Claims
- 1. A unitary finishing element having a plurality of discrete finishing members for finishing a semiconductor wafer surface comprising:discrete finishing members wherein: each discrete finishing member has a surface area of less than the surface area of the semiconductor wafer surface being finished; each discrete finishing member has a discrete finishing member finishing surface and a finishing member body; each finishing member body is comprised of a continuous region of higher flexural modulus organic synthetic resin; and a ratio of the shortest distance across in centimeters of the discrete finishing member body to the thickness in centimeters of each discrete finishing member body is at least 10/1; a unitary resilient body comprised of an organic polymer wherein the unitary resilient body has a plurality of discrete finishing members fixedly attached to the unitary resilient body in such a manner that each discrete finishing member is separate from its nearest discrete finishing member; and the unitary resilient body of organic polymer has a lower flexural modulus than the higher flexural modulus organic synthetic resin in the finishing member body.
- 2. The unitary finishing element for finishing the semiconductor wafer according to claim 1 wherein the ratio of the flexural modulus of the finishing member body to the flexural modulus of the unitary resilient body is greater than 10 to 1.
- 3. The unitary finishing element for finishing the semiconductor wafer according to claim 1 wherein each discrete finishing member has a three dimensional discrete synthetic resin particle finishing surface.
- 4. The unitary finishing element for finishing the semiconductor wafer according to claim 1 wherein the discrete finishing member comprises a multiphase polymeric composition.
- 5. The unitary finishing element for finishing the semiconductor wafer according to claim 1 wherein each discrete finishing member comprises a multiphase polymeric composition comprising:a continuous phase of organic synthetic resin comprised of polymer “A”; and discrete synthetic resin particles comprised of polymer “B”.
- 6. The unitary finishing element for finishing the semiconductor wafer according to claim 1 wherein each discrete finishing member comprises a multiphasc polymeric composition comprising:a continuous phase of organic synthetic resin comprised of polymer “A”; discrete synthetic resin particles comprised of polymer “B”; and a compatibilizing agent comprised of polymer “C”.
- 7. The unitary finishing element for finishing the semiconductor wafer according to claim 1 wherein each discrete finishing member comprises a synthetic polymer having a modulus of elasticity of at most 4,000,000 psi.
- 8. A unitary finishing element having a plurality of discrete finishing members for finishing a semiconductor wafer having a plurality of dies comprising:a plurality of discrete finishing members wherein: each discrete finishing member has a discrete finishing member finishing surface and a finishing member body; each finishing member body is comprised of a continuous region of material having a higher flexural modulus; and each discrete finishing member finishing surface has a surface area of less than the surface area of the semiconductor wafer being finished and more than the die surface area; a uniary resilient body comprised of an organic polymer and wherein the unitary resilient body has the plurality of separate and distinct finishing members fixedly attached to the unitary resilient body; and wherein the unitary resilient body of organic polymer having a lower flexural modulus than the higher flexural modulus material in the finishing member body; and the discrete finishing members are separated from their nearest discrete finishing member neighbor by at least ½ times the thickness of the discrete finishing member thickness in centimeters.
- 9. The unitary finishing element having the plurality of discrete finishing members for finishing the semiconductor wafer having the plurality of dies of claim 8 wherein a ratio of the area of the surface of the discrete finishing member finishing surface area to area of the die is from 1/1 to 20/1.
- 10. The unitary finishing element having the plurality of discrete finishing members for finishing the semiconductor wafer having the plurality of dies of claim 8 wherein a ratio of the area of the surface of the discrete finishing member finishing surface area to area of the die is from 2/1 to 15/1.
- 11. The unitary finishing element having the plurality of discrete finishing members for finishing the semiconductor wafer having the plurality of dies of claim 8 wherein:the semiconductor wafer has a plurality of regions of higher device integration density on the semiconductor wafer and a plurality of regions of lower device integration; and wherein each discrete finishing member has a surface area sufficient to simultaneously cover at least five regions of higher device integration during finishing of the semiconductor wafer.
- 12. A method of finishing a semiconductor wafer being finished with a unitary finishing element having a plurality of discrete finishing members comprising the steps of:providing a unitary finishing element comprising: the plurality of discrete finishing members wherein: each discrete finishing member has a surface area of less than the surface area of the semiconductor wafer being finished; each discrete finishing member has a discrete finishing member finishing surface and a finishing member body; and each finishing member body is comprised of a continuous region of material having a higher flexural modulus; a unitary resilient body comprised of an organic polymer and wherein the unitary resilient body has the plurality of separate and distinct finishing members fixedly attached to the unitary resilient body; and the unitary resilient body of organic polymer has a lower flexural modulus than the higher flexural modulus material in the finishing member body; positioning the semiconductor wafer being finished proximate to the unitary finishing element with a finishing element support; applying an operative finishing motion with a finishing pressure between the semiconductor wafer surface being finished and the discrete finishing members in the unitary finishing element; and finishing at a higher finishing rate measured in angstroms per minute on a plurality of higher local regions as compared to a plurality of low local regions proximate to the higher local regions on the semiconductor wafer surface being finished.
- 13. The method of finishing the semiconductor wafer being finished with the unitary finishing element having the plurality of discrete finishing members according to claim 12 further comprising the step of supplying a finishing composition to the operative finishing interface before applying the operative finishing motion.
- 14. The method of finishing the semiconductor wafer being finished with the unitary finishing element having the plurality of discrete finishing members according to claim 12 wherein applying the operative finishing motion keeps the discrete finishing member finishing surfaces substantially parallel with the semiconductor wafer surface being finished.
- 15. The method of finishing the semiconductor wafer being finished with the unitary finishing element having the plurality of discrete finishing members according to claim 12 wherein the finishing element support comprises support on a substantially flat and inflexible finishing element support surface.
- 16. The method of finishing the semiconductor wafer being finished with he unitary finishing element having the plurality of discrete finishing members according to claim 12 wherein the finishing element support consists essentially of support on a substantially flat and inflexible finishing element support surface.
- 17. The method of finishing a semiconductor wafer being finished with the unitary finishing element having the plurality of discrete finishing members according to claim 16 wherein the finishing pressure comprises at least in part applying a variable pressure to the backside surface of a plurality of the discrete finishing members.
- 18. The method of finishing the semiconductor wafer being finished with the unitary finishing element having the plurality of discrete finishing members according to claim 12, having the additional step of supplying an organic boundary lubricant to the operative finishing interface and wherein applying the operative finishing motion forms an organic boundary lubricating layer on the semiconductor wafer surface.
- 19. The method of finishing the semiconductor wafer being finished with the unitary finishing element having the plurality of discrete finishing members according to claim 12 wherein the semiconductor wafer surface being finished has unwanted raised regions and a proximate low local region and wherein the unwanted raised regions have a temperature of at least 7 degrees centigrade higher than in the proximate low local region.
- 20. The method of finishing the semiconductor wafer being finished with the unitary finishing element having the plurality of discrete finishing members according to claim 12 wherein the operative finishing motion applies movement to each discrete finishing member finishing surface which is within 1 degree of parallel with the semiconductor wafer surface being finished during finishing.
- 21. A process for chemical mechanical finishing with a multiphase polymeric composition, the multiphase polymeric composition comprising:a multiphase synthetic polymer composition having a continuous phase of thermoplastic synthetic polymer “A” and a synthetic polymer “B” and wherein the multiphase composition has at least two distinct glass transition temperatures; and a compatibilizing polymer “C”; and the process for chemical mechanical finishing comprises the steps of:applying the multiphase polymeric composition to a semiconductor wafer surface; and operatively finishing a semiconductor wafer with the multiphase polymeric composition.
- 22. The process for chemical mechanical finishing with the multiphase polymeric composition according to claim 21 wherein polymer “B” comprises a crosslinked polymer.
- 23. The process for chemical mechanical finishing with the multiphase polymeric composition according to claim 21 wherein the discrete synthetic resin particles are dynamically formed during melt mixing and polymer “B” comprises a crosslinked polymer rendered substantially more heat resistant than the noncrosslinked polymer “B”.
- 24. The process for chemical mechanical finishing with the multiphase polymeric composition according to claim 21 wherein at least one of the polymers has been post crosslinked after shaping.
- 25. The process for chemical mechanical finishing with the multiphase polymeric composition, the multiphase polymeric composition comprising:a multiphase synthetic polymer composition having at least one filtered polymer which removes particles having a maximum dimension of 20 microns or more capable of scratching a semiconductor wafer surface, the filtering done before adding the at least one filtered polymer to the multiphase polymeric composition; and the process for chemical mechanical finishing comprising the steps of:applying the multiphase polymeric composition to a semiconductor wafer surface; and operatively finishing a semiconductor wafer with the multiphase polymeric composition.
- 26. The process for chemical mechanical finishing with the multiphase polymeric composition according to claim 25 wherein at least one polymer is filtered to remove particles having a maximum dimension of 1 micron or more capable of scratching a semiconductor wafer surface.
- 27. The process for chemical mechanical finishing with the multiphase polymeric composition according to claim 25 wherein at least one filtered polymer has a number average molecular weight of at least 5,000.
- 28. A method for finishing a semiconductor wafer surface being finished with a multiphase polymeric composition, the multiphase polymeric composition comprising:a multiphase synthetic polymer composition having: a continuous phase of thermoplastic synthetic polymer “A”; discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of thermoplastic synthetic polymer “A”; and wherein the multiphase composition has at least two distinct glass transition temperatures; and a compatibilizing agent “C”; and the process for finishing comprises the steps of:applying the multiphase polymeric composition to a semiconductor wafer surface; and operatively finishing a semiconductor wafer with the multiphase polymeric composition.
- 29. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the multiphase polymeric composition is included in the discrete finishing members of a unitary finishing element.
- 30. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the compatibilizing agent “C” comprises a grafted polymer.
- 31. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the compatibilizing agent “C” comprises a block copolymer.
- 32. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the compatibilizing agent “C” forms a polymeric mixture with higher Tensile Strength as measured by ASTM D 638 than that of the same polymeric mixture in the absence of the compatibilizing agent.
- 33. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the compatibilizing agent “C” forms a polymeric mixture with higher Fatigue Endurance as measured by ASTM D 671 than that of the same polymeric mixture in the absence of the compatibilizing agent.
- 34. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the discrete particles comprising synthetic polymer “B” comprise a polymer selected from the group consisting of polyurethanes, polyolefins, polyesters, polyamides, polystyrenes, polycarbonates, polyvinyl chlorides, polyimides, epoxies, chloroprene rubbers, ethylene propylene elastomers, butyl polymers, polybutadienes, polyisoprenes, EPDM elastomers, and styrene butadiene elastomers.
- 35. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the synthetic polymer “B” comprises a polyolefin polymer.
- 36. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 28 wherein the synthetic polymer “B” comprises an elastomer.
- 37. A process for finishing a semiconductor wafer surface with a multiphase polymeric composition, the multiphase polymeric composition comprising:a multiphase synthetic polymer composition having: a continuous phase of synthetic polymer “A”; discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of synthetic polymer “A”; and wherein the multiphase composition has at least two distinct glass transition temperatures; and a compatibilizing agent “C”; and the process for finishing comprises the steps of:applying the multiphase polymeric composition to a semiconductor wafer surface; and operatively finishing a semiconductor wafer with the multiphase polymeric composition.
- 38. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 37 wherein the multiphase polymeric composition is included in the discrete finishing members of a unitary finishing element.
- 39. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 38 wherein the compatibilizing agent “C” comprises a grafted polymer.
- 40. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 38 wherein the compatibilizing agent “C” comprises a block copolymer.
- 41. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 38 wherein the compatibilizing agent “C” forms a polymeric mixture with higher Tensile Strength as measured by ASTM D 638 than that of the same polymeric mixture in the absence of the compatibilizing agent.
- 42. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 38 wherein the compatibilizing agent “C” forms a polymeric mixture with higher Fatigue Endurance as measured by ASTM D 671 than that of the same polymeric mixture in the absence of the compatibilizing agent.
- 43. The method for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 38 wherein the discrete particles comprising synthetic polymer “B” comprise polymers selected from the group consisting of polyurethanes, polyolefins, polyesters, polyamides, polystyrenes, polycarbonates, polyvinyl chlorides, polyimides, epoxies, chloroprene rubbers, ethylene propylene elastomers, butyl polymers, polybutadienes, polyisoprenes, EPDM elastomers, and styrene butadiene elastomers.
- 44. A process for finishing a semiconductor wafer surface with a multiphase polymeric composition, the multiphase polymeric composition comprising:a multiphase synthetic polymer composition having: a continuous phase of synthetic polymer “A”; discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of synthetic polymer “A”; and wherein the synthetic polymer “A” is dynamically reacted with the synthetic polymer “B” forming a multiphase polymeric mixture with higher Ultimate Tensile Strength as measured by ASTM D 638 than that of the same multiphase polymeric mixture in the absence of a dynamic reaction between the two synthetic polymers; and wherein the mulfiphase composition has at least two distinct glass transition temperatures; and the process for finishing comprises the steps of:applying the multiphase polymeric composition to a semiconductor wafer surface; and operatively finishing a semiconductor wafer with the multiphase polymeric composition.
- 45. The process for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 44 wherein the multiphase polymeric composition is included in the discrete finishing members of a unitary finishing element.
- 46. The process for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 44 wherein the discrete particles comprising synthetic polymer “B” comprise a polymer selected from the group consisting of polyurethanes, polyolefins, polyesters, polyamides, polystyrenes, polycarbonates, polyvinyl chlorides, polyimides, epoxies, chloroprene rubbers, ethylene propylene elastomers, butyl polymers, polybutadienes, polyisoprenes, EPDM elastomers, and styrene butadiene elastomers.
- 47. The process for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 44 wherein the synthetic polymer “A” comprises a thermoplastic synthetic resin polymer.
- 48. A process for finishing a semiconductor wafer surface with a multiphase polymeric composition, the multiphase polymeric composition comprising:a multiphase synthetic polymer composition having: a continuous phase of synthetic polymer “A”; discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of thermoplastic synthetic polymer “A” and wherein synthetic polymer “B” comprises a polymer selected from the group consisting of polyurethanes, polyolefins, polyesters, polyamides, polystyrenes, polycarbonates, polyvinyl chlorides, polyimides, epoxies, chloroprene rubbers, ethylene propylene elastomers, butyl polymers, polybutaienes, polyisoprenes, EPDM elastomers,, and styrene butadiene elastomers; and wherein the synthetic polymer “A” is dynamically reacted with the synthetic polymer “B” forming a multiphase polymeric mixture with a higher Fatigue Endurance as measured by ASTM D 671 than that of the same multiphase polymeric mixture in the absence of the a dynamically reaction between the two synthetic resins is preferred; and wherein the multiphase composition has at least two distinct glass transition temperatures; and the process for finishing comprises the steps of:applying the multiphase polymeric composition to a semiconductor wafer surface; and operatively finishing a semiconductor wafer with the multiphase polymeric composition.
- 49. The process for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 48 wherein the multiphase polymeric composition is included in the discrete finishing members of a unitary finishing element.
- 50. The process for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 48 wherein synthetic polymer “B” comprises a polyolefn polymer.
- 51. The process for finishing the semiconductor wafer surface being finished with the multiphase polymeric composition according to claim 48 wherein the synthetic polymer “A” comprises a thermoplastic synthetic resin polymer.
- 52. The unitary finishing element of claim 1 wherein the discrete finishing member finishing surfaces have at most a 3 micron difference in planarity of the active finishing surface.
- 53. The unitary finishing element of claim 1 wherein the discrete finishing member finishing surfaces comprise a multiphase polymeric mixture having at least two polymers which form two different and distinct polymeric regions in the mixture.
- 54. The unitary finishing element of claim 1 wherein the discrete finishing members have a flexural modulus of at least 20,000 psi as measured by ASTM 790 B at 73 degrees Fahrenheit.
- 55. The unitary finishing element of claim 1 wherein the discrete finishing members comprise a composite having fibers.
- 56. The unitary finishing element of claim 1 wherein the discrete finishing members comprise a composite having nonscratching fibers.
- 57. The unitary finishing element of claim 1 wherein the unitary finishing element has different discrete finishing members.
- 58. The unitary finishing element of claim 1 wherein the unitary finishing element has discrete finishing members having different flexural modulus as measured by ASIM 790 B at 73 degrees Fahrenheit.
- 59. The unitary finishing element of claim 9 wherein the discrete finishing members comprise a composite having nonscratching fibers.
- 60. The unitary finishing element of claim 9 wherein the unitary finishing element has different discrete finishing members.
- 61. The unitary finishing element of claim 9 wherein the discrete finishing member finishing surfaces comprise an organic synthetic polymer.
- 62. The unitary finishing element of claim 11 wherein the discrete finishing member finishing surfaces comprise an organic synthetic polymer.
- 63. The unitary finishing element of claim 11 wherein the discrete finishing members comprise a composite having fibers.
- 64. The unitary finishing element of claim 11 wherein the unitary finishing element has discrete finishing members having different flexural modulus as measured by ASTM 790 B at 73 degrees Fahrenheit.
- 65. The method of finishing according to claim 12 wherein the discrete finishing member finishing surface has at most a 3 micron difference in planarity of the active finishing surface.
- 66. The method of finishing according to claim 12 wherein the high local regions have a finishing rate of at least 3 times faster than in the proximate low local regions.
- 67. The process according to claim 21 wherein the step of applying the multiphase polymeric composition to the semiconductor wafer surface comprises applying an abrasive surface of the multiphase polymeric composition to the semiconductor wafer surface.
- 68. The process according to claim 26 wherein the step of applying the multiphase polymeric composition to the semiconductor wafer surface comprises applying an abrasive surface of the multiphase polymeric composition to the semiconductor wafer surface.
- 69. The process according to claim 28 wherein the step of applying the multiphase polymeric composition to the semiconductor wafer surface comprises applying an abrasive surface of the multiphase polymeric composition to the semiconductor wafer surface.
- 70. The process according to claim 28 wherein the compatibilizing agent “C” comprises a polymer having a chemically reactive functional group.
- 71. The process according to claim 37 wherein the step of applying the multiphase polymeric composition to the semiconductor wafer surface comprises applying an abrasive surface of the multiphase polymeric composition to the semiconductor wafer surface.
- 72. The process according to claim 37 wherein the compatibilizing agent “C” comprises a polymer having a chemically reactive functional group.
- 73. The process according to claim 37 wherein the compatibilizing agent “C” comprises a graft polymer.
- 74. The process according to claim 37 wherein the compatibilizing agent “C” comprises a block copolymer.
- 75. The process of claim 44 wherein the step of applying the multiphase polymeric composition to the semiconductor wafer surface comprises applying an abrasive surface of the multiphase polymeric composition to the semiconductor wafer surface.
- 76. The process of claim 48 wherein the step of applying the multiphase polymeric composition to the semiconductor wafer surface comprises applying an abrasive surface of the multiphase polymeric composition to the semiconductor wafer surface.
Parent Case Info
This application claims the benefit of the Provisional Application with Ser. No. 60/131,016 filed on Apr. 26, 1999 entitled “Finishing element having discrete finishing members”; Provisional Application with Ser. No. 60/132,329 filed on May 3, 1999 entitled “Finishing element having new discrete finishing members”; Provisional Application Ser. No. 60/136,954 filed on Jun. 1, 1999 entitled “Finishing element with discrete finishing members”; Provisional Application with Ser. No. 60/141,302 filed on Jun. 28, 1999 entitled “Finishing element with new discrete finishing members”; Provisional Application with Ser. No. 60/141,304 filed on Jun. 28, 1999 entitled “Finishing element having at least one new discrete finishing member”; and Provisional Application with Ser. No. 60/158,797 filed on Oct. 12, 1999 entitled “Finishing element with new discrete finishing members”. The Provisional Patent Applications which this application claims benefit to are included herein by reference in their entirety
US Referenced Citations (16)
Provisional Applications (6)
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Number |
Date |
Country |
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60/131016 |
Apr 1999 |
US |
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60/132329 |
May 1999 |
US |
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60/136954 |
Jun 1999 |
US |
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60/141302 |
Jun 1999 |
US |
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60/141304 |
Jun 1999 |
US |
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60/158797 |
Oct 1999 |
US |