The subject matter herein generally relates to displays, and more particularly to a gate driving circuit, a gate pulse modulation method, and a display device implementing the gate driving circuit and gate pulse modulation method.
A thin film transistor display, such as a thin film transistor liquid crystal display (TFT-LCD), utilizes many thin film transistors, in conjunction with other elements, arranged in a matrix as switches for driving liquid crystal molecules to generate images. In general, a driving method of a TFT-LCD device uses a gate pulse signal to drive each pixel transistor for controlling on-off states of each pixel. However, the increasing size of the TFT-LCD device renders it more vulnerable to flicker. Therefore, there is room for improvement within the art.
Implementations of the present technology will now be described, by way of example only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures, and components have not been described in detail so as not to obscure the related relevant feature being described. The drawings are not necessarily to scale and the proportions of certain parts may be exaggerated to better illustrate details and features. The description is not to be considered as limiting the scope of the embodiments described herein.
Several definitions that apply throughout this disclosure will now be presented.
The term “coupled” is defined as connected, whether directly or indirectly through intervening components, and is not necessarily limited to physical connections. The connection can be such that the objects are permanently connected or releasably connected. The term “comprising” means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in a so-described combination, group, series and the like.
Each of the plurality of gate drivers 122a, 122b, and 122c can comprise a discharge end DX, a gate pulse modulation circuit 20, a precharge switch 1221, and a second discharge circuit 1223. The precharge switch 1221 can be coupled between a gate turn-on voltage VGH and the discharge end DX. The second discharge circuit 1223 can be coupled between the discharge end DX and a gate turn-off voltage VGL. The second discharge circuit 1223 can comprise a discharge control switch S. When the gate driving circuit 120 performs a chamfering of the gate signal, the discharge control switch S is closed. In the illustrated embodiment, the discharge ends DX of the plurality of gate drivers 122a, 122b, and 122c are connected to each other through an electrically-conductive line. An equivalent resistance 124 is formed by the electrically-conductive line between two adjacent discharge ends DX of the plurality of gate drivers. When the gate driving circuit 120 performs a chamfering of the gate signal, a resistance value of the second discharge circuit 1223 must exceed a resistance value of the first discharge circuit 123. In the illustrated embodiment, the resistance value of the second discharge circuit 1223 may be 12 kiloohms (kΩ) or 19 kΩ and the resistance value of the first discharge circuit 123 may be 4 kΩ.
The logic controller 210 can comprise a power input terminal L, a discharge output terminal H, a first control signal input terminal IN1, a second control signal input terminal IN2, and a power signal output terminal VO. The power input terminal L is coupled to the gate turn-on voltage VGH. The discharge output terminal H is coupled to the gate turn-off voltage VGL through the discharge resistor Rex. The first control signal terminal IN1 can receive a clock signal CLK. The second control signal input terminal IN2 can receive an enable signal OE. The power signal output terminal VO can selectively output a gate voltage.
In the illustrated embodiment, the upper-bridge switch 220 is a P-metal oxide semiconductor (PMOS) transistor and the lower-bridge switch 230 is an N-metal oxide semiconductor (NMOS) transistor. A source of the upper-bridge switch 220 is coupled to the power signal output terminal VO. A drain of the upper-bridge switch 220 is coupled to a drain of the lower-bridge switch 230. A source of the lower-bridge switch 230 is grounded. A gate of the upper-bridge switch 220 and a gate of the lower-bridge switch 230 are coupled to the inverter 240. The node LX is between the drain of the upper-bridge switch 220 and the drain of the lower-bridge switch 230.
During a second period T2, the inverter 240 receives the turn-on control signal CT, and switches the upper-bridge switch 220 on and switches the lower-bridge switch 230 off. In the illustrated embodiment, it is the inverter 240 which switches the upper-bridge switch 220 on and switches the lower-bridge switch 230 off when the turn-on control signal CT is at logic-high. During the second period T2, the clock signal CLK and the enable signal OE are at logic-low. The logic controller 210 connects the power signal output terminal VO to the discharge output terminal H and disconnects the power input terminal L. Thus, the display panel 110 is discharged through the upper-bridge switch 220, the discharge output terminal H, and the discharge resistor Rex. The gate pulse modulation signal Gout has a chamfered falling edge in that period.
During a third period T3, the enable signal OE is at logic-high and the turn-on control signal CT is at logic-low. The inverter 240 receives the turn-on control signal CT, and switches the upper-bridge switch 220 off and switches the lower-bridge switch 230 on. Thus, the display panel 110 is discharged through the lower-bridge switch 230.
A method of separation of variables can analyze the first discharge circuit 123 and the second discharge circuit 1223. When the discharge control switch S of the second discharge circuit 1223 is opened, a resistance value of the discharge resistor Rex may be 4 kΩ. Thus, the plurality of gate drivers 122a, 122b, and 122c is discharged through the first discharge circuit 123. An equivalent resistance of the second discharge circuit 1223 is R1. An equivalent resistance of the first discharge circuit 123 is R2. The gate pulse modulation signals outputted by the gate drivers 122a, 122b, and 122c are G1, G2, and G3 respectively. A resistance value of the equivalent resistance 124 may be 160Ω. The calculated values are listed in Table 1.
When the discharge control switch S of the second discharge circuit 1223 is closed, the resistance of the discharge resistor Rex may be infinite. Thus, the plurality of gate drivers 122a, 122b, and 122c is discharged through the second discharge circuit 1223. The equivalent resistance of the second discharge circuit 1223 is R1. The equivalent resistance of the first discharge circuit 123 is R2. The gate pulse modulation signals outputted by the gate drivers 122a, 122b, and 122c are G1, G2, and G3 respectively. The resistance value of the equivalent resistance 124 may be 160Ω. The calculated values are listed in Table 2.
When the discharge control switch S of the second discharge circuit 1223 is closed, the resistance value of the discharge resistor Rex may be 4 kΩ. Thus, the plurality of gate drivers 122a, 122b, and 122c is discharged through the first discharge circuit 123 and the second discharge circuit 1223 simultaneously. The equivalent resistance of the second discharge circuit 1223 is R1. The equivalent resistance of the first discharge circuit 123 is R2. The gate pulse modulation signals outputted by the gate drivers 122a, 122b, and 122c are G1, G2, and G3 respectively. The resistance value of the equivalent resistance 124 may be 160Ω. The calculated values are listed in Table 3.
When the plurality of gate drivers 122a, 122b, and 122c is discharged through the first discharge circuit 123 and the second discharge circuit 1223 simultaneously, every two adjacent gate drivers 122a, 122b, and 122c has a reduced chamfered falling edge signal.
During a second period P2, the gate driving circuit 120 performs a chamfering of the gate signal when a control signal VGH_EN of the gate turn-on voltage VGH, a second discharge control signal GLO_N of the discharge control switch S, and the precharge control signal GLO_P change from a logic-low to a logic-high. Thus, the gate driving circuit 120 is discharged through the first discharge circuit 123 and the second discharge circuit 1223 simultaneously. In the illustrated embodiment, the second period P2 includes the second period T2.
During a third period P3, the first discharge control signal ERC_EN of the first discharge circuit 123 changes from logic-high to logic-low. Thus, the gate driving circuit 120 is discharged through the second discharge circuit 1223.
The gate driving circuit 120 performs the chamfering of the gate signal and is discharged through the first discharge circuit 123 and the second discharge circuit 1223 simultaneously, so that every two adjacent gate drivers 122a, 122b, and 122c has the reduced chamfered falling edge signal. Thus, image flicker can be effectively reduced.
The embodiments shown and described above are only examples. Even though numerous characteristics and advantages of the present technology have been set forth in the foregoing description, together with details of the structure and function of the present disclosure, the disclosure is illustrative only, and changes may be made in the detail, including in matters of shape, size, and arrangement of the parts within the principles of the present disclosure, up to and including the full extent established by the broad general meaning of the terms used in the claims.
Number | Date | Country | Kind |
---|---|---|---|
104131898 A | Sep 2015 | TW | national |
Number | Name | Date | Kind |
---|---|---|---|
8149025 | Huang | Apr 2012 | B2 |
8902203 | Hsu | Dec 2014 | B2 |
9078301 | Li | Jul 2015 | B2 |
9419603 | Choi | Aug 2016 | B2 |
9449711 | Chien | Sep 2016 | B2 |
9524691 | Li | Dec 2016 | B2 |
20110193833 | Hsu | Aug 2011 | A1 |
20110273226 | Huang | Nov 2011 | A1 |
20120169695 | Chang | Jul 2012 | A1 |
20130234626 | Li | Sep 2013 | A1 |
20140145923 | Chen | May 2014 | A1 |
20140219412 | Chien | Aug 2014 | A1 |
20140340291 | Wang | Nov 2014 | A1 |
20150280700 | Lai | Oct 2015 | A1 |
20150287377 | Li | Oct 2015 | A1 |
20170076657 | Lu | Mar 2017 | A1 |
20170092215 | Chang | Mar 2017 | A1 |
20170213514 | Xie | Jul 2017 | A1 |
Number | Date | Country |
---|---|---|
201123128 | Jul 2011 | TW |
201516995 | May 2015 | TW |
Number | Date | Country | |
---|---|---|---|
20170092215 A1 | Mar 2017 | US |