The invention relates to a new embodiment of a Free-Electron Laser (“FEL”).
The invention also relates to the use of such a Free-Electron Laser as an Extreme UltraViolet (“EUV”) light sources for Extreme UltraViolet lithography.
Background of Free-Electron Lasers (“FEL”) A Free-Electron laser (FEL), is a type of laser that use a relativistic electron beam that moves freely through a magnetic structure, in order to create a beam consisting of coherent electromagnetic radiation that can reach high power. In this type of laser, the free electron beam is the lasing medium. The free-electron laser has the widest frequency range of any laser type, and can be widely tunable, currently ranging in wavelength from microwaves, through terahertz radiation and infrared, to the visible spectrum, ultraviolet, and X-ray.
To create a Free-Electron Laser, a beam of electrons is accelerated to almost the speed of light. The beam passes through the Free-Electron Laser oscillator, a periodic transverse magnetic field produced by an arrangement of magnets with alternating poles within an optical cavity along the beam path. This array of magnets is commonly configured as an undulator, because it forces the electrons in the beam to follow a sinusoidal path. The acceleration of the electrons along this path results in the release of photons (synchrotron radiation). Since the electron motion is in phase with the field of the light already emitted, the fields add together coherently. The wavelength of the light emitted can be readily tuned by adjusting the energy of the electron beam or the magnetic field strength of the undulators.
A free-electron laser requires the use of an electron accelerator, which is very voluminous, requires a high voltage supply, has a very low repetition rate and is expensive.
Background of Extreme Ultraviolet (“EUV”) Light Sources
Extreme UltraViolet (“EUV”) with wavelengths below about 50 nm and more specifically around and below 13.5 nm can be used in microlithography processes to enhance the resolution of optical systems that are limited by the diffraction limit of light accompanying miniaturization of semiconductor integrated circuits. This technology called as extreme ultraviolet lithography (EUVL) is capable of providing resolution below 30 nm that had been impossible with conventional optical lithography that utilizes deep ultraviolet (DUV) light sources with wavelengths of 248 nm or 193 nm.
The current technologies for generating high power Extreme UltraViolet radiation at 13.5 nm, referred to as laser produced plasma (LPP), employs the deposition of laser energy into a source element, such as xenon (Xe), tin (Sn) or lithium (Li), creating ionized gas microplasma at electron temperatures of several tens of electron volts. As these highly excited ions decay, energetic radiation is emitted in all directions of 4π radians.
One particular laser produced plasma (LPP) technique involves irradiating molten tin droplets with one or more pre-pulse(s) followed by a main pulse. In this regard, CO2 lasers at the wavelength of 10.6 μm provide certain advantages as a drive laser producing main pulses in the laser produced plasma (LPP) process thanks to the ability to produce a relatively high conversion efficiency, i.e., the ratio of output Extreme UltraViolet in-band to drive laser input power.
For Extreme UltraViolet lithography, the 13.5 nm radiation is collected by a mirror (either grazing incidence or normal incidence) and focused to an intermediate focal point where it is relayed to the scanner optics and, ultimately, the wafer.
For example, one apparatus currently being developed with the goal of producing about 100 W at the intermediate location contemplates the use of a pulsed, focused 10-12 kW CO2 drive laser which is synchronized with a droplet generator to sequentially irradiate about 40 k-100 k tin droplets per second. For this purpose, there is a need to produce a stable stream of droplets at a relatively high repetition rate (e.g. 40-100 kHz or more) and deliver the droplets to an irradiation site with high accuracy and good repeatability in terms of timing and position, i.e., with very small jitter, over a relatively long period of time.
The current laser produced plasma (LPP) radiation sources have a serious obstacle on the way to a high volume manufacturing (HVM) source such as small efficiency of the radiation source, a limited set of discrete wavelengths and the mitigation of the plasma debris required for the protection of Extreme UltraViolet optics.
Background of Free Electron Laser Used as Extreme UltraViolet Light Sources
Free-Electron Laser based radiation sources have evident advantages in wavelength tunability, high efficiency and high output power, compared to current laser produced plasma (LPP) radiation sources. The problem of debris mitigation does not exist at all. There is no need to use a multilayer coated reflective collector, of which reflectivity is limited to about 70%, since the radiation is produced in the diffraction limited volume. Hence, there is no problem with the transport of radiation to the exposure system. Harnessing such advantages of Free-Electron Laser based Extreme UltraViolet radiation sources liberated from the debris mitigation and a mechanical targeting system such as a droplet generator, the Free-Electron Laser based Extreme UltraViolet radiation source may have an average output power of 0.5 kW at a repetition rate of at least 250 kHz for meeting the requirements of the light source at 13.5 nm for the next generation lithography.
A proposed Free-Electron Laser based Free-Electron Laser producing a kW-level average output power of Extreme UltraViolet radiation utilizes high-energy electron beams of the order of 1 GeV generated from a radio-frequency (RF)-based linear accelerator that comprises a high-brightness electron injector typically composed of a photocathode RF gun or thermionic high-voltage DC gun and several buncher cavities for producing electron bunches, a several-stage magnetic bunch compressor system comprising a sequence of RF structure and bending magnets for compressing a bunch length and increasing a peak beam current and a main linac composed of a series of room-temperature or superconducting RF cavities with the accelerating gradient of the order of 10 MV/m and a beam transport system including beam focusing and defocusing electro-quadrupole magnets, lastly followed by undulators with a total length of 30 m, providing alternating magnetic fields to force electrons on a sinusoidal trajectory so that all electrons in a electron bunch emit coherently due to the microbunching process, called as self-amplified spontaneous emission (SASE) Free-Electron Laser. The overall size of a RF linac-driven Free-Electron Laser-based Extreme UltraViolet light source may require a 250 m long facility for a linac-based light source or a 120 m long, 60 m wide area for a recirculator-based light source. The costs for construction and operation of such facility may turn out incredibly so large as to prevent the Free-Electron Laser-based Extreme UltraViolet light sources from industrial realization of the next generation lithography technology.
An exemplary aspect of the present disclosure relates to a Free Electron Laser source generating an electromagnetic beam presenting a wavelength, called Free Electron Laser wavelength, belonging to the range from 5 nm to 15 nm, said Free Electron Laser comprising:
Such a result can only be obtained because of the particular tuning technique implemented according to the present invention. Indeed, as detailed in the following section 6.5 the tuning of the components of said Free Electron Laser is optimised since at least one parameter of the fiber-based laser (e.g. the average fiber laser power, the required pulse duration, the match spot radius, the peak power, laser energy pulse, etc.), at least one parameter of the laser plasma accelerator (e.g. the electron beam energy, the plasma density, the accelerator length, etc.), and at least one parameter of the undulator (e.g. the Pierce Parameter, the saturation length, the total number of periods, etc.) are all tuned as a function of the Free Electron Laser wavelength, when the peak magnetic field and the period of the undulator have been previously set.
Thus, all the essential components of the Free Electron Laser are tuned in synergy as a function of a same parameter, which corresponds to the Free Electron Laser wavelength. Such a relation between all the major parameters of the FEL is not trivial and requires an inventive step.
Such a synergy between the components constituting said Free Electron Laser is neither disclose nor suggest by the prior art, which does not give any concrete solution for designing and implementing a Free Electron Laser whose wavelength belongs to the range from 5 nm to 15 nm.
Indeed, considering the disclosure of Wiggins S. M. and al. (“High Quality electron beams from a laser wakefield accelerator”, Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser science Conference (QELS), 2010 pages 1-2 XP031701440), only a classical Laser-Plasma Accelerators towards X-rays combined with a classical undulator are disclosed. Such elements are designed to create an ALPHA-XLWFA line, which could be used for a FEL operation. It has to be noted that such a document discloses only beam transport simulations to illustrate how an FEL laser operating in the VUV using current 100-150 Mev electron Beams can be implemented, and disclose only that a compact x-ray FEL should be possible by scaling the LWFA to the gigaelectronvolt range without disclosing any solution to achieve it. Thus, it can be noticed that no full and effective implementation of a FEL with a wavelength range from 5 nm to 15 nm is disclosed by Wiggins S. M, which underlines that, at the time of the publication of this document, proposing such an effective implementation is tricky and not trivial.
In addition, Wiggins S. M. does not disclose that at least one parameter of the laser plasma accelerator, and at least one parameter of the undulator, are obtained as a function of said Free Electron Laser wavelength.
Even if the one skilled in the art would replace the laser disclosed by Wiggins S. M. by the one disclosed by Tajima T (“ICAN: The next Laser Powerhouse”, Optics and Photonics news, & May 2013, pages 36-43 XP0055101291), he would not obtained a FEL according to the present invention.
Indeed, the laser disclosed by Tajima, which uses optical fibers (as the one according to the present invention), is not designed such that its major parameters depend all on the Free Electron Laser wavelength. Indeed, no FEL is disclosed by Tajima, who discloses only a use of such fiber-based laser to treat nuclear waste.
Thus the combination of the Alpha-XLWFA beam line of Wiggins S. M. on the one hand with the laser disclosed by Tajima on the other hand would not lead to an effective and usable FEL with a wavelength ranging from 5 nm to 15 nm, since the laser plasma accelerator and the undulator of Wiggins are tuned for delivering 70-150 Mev electron beams, independently from the laser disclosed by Tajima dedicated to treat nuclear waste.
Such a combination can not simply work since a laser able to deliver a gigaelectronvolt is not adapted to be combined with laser plasma accelerator and the undulator of Wiggins tuned for delivering 70-150 Mev. Indeed, combining these elements is a tricky issue and no solution about a workable combination is disclosed or suggested.
Thus, such combination of prior art documents can not lead to achieve a concrete and efficient implementation of a FEL with a wavelength ranging from 5 nm to 15 nm.
Thanks to the particular tuning in synergy of all the elements constituting the FEL according to the invention, concrete compact and efficient FELs are designed (see Table 1 and Table 2 in the following), which make them usable for industrial lithography. Thus, a great achievement is obtained regarding the prior art, which was aiming to obtain one day such an efficient FEL.
Furthermore, using this chirped pulse amplification technique (CPA), the fiber-based laser can emit pulses of very high energy.
Preferably, said laser plasma accelerator comprises:
Such a laser plasma accelerator is very efficient, with a very high repetition rate.
Preferably, said laser plasma accelerator comprise means for modifying the length of the said second gas cell.
The wavelength of the electromagnetic beam emitted by the Free Electron Laser source can then be tuned.
Preferably said beam separator system comprises a dipole magnet for bending electron beams and a beam dump.
It has to be noticed that as detailed later the permanent magnet dipole length required for deflecting depends on the electron beam energy Eb, which depends itself on the FEL wavelength as detailed is section 6.5.
Advantageously, said electromagnetic beam is a Extreme UltraViolet beam.
The Free Electron Laser according to this embodiment can provide a Extreme UltraViolet source usable for lithography application. Such a Extreme UltraViolet source is more compact and efficient, cheaper and having a higher repetition rate and a higher average power as the prior art Extreme UltraViolet sources.
According to a preferred embodiment, said Extreme UltraViolet beam wavelength is 13.5 nm.
According to an other possible embodiment, said Extreme UltraViolet beam wavelength is 6.7 nm.
The invention will become more fully understood from the following description of preferred but non-limiting embodiments thereof, described in connection with accompanying drawings, wherein:
With initial reference to
Fibre-Type Laser
In this drive laser system 1, a low-energy laser pulse 810 is produced by an oscillator 81. This pulse 810 is then stretched out in time, according to the chirped pulse amplification (CPA) technique, by a stretching device 82, comprising a pair of diffraction gratings 821 and 822, having the effect of offsetting in time the various spectral components of the original low-energy pulse 810. The stretched pulse 820 then has a lower peak power and a longer duration of the pulse 810.
This laser pulse 820 is then distributed in a plurality of amplifying fibres 831 forming a first amplifying stage 83 of the fibre-type laser amplifier. The various fibres are separated from one another so as to make it possible to cool them effectively. Each of the amplifying fibres 831 comprises a core made from doped material, and is optically pumped, so as to optically amplify the laser pulse flowing in the fibre. The pulse passing through each of these amplifying fibres 831 is then amplified, and is then itself distributed in a plurality of amplifying fibres 841 forming the second amplification stage 84 of the fibre-type laser amplifier. Once again, the pulse passing through each of these amplifying fibres 841 is amplified and is then itself distributed in a plurality of amplifying fibres 851 forming the third amplification stage 85 of the fibre-type laser amplifier. Thus, in each amplification stage, the pulse is amplified in a plurality of fibres independent of one another and then divided so that pulses of lower power are transmitted to each of the higher-level amplification fibres.
The third and last amplification stage 85 then comprises a very large number of amplifying fibres, for example around 106. Each of the amplifying fibres of this third stage is extended by a transmission fibre having a very low loss level. The transmission fibres are collected together in a cluster 86 so that the pulses emerging from each of the ends of these transmission fibres are emitted in parallel and juxtaposed. These pulses then form a single amplified global pulse 860.
This amplified global pulse 860 is compressed timewise by a compressor 87, located in the pulse compressor chamber 2. This compressor 87 comprises a pair of diffraction gratings 871 and 872, grouping together in time the various spectral components of the pulse. The pulse 3 emerging from this temporal compressor 17 then has a very high energy and very short duration.
Two Stages Gas Cell Plasma Accelerator with Ionization-Induced Injection
As shown in
As described below, in the injector of the gas cell 6, the said laser pulse 3 excites large-amplitude plasma wakefields, of which an accelerating electric field can trap plasma electrons exclusively out of the inner shell electrons and accelerate them owing to ionization-induced injection. A pre-accelerated electron beam 10 from the injector is further accelerated to the relativistic energy of the order of 1 GeV in the accelerator stage of the gas cell 6, where the laser pulse generates plasma wakefields of the order of 1 GV/cm. A transmitted laser light is directed through a mirror with a beam hole 8 to a recovery box 9 that includes diagnostics and absorbers of the transmitted laser pulses.
This plasma accelerator is particularly advantageous when it is combined with a fiber-based laser, a beam focusing system, an undulator and a beam separator system according to the invention. However, such a laser plasma accelerator comprising a first gas cell filled with mixed gas, and a second gas cell filled with pure helium gas can also be combined with an other type of laser, for producing relativistic electron beams.
Beam Focusing System, Undulator and Separation Chamber
The output electron beam 10 from the laser plasma accelerator chamber 4 is transported into an undulator 13 through a beam focusing system 12, installed in a radiation chamber 11. As described below, the electron beam 10 focused by quadrupole magnetic field of the beam focusing system 12 generates the resonantly amplified Extreme UltraViolet radiation 14 due to self-amplified spontaneous emission (SASE) mechanism when passing through the alternating dipole magnetic fields of the undulator 13 that force the electron bunch on a sinusoidal trajectory.
After passing through the undulator 13, the electron bunch is decelerated so strongly that it becomes non-resonant and could not contribute to the amplification of the Extreme UltraViolet radiation, i.e., the onset of saturation. The decelerated electron beam 10 is separated from the Extreme UltraViolet radiation 14 in the dipole magnetic field of the deflection magnet 16 and dumped to a beam dump 17, while the saturated Extreme UltraViolet radiation 14 is extracted from a beam separation chamber 15 and directed to a Extreme UltraViolet lithography scanner/stepper.
Two-Stage Gas Cell
The injector cell 21 is filled with a mixed gas, e.g., 98% He and 2% N2, fed through a gas feedthrough 20 from the gas flow control system 7. The accelerator cell 24 is filled with a pure gas, e.g. H2 or He, fed through a gas feedthrough 24 from the gas flow control system 7. A length of the accelerator stage is variably adjusted with a bellows structure 25 driven by a motorized actuator 26. Such an adjustment can permit to reuse easily the accelerator stage, using said motorized actuator 26, for different Free-Electron laser wavelengths ranging from 5 nm to 15 nm. The laser plasma accelerator chamber 4 is pump out by a vacuum pump system 27 to keep an inside pressure of 10−3-10−4 Pa.
Description of the Physical Process
As shown in the central part 100 of
Plasma electrons contained in the boundary 103 are blown out by radiation pressure (ponderomotive force) of the laser pulse 3 with the relativistic intensity a0 1 and form a narrow dense electron sheath surrounding a spherical ion column behind the laser pulse, often referred to as a bubble 105. Such charge separation generates a strong longitudinal electric field 110 of the order of 100 GV/m at a plasma electron density of 1018 cm−3, which is three orders of magnitude higher than an accelerating field of conventional RF accelerators. In the bubble 105, an electron undergoes a strong focusing force simultaneously. Hence, once electrons 10 are trapped into a bubble, they are efficiently accelerated up to high energy of the order of 1 GeV over a dephasing length of the order of 1 cm, where accelerated electrons outrun a proper accelerating phase.
The said inner shell electrons from ionized N6+ and N7+ are located near the bubble center on the propagation axis, where the wake potential is a maximum and the expelling ponderomotive force of the laser pulse is a minimum. Contrary to pre-ionized free electrons, whose trajectories move along a narrow sheath outside the bubble, the ionized electrons emitted from the inner shell move close to the bubble axis toward the back of the bubble where the wake potential is a minimum, and eventually trapped into the wakefield in condition that electrons gain a sufficient kinetic energy required for trapping, as shown in the electron trajectory 106, while the electron shown in the trajectory 107, ionized earlier and off-axis, slips over the potential well and is not trapped. This mechanism called as ionization-induced injection occurs at the intensity as low as the optical field ionization threshold for the inner shell electrons of impurity gas and significantly increases the trapped charge. As trapping occurs close to the bubble axis, amplitudes of the betatron oscillation after trapping decrease compared to the self-injection from the electron sheath. According to theoretical considerations on the ionization-induced injection, for trapping electrons ionized at the peak of the laser electric field, the minimum laser intensity is given by 1−γp−1≦0.64a02, where γp is the Lorentz factor defined as γp=(1−βp2)−1/2 and βp is the phase velocity of the plasma wave. For electrons to be trapped at or in front of the laser envelope, the intensity must be a0≧21.7 for γp=33. The 1D PIC simulations show that the maximum number of trapped electrons is saturated to be approximately Ne max˜5×106 μm−2 at the mixed gas length Lmix=1000λ0 for the plasma density ne=0.001nc (1.7×1018 cm−3) with the nitrogen concentration of αN=1%, and the laser parameters a0=2 and cτ0≈15λ0 due to the beam loading effects and initially trapped particle loss from the separatrix in the phase space, where λ0 is the laser wavelength and nc is the critical plasma density defined as nc=meωL2/4πe2=π/(reλL2)=1.115×1021 [cm−3]/(λL [μm])2. The number of trapped electrons scales as Ne [μm−2] 8×107αNkpLmix(ne/nc)1/2 for αNkpLmix≦2. The energy spread is also proportional to both the mixed gas length and the nitrogen concentration. According to the 2D-PIC simulation for a0=2, the energy spread of a trapped electron beam may scale as δE/E=0.02[%](Lmix/λL)(ne/1017 cm−3)−1/2, while the transverse normalized emittance is estimated to be εn0=0.5 [μm]a01/2(ne/1017 [cm−3])−1/2.
In the bubble (blowout) regime for a0≧2, since an electron-evacuated cavity shape is determined by balancing the Lorentz force of the ion sphere exerted on the electron sheath with the ponderomotive force of the laser pulse, the bubble radius RB is approximately given as kpRB≈2√{square root over (a0)}, where kp=(4πrene)1/2 is the plasma wavenumber evaluated with the unperturbed on-axis density ne, and the classical electron radius re=e2/mec2=2.818×10−13 cm with electron charge e, mass me and vacuum light velocity c. The accelerating field Ez is given by Ez/E0=(½)αkpRB, where E0=mcωp/e≈96 [GV/m](ne/1018 [cm−3])1/2 and α represents a factor taking into account the beam loading and the difference between the simulation and theoretical estimation. The maximum energy gain limited due to dephasing is given by
Δγmax=Wmax/mec2=(⅔)ακselfa0(nc/ne),
where κself=(a02/8){(1+a02/2)1/2−1−ln([(1+a02/2)1/2+1]/2)}−1 is a correction factor of the group velocity for a self-guided relativistic laser pulse, of which the relativistic factor related to the group velocity βg=vg/c is given by γg2=1/(1−βg2)≈κself(ωL2/ωp2)=κself(nc/ne)=κchγg02, where γg0=ωL/ωp is the relativistic factor for the linear group velocity for a02 1. The dephasing length Ldp for self-guided bubble regime is given by kpLd≈(⅔)kpRBγg2=(4/3)√{square root over (a0)}κself(nc/ne). The important parameters of a laser plasma accelerator for reaching a given energy Eb are summarized as follows:
The operating plasma density is determined by
The accelerator length is set to be equal to the dephasing length as
The pump depletion length due to pulse front erosion becomes
The pulse duration required for satisfying a dephasing length longer than a pump depletion length is
The matched spot radius is given by
The corresponding matched power is
The required laser pulse energy is given by UL=PLτL.
Assuming the beam loading efficiency ηb ≡1−Ez2/EM2 defined by the fraction of the plasma wave energy absorbed by particles of the bunch with the root mean square (r.m.s) radius τb, the beam-loaded field is given by Ez=√{square root over (1−ηb)}EM=αEM, where EM is an accelerating field without beam loading. Thus a loaded charge is calculated as
Using the plasma density ne, the loaded charge is given by
A field reduction factor α for accelerating a charge of electrons Qb up to an energy Eb is obtained from α2+Cα3/2−1=0, where C≡(Qb/55 pC)κself1/2(kp2τb2)−1(1 μm/λL)−1(Eb/200 MeV)−1/2.
Beam Focusing System
Beam transport and imaging from the laser plasma accelerator 6 to the undulator 13 is provided by a beam focusing system 12 with short focal length. The field gradient of the two dimensional Halbach-type permanent quadrupole magnet (PMQ) as shown in
As shown in
Undulator
For a Extreme UltraViolet light source based on Free-Electron Laser, a planar undulator comprising alternating dipole magnets 52 is used, e.g., a pure permanent magnet (PPM) undulator with Nd2Fe14B blocks 50 as shown in
As shown in
Beam Separator
As shown in
The Free-Electron Laser Device
As shown in
In self-amplified spontaneous emission (SASE) Free-Electron Laser process, coupling the electron bunch with a copropagating undulator radiation field induces the energy modulation of electrons that yields a current modulation of the bunch due to the dispersion of the undulator dipole fields, called microbunching. It means that the electrons are grouped into small bunches separated by a fixed distance that resonantly coincides with the wavelength of the radiation field. Consequently, the radiation field can be amplified coherently. When lacking an initial resonant radiation field, a seed may build up from spontaneous incoherent emission in the self-amplified spontaneous emission (SASE) process.
Design of Free-Electron Laser Based Extreme UltraViolet Light Source
A design of Free-Electron Laser based Extreme UltraViolet light source is made by the one-dimensional Free-Electron Laser theory as follows. The Free-Electron Laser amplication takes place in the undulator with the undulator period λu at the resonant wavelength given by
where γ=Eb/mec2 is the relativistic factor of the electron beam energy Eb, and Ku=0.934Bu [T]λu [cm]=γθe is the undulator parameter, which is related to the maximum electron deflection angle θe.
In the high-gain regime required for the operation of a self-amplified spontaneous emission (SASE) Free-Electron Laser, an important parameter is the Pierce parameter τFEL given by
where Ib is the beam current, IA=17 kA is the Alfven current, σb is the root mean square (r.m.s) transverse size of the electron bunch, and the coupling factor is Au=1 for a helical undulator and Au=J0(ξ)−J1(ξ) for a planar undulator, where ξ=Ku2/[4(1+Ku2/2)] and J0 and J1 are the Bessel functions of the first kind.
Another important dimensionless parameter is the longitudinal velocity spread Λ of the beam normalized by the Pierce parameter:
where σγ/γ is the relative root mean square (r.m.s.) energy spread, ε is the r.m.s. transverse emittance, β=σb2/ε is the beta function provided by the guiding field (undulator plus external focusing) and εn is the normalized emittance defined as εn≡γε assuming that a beta function is constant along the length of the undulator.
A e-folding gain length Lgain over which the power grows exponentially according to exp(2s/Lgain) is given by
In order to minimize the gain length, one needs a large Pierce parameter ρFEL and a normalized longitudinal velocity spread Λ sufficiently low compared to 1 that means a sufficiently small energy spread σγ/γ and ε. This expression applies to moderately small beam size σb such that the diffraction parameter B 1 where B is defined as
A saturation length Lsat required to saturate the amplification can be expressed as
where Pin and Psat are an input and a saturated power.
The input Pin and saturated power Psat are related to an electron beam power Pb according to
P
b
=γI
b
m
e
c
2
=I
b
E
b,
P
sat≅1.37ρFELPbexp(−0.82Λ2),
P
in≅3√{square root over (4π)}ρPEL2Pb[Nλ
where Nλ
A fiber laser driven Laser Plasma Accelerator (LPA) based Free-Electron Laser produced Extreme UltraViolet radiation source at λX=13.5 nm wavelength using the undulator with period λu=5 mm (Case A), 10 mm (Case B), 15 mm (Case C), 20 mm (Case D) and 25 mm (Case E), all cases of which have the gap-period ratio g/λu=0.2, e.g. g=1 mm (Case A), 2 mm (Case B), 3 mm (Case C), 4 mm (Case D) and 5 mm (Case E), respectively. A hybrid undulator comprising NdFeB materials with grade N52, e.g., VACODYM® 722HR, and ferromagnetic materials such as tempered Co—Fe alloys (vanadium permendur), e.g., VACOFLUX® 50, provide the peak magnetic field Bu [T]=3.694exp(−5.068×0.2+1.520×0.22)=1.425. The corresponding undulator parameter becomes Ku=0.1331λu [mm]=0.6655, 1.331, 1.9965, 2.662, 3.3275□ for λu [mm]=5, 10, 15, 20, 25□.
The electron beam energy Eb required for producing the Extreme UltraViolet radiation at the wavelength λX=13.5 nm is given by γ=192.45λu1/2(1+0.008858λu2)1/2, i.e., Eb [MeV]=98.45λu1/2(1+0.008858λu2)1/2. For Case A to E, γ=475.6, 835.7, 1290, 1834, 2460□ and Eb [MeV]=243, 427, 659, 937, 1257□.
The Laser Plasma Accelerator (LPA) can provide a high-peak current bunched beam, e.g., IA=50 kA for electron charge Qb=0.5 nC and bunch duration τb 10 fs. A fiber laser pulse with wavelength λL=1 μm after compression is focused on the entrance of gas cell at the normalized laser field a0=2 corresponding to the laser intensity I=5.5×1018 Wcm−2. Self-guided propagation of such laser pulse in the gas cell requires the group velocity correction factor κself=1.19 and the matched spot radius Rm≡kprm=3.2. The wakefield reduction factor α due to loaded charge Qb is calculated from α2+Cα3/2−1=0 for the electron beam radius kpσb=1, where the coefficients are C=9.0, 6.8, 5.5, 4.6, 4.0□ as α=0.223, 0.267, 0.302, 0.335, 0.364□, respectively, for Case A to E.
The important Laser Plasma Accelerator (LPA) parameters are provided as follows:
(1) The operating plasma density; ne[1017 cm−3]=8.3, 5.6, 4.2, 3.2, 2.6
(2) The accelerator length; Lacc [mm]=18, 32, 51, 74, 102
(3) The required pulse duration; τL [fs]=46, 56, 65, 73, 82
(4) The matched spot radius; rm [μm]=19, 23, 27, 30, 34
(5) The matched power; PL [TW]=29, 43, 59, 75, 93
(6) The required laser pulse energy; UL [J]=1.34, 2.40, 3.79, 5.52, 7.57
For the Free-Electron Laser operation, the coupling factor Au(ξ) are Au=0.9527, 0.8696, 0.8083, 0.7711, 0.7486 with ξ=0.09065, 0.2349, 0.3329, 0.3899, 0.4235 for Case A to E, respectively. The root mean square (r.m.s) transverse size of the electron bunch is set to σb=25 μm in the undulator and is usually much larger than the normalized transverse emittance εn of the order of 1 μm for the Laser Plasma Accelerator (LPA) produced electron beam. For the peak current Ib=50 kA with the number of electrons per wavelength Nλ
(1) The Pierce parameter; ρFEL [%]=1.117, 1.507, 1.597, 1.596, 1.572
(2) The longitudinal velocity spread; Λ≈1 for setting σγ/γ≈ρFEL
(3) The e-folding gain length; Lgain [mm]=41, 61, 86, 115, 146
(4) The saturated power; Psat [GW]≅0.6ρFELPb=82, 194, 317, 451, 596
(5) The input power; Pin [MW]=0.94, 3.03, 5.26, 7.48, 9.72
(6) The saturation length; Lsat [mm]=499, 721, 1016, 1355, 1723
(7) The total number of periods; Nu=100, 72, 68, 68, 69.
(8) The spectral bandwidth; ΔλX/λX [%]˜1/Nu≈1.0, 1.4, 1.5, 1.5, 1.5
(9) The r.m.s. radiation cone angle;
(10) The average power at the repetition frequency frep [MHz];
P
av [kW]˜PsatτXfrep=(0.82,1.94,3.17,4.51,5.96)×frep [MHz],
assuming the radiation duration τX=τb˜10 fs.
The repetition rate frep to be required for generating the average Extreme UltraViolet power of PEUV, =1 kW yields frep [MHz]≈PEUV/(PsatτX)=1.22, 0.515, 0.315, 0.223, 0.168. For the production of 1 kW Extreme UltraViolet radiation, the average fiber laser power yields PLav [MW]≈ULfrep=1.63, 1.24, 1.19, 1.22, 1.27
Consequently, the minimum average laser power takes place for Case C with the undulator period 15 mm. The average beam power yields Pbav [kW]=QbfrepEb≈148, 110, 104, 104, 105. The efficiency of the electron beam acceleration is ηlaser→beam [%]=Pbav/PLav≈9.1, 8.9, 8.7, 8.5, 8.3. The efficiency of the production of Extreme UltraViolet radiation yields ηlaser→EUV [%]=0.061, 0.081, 0.084, 0.082, 0.079
Said Laser Plasma Accelerator (LPA) and Free-Electron Laser parameters for Case A to E producing the Extreme UltraViolet radiation of 1 kW at 13.5 nm wavelength are summarized as shown in Table 1.
A fiber laser driven Laser Plasma Accelerator (LPA) based Free-Electron Laser produced Extreme UltraViolet radiation source at λX=6.7 nm wavelength using the undulator with period λu=5 mm (Case A), 10 mm (Case B), 15 mm (Case C), 20 mm (Case D) and 25 mm (Case E), all cases of which have the gap-period ratio g/λu=0.2, e.g. g=1 mm (Case A), 2 mm (Case B), 3 mm (Case C), 4 mm (Case D) and 5 mm (Case E), respectively. A hybrid undulator comprising NdFeB materials with grade N52, e.g., VACODYM® 722HR, and ferromagnetic materials such as tempered Co—Fe alloys (vanadium permendur), e.g., VACOFLUX® 50, provide the peak magnetic field Bu [T]=3.694exp(−5.068×0.2+1.520×0.22)=1.425. The corresponding undulator parameter becomes Ku=0.1331λu [mm]=0.6655, 1.331, 1.9965, 2.662, 3.3275 for λu [mm]=5, 10, 15, 20, 25.
The electron beam energy Eb required for producing the Extreme UltraViolet radiation at the wavelength λX=6.7 is given by γ=273.18λu1/2(1+0.008858λu2)1/2, i.e., Eb [MeV]=98.45λu1/2(1+0.008858λu2)1/2. For Case A to E, γ=675.1, 1186, 1830, 2604, 3492 and Eb [MeV]=345, 606, 935, 1331, 1784.
The Laser Plasma Accelerator (LPA) can provide a high-peak current bunched beam, e.g., IA=50 kA for electron charge Qb=0.5 nC and bunch duration τb 10 fs. A fiber laser pulse with wavelength λL=1 μm after compression is focused on the entrance of gas cell at the normalized laser field a0=2 corresponding to the laser intensity I=5.5×1018 Wcm−2. Self-guided propagation of such laser pulse in the gas cell requires the group velocity correction factor κself=1.19 and the matched spot radius Rm≡kprm=3.2. The wakefield reduction factor α due to loaded charge Qb is calculated from α2+Cα3/2−1=0 for the electron beam radius kpσb=1, where the coefficients are C=7.55, 5.70, 4.59, 3.84, 3.32 as a=0.249, 0.295, 0.335, 0.369, 0.400, respectively, for Case A to E.
The important Laser Plasma Accelerator (LPA) parameters are provided as follows:
(1) The operating plasma density; ne[1017 cm−3]=6.5, 4.4, 3.2, 2.5, 2.0
(2) The accelerator length; Lacc [mm]=26, 47, 74, 109, 150
(3) The required pulse duration; τL [fs]=52, 63, 73, 83, 93
(4) The matched spot radius; rm [μm]=21, 26, 30, 34, 38
(5) The matched power; PL [TW]=37, 55, 75, 97, 120
(6) The required laser pulse energy; UL [J]=1.92, 3.47, 5.51, 8.06, 11.1
For the FEL operation, the coupling factor Au(ξ) are Au=0.9527, 0.8696, 0.8083, 0.7711, 0.7486 with ξ=0.09065, 0.2349, 0.3329, 0.3899, 0.4235 for Case A to E, respectively. The root mean square (r.m.s) transverse size of the electron bunch is set to σb=25 μm in the undulator and is usually much larger than the normalized transverse emittance εn of the order of 1 μm for the Laser Plasma Accelerator (LPA) produced electron beam. For the peak current Ib=50 kA with the number of electrons per wavelength Nλ
(1) The Pierce parameter; ρFEL [%]=0.787, 1.061, 1.125, 1.125, 1.107
(2) The longitudinal velocity spread; Λ=1 for setting σγ/γ=ρFEL
(3) The e-folding gain length; Lgain [mm]=58.4, 86.6, 123, 163, 207
(4) The saturated power; Psat [GW]=0.6ρFELPb=82, 194, 317, 451, 596
(5) The input power; Pin [MW]=0.94, 3.05, 5.3, 7.5, 9.8
(6) The saturation length; Lsat [mm]=709, 1024, 1441, 1923, 2445
(7) The total number of periods; Nu=142, 102, 96, 96, 98.
(8) The spectral bandwidth; ΔλX/λX [%]˜1/Nu≃0.71, 0.98, 1.04, 1.04, 1.02
(9) The r.m.s. radiation cone angle; θrms [μrad]=69, 57, 48, 42, 37
(10) The average power at the repetition frequency frep [MHz];
P
av [kW]−PsatτXfrep=(0.82,1.94,3.17,4.51,5.96)×frep [MHz],
assuming the radiation duration τX≈τb−10 fs. The repetition rate frep to be required for generating the average EUV power of PEUV=1.5 kW yields frep [MHz]≈PEUV/(PsatτX)=1.83, 0.773, 0.473, 0.332, 0.252. For the production of 1.5 kW EUV radiation, the average fiber laser power yields PLav [MW]≈ULfrep=3.52, 2.68, 2.60, 2.68, 2.80
Consequently, the minimum average laser power takes place for Case C with the undulator period 15 mm. The average beam power yields Pbav [kW]=Qb frepEb≈316, 234, 221, 221, 225. The efficiency of the electron beam acceleration is ηlaser→beam [%]=Pbav/PLav=8.97, 8.73, 8.49, 8.26, 8.03. The efficiency of the production of Extreme UltraViolet radiation yields ηlaser→EUV [%]=0.043, 0.056, 0.058, 0.056, 0.054.
Said Laser Plasma Accelerator (LPA) and Free-Electron Laser parameters for Case A to E producing the Extreme UltraViolet radiation of 1 kW at 6.7 nm wavelength are summarized as shown in Table 2.
The FEL amplification takes place in the undulator with the undulator period λu at the resonant wavelength given by
where γ=Eb/mec2 is the relativistic factor of the electron beam energy Eb, Ku=0.934Bu [T]λu [cm]. Setting the peak magnetic field of the undulator to be Bu=1.425 T, the corresponding undulator parameter becomes Ku=0.1331λu [mm]=1.9965 for λu=15 mm (CASE C). The electron beam energy Eb required for producing the EUV radiation at the wavelength λX is given by
The important Laser Plasma Accelerator (LPA) parameters are provided as a function of FEL wavelength λX:
(1) The operating plasma density;
(2) The accelerator length;
(3) The required pulse duration;
(4) The matched spot radius;
(5) The required laser peak power;
(6) The required laser pulse energy;
The important Free-Electron Laser parameters are all given as a function of FEL wavelength λX:
(1) The Pierce parameter;
(2) The longitudinal velocity spread; Λ=1 for setting σγ/γ≈ρFEL
(3) The e-folding gain length;
(4) The saturated power; Psat=317 [GW]
(5) The input power; Pin≈5.3 [MW]
(6) The saturation length;
(7) The total number of periods;
(8) The spectral bandwidth; ΔλX/λX 1/Nu≈1.5[%]
(9) The r.m.s. radiation cone angle;
(10) The average power at the repetition frequency frep [MHz];
P
av
P
satτXfrep=3.17 [kW]frep
for the radiation duration τX≈τb˜10 fs.
(11) The repetition rate frep to be required for generating the average Extreme UltraViolet power of PEUV=1 kW;
f
rep
≈P
EUV/(PsatτX)=0.315 [MHz]
(12) The average fiber laser power for the production of 1 kW Extreme UltraViolet radiation;
(13) The average electron beam power;
(14) The efficiency of the electron beam acceleration;
(15) The efficiency of the production of Extreme UltraViolet radiation;
For undulator period λu=15 mm, the average Extreme UltraViolet power of PEUV=1 kW, the electron beam energy Eb, the operating plasma density ne, the accelerator length Lacc, the required laser peak power PL, the required laser pulse energy UL, the Pierce parameter ρFEL, the saturation length Lsat, the average fiber laser power PLav and the efficiency of the production of Extreme UltraViolet radiation ηeff are shown as a function of the radiation wavelength λX for the range from 5 nm to 15 nm in
Other examples have been given respectively in table 1 and 2 of section 6.4 for other cases A, B, D, E, F related to other examples of ondulator period with Bu=1.425 T).
An exemplary embodiment of the present disclosure provides a new embodiment of a Free Electron Laser, which is more compact and efficient, cheaper and has a higher repetition rate and a higher average power than the prior art Free Electron Lasers.
An exemplary embodiment provides an efficient Free-Electron Laser-based Extreme UltraViolet light source, usable for industrial lithography technology.
Although the present disclosure has been described with reference to one or more examples, workers skilled in the art will recognize that changes may be made in form and detail without departing from the scope of the disclosure and/or the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
13306235.6 | Sep 2013 | EP | regional |
This application is a Section 371 National Stage Application of International Application No. PCT/EP2014/069222, filed Sep. 9, 2014, the content of which is incorporated herein by reference in its entirety, and published as WO 2015/032995 on Mar. 12, 2014, in English.
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/EP2014/069222 | 9/9/2014 | WO | 00 |