Patent Grant
8770214
This application claims priority to Japanese Patent Application No. 2008-325417 filed on Dec. 22, 2008, the entire contents of which are incorporated herein by reference.
The present invention relates to a gas mixture supplying method and apparatus for use in, for example, a semiconductor manufacturing apparatus.
Conventionally, a gas mixture supplying apparatus for mixing and supplying gases, so-called a gas box or the like, is generally employed when a gas mixture including different kinds of gases is supplied as a processing gas into a region where the gas mixture is used such as a processing chamber of a semiconductor manufacturing apparatus, e.g., when an etching gas is supplied into a processing chamber of a plasma etching apparatus.
The gas mixture supplying apparatus is configured to mix and supply plural gases through a plurality of gas supply lines connected to one common pipeline (manifold) and then to supply the mixture of the gases into the region where the gas mixture is used through a gas mixture supply line via a gas outlet of the common pipeline. Further, conventionally, a gas having a highest flow rate or largest molecular weight is supplied from a gas supply line located closest to the gas outlet, whereas a gas having a lowest flow rate or smallest molecular weight is supplied from a gas supply line located farthest from the gas outlet (see, e.g., Japanese Patent Application Publication No. 1997-283504 and its corresponding U.S. Pat. No. 5,950,675).
However, the present inventors have conducted a research and found that when a higher-flow-rate gas and a lower-flow-rate gas were flowed together at the same time, the higher-flow-rate gas was filled up in the pipeline and impeded a flow of the lower-flow-rate gas, thus resulting in a great delay in arrival time of the lower-flow-rate gas at the processing chamber.
In view of the foregoing, the present invention provides a gas mixture supplying method and apparatus capable of supplying a preset gas mixture to a region where the gas mixture is used such as a processing chamber more quickly by suppressing a delay in arrival time of a lower-flow-rate gas at the processing chamber.
In accordance with an aspect of the present invention, there is provided a gas mixture supplying method, including: supplying plural kinds of gases through gas supply lines connected to a common pipeline; and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline to a region where the gas mixture is used through a gas mixture supply pipeline, wherein, when two or more gases having different flow rates are supplied simultaneously, a gas having a relatively low flow rate is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for a gas having a relatively high flow rate.
In accordance with another aspect of the present invention, there is provided a gas mixture supplying apparatus for supplying a gas mixture, including: a common pipeline having a gas outlet; gas supply lines connected to the common pipeline, for supplying plural kinds of gases; and a gas mixture supply pipeline for supplying the gas mixture of the plural kinds of gases through the gas outlet of the common pipeline to a region where the gas mixture is used, wherein, when two or more gases having different flow rates are supplied simultaneously, a gas having a relatively low flow rate is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for a gas having a relatively high flow rate.
In accordance with the present invention, there are provided a gas mixture supplying method and apparatus capable of supplying a preset gas mixture to a region where the gas mixture is used such as a processing chamber more quickly by suppressing a delay in arrival time of a relatively low flow-rate gas at the processing chamber.
The objects and features of the present invention will become apparent from the following description of embodiments, given in conjunction with the accompanying drawings, in which:
Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings which form a part hereof.
The other ends of the respective gas supply lines 1A to 1P are connected to non-illustrated gas supply sources. Further, the gas supply lines 1A to 1P are provided with gas flow rate controllers (MFC or FCS) 2A to 2P, valves 3A to 3P, valves 4A to 4P, and so forth, respectively.
Further, a gas outlet 11 at one end of the common pipeline (manifold) 10 is connected to a gas mixture supply pipeline 20, which is connected with a processing chamber 30 of a semiconductor manufacturing apparatus (e.g., plasma etching apparatus) which is a region where the gas mixture is used. A filter 21 for removing particles from the gas mixture, a valve 22, and so forth are provided in the gas mixture supply pipeline 20.
In the present embodiment, when two or more kinds of gases having different flow rates are supplied simultaneously, a gas having a relatively low flow rate is supplied from one of gas supply lines 1A to 1P, which is located closer to the gas outlet 11 than any other gas supply lines for supplying gases having relatively high flow rate. Further, among the plural kinds of gases, a gas having a lowest flow rate is supplied from the gas supply line 1A located closest to the gas outlet 11, while a gas having a highest flow rate is supplied from the gas supply line 1P located farthest from the gas outlet 11.
Further, the common pipeline (manifold) 10 is configured such that an inner diameter thereof is smaller (thinner) than an inner diameter of the gas mixture supply pipeline 20. In the present embodiment, the inner diameters of the common pipeline (manifold) 10 and the gas mixture supply pipeline 20 are set to be about 6.35 mm (¼ inch) and about 12.7 mm (½ inch), respectively. See, e.g.,
In comparison, in a conventional gas mixture supplying apparatus, a common pipeline (manifold) and a gas mixture supply pipeline is configured to have the same inner diameter. For example, their inner diameter is set to be, e.g., 12.7 mm (½ inch).
Now, a gas mixture supplying method using the above-described gas mixture supplying apparatus 100 will be discussed. As mentioned above, when two or more gases having different flow rates are supplied simultaneously, a gas having a relatively low flow rate is supplied from one of gas supply lines 1A to 1P, which is located closer to the gas outlet 11 than any other gas supply lines for supplying gases having relatively high flow rate in the present embodiment.
For example, assume that Ar gas and O2 gas are supplied simultaneously, and a gas mixture of the Ar gas and the O2 gas is supplied into the processing chamber 30. When a flow rate of the O2 gas is lower than that of the Ar gas, the O2 gas is supplied from one of the gas supply lines 1A to 1P located closer to the gas outlet 11 than a gas supply line from which the Ar gas is supplied.
Specifically, for example, the Ar gas is supplied from the gas supply line 1M located at the 13th position farther from the gas outlet 11, while the O2 gas is supplied from the gas supply line 1L located at the 12th position farther from the gas outlet 11. As an experiment (example 1) for testing such case, the Ar gas/O2 gas were actually flowed at flow rates of 500/20 sccm, 500/50 sccm, 1000/20 sccm, 1000/50 sccm, 1000/100 sccm, respectively, and the gases reaching the processing chamber 30 were analyzed by using a mass spectrometer (Q-MASS), and arrival times (times taken for the gases to reach the processing chamber 30 after their supply is begun) of the Ar gas and the O2 gas were investigated. The result is provided in Table 1.
Further, as a comparative example 1, arrival times of the Ar gas and the O2 gas were investigated for the case that the Ar gas was supplied from the gas supply line 1A located closest to the gas outlet 11, while the O2 gas was supplied from the gas supply line 1L located at the 12th position from the gas outlet 11. The result is also shown in Table 1.
As for the analysis result by the mass spectrometer (Q-MASS), a gas concentration distribution illustrated in
In Table 1, “t2−t1” means a time period until the O2 gas concentration begins to increase after the Ar gas concentration begins to increase and “t3−t1” indicates a time period until the O2 gas concentration is stabilized after the Ar gas concentration begins to increase, and results of “t2−t1” and “t3−t1” according to “example 1” and “comparative example 1” are provided, respectively.
As shown in Table 1, in the example 1, the time when the O2 gas concentration begins to increase was substantially the same as the time when the Ar gas concentration begins to increase, and the O2 gas concentration became stable in about 3.3 to 5.2 sec after the Ar gas concentration began to increase. In contrast, in the comparative example 1, the O2 gas concentration began to increase about 3.9 to 15.9 sec after the Ar gas concentration began to increase, and the O2 gas concentration became stable about 5.9 to 20.6 sec after the Ar gas concentration began to increase. As can be clearly seen from these results, both the arrival time of the O2 gas at the processing chamber 30 and the O2 gas stabilization time can be greatly reduced as compared to those of the comparative example 1.
In the comparative example 1, the reason for a greater delay in the arrival time of the O2 gas having a relatively low flow rate is deemed to be as follows.
As shown in
To shorten the arrival time of the gas mixture at the processing chamber 30, as described above, it may be also effective to reduce an internal volume of the common pipeline (manifold) 10. In such a case, by reducing an inner diameter of the common pipeline (manifold) 10, the arrival time of the gas mixture at the processing chamber 10 can be reduced. If, however, the internal diameter of the pipeline is reduced, conductance may be reduced, which in turn may cause a delay of the arrival time of the gas mixture at the processing chamber 30.
Therefore, it is preferable to make an inner diameter of the gas mixture supply pipeline 20 greater than the inner diameter of the common pipeline (manifold) 10. Further, the filter 21 provided on the gas mixture supply pipeline 20 preferably have a high conductance and a low pressure loss. As stated above, in the present embodiment, the inner diameter of the common pipeline (manifold) 10 is set to about 6.35 mm (¼ inch), and the inner diameter of the gas mixture supply pipeline 20 is set to about 12.7 mm (½ inch).
An arrival time of a gas having a relatively low flow rate depending on the inner diameter of the common pipeline (manifold) 10 was investigated, and the result is provided as follows. In this experiment, to investigate an effect of the difference in the inner diameter of the common pipeline in case that delay of arrival time is great, the Ar gas was supplied from the gas supply line 1B provided at the 2nd position from the gas outlet 11, and the O2 gas was supplied from the gas supply line 1P provided at the 16th position farthest from the gas outlet 11. Further, the Ar gas/O2 gas were actually flowed at flow rates of about 500/10 sccm, 500/20 sccm, 500/50 sccm, 500/70 sccm, 1000/10 sccm, 1000/20 sccm, 1000/50 sccm, 1000/70 sccm, and the gases reaching the processing chamber 30 were analyzed by using the mass spectrometer (Q-MASS), and times taken for the gases to reach the processing chamber 30 after their supply is begun (the Ar gas arrival time (t1) and the O2 gas arrival time (t2)) and the O2 gas stabilization time (t3) were investigated (see
As shown in Table 2, when the inner diameter of the common pipeline (manifold) was set to about 6.35 mm (¼ inch), both the arrival time of the O2 gas at the processing chamber 30 and the O2 gas stabilization time was be greatly reduced as compared to the case that the inner diameter of the common pipeline (manifold) 10 was set to about 12.7 mm (½ inch).
In addition, as an example method for increasing the conductance of the gas mixture supply pipeline 20 as described above, the filter 21 inserted in the gas mixture supply pipeline 20 was changed from a conventional filter (available at the market) to a low-pressure-loss filter having a gas-through surface area twice as large as that of the conventional filter, and the inner diameter of the common pipe line (manifold) 10 was set to be about 6.35 mm (¼ inch). In such a case, times taken for the gases to reach the processing chamber 30 after their supply is begun (the Ar gas arrival time (t1) and the O2 gas arrival time (t2)) and the O2 gas stabilization time (t3) were investigated in the same manner as described above. In this case, the results of “t2−t1” and “t3−t1” are also provided in Table 2.
As can be seen from Table 2, when the low-pressure-loss filter was used, both the O2 gas arrival time and the O2 gas stabilization time was reduced in the most of the flow rate range, as compared to the case that only the inner diameter of the common pipeline (manifold) 10 was reduced to 6.35 mm (¼ inch) without using the low-pressure-loss filter. Accordingly, the conductance of the gas mixture supply pipeline 20 is increased preferably by, for example, using a low-pressure-loss filter as the filter 21, enlarging the inner diameter of the gas mixture supply pipeline 20 or the like.
Moreover, the present invention is not limited to the above-described embodiment and examples but various changes and modifications can be made. For example, the processing chamber 30 is not limited to that of the plasma etching apparatus, but may be a processing chamber of a film forming apparatus such as a CVD (Chemical Vapor Deposition) apparatus. Furthermore, the number of the gas supply lines may be more than or less than 16 without being limited to 16.
While the invention has been shown and described with respect to the embodiment, it will be understood by those skilled in the art that various changes and modification may be made without departing from the scope of the invention as defined in the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2008-325417 | Dec 2008 | JP | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 4642279 | Tanigami et al. | Feb 1987 | A |
| 4846199 | Rose | Jul 1989 | A |
| 5950675 | Minami et al. | Sep 1999 | A |
| 6051072 | Harada | Apr 2000 | A |
| 6138586 | Reichart | Oct 2000 | A |
| 6418954 | Taylor et al. | Jul 2002 | B1 |
| 7174263 | Shajii et al. | Feb 2007 | B2 |
| 7204886 | Chen et al. | Apr 2007 | B2 |
| 7275558 | Abe | Oct 2007 | B2 |
| 20050120955 | Yamasaki et al. | Jun 2005 | A1 |
| 20060243207 | Jursich et al. | Nov 2006 | A1 |
| 20070287297 | Kikuchi et al. | Dec 2007 | A1 |
| 20090033140 | Pile et al. | Feb 2009 | A1 |
| 20090148244 | Snowdon | Jun 2009 | A1 |
| 20100206304 | Kim et al. | Aug 2010 | A1 |
| Number | Date | Country |
|---|---|---|
| 1650045 | Aug 2005 | CN |
| 9-283504 | Oct 1997 | JP |
| 2004-363522 | Dec 2004 | JP |
| 3745413 | Dec 2005 | JP |
| 2007-200918 | Aug 2007 | JP |
| Number | Date | Country | |
|---|---|---|---|
| 20100154908 A1 | Jun 2010 | US |
| Number | Date | Country | |
|---|---|---|---|
| 61159934 | Mar 2009 | US |
