Claims
- 1. A Group III nitride compound semiconductor device comprising:a substrate made of aluminum gallium nitride satisfying the formula (AlxGa1−xN, 0<x<1), one or more Group III nitride compound semiconductor layers formed on a first surface of the substrate, a metal electrode formed on a second surface of said substrate, and a cladding layer comprising aluminum gallium nitride AlxGa1−xN (0<x<1).
- 2. A Group III nitride compound semiconductor device according to claim 1, wherein:composition ratio ‘x’ of said cladding layer AlxGa1−xN is equal or nearly equal to composition ratio ‘x’ of said substrate AlxGa1−xN.
- 3. A Group III nitride compound semiconductor device according to claim 2, wherein said cladding layer is stacked on the first surface of the substrate and has a thickness of 1-20 μm.
- 4. A Group III nitride compound semiconductor device according to claim 1, wherein among the Group III nitride compound semiconductor layers stacked on the first surface of the substrate, all layers having a thickness of more than 10 nm are independently formed of a compound represented by AlxGa1−xN, wherein 0≦x≦1.
- 5. A Group III nitride compound semiconductor device according to claim 1, wherein each of the Group III nitride compound semiconductor layers stacked on the first surface of the substrate is formed of a compound represented by AlxGa1−xN, wherein 0≦x≦1.
- 6. A Group III nitride compound semiconductor device according to claim 1, wherein said cladding layer is stacked on the first surface of the substrate and has a thickness of 1-20 μm.
- 7. A Group III nitride compound semiconductor device comprising:a substrate made of aluminum gallium nitride satisfying the formula (AlxGa1−xN, 0<x<1), one or more Group III nitride compound semiconductor layers formed on a first surface of the substrate, a metal electrode formed on a second surface of said substrate, and a first layer comprising AlxGa1−xN (0<x<1) stacked on the first surface of the substrate and having a thickness of 1-20 μm.
Priority Claims (1)
Number |
Date |
Country |
Kind |
H11-247248 |
Sep 1999 |
JP |
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Parent Case Info
This is a continuation Application of application Ser. No. 09/654,492 filed Sep. 1, 2000, the entire contents of which is hereby incorporated by reference.
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Continuations (1)
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Number |
Date |
Country |
Parent |
09/654492 |
Sep 2000 |
US |
Child |
10/187987 |
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US |