The present disclosure generally relates to controlling fluid flows. More particularly, the present disclosure relates to controlling the fluid flows in semiconductor processing systems, such as the flow of fluids in semiconductor processing systems employed to deposit films onto substrates during the fabrication of semiconductor devices.
Semiconductor processing systems, such as semiconductor processing systems employed to deposit material layers onto substrates during the fabrication of semiconductor devices, commonly employ fluid flows during semiconductor device fabrication. In some semiconductor processing operations, the fluids may contain hazardous materials. For example, semiconductor processing systems employed to deposit material layers onto substrates may employ fluids containing materials known to be hazardous to human health, are flammable, and/or which are corrosive. Semiconductor processing systems may also issue exhaust flows containing hazardous materials, such as a residual material layer precursor and/or reaction products generated during the processing operation. To ensure safety, semiconductor processing systems therefore typically include countermeasures effective to limit (or eliminate) risks associated with fluid flows containing hazardous materials during processing. For example, flow control devices employed to control the flow of fluids containing hazardous materials are generally housed within an enclosure—and the enclosure ventilated using a vent flow to remove hazardous material from within the enclosure in the unlikely event that fluids leaks from the flow control device during process. For similar reasons inert gases and/or diluents are generally intermixed into exhaust flows containing flammable and/or corrosive materials issued by semiconductor processing systems during semiconductor processing.
Typically, the flow rate of the vent flow provided to a flow control device is sized according to the maximum flow rate of the hazardous material possible through the flow control device. This ensures risk mitigation in the event that the flow control device fails in a fully open position. The same holds true for the flow rate of inert gas and diluents provided to exhaust flows, which are also typically sized according to maximum flow of the hazardous material that could be present in the exhaust flow based on the flow rating of the flow control device providing the fluids responsible for the hazardous material in the exhaust flow. While generally satisfactory insofar of limiting the risks attendant to the hazardous material provided and/or generated during processing, oversizing the vent flow, the inert gas flow, and/or the diluent flow in relation to the flow rate required by the actual processing performed by the semiconductor processing system increases the cost associated with the processing. Oversizing the inert gas flow provided to the exhaust flow and/or the diluent flow provided to the exhaust flow may also increases emissions of materials potentially harmful to the environment, such nitrogen oxide emissions, to levels beyond that necessary given the processing actually performed by the semiconductor processing system.
Such systems and methods have generally been considered suitable for their intended purpose. However, there remains a need in the art for improved flow control arrangements, semiconductor processing systems having flow control arrangements, and flow control methods. The present disclosure provides a solution to this need.
A flow control arrangement is provided. A flow control arrangement includes a housing, an isolation valve, and a flow switch. The housing seats an inlet conduit and an outlet conduit. The isolation valve is arranged in the housing and is connected to the inlet conduit. The flow switch is arranged in the housing, is connected to the isolation valve, and fluidly couples the outlet conduit to the isolation valve. The flow switch further has a shutoff trigger and is operatively connected to the isolation valve to close the isolation valve when flow traversing the isolation valve is greater than the shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples may include that the housing of the flow control arrangement includes a tamperproof body enclosing the isolation valve and the flow switch.
In addition to one or more of the features described above, or as an alternative, further examples may include of the flow control arrangement may include a relay and a solenoid. The relay may be arranged outside of the housing and operatively associated with the flow switch. The solenoid may be electrically connected to the relay and arranged in the housing. The solenoid may eb operatively connected to the isolation valve to close the isolation valve when flow rate of a fluid traversing the flow switch is greater than the shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control arrangement may include an internal communication harness, an electrical connector, an external communication cable, and a controller. The internal communication harness is arranged in the housing, is connected to the isolation valve, and is further connected to the flow switch. The electrical connector is connected to the internal communication harness and is seated in a wall of the housing. The external communication cable is arranged outside of the housing and is connected to the electrical connector. The controller is connected to the external communication cable and operably connects the flow switch to the isolation valve through the external communication cable, the electrical connector, and the internal communication harness.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control arrangement may include a controller arranged outside of the housing and operably connecting the flow switch to the isolation valve.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control arrangement may include that the controller includes a safety programmable logic controller device.
In addition to one or more of the features described above, or as an alternative, further examples may include that the controller includes a processor disposed in communication with a memory having a non-transitory machine-readable medium with a plurality of program modules recorded thereon containing instructions. The instructions may cause the processor to receive a shutoff signal from the flow switch and provide a closure signal to the isolation valve upon receipt of the shutoff signal from the flow switch.
In addition to one or more of the features described above, or as an alternative, further examples may include that the isolation valve is a first an isolation valve and that the flow control arrangement incudes a second isolation valve. The second isolation valve may be arranged in the housing and couple the first isolation valve to the outlet conduit. The second isolation valve may be operably associated with the flow switch.
In addition to one or more of the features described above, or as an alternative, further examples may include a first relay, a first solenoid, a second relay, and a second solenoid. The first relay may be arranged outside of the housing and operatively associated with the flow switch. The first solenoid may be electrically connected to the relay, arranged in the housing, and operatively connected to the first isolation valve to close the first isolation valve when the flow rate of the fluid traversing the flow switch is greater than the shutoff trigger. The second relay may be arranged outside of the housing and operatively associated with the flow switch. The second solenoid may be electrically connected to the second relay, arranged in the housing, and operatively connected to the second isolation valve to close the second isolation valve when the flow ate of the fluid traversing the flow switch is greater than the shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples may include that the flow control arrangement includes an internal communication harness, an electrical controller, an external communication cable, and a controller. The internal communication harness may be arranged in the housing and connected to the first isolation valve, the flow switch, and the second isolation valve. The electrical connector may be connected to the internal communication harness and seated in a wall of the housing. The external communication cable may be connected to the electrical connector and arranged outside of the housing. The controller may be connected to the external communication cable and operably connect the flow switch to the first isolation valve and the second isolation valve.
In addition to one or more of the features described above, or as an alternative, further examples may include that controller has processor disposed in communication with a memory having a non-transitory machine-readable medium with a plurality of program modules recorded on memory containing instructions. The instructions may cause the processor to the processor to receive a shutoff signal from the flow switch, provide a first closure signal to the first isolation valve upon receipt of the shutoff signal from the flow switch, and provide a second closure signal to the second isolation valve upon receipt of the shutoff signal from the flow switch.
In addition to one or more of the features described above, or as an alternative, further examples may include that the flow switch is a first flow switch and that the flow control arrangement further includes a second flow switch. The second flow switch may couple the first flow switch to the outlet conduit and be operably connected to the isolation valve.
In addition to one or more of the features described above, or as an alternative, further examples may include that shutoff trigger is a first shutoff trigger and the second flow switch has a second shutoff trigger. The second shutoff trigger may be substantially equivalent to the first shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples may include that the shutoff trigger is a first shutoff trigger and that the second flow switch has a second shutoff trigger. The second shutoff trigger is different, e.g., may be greater than of less than, from the first shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control arrangement may include a controller arranged outside of the housing. The controller may operably connect the first flow switch and the second flow switch to the isolation valve.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control arrangement may include that the isolation valve is a first isolation valve, the flow switch is a first flow switch, and that the flow control arrangement further includes a second flow switch and a second isolation valve. The second flow switch may be connected to the first flow switch and coupled by the first flow switch to the first isolation valve. The second isolation valve may be connected to the second flow switch and coupled by the second flow switch to the first flow switch. The outlet conduit may be connected to the second isolation valve, the second isolation valve may couple the outlet conduit to the second flow switch, and the second flow switch may be operably connected to at least one of the first isolation valve and the second isolation valve.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control arrangement may include that the first flow switch is operably connected to both the first isolation valve and the second isolation valve, and that the second flow switch is operably connected to both the first isolation valve and the second isolation valve.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control arrangement may include one of the first flow switch and the second flow switch is operably connected to only one of the first isolation valve and the second isolation valve.
A semiconductor processing system is provided. The semiconductor processing system includes a gas box, a flow control arrangement as described above, a process chamber and a fluid source. The gas box includes a flow control device with a flow rating. The flow control arrangement is arranged outside of the gas box and the flow control device is connected to the outlet conduit, and therethrough to the inlet conduit of the flow control arrangement. The process chamber includes and is fluidly couples to the flow control arrangement through the flow control device. The fluid source includes a hazardous process material, is connected to the inlet conduit of the flow control arrangement, and is connected the flow control arrangement to the process chamber.
In addition to one or more of the features described above, or as an alternative, further examples of the semiconductor processing system may include a vent source connected to the gas box and providing a vent flow to the gas box. The vent flow may be undersized relative to the flow rating of the flow control device.
In addition to one or more of the features described above, or as an alternative, further examples of the semiconductor processing system may include an exhaust source and an inert/diluent fluid source. The exhaust source may be connected to the process chamber and receive an exhaust flow from the process chamber. The inert/diluent fluid source may be connected exhaust source and provide an inert/diluent fluid to the exhaust flow. An inert/diluent fluid flow rate of the inert/diluent fluid provided to the exhaust flow may be undersized relative to the flow rating of the flow control device.
A flow control method is provided. The flow control method includes, at a flow control arrangement as described above, receiving a flow of a fluid including a hazardous process material (HPM) at the inlet conduit and comparing flow rate of the fluid to the shutoff trigger. When the flow rate of the fluid is less than the shutoff trigger, the flow control arrangement flows from the inlet conduit to the outlet conduit through the isolation valve and the flow switch. When the flow rate of the fluid is greater than the shutoff trigger the flow control arrangement fluidly separates the outlet conduit from the inlet conduit using the isolation valve. It is contemplated that the shutoff trigger be less than a flow rating of a flow control device coupling the outlet conduit to a semiconductor processing system. It is also contemplated that at least one of the vent flow provided to a gas box of the semiconductor processing system and/or an inert/diluent fluid provided to an exhaust flow issued by process chamber of the semiconductor processing system be undersized relative to a flow rating of a flow control device arranged in the gas box and fluidly coupling the flow control arrangement to the process chamber.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control method may include closing only one of a first isolation valve and a second shutoff coupling the inlet conduit to the outlet conduit when the flow rate of the fluid is greater than the shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control method may include closing both one of a first isolation valve and a second shutoff coupling the inlet conduit to the outlet conduit when the flow rate of the fluid is greater than the shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control method may include comparing the flow rate of the fluid to a first shutoff trigger and a second shutoff trigger, and closing the isolation valve when the flow rate is greater than only one of the first shutoff trigger and the second shutoff trigger.
In addition to one or more of the features described above, or as an alternative, further examples of the flow control method may include comparing the flow rate of the fluid to a first shutoff trigger and a second shutoff trigger, and closing the isolation valve when the flow rate is greater than both the first shutoff trigger and the second shutoff trigger.
This summary is provided to introduce a selection of concepts in a simplified form. These concepts are described in further detail in the detailed description of examples of the disclosure below. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.
These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the drawings of certain embodiments, which are intended to illustrate and not to limit the invention.
It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the relative size of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of illustrated embodiments of the present disclosure.
Reference will now be made to the drawings wherein like reference numerals identify similar structural features or aspects of the subject disclosure. For purposes of explanation and illustration, and not limitation, a partial view of an example of a semiconductor processing system with a flow control arrangement in accordance with the present disclosure is shown in
As used herein, the term “substrate” may refer to any underlying material or materials that may be used, or upon which, a device, a circuit, or a film may be formed. The “substrate” may be continuous or non-continuous; rigid or flexible; solid or porous. The substrate may be in any form such as a powder, a plate, or a workpiece. Substrates in the form of a plate may include wafers in various shapes and sizes. Substrates may be made from materials including silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide by way of example and not for limitation.
As used herein, the term “HPM” refers to a solid, liquid, or gas associated with semiconductor device fabrication that has a degree-or-hazard rating of 3 or 4 in health, flammability, instability, or water reactivity in accordance with NFPA 704 (“Standard System for the Identification of the Hazards of Materials for Emergency” 2022 Edition). HPMs may be used directly in research, laboratory, or production processes associated with semiconductor device fabrication. HPMs may be an effluent generated in connection with research, laboratory, or production processes associated with semiconductor device fabrication. HPMs may be associated with the fabrication of a semiconductor device which, as an end product, is not itself hazardous.
Referring to
The fluid source 12 is connected to the flow control arrangement 100 and includes a fluid 24. The fluid 24 may include a liquid, a gas, or a mixture of liquid and a gas. In certain examples, the fluid may include a material layer precursor. In accordance with certain examples, the fluid 24 may include an HPM such as a material known to be hazardous to human health, is flammable or pyrophoric, and/or which may be corrosive. Examples of hazardous materials that may be included in the fluid 24 include hydrogen (H 2) gas, hydrochloric acid (HCl), silane (SiH4), dichlorosilane (H2SiCl2), and/or trichlorosilane (HCl3Si).
The gas box 14 houses a flow control device 26 and is connected to the vent source 16. The gas box 14 further connects the flow control arrangement 100 to the process chamber 18 and is in turn connected to the vent source 16. The flow control device 26 has a flow rating 28 (e.g., a maximum volumetric or mass flow rate) and in turn fluidly couples the flow control arrangement 100, and therethrough the fluid source 12, to the process chamber 18. The vent source 16 is connected to the gas box 14 and is configured to draw a vent flow 30 from within an interior of the gas box 14. In certain examples, the vent source 16 may be configured to make up the vent flow 30 using a secondary flow drawn (at least in part) from the environment external to the gas box 14. In such examples the vent flow 30 may comprise cleanroom air forming the make-up secondary vent flow drawn from a cleanroom environment housing the semiconductor processing system 10 is located. As will be appreciated by those of skill in the art in view of the present disclosure, the vent flow 30 removes the fluid 24 from within the interior of the gas box 14 in the unlikely event that the flow control device 26 develops a leak. It is contemplated that the flow control device 26 may include one or more of the metering valve, an orifice plate, and/or a mass flow controller device.
The process chamber 18 is connected to the gas box 14, couples the gas box 14 to the exhaust source 20, and houses a substrate support 32. More specifically, the interior of the process chamber 18 is fluidly coupled to the flow control device 26 and therethrough to the fluid source 12 through the flow control arrangement 100 to provide the fluid 24 to the interior of the process chamber 18. In certain examples, the substrate support 32 may include a susceptor structure. In accordance with certain examples, the substrate support 32 may include a heater structure. It is contemplated that the substrate support 32 be configured to support a substrate 34, and that the process chamber 18 be configured to cause a material layer 36 to be deposited onto an upper surface of the substrate 34 using the fluid 24. In certain examples, the material layer 36 may be deposited using an epitaxial deposition technique. In accordance with certain examples, the material layer 36 may be deposited using an atomic layer deposition (ALD) technique. It is also contemplated that, in accordance with certain examples, the material layer 36 may be deposited using a plasma deposition technique, such as a plasma-enhanced chemical vapor deposition technique or a plasma-enhanced ALD technique.
The exhaust source 20 is connected to the process chamber 18 and fluidly couples the interior of the process chamber 18 to the external environment 38 to communicate an exhaust flow 40 (e.g., residual material layer precursor and/or reaction products), to the external environment 38. The inert/diluent fluid source 22 fluidly coupled to the exhaust flow 40, e.g., via the exhaust source 20, for introduction of an inert/diluent fluid flow 42 into the exhaust flow 40 for communication therewith to the external environment 38. In certain examples, the exhaust source 20 may include a vacuum pump. In accordance with certain examples, the exhaust source may be fluidly coupled to the external environment 38 by an abatement device, such as scrubber.
The inert/diluent fluid source 22 is connected to the exhaust source 20 and is fluidly coupled therethrough to the external environment 38. It is contemplated that the inert/diluent fluid source 22 be configured to provide the inert/diluent fluid flow 42 to the exhaust flow 40 issued by the process chamber 18. In certain examples, the inert/diluent fluid flow 42 may include (e.g., consist of or consist essentially of) nitrogen (N 2) gas, argon (Ar), helium (He), or a mixture thereof. As will be appreciated by those of skill in the art in view of the present disclosure, the inert/diluent fluid flow 42 may include other materials and remain within the scope of the present disclosure.
As has been explained above, providing the vent flow 30 to the gas box 14 and/or the inert/diluent fluid flow 42 to the exhaust flow 40 increases cost of operating the semiconductor processing system 10, typically in correspondence to the flow rate of the vent flow 30 and/or inert/diluent fluid flow 42. To limit the costs attendant with providing the vent flow 30 to the gas box 14 and/or the inert/diluent fluid flow 42 to the exhaust flow 40, the semiconductor processing system 10 includes the flow control arrangement 100. The flow control arrangement 100 is configured to limit the flow rate of at least one of the vent flow 30 provided to the gas box 14 and/or the inert/diluent fluid flow 42 provided to the exhaust flow 40 by sizing the flow rates of either (or both) according flow rate of the fluid 24 actually employed to deposit the material layer 36 onto the substrate 34—and not the flow rating 28 of the flow control device 26—while providing a predetermined safety integrity level (SIL). As will be appreciated by those of skill in the art in view of the present disclosure, limiting the flow rate of the inert/diluent fluid flow 42 introduced into the exhaust flow 40 may further limit the amount of environmentally harmful material introduced into the external environment 38 by the semiconductor processing system 10, for example, by limiting nitrogen oxide emissions associated by nitrogen gas introduced into the exhaust flow 40 issued by the process chamber 18.
With reference to
The housing 106 is arranged between the fluid source 12 (shown in
The inlet conduit 108 and the outlet conduit 112 are seated in the housing 106. The inlet conduit 108 is connected to the fluid source 12 and couples the fluid source 12 to the isolation valve 102. The isolation valve 102 is connected to the interconnect conduit 110 and couples the inlet conduit 108 to the interconnect conduit 110. The interconnect conduit 110 is connected to the flow switch 104 and couples the isolation valve 102 to the flow switch 104. The flow switch 104 is connected to the outlet conduit 112 and couples of the interconnect conduit 110 to the outlet conduit 112. It is contemplated that the gas box 14 (shown in
The isolation valve 102 is arranged within the housing 106 and has an open position (shown in
The flow switch 104 is arranged within the housing 106, has a shutoff trigger 126, and couples the isolation valve 102 to the flow control device 26 (shown in
In certain examples the shutoff trigger 126 may be less than the flow rating 28 (shown in
The internal communication harness 114 is arranged in the housing 106, is connected to the isolation valve 102 and the flow switch 104, and couples the isolation valve 102 and the flow switch 104 to the electrical connector 116. The electrical connector 116 is seated in a wall of the housing 106, is connected to the internal communication harness 114, and couples the internal communication harness 114 to the external communication cable 118. The external communication cable 118 is connected to the electrical connector 116 and couples the electrical connector 116 to the controller 120. In certain examples, the internal communication harness 114 and the external communication cable 118 may include discrete (i.e., electrically isolated from one another) conductors electrically connecting the controller 120 to the isolation valve 102 and the flow switch 104, potentially improving reliability by avoiding the need to position an analog-to-digital converter within the housing 106.
The controller 120 is connected to the external communication cable 118 and therethrough to the isolation valve 102 and the flow switch 104. More specifically, the controller 120 is electrically connected to the isolation valve 102 and the flow switch 104 by the external communication cable 118 and the internal communication harness 114 through the electrical connector 116, the controller 120 thereby operably connecting the flow switch 104 to the isolation valve 102. In the illustrated example the controller 120 includes a device interface 132, a processor 134, a user interface 136, and a memory 138. The device interface 132 connects the processor 134 to the isolation valve 102 and the flow switch 104, which may be through the external communication cable 118 and the internal communication harness 114 via the electrical connector 116. The processor 134 is in turn operably connected to the user interface 136 to receive user input and/or provide user output therethrough, and is disposed in communication with the memory 138. The memory 138 includes a non-transitory machine-readable medium having a plurality of program modules 140 recorded thereon containing instructions that, when read by the processor 134, cause the processor 134 to execute certain operations. Among the operations are operations of a flow control method 500, as will be described.
In certain examples, the controller 120 may include a safety programmable logic controller (PLC) device 142. In accordance with certain examples, the flow switch 104 may include a sensor 144, such as a flow rate sensor, and the controller 120 may be configured to monitor performance of the flow control arrangement 100, for example, by assessing leakage through the isolation valve 102 subsequent to closure. As will be appreciated by those of skill in the art in view of the present disclosure, performance monitoring may improve reliability of the flow control arrangement 100, potentially increasing the SIL of the flow control arrangement 100. Examples of suitable safety PLC devices include TwinSafe® safety PLC devices, available from the Beckhoff Automation GmbH & Co. KG of Verl, Germany.
In accordance with certain examples, the controller 120 may operably couple the flow switch 104 to the isolation valve 102 through a solenoid 146 and a relay 148. The solenoid 146 may arranged within the housing 106 and operably connected to a valve member, such a diaphragm element, disposed within the isolation valve 102. The relay 148 may be arranged outside of the housing 106 and electrically connected to the solenoid 146, for example, through the external communication cable 118 and the internal communication harness 114. It is contemplated that the controller 120 close the relay 148 responsive to receipt of the shutoff signal 128 from the flow switch 104. Closure of the relay 148 energizes the solenoid 146, which in turn closes the isolation valve 102. In certain examples, the solenoid 146 may be latching-type solenoid, the solenoid 146 thereby maintaining the isolation valve 102 in the closed position when the shutoff signal 130 provided by the flow switch 104 is temporal or transitory. In accordance with certain examples, closure of the relay 148 responsive to the shutoff signal 128 may be according to a nuisance trip detection filter configured to detect spurious shutoff signal events. As will be appreciated by those of the skill in the art in view of the present disclosure, such signal analysis is spurious signaling detection may improve the reliability of the flow control arrangement 100, for example, by reducing (or eliminating) nuisance tripping.
As shown in
As shown in
In certain examples, the shutoff trigger 126 may be substantially equivalent (e.g., matched) to the flow rating 28 (shown in
With reference to
The housing 206 seats the inlet conduit 208 and the outlet conduit 210. The housing 206 is also arranged between the fluid source 12 (shown in
The inlet conduit 208 and the outlet conduit 210 are both seated in a wall of the housing 206. The first isolation valve 202, the flow switch 212, and the second isolation valve 204 are each arranged within an interior 226 of the housing 206. In this respect the first isolation valve 202 is connected to the inlet conduit 208, the first interconnect conduit 214 is connected to the first isolation valve 202 and is in selective fluid communication therethrough with the inlet conduit 208, and the flow switch 212 is connected to the first interconnect conduit 214 and is in fluid communication therethrough with the first isolation valve 202. In further respect, the second interconnect conduit 216 is connected to the flow switch 212 and is in fluid communication therethrough with the first interconnect conduit 214, the second isolation valve 204 is connected to the second interconnect conduit 216 and is in fluid communication therethrough with the flow switch 212, and the outlet conduit 210 is connected to the second isolation valve 204 and is in selective fluid communication therethrough with the first isolation valve 202 through the flow switch 212.
The inlet conduit 208 is with the fluid source 12 (shown in
With reference to
As shown in
As shown in
With reference to
The housing 306 seats the inlet conduit 308 and the outlet conduit 310. The housing 306 is further arranged between the fluid source 12 (shown in
The isolation valve 312 is connected to the inlet conduit 308 and connected to the first flow switch 302 by the first interconnect conduit 314, the first flow switch 302 and the second flow switch 304 being in selective fluid communication with the inlet conduit 308 through the isolation valve 312. The second interconnect conduit 316 is connected to the first flow switch 302, connects the second flow switch 304 to the first flow switch 302, and is fluidly coupled to the outlet conduit 310 by the second flow switch 304. The second flow switch 304 is connected to the second interconnect conduit 316, connects the second flow switch 304 to the outlet conduit 310, and fluidly couples to the outlet conduit 310 to the isolation valve 312 for selective fluid communication therethrough with the inlet conduit 308. It is contemplated that the inlet conduit 308 be in fluid communication with the fluid source 12 (shown in
Referring to
In certain examples the second shutoff trigger 330 may be substantially equivalent to the first shutoff trigger 328. In such examples the second flow switch 304 provides redundancy to the flow control arrangement 300, the second flow switch 304 causing the isolation valve 312 to close in the unlikely event that the first flow switch 302 fails to provide the first shutoff trigger 328 when flow of fluid traversing the first flow switch 302 exceeds the first shutoff trigger 328. Similarly, provision of the first flow switch shutoff signal 332 by the first flow switch 302 ensures closure of the isolation valve 312 in the unlikely event that the second flow switch 304 fails to provide the second flow switch shutoff signal 334 when fluid flow traversing the second flow switch 304 exceeds the second shutoff trigger 330. As will be appreciated by those of skill in the art in view of the present disclosure, the redundancy provided by the first shutoff trigger 328 and the second shutoff trigger 330 being substantially equivalent to one another may provide the flow control arrangement 300 with a higher SIL rating than otherwise possible.
In certain examples, one of the first shutoff trigger 328 and the second shutoff trigger 330 may be smaller than the other the first shutoff trigger 328 and the second shutoff trigger 330. The smaller of the first shutoff trigger 328 and the second shutoff trigger 330 may be employed to verify closure of the isolation valve 312, failure of flow through the one of the first flow switch 302 and the second flow switch 304 having the smaller of the first shutoff trigger 328 and the second shutoff trigger 330 providing indication of leakage through the isolation valve 312 subsequent to closure in such examples. For example, the controller 324 may understand receipt of a shutoff signal provided by the one of the first flow switch 302 and the second flow switch 304 having the smaller of the first shutoff trigger 328 and the second shutoff trigger 330 as indication of normal operation when no closure signal has been provided to the isolation valve 312, and indication of abnormal operation subsequent to provision of the isolation valve closure signal 336 (shown in
In certain examples the first flow switch shutoff signal 332 and the second flow switch shutoff signal 334 may be communicated to the controller 324 through the internal communication harness 318, the electrical connector 320, the external communication cable 322. In this respect the controller 324 may electrically connect both the first flow switch 302 and the second flow switch 304 to the isolation valve 312. For example, the electrical connector 320 may be seated in the wall of the housing 306 and connected therethrough to the controller 324 by the external communication cable 322. The internal communication harness 318 may be arranged in the housing 306 and in turn connect the electrical connector 320 to each of the isolation valve 312, the first flow switch 302, and the second flow switch 304. In accordance with certain examples, the external communication cable 322 and the internal communication harness 318 may both include dedicated conductors (e.g., electrically isolated from one another) to communicate the each of the first shutoff trigger 328, the second shutoff trigger 330, and the isolation valve closure signal 336 between the first flow switch 302 and the controller 324, the second flow switch 304 and the controller 324, and the controller 324 and the isolation valve 312. As will be appreciated by those of skill in the art in view of the present disclosure, other communication arrangements are possible and remain within the scope of the present disclosure.
Operative association of the first flow switch 302 and the second flow switch 304 with the isolation valve 312 may be accomplished through a solenoid 338 and a relay 340. In this respect the solenoid 338 may be arranged in the housing 306 and operatively connected to the isolation valve 312. The relay 340 may be arranged outside of the housing 306 (e.g., as part of the controller 324), operatively associated with the controller 324, and in communication with a power source to communicate the isolation valve closure signal 336 to the isolation valve 312. As above, it is contemplated that the solenoid 338 may be a latching solenoid, allowing the isolation valve 312 to remain closed when fluid flow through the first flow switch 302 and the second flow switch 304 ceases subsequent to closure of the isolation valve 312.
With reference to
As shown in
The inlet conduit 412 fluidly couples the flow control arrangement 400 to the fluid source 12 (shown in
The first isolation valve 402 is connected to the inlet conduit 412 and couples the first interconnect conduit 416 to the inlet conduit 412. The first isolation valve 402 has an open position and a closed position. As shown in
With continuing reference to
The first flow switch 404 is operatively connected to at least one of the first isolation valve 402 and the second isolation valve 408. In this respect the first flow switch 404 has a first shutoff trigger 430 (e.g., a mass or volumetric flow rate) above which the first flow switch 404 causes the at least one of the first isolation valve 402 and the second isolation valve 408 to close. In certain examples, the first flow switch 404 may be operatively connected to the first isolation valve 402 to close the first isolation valve 402 when flow rate of the fluid 24 traversing the first flow switch 404 is greater than (e.g., rises above) the first shutoff trigger 430. In accordance with certain examples, the first flow switch 404 may be operatively connected to the second isolation valve 408 to switch a to close the second isolation valve 408 when flow rate of the fluid 24 traversing the first flow switch 404 is greater than the first shutoff trigger 430. It is also contemplated that, in accordance with certain examples, the first flow switch 404 may be operatively connected to both the first isolation valve 402 and the second isolation valve 408 to close both the first isolation valve 402 and the second isolation valve 408 when flow rate of the fluid 24 traversing the first flow switch 404 is greater than the first shutoff trigger 430. As will be appreciated by those of skill in the art in view of the present disclosure, operative connection of the first flow switch 404 to both the first isolation valve 402 and the second isolation valve 408 may increase the SIL rating of the flow control arrangement 400, such as to a SIL rating of between 2 and 4 in certain examples. Examples of suitable flow switches include FS10A flow switches, available from Fluid Components International LLC of San Marcos, California.
The second interconnect conduit 418 is similar to the first interconnect conduit 416, is additionally connected to the first flow switch 404, and further couples the second flow switch 406 to the first flow switch 404. In certain examples, the second interconnect conduit 418 may be connected to the first flow switch 404 without a fitting or fastener, for example by a welded joint or connection, reducing (or eliminating) risk of fluid leakage within the housing 410 at the connection. In accordance with certain examples, the second flow switch 406 may be connected to the second interconnect conduit 418 without a fitting of fastener, for example also by a welded joint or connection, also reducing (or eliminating) risk of fluid leakage within the housing 410 at the connection. As will be appreciated by those of skill in the art in view of the present disclosure, the second flow switch 406 may be directly connected to the first flow switch 404, such as at a welded joint, and remain within the scope of the present disclosure.
The second flow switch 406 is similar to the first flow switch 404, additionally couples the second isolation valve 408 to the first flow switch 404 and therethrough to the first isolation valve 402, and is further operatively connected to at least one of the first isolation valve 402 and the second isolation valve 408. It is contemplated that the second flow switch 406 have a second shutoff trigger 434 that, when flow rate of the fluid 24 is greater than (e.g., rises above) the second shutoff trigger 434, causes the second flow switch 406 to close the at least one of the first isolation valve 402 and the second isolation valve 408. In certain examples, the second flow switch 406 may be operatively connected to the first isolation valve 402 to close the first isolation valve 402 when the flow rate of the fluid 24 traversing the second flow switch 406 is greater the second shutoff trigger 434. In accordance with certain examples, the second flow switch 406 may be operatively connected to the second isolation valve 408 to close the second isolation valve 408 when the flow rate of the fluid 24 traversing the second flow switch 406 is greater than the second shutoff trigger 434. It is also contemplated that, in accordance with certain examples, the second flow switch 406 may be operatively connected to both the first isolation valve 402 and the second isolation valve 408 to close both the first isolation valve 402 and the second isolation valve 408 when the flow rate of the fluid 24 traversing the first flow switch 404 is greater than the first shutoff trigger 430. As will be appreciated by those of skill in the art in view of the present disclosure, operative connection of the second flow switch 406 to both the first isolation valve 402 and the second isolation valve 408 may further increase the SIL rating of the flow control arrangement 400, such as to a SIL rating of between 2 and 4 in certain examples.
The third interconnect conduit 420 is also similar to the first interconnect conduit 416, is additionally connected to the second flow switch 406, and further couples the second isolation valve 408 to the second flow switch 406. In certain examples, the third interconnect conduit 420 may be connected to the second flow switch 406 without a fitting or fastener, for example by a welded joint or connection, reducing (or eliminating) risk of fluid leakage within the housing 410 at the connection. In accordance with certain examples, the second isolation valve 408 may be connected to the third interconnect conduit 420 without a fitting of fastener, for example also by a welded joint, also reducing (or eliminating) risk of fluid leakage within the housing 410 at the connection. As will be appreciated by those of skill in the art in view of the present disclosure, the second isolation valve 408 may be directly connected to the second flow switch 406, such as at a welded joint or connection, and remain within the scope of the present disclosure.
The second isolation valve 408 is similar to the first isolation valve, is additionally connected to the third interconnect conduit 420, and further couples the outlet conduit 414 third interconnect conduit 420 and therethrough to the first isolation valve 402 for selective fluid communication with the inlet conduit 412. It is contemplated that the second isolation valve 408 have an open position and a closed position. As shown in
It is contemplated that operative association of the first flow switch 404 and the second flow switch 406 with the first isolation valve 402 and the second isolation valve 408 may be through the controller 428. In this respect the controller 428 is arranged outside of the housing 410 and is connected by the external communication cable 426 to the electrical connector 424. The electrical connector 424 is seated in the housing 410 and is connected to internal communication harness 422. The internal communication harness 422 is arranged in the housing 410 and is in turn connected to each of the first isolation valve 402, the first flow switch 404, the second flow switch 406, and the second isolation valve 408. As will be appreciated by those of skill in the art in view of the present disclosure, other connectivity arrangements are possible and remain within the scope of the present disclosure.
With continuing reference to
In certain examples, the second isolation valve 408 may include a second solenoid 444 and the controller 428 may include a second relay 446. The second solenoid 444 may be arranged in the housing 410. The second solenoid 444 may further be operatively connected to the first isolation valve 402 to close the first isolation valve 402 upon receipt of a second isolation valve closure signal 448 provided by the second relay 446. The controller 428 may be operatively connected to the second relay 446 to close the second relay 446 upon receipt of a second flow switch shutoff signal 450 provided by the second flow switch 406 when flow rate of the fluid 24 traversing the second flow switch 406 is greater than the second shutoff trigger 434. The second solenoid 444 may include a latching solenoid, the second isolation valve 408 remaining closed upon cessation of the second flow switch shutoff signal 450 and/or the second isolation valve closure signal 448. As will be appreciated by those of skill in the art in view of the present disclosure, other operative connection arrangements between the second flow switch 406 and one or more of the first isolation valve 402 and the second isolation valve 408 and remain within the scope of the present disclosure.
In certain examples, the second shutoff trigger 434 may be equivalent (e.g., matched) to the first shutoff trigger 432. As will be appreciated by those of skill in the art in view of the present disclosure, examples of the flow control arrangement 400 wherein the second shutoff trigger 434 is equivalent to the first shutoff trigger 432 provides redundant shutoff triggering to the first isolation valve 402 and the second isolation valve 408 to the flow control arrangement 400. Redundant shutoff triggering can reduce (or eliminate) the likelihood that the flow control arrangement 400 cease flow of the fluid 24 (shown in
In accordance with certain examples, the second shutoff trigger 434 may be different than (e.g., unmatched) the first shutoff trigger 432. For example, the second shutoff trigger 434 may be smaller than the first shutoff trigger 432. Alternatively, the second shutoff trigger 434 may be greater than the first shutoff trigger 432. In such examples difference between the first shutoff trigger 432 and the second shutoff trigger 434 may allow for determining whether closure of either (or both) the first isolation valve 402 and the second isolation valve 408 is successful once fluid flow of the fluid 24 (shown in
With reference to
When the flow rate of the fluid is less than the shutoff trigger of the flow switch, the fluid is flowed to the outlet conduit of the flow control arrangement to the semiconductor processing system, as shown with box 530, arrow 532, box 534. When the flow rate of the fluid is greater than the shutoff trigger, the outlet conduit is fluidly separated from the inlet conduit by closing an isolation valve coupling the flow switch to the inlet conduit, e.g., the isolation valve 102 (shown in
Vent flows and inert/diluent fluid flows may be provided to semiconductor processing system to limit (or eliminate) risk associated with fluid flows containing HPMs provided to the semiconductor processing system. Such fluid flows may be sized to correspond to the highest flow rate of the fluid to the semiconductor processing system that may be expected during operation of the semiconductor processing system, such as the flow rating of a flow control device fluidly coupling the fluid source to the semiconductor processing system, the vent flow and/or the inert/diluent fluid flow thereby ensuring limiting (or eliminating) hazards associated with the fluid. Cost associated with the provision of such vent flows and inert/diluent fluids corresponds with the flow rate of the vent flow and the inert/diluent fluid flow, greater flow rates associated with greater cost.
In certain examples of the present disclosure a flow control arrangement is provided including a flow switch and an isolation valve. The flow switch has a shutoff trigger and is operatively connected to the isolation valve to close the isolation valve when flow rate of a fluid containing a hazardous material (e.g., an HPM) rises above the shutoff trigger of the flow switch. Advantageously, the flow switch may improve safety of the semiconductor processing system for example, by reducing (or eliminating) probability that the semiconductor processing system receive the fluid at a flow rating corresponding to the flow rating of the flow control device, like in the unlikely situation that the flow control fail in a fully open position. For example, flow control arrangements described herein may have SIL rating of 1, 2, 3 or event 4—though flow control arrangements described herein may be unrated and remain within the scope of the current disclosure. To further advantage, flow rate of a vent flow and/or an inert/diluent fluid flow provided to the semiconductor processing system may be sized to correspond to the shutoff trigger of the flow switch, and not the flow rating of the flow control device, limiting cost of operating the semiconductor processing system.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and/or “including.” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, element components, and/or groups thereof. The term “about” is intended to include the degree of error associated with measurement of the particular quantity based upon the equipment available at the time of filing the application.
While the present disclosure has been described with reference to an exemplary embodiment or embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the present disclosure. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the present disclosure without departing from the essential scope thereof. Therefore, it is intended that the present disclosure not be limited to the particular embodiment disclosed as the best mode contemplated for carrying out this present disclosure, but that the present disclosure will include all embodiments falling within the scope of the claims.
This application claims the benefit of U.S. Provisional Application 63/389,790 filed on Jul. 15, 2022, the entire contents of which are incorporated herein by reference.
Number | Date | Country | |
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63389790 | Jul 2022 | US |