Claims
- 1. A method of forming a dielectric layer on a substrate, comprising the steps of:
(a) providing a metallo-organic material in a solvent, which dissolves such metallo-organic material; (b) coating dissolved metallo-organic material onto the substrate to form a layer; and (c) heating the deposited layer in an oxygen environment to produce thermal decomposition of the organic component of the dissolved metallo-organic material and a reaction of the metallic portion of the material with oxygen thereby causing the layer to become dielectric.
- 2. A method of forming a dielectric layer on a substrate, comprising the steps of:
(a) providing a metallo-organic material in a solvent with a crystal modifying dopant, the solvent dissolving such metallo-organic material and dopant; (b) coating dissolved metallo-organic material onto the substrate to form a layer; and (c) heating the deposited layer in an oxygen environment to produce thermal decomposition of the organic component of the dissolved metallo-organic material and a reaction of the metallic portion of the material with oxygen to produce a crystalline phase with the amount of dopant controlling the crystallite size of such phase.
- 3. The method of claim 2 wherein the dopant includes another metallo-organic material.
- 4. A method of forming a dielectric layer on a substrate, comprising the steps of:
(a) providing a metallo-organic material including Zirconium 2-Ethylhexanoate, Zirconium Octoate or Zirconium Tetra-n-butoxide in a solvent, which dissolves such metallo-organic material; (b) coating dissolved metallo-organic material onto the substrate to form a layer; and (c) heating the deposited layer in an oxygen environment to produce thermal decomposition of the organic component of the dissolved metallo-organic material and a reaction of the metallic portion of the material with oxygen thereby producing a crystalline phase causing the layer to become dielectric, and wherein the amount of dopant controls the crystalline phase.
- 5. The method of claim 4 wherein the substrate is conductive.
- 6 The method of claim 5 wherein the substrate is rigid or flexible.
- 7. The method of claim 5 wherein the conductive substrate includes all metals and their alloys, conductive ceramics, conductive polymers, and conductive composites of metals, ceramics, organics, inorganics, or polymers.
- 8. The method of claim 4 wherein the dopant is yttria.
- 9. A method of forming a dielectric layer on a substrate, comprising the steps of:
(a) providing a metallo-organic material including Zirconium 2-Ethylhexanoate, Zirconium Octoate or Zirconium Tetra-n-butoxide, a dopant including Y-Acetylacetonate in a solvent, such solvent dissolving such metallo-organic material and the dopant; (b) coating dissolved metallo-organic material onto the substrate to form a layer; and (c) heating the deposited layer in an oxygen environment to produce thermal decomposition of the organic component of the dissolved metallo-organic material and a reaction of the metallic portion of the material with oxygen to produce crystalline tetragonal phase zirconia with the amount of Y-Acetylacetonate controlling the crystallite size of such tetragonal phase zirconia.
- 10. The method of claim 9 wherein the heating step includes raising the temperature of the deposited layer less than 630° C.
- 11. A method of forming a dielectric layer on a substrate, comprising the steps of:
(a) providing a metallo-organic material including Zirconium 2-Ethylhexanoate, Zirconium Octoate or Zirconium Tetra-n-butoxide, a dopant including Y-Acetylacetonate in a solvent, such solvent dissolving such metallo-organic material and the dopant; (b) coating dissolved metallo-organic material onto the substrate to form a layer; and (c) heating in a range of 300 to 630° C. the deposited layer in an oxygen environment to produce thermal decomposition of the organic component of the dissolved metallo-organic material and a reaction of the metallic portion of the material with oxygen to produce crystalline tetragonal phase zirconia with the amount of Y-Acetylacetonate controlling the crystallite size of such tetragonal phase zirconia.
- 12. The method of claim 11 wherein the substrate is aluminum or aluminum alloys and the temperature range is 500 to 630° C.
- 13. The method of claim 11 wherein the substrate is a polymer and the temperature range is 300 to 375° C.
- 14. The method of claim 13 wherein the polymer is a polyimide.
CROSS REFERENCE TO RELATED APPLICATION
[0001] Reference is made to commonly-assigned U.S. patent application Ser. No. ______ filed concurrently herewith, entitled “A Charge Containing Element” by Chatterjee et al, the disclosure of which is incorporated herein.