that of the susceptor revolution can be arbitrarily set.
Next, the second embodiment of the present invention will be described with reference to
Next, the third embodiment of the present invention will be described with reference to
It should be noted that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention. Various changes can be made within a certain range. For example, the following are also included.
(1) The shapes and dimensions shown in the above embodiments are merely examples, and may be appropriately changed as necessary.
(2) In the above embodiment, the revolution type vapor phase film forming apparatus has been described as an example, but the present invention is applicable to all other apparatuses with chambers in which a film formation space is provided along a horizontal direction upon the film thickness.
(3) In the above embodiment, only the process gas for film formation is shown. Other purge gases are the same.
(4) The clutch structure shown in the above embodiment is also an example, and is appropriately modified within a range that achieves similar effects.
(5) In the above-described embodiment, the film forming surface of the substrate 10 faces upward, but the invention also can be appropriately applied to a face downward apparatus.
According to the present invention, both the rotation and the revolution of the substrate are performed on the center side of the susceptor, The flow of the film forming gas can be made isotropic in the chamber, and the uniformity of the film quality in the substrate and among the substrates can be achieved. In addition, since it is possible to reduce the size of the chamber. Thus, it can be applied to various film forming apparatuses.
The foregoing embodiments of the invention have been presented for the purpose of illustration. Although the invention has been described by certain preceding examples, it is not to be construed as being limited by them. They are not intended to be exhaustive, or to limit the scope of the invention. Modifications, improvements and variations within the scope of the invention are possible in light of this disclosure.
Number | Date | Country | Kind |
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2018-22258 | Feb 2018 | JP | national |