Silicon, silicon germanium, germanium

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H01L21/02532

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02532Silicon, silicon germanium, germanium

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for making semiconductor device including a superlattice and...
- Patent number 12,322,594
- Issue date Jun 3, 2025
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,324,191
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor process, device, and method
- Patent number 12,322,657
- Issue date Jun 3, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin-film transistor and application as bit-line connector...
- Patent number 12,324,159
- Issue date Jun 3, 2025
- SUNRISE MEMORY CORPORATION
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Helium-free silicon formation
- Patent number 12,315,724
- Issue date May 27, 2025
- Applied Materials, Inc.
- Zeqiong Zhao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method
- Patent number 12,317,524
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate
- Patent number 12,315,721
- Issue date May 27, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for making semiconductor device with selective etching of su...
- Patent number 12,315,723
- Issue date May 27, 2025
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of highly selective silicon oxide removal
- Patent number 12,315,736
- Issue date May 27, 2025
- Applied Materials, Inc.
- Lala Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with low leakage current and methods of fabri...
- Patent number 12,317,578
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step-stacked nanowire CMOS structure for low power logic device and...
- Patent number 12,317,588
- Issue date May 27, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate structure including semiconductor material...
- Patent number 12,315,738
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for processing semiconductor wafers having a polycrystallin...
- Patent number 12,308,247
- Issue date May 20, 2025
- GlobalWafers Co., Ltd.
- Alexis Grabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,308,369
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,308,371
- Issue date May 20, 2025
- NATIONAL TAIWAN UNIVERSITY
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth method for FDSOI hybrid region
- Patent number 12,308,232
- Issue date May 20, 2025
- Shanghai Huali Integrated Circuit Corporation
- Jiaqi Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,310,093
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Liang Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device
- Patent number 12,310,056
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,308,228
- Issue date May 20, 2025
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
3D semiconductor device and array layout with isolated conductive p...
- Patent number 12,310,023
- Issue date May 20, 2025
- Macronix International Co., Ltd.
- Hang-Ting Lue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including backside vias and methods of formin...
- Patent number 12,310,057
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based complementary metal-oxide-semiconductor devices wi...
- Patent number 12,310,094
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary MOS FETS vertically arranged and including multiple d...
- Patent number 12,300,550
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device with air gap spacer and fabrication methods thereof
- Patent number 12,300,720
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures exposed in airgaps for semiconductor devices
- Patent number 12,302,615
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including alternating semiconductor layers wit...
- Patent number 12,302,609
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulations to selectively etch silicon-germanium relative to silicon
- Patent number 12,300,498
- Issue date May 13, 2025
- Entegris, Inc.
- Steven M. Bilodeau
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor wafer with devices having different top layer thickne...
- Patent number 12,302,637
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon-on-insulator substrate comprising an isola...
- Patent number 12,300,535
- Issue date May 13, 2025
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...
- Publication number 20250174457
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Lutz Muehlenbein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nano-FET Transistor with Alternating Nanostructures and Method of F...
- Publication number 20250176204
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-En Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250169132
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20250169135
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTHS
- Publication number 20250169157
- Publication date May 22, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...
- Publication number 20250163606
- Publication date May 22, 2025
- Mach Corporation Co., Ltd.
- Goubun AKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors with Recessed Silicon Cap and Method Forming Same
- Publication number 20250169170
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OBTAINING NANOSCALE LINE BY USING LASER
- Publication number 20250157816
- Publication date May 15, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Jinbiao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING PARTITIONED SOURCE OR DRAIN CO...
- Publication number 20250159927
- Publication date May 15, 2025
- Intel Corporation
- Mauro J. KOBRINSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTALLINE SILICON STACK FORMATION AND BONDING TO A CMOS WAFER
- Publication number 20250157853
- Publication date May 15, 2025
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250151521
- Publication date May 8, 2025
- SAMSUNG DISPLAY CO., LTD.
- Keun Woo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250149332
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Publication number 20250151318
- Publication date May 8, 2025
- Intel Corporation
- Ritesh K. DAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF
- Publication number 20250151305
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250151409
- Publication date May 8, 2025
- InnoLux Corporation
- Kuan-feng LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20250149333
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAV...
- Publication number 20250142851
- Publication date May 1, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jerald Rock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED EPITAXIAL STACK AND METHODS FOR PREPARING THE SAME
- Publication number 20250142911
- Publication date May 1, 2025
- Applied Materials, Inc.
- Arvind KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Assemblies Having Conductive Structures Along Pillars of Semiconduc...
- Publication number 20250142875
- Publication date May 1, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...
- Publication number 20250142938
- Publication date May 1, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER WAFER DEBONDING PROCESS AND METHOD
- Publication number 20250132150
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERING EPI STACKS FOR EXTREME WAFER THINNING
- Publication number 20250132163
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Raghuveer Satya MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250132152
- Publication date Apr 24, 2025
- QROMIS,INC.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250132155
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250133771
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Syuan SIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250133777
- Publication date Apr 24, 2025
- NANYA TECHNOLOGY CORPORATION
- Yen-Wei YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20250133822
- Publication date Apr 24, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES
- Publication number 20250132154
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
SOURCE/DRAIN FEATURE SEPARATION STRUCTURE
- Publication number 20250133716
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS

Silicon, silicon germanium, germanium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for making semiconductor device including a superlattice and...

Transistor gate structures and methods of forming the same

Wide band gap semiconductor process, device, and method

Vertical thin-film transistor and application as bit-line connector...

Helium-free silicon formation

Semiconductor device and method

Polycrystalline ceramic substrate

Method for making semiconductor device with selective etching of su...

Methods of highly selective silicon oxide removal

Semiconductor devices with low leakage current and methods of fabri...

Step-stacked nanowire CMOS structure for low power logic device and...

Method of forming a gate structure including semiconductor material...

Methods for processing semiconductor wafers having a polycrystallin...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device and manufacturing method thereof

Epitaxial growth method for FDSOI hybrid region

Semiconductor device and manufacturing method thereof

Method of forming semiconductor device

Manufacturing method for semiconductor silicon wafer

3D semiconductor device and array layout with isolated conductive p...

Semiconductor devices including backside vias and methods of formin...

Nano-sheet-based complementary metal-oxide-semiconductor devices wi...

Complementary MOS FETS vertically arranged and including multiple d...

Multi-gate device with air gap spacer and fabrication methods thereof

Epitaxial structures exposed in airgaps for semiconductor devices

Method and apparatus for low temperature selective epitaxy in a dee...

Semiconductor device including alternating semiconductor layers wit...

Formulations to selectively etch silicon-germanium relative to silicon

Semiconductor wafer with devices having different top layer thickne...

High resistivity silicon-on-insulator substrate comprising an isola...

Patents Applicationslast 30 patents

METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER AND AS...

Nano-FET Transistor with Alternating Nanostructures and Method of F...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Semiconductor Device and Method of Forming the Same

STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTHS

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...

Transistors with Recessed Silicon Cap and Method Forming Same

METHOD OF OBTAINING NANOSCALE LINE BY USING LASER

INTEGRATED CIRCUIT STRUCTURES HAVING PARTITIONED SOURCE OR DRAIN CO...

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

SINGLE CRYSTALLINE SILICON STACK FORMATION AND BONDING TO A CMOS WAFER

LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS

MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF

ELECTRONIC DEVICE

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAV...

MULTI-LAYERED EPITAXIAL STACK AND METHODS FOR PREPARING THE SAME

Assemblies Having Conductive Structures Along Pillars of Semiconduc...

FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...

CARRIER WAFER DEBONDING PROCESS AND METHOD

ENGINEERING EPI STACKS FOR EXTREME WAFER THINNING

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES

SOURCE/DRAIN FEATURE SEPARATION STRUCTURE