Silicon, silicon germanium, germanium

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H01L21/02532

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02532Silicon, silicon germanium, germanium

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Single crystalline silicon stack formation and bonding to a cmos wafer
- Patent number 12,224,201
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing methods of the same
- Patent number 12,225,725
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- So Hyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate and method of manufacture
- Patent number 12,224,173
- Issue date Feb 11, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting display device and manufacturing method thereof
- Patent number 12,225,770
- Issue date Feb 11, 2025
- Samsung Display Co., Ltd.
- Keun Woo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,224,349
- Issue date Feb 11, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method of forming a semiconductor layer
- Patent number 12,224,175
- Issue date Feb 11, 2025
- Infineon Technologies AG
- Olaf Fiedler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of FinFET devices and methods of forming same
- Patent number 12,218,240
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device architectures with tensile and compressive strained substrates
- Patent number 12,218,201
- Issue date Feb 4, 2025
- National University of Singapore
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device, substrate processing...
- Patent number 12,217,959
- Issue date Feb 4, 2025
- Kokusai Electric Corporation
- Kimihiko Nakatani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-gate string drivers having shared pillar structure
- Patent number 12,219,772
- Issue date Feb 4, 2025
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device
- Patent number 12,213,315
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Byungjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench structure in which propagation o...
- Patent number 12,211,899
- Issue date Jan 28, 2025
- Korea Institute of Science and Technology
- Hyung-jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having oxide sub-fins
- Patent number 12,211,925
- Issue date Jan 28, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip manufacturing method
- Patent number 12,211,754
- Issue date Jan 28, 2025
- STMicroelectronics S.r.l.
- Pierpaolo Monge Roffarello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 12,205,955
- Issue date Jan 21, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multi-thickness nanowires
- Patent number 12,206,026
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Seung Hun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying the strain state of a block of a semiconductin...
- Patent number 12,198,940
- Issue date Jan 14, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Sylvain Maitrejean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon channel tempering
- Patent number 12,199,190
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having removed substrate
- Patent number 12,199,143
- Issue date Jan 14, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator structure for a front side type imager
- Patent number 12,198,975
- Issue date Jan 14, 2025
- Soitec
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Physical Quantity Sensor, Inertial Measurement Unit, And Method For...
- Publication number 20250052779
- Publication date Feb 13, 2025
- SEIKO EPSON CORPORATION
- Teruo TAKIZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046656
- Publication date Feb 6, 2025
- Socpra Sciences et Genie s.e.c.
- Thierno Mamoudou DIALLO
- C30 - CRYSTAL GROWTH
Information Patent Application
INTEGRATED EPITAXY AND PRECLEAN SYSTEM
- Publication number 20250046596
- Publication date Feb 6, 2025
- Applied Materials, Inc.
- Lara HAWRYLCHAK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
REFLECTORS, SEMICONDUCTOR PROCESSING SYSTEMS HAVING REFLECTORS, AND...
- Publication number 20250034714
- Publication date Jan 30, 2025
- ASM IP HOLDING B.V.
- Wentao Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20250040208
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...
- Publication number 20250037998
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED METAL LINES
- Publication number 20250038152
- Publication date Jan 30, 2025
- ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Stephen Morein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE
- Publication number 20250037997
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20250031446
- Publication date Jan 23, 2025
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Assemblies Having Conductive Structures Along Pillars of Semiconduc...
- Publication number 20250022955
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
Interfacial Layer for Anneal Capping Layer
- Publication number 20250006507
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Yi ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...
- Publication number 20250006579
- Publication date Jan 2, 2025
- Intel Corporation
- Avijit Barik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION PROCESSES ON SEMICONDUCTOR SUBSTRATES
- Publication number 20250006485
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Mark Saly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...
- Publication number 20250006790
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429316
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Jhe Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having FIN Structure and Method of Forming The...
- Publication number 20240429305
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Min YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
- Publication number 20240429048
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHOWERHEAD HEATED BY CIRCULAR ARRAY
- Publication number 20240408621
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Shashidhara Patel H B
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
HIGH PERFORMANCE FETS
- Publication number 20240413232
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240405022
- Publication date Dec 5, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...
- Publication number 20240404825
- Publication date Dec 5, 2024
- ASM IP HOLDING B.V.
- Ernesto Suarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240395874
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT
- Publication number 20240395938
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395867
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER
- Publication number 20240397694
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD
- Publication number 20240387677
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Silicon, silicon germanium, germanium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Single crystalline silicon stack formation and bonding to a cmos wafer

Semiconductor devices and manufacturing methods of the same

Polycrystalline ceramic substrate and method of manufacture

Light emitting display device and manufacturing method thereof

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Apparatus and method of forming a semiconductor layer

Source/drain regions of FinFET devices and methods of forming same

Engineered substrate structures for power and RF applications

Three-dimensional semiconductor device and method of fabricating th...

Device architectures with tensile and compressive strained substrates

Method of manufacturing semiconductor device, substrate processing...

Multi-gate string drivers having shared pillar structure

Hybrid channel semiconductor device and method

Three-dimensional semiconductor memory device

Gate-all-around transistor with strained channels

Semiconductor device having trench structure in which propagation o...

Semiconductor device having a doped fin well

Gate-all-around integrated circuit structures having oxide sub-fins

Semiconductor chip manufacturing method

Field effect transistors comprising a matrix of gate-all-around cha...

Semiconductor devices with threshold voltage modulation layer

Fins for metal oxide semiconductor device structures

Semiconductor device including multi-thickness nanowires

Method of manufacturing a multi-gate device having a semiconductor...

Gate line plug structures for advanced integrated circuit structure...

Method for modifying the strain state of a block of a semiconductin...

Silicon channel tempering

Gate-all-around integrated circuit structures having removed substrate

Plugs for interconnect lines for advanced integrated circuit struct...

Semiconductor on insulator structure for a front side type imager

Patents Applicationslast 30 patents

Physical Quantity Sensor, Inertial Measurement Unit, And Method For...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

INTEGRATED EPITAXY AND PRECLEAN SYSTEM

REFLECTORS, SEMICONDUCTOR PROCESSING SYSTEMS HAVING REFLECTORS, AND...

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...

EMBEDDED METAL LINES

EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

Assemblies Having Conductive Structures Along Pillars of Semiconduc...

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

Interfacial Layer for Anneal Capping Layer

MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...

SELECTIVE DEPOSITION PROCESSES ON SEMICONDUCTOR SUBSTRATES

TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...

SEMICONDUCTOR DEVICE

Semiconductor Device Having FIN Structure and Method of Forming The...

REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS

SHOWERHEAD HEATED BY CIRCULAR ARRAY

HIGH PERFORMANCE FETS

NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF

METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

BACKSIDE CONTACT

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

GATE STRUCTURE AND METHOD