Claims
- 1. A multilayered wafer comprising:
a substrate; a semiconductor layer disposed on said substrate using a controlled cleaving process, said semiconductor layer having a top surface; and a gettering layer disposed within a region of said substrate and said semiconductor layer; wherein said gettering layer provides trapping sites for mobile impurity species.
- 2. The wafer of claim 1 wherein the semiconductor layer comprises monocrystalline silicon and the gettering layer comprises polycrystalline silicon.
- 3. The wafer of claim 1 wherein the gettering layer is selected from an implanted layer or a deposited layer.
- 4. The wafer of claim 1 wherein the semiconductor layer comprises germanium.
- 5. The wafer of claim 1 wherein the substrate comprises silicon.
- 6. The wafer of claim 1 wherein the gettering layer comprises microbubbles or implanted precipitates within the semiconductor layer.
- 7. The wafer of claim 6 wherein the microbubbles are formed by implanting gas-forming particles into the semiconductor layer.
- 8. The wafer of claim 7 wherein the gas-forming particles comprise hydrogen ions.
- 9. The wafer of claim 7 wherein the gas-forming particles are implanted into the semiconductor layer using a plasma immersion ion implantation technique.
- 10. The wafer of claim 1 wherein said region in said substrate is selected from said insulating layer, said substrate or said semiconductor layer.
- 11. The wafer of claim 10 wherein said controlled cleaving process includes implantation.
- 12. The wafer of claim 10 wherein said controlled cleaving process includes plasma immersion ion implantation.
- 13. A method for fabricating a substrate having a gettering layer, said method comprising:
providing a wafer comprising a film of semiconductor material from a donor substrate overlying an insulating layer, said insulating material being defined overlying a receptor substrate, said film of material being removed from said donor substrate using a controlled cleaving process; wherein said wafer comprises a gettering layer defined in a region near said insulating layer in said wafer, said region being selected from said insulating layer, said film of semiconductor material, or said receptor substrate.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority from the provisional patent application entitled GETTERING TECHNIQUE FOR WAFERS MADE USING A CONTROLLED CLEAVING PROCESS, filed Jul. 18, 1997 and assigned Application No. 60/059,980.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60059980 |
Jul 1997 |
US |
Continuations (2)
|
Number |
Date |
Country |
Parent |
09631891 |
Aug 2000 |
US |
Child |
10402356 |
Mar 2003 |
US |
Parent |
09025958 |
Feb 1998 |
US |
Child |
09631891 |
Aug 2000 |
US |