The invention described herein may be manufactured, used or licensed by and for the United States Government for governmental purposes without the payment to us of any royalty thereon.
Number | Name | Date | Kind |
---|---|---|---|
2341827 | Sukumlyn | Feb 1944 | |
2391595 | Richards et al. | Dec 1945 | |
2408529 | Osterberg | Oct 1946 | |
2410720 | Dimmick | Nov 1946 | |
2853402 | Blois | Sep 1958 | |
2925496 | Zoubek | Feb 1960 | |
4101302 | Krohn et al. | Jul 1978 | |
4230396 | Olshansky et al. | Oct 1980 | |
4310340 | Sarkar | Jan 1982 | |
4358181 | Gulati et al. | Nov 1982 | |
4359267 | Appel | Nov 1982 | |
4405207 | Kay | Sep 1983 | |
4406517 | Olshansky | Sep 1983 | |
4425146 | Izawa et al. | Jan 1984 | |
4455964 | Weber | Jun 1984 | |
4473273 | Hodge | Sep 1984 | |
4547210 | Schneider | Oct 1985 | |
4776868 | Trotter et al. | Oct 1988 | |
4814056 | Welty | Mar 1989 |
Number | Date | Country |
---|---|---|
0197505 | Dec 1982 | JPX |
4015964 | Jan 1986 | JPX |
Entry |
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IBM Technical Disclosure Bulletin, Lentz, vol. 5, No. 1, 6.1962, p. 21. |
R. A. Laudise, The Growth of Single Crystals, copyright 1970, by Prentice-Hall, Chapter 6, pp. 225-256. |
Goela et al., "Monolithic Material Fabrication by Chemical Vapour Deposition", Journal of Materials Science (1988), pp. 4331-4339. |