Claims
- 1. A method of manufacturing a functional device in which a functional layer is provided on a substrate, comprising the steps of:forming a low-temperature softening layer having a softening temperature lower than that of a substrate on the substrate; forming a heat-resistant layer which is a single layer or constructed by a plurality of layers on the low-temperature softening layer; and forming the functional layer on the heat-resistant layer.
- 2. A method of manufacturing a functional device according to claim 1, further comprisinga step of forming other heat-resistant layer, different from the heat-resistant layer, which is a single layer or constructed by a plurality of layers on the substrate before the low-temperature softening layer is formed.
- 3. A method of manufacturing a functional device according to claim 1, further comprisinga step of forming a metal layer which is a single layer or constructed by a plurality of layers on the low-temperature softening layer before the heat-resistant layer is formed.
- 4. A method of manufacturing a functional device according to claim 1, wherein the step of forming the functional layer includes the steps of:forming a precursor layer of the functional layer on the heat-resistant layer; and forming a functional layer by irradiating the precursor layer with an energy beam.
- 5. A method of manufacturing a functional device according to claim 4, wherein the precursor layer is crystallized by being irradiated with an energy beam.
- 6. A method of manufacturing a functional device according to claim 4, wherein a laser beam is used as an energy beam.
- 7. A method of manufacturing a functional device according to claim 6, wherein a laser beam of a short wavelength having an energy density of 80 mJ/cm2 or higher is applied.
- 8. A method of manufacturing a functional device according to claim 1, further comprising a step of forming an electrode for the functional layer between the heat-resistant layer and the functional layer.
- 9. A method of manufacturing a functional device in which a functional layer is provided on a substrate, comprising the steps of:forming a warp suppression layer for suppressing a warp in the substrate on the back side of the substrate; forming a low-temperature softening layer having a softening temperature lower than that of the substrate on the surface of the substrate; forming a heat-resistant layer which is a single layer or constructed by a plurality of layers on the low-temperature softening layer; and forming the functional layer on the heat-resistant layer.
- 10. A method of manufacturing a functional device according to claim 9, wherein a thermal displacement ratio in a range from a room temperature to 150° C. at the time when the warp suppression layer is formed on the back side of the substrate and the low-temperature softening layer and the heat-resistant layer are formed on the surface of the substrate is set to 5% or lower.
- 11. A method of manufacturing a functional device according to claim 9, wherein a thermal displacement ratio in a range from a room temperature to 150° C. at the time when the warp suppression layer is formed on the back side of the substrate, and the low-temperature softening layer, the heat-resistant layer, and the functional layer are formed on the surface of the substrate is set to 5% or lower.
- 12. A method of manufacturing a functional device according to claim 9, further comprising a step of forming a metal layer which is a single layer or constructed by a plurality of layers on the low-temperature softening layer before the heat-resistant layer is formed.
- 13. A method of manufacturing a functional device according to claim 9, wherein the step of forming the functional layer includes the steps of:forming a precursor layer of the functional layer on a heat-resistant layer; and forming the functional layer by irradiating the precursor layer with an energy beam.
- 14. A method of manufacturing a functional device according to claim 13, wherein the precursor layer is crystallized by being irradiated with an energy beam.
- 15. A method of manufacturing a functional device according to claim 13, wherein a laser beam is used as an energy beam.
- 16. A method of manufacturing a functional device according to claim 15, wherein a laser beam of a short wavelength having an energy density of 80 mJ/cm2 or higher is applied.
- 17. A method of manufacturing a functional device according to claim 9, further comprising a step of forming an electrode for the functional layer between the heat-resistant layer and the functional layer.
Priority Claims (2)
Number |
Date |
Country |
Kind |
P11-374560 |
Nov 1999 |
JP |
|
P2000-188478 |
May 2000 |
JP |
|
Parent Case Info
This application is a divisional application of U.S. application Ser. No. 09/889,603, filed Oct. 2, 2001, now is U.S. Pat. No. 6,570,223, which is a National Stage entry of PCT/JP00/08210 filed Nov. 21, 2000, which claims priority from Japanese Patent Application No. P11-374560 filed Nov. 22, 1999, the contents of which are herein incorporated by reference to the extent allowed by law.
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