Claims
- 1. A method of forming a frontside contact on a silicon-on-insulator substrate, comprising in combination:
removing a top layer of silicon in an area where the frontside contact is to be formed, thereby substantially exposing a buried oxide layer; depositing a field oxide layer on the buried oxide layer; etching a hole through the field oxide layer and the buried oxide layer to a substrate layer; performing an implant in the substrate layer through the hole; depositing a connection polysilicon; etching the connection polysilicon; depositing a contact dielectric layer; and forming a contact plug.
- 2. The method of claim 1, further comprising forming a metal pad substantially above the contact plug.
- 3. The method of claim 1, further comprising depositing and etching at least one spacer to provide additional doping after the step of performing an implant.
- 4. The method of claim 3, wherein the at least one spacer is composed of borosilicate glass.
- 5. The method of claim 1, wherein the step of removing a top layer of silicon includes employing reactive ion etching.
- 6. The method of claim 1, wherein the step of etching a hole includes applying photoresist to substantially define the location to be etched.
- 7. The method of claim 1, wherein the step of etching a hole includes performing a straight wall etch.
- 8. The method of claim 1, wherein the step of performing an implant includes performing a P+ implant of substantially 1.25×1015 atoms/cm2 at 70 keV.
- 9. The method of claim 1, wherein the step of etching the connection polysilicon includes applying photoresist to substantially define a location to be etched.
- 10. The method of claim 1, wherein the step of forming a contact plug includes etching a contact hole in the contact dielectric layer.
- 11. The method of claim 1, wherein the step of forming a contact plug includes depositing a metal in the contact hole.
- 12. The method of claim 11, wherein the metal is tungsten.
- 13. The method of claim 11, wherein a silicide is substantially located between the metal and the connection polysilicon.
RELATED APPLICATION
[0001] This patent application is a divisional application of U.S. application Ser. No. 09/995,400 filed Nov. 27, 2001. U.S. application Ser. No. 09/995,400 is hereby incorporated by reference herein in its entirety, including the drawings.
Provisional Applications (1)
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Number |
Date |
Country |
|
60275764 |
Mar 2001 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09995400 |
Nov 2001 |
US |
Child |
10227744 |
Aug 2002 |
US |