Substrates made of ternary or quaternary compounds

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/0211Substrates made of ternary or quaternary compounds

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Patents Grantslast 30 patents

Information Patent Grant
Nitride light emitter
- Patent number 11,322,908
- Issue date May 3, 2022
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Toru Takayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RAMO4 monocrystalline substrate
- Patent number 10,304,740
- Issue date May 28, 2019
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Shinsuke Komatsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
III-nitride light emitting device with a region including only tern...
- Patent number 10,304,997
- Issue date May 28, 2019
- Lumileds LLC
- Michael Jason Grundmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing organic polymer thin film laser
- Patent number 9,667,035
- Issue date May 30, 2017
- Beijing University of Technology
- Tianrui Zhai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Application-oriented nitride substrates for epitaxial growth of ele...
- Patent number 8,699,537
- Issue date Apr 15, 2014
- Tarun Kumar Sharma
- B82 - NANO-TECHNOLOGY
Information Patent Grant
ZnO-based semiconductor device
- Patent number 7,741,637
- Issue date Jun 22, 2010
- Rohm Co., Ltd.
- Ken Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 7,700,963
- Issue date Apr 20, 2010
- Sharp Kabushiki Kaisha
- Teruyoshi Takakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended wavelength strained layer lasers having nitrogen disposed...
- Patent number 7,627,014
- Issue date Dec 1, 2009
- JDS Uniphase Corporation
- Jack L. Jewell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor substrate
- Patent number 7,622,791
- Issue date Nov 24, 2009
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device and method for producin...
- Patent number 7,410,819
- Issue date Aug 12, 2008
- Sharp Kabushiki Kaisha
- Teruyoshi Takakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor substrate
- Patent number 7,276,779
- Issue date Oct 2, 2007
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended wavelength strained layer lasers having nitrogen disposed...
- Patent number 6,920,165
- Issue date Jul 19, 2005
- Picolight Incorporated
- Jack L. Jewell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device producing red wavelength optica...
- Patent number 6,829,271
- Issue date Dec 7, 2004
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor, method for fabricating semico...
- Patent number 6,777,253
- Issue date Aug 17, 2004
- Matsushita Electric Industrial Co., Ltd.
- Akihiko Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 6,738,405
- Issue date May 18, 2004
- The Furukawa Electric Co., Ltd.
- Takeharu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,639,258
- Issue date Oct 28, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Compound semiconductor structures for optoelectronic devices
- Patent number 6,566,688
- Issue date May 20, 2003
- Arizona Board of Regents
- Yong-Hang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,552,376
- Issue date Apr 22, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 6,546,031
- Issue date Apr 8, 2003
- Picolight Incorporated
- Jack L. Jewell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device producing red wavelength optica...
- Patent number 6,542,528
- Issue date Apr 1, 2003
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip and method for the production thereof
- Patent number 6,538,302
- Issue date Mar 25, 2003
- Osram Opto Semiconductors GmbH
- Karl-Heinz Schlereth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor laser device
- Patent number 6,522,676
- Issue date Feb 18, 2003
- Sanyo Electric Co., LTD
- Takenori Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical pickup and optical disk apparatus using the same
- Patent number 6,392,979
- Issue date May 21, 2002
- Matsushita Electric Industrial Co., Ltd.
- Kazuhisa Yamamoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 6,359,920
- Issue date Mar 19, 2002
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 5,960,018
- Issue date Sep 28, 1999
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength lasers having a restricted growth surface and g...
- Patent number 5,859,864
- Issue date Jan 12, 1999
- Picolight Incorporated
- Jack L. Jewell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser and method for fabricating the same
- Patent number 5,850,410
- Issue date Dec 15, 1998
- Fujitsu Limited
- Akito Kuramata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including T1 GaAs layer
- Patent number 5,841,156
- Issue date Nov 24, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Yasutomo Kajikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical semiconductor device provided with strained quantum well la...
- Patent number 5,841,152
- Issue date Nov 24, 1998
- Fujitsu Limited
- Hiroshi Ishikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 5,825,796
- Issue date Oct 20, 1998
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
QUANTUM CASCADE LASER AND METHOD FOR MANUFACTURING SAME
- Publication number 20210091540
- Publication date Mar 25, 2021
- KABUSHIKI KAISHA TOSHIBA
- Shinji SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing organic polymer thin film laser
- Publication number 20170149210
- Publication date May 25, 2017
- BEIJING UNIVERSITY OF TECHNOLOGY
- Tianrui Zhai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...
- Publication number 20170123150
- Publication date May 4, 2017
- International Business Machines Corporation
- Russell A. Budd
- G02 - OPTICS
Information Patent Application
INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...
- Publication number 20170123153
- Publication date May 4, 2017
- International Business Machines Corporation
- Russell A. Budd
- G02 - OPTICS
Information Patent Application
INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...
- Publication number 20170123151
- Publication date May 4, 2017
- International Business Machines Corporation
- Russell A. Budd
- G02 - OPTICS
Information Patent Application
INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...
- Publication number 20170123152
- Publication date May 4, 2017
- International Business Machines Corporation
- Russell A. Budd
- G02 - OPTICS
Information Patent Application
APPLICATION-ORIENTED NITRIDE SUBSTRATES FOR EPITAXIAL GROWTH OF ELE...
- Publication number 20110103421
- Publication date May 5, 2011
- TARUN KUMAR SHARMA
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN-BASED COMPOUND SEMICONDUCTOR DEVICE
- Publication number 20100109017
- Publication date May 6, 2010
- Samsung Electronics Co., Ltd.
- Sung-nam Lee
- B82 - NANO-TECHNOLOGY
Information Patent Application
ZnO-Based Semiconductor Device
- Publication number 20090200545
- Publication date Aug 13, 2009
- ROHM CO., LTD.
- Ken Nakahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor device and method for manufacturing the same
- Publication number 20090045393
- Publication date Feb 19, 2009
- ROHM CO., LTD.
- Ken Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor light-emitting device and method for producin...
- Publication number 20080283866
- Publication date Nov 20, 2008
- Teruyoshi Takakura
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-V group nitride system semiconductor substrate
- Publication number 20080001174
- Publication date Jan 3, 2008
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbon germanium (SiCGe) substrate for a group III nitride-...
- Publication number 20070023761
- Publication date Feb 1, 2007
- Virginia M. Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based compound semiconductor device
- Publication number 20060237709
- Publication date Oct 26, 2006
- Samsung Electronics Co., Ltd.
- Sung-nam Lee
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor light-emitting device and method for producin...
- Publication number 20060131590
- Publication date Jun 22, 2006
- Teruyoshi Takakura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Extended wavelength strained layer lasers having nitrogen disposed...
- Publication number 20050232323
- Publication date Oct 20, 2005
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-V group nitride system semiconductor substrate
- Publication number 20050023544
- Publication date Feb 3, 2005
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Extended wavelength strained layer lasers having nitrogen disposed...
- Publication number 20040017835
- Publication date Jan 29, 2004
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting semiconductor device producing red wavelength optica...
- Publication number 20030138015
- Publication date Jul 24, 2003
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride compound semiconductor device
- Publication number 20020167029
- Publication date Nov 14, 2002
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for fabricating semiconductor, method for fabricating semico...
- Publication number 20020079502
- Publication date Jun 27, 2002
- Akihiko Ishibashi
- B82 - NANO-TECHNOLOGY

Substrates made of ternary or quaternary compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride light emitter

RAMO4 monocrystalline substrate

III-nitride light emitting device with a region including only tern...

Method for preparing organic polymer thin film laser

Application-oriented nitride substrates for epitaxial growth of ele...

ZnO-based semiconductor device

Nitride semiconductor light-emitting device

Extended wavelength strained layer lasers having nitrogen disposed...

III-V group nitride system semiconductor substrate

Nitride semiconductor light-emitting device and method for producin...

III-V group nitride system semiconductor substrate

Extended wavelength strained layer lasers having nitrogen disposed...

Light-emitting semiconductor device producing red wavelength optica...

Method for fabricating semiconductor, method for fabricating semico...

Semiconductor laser

Group III nitride compound semiconductor device

Compound semiconductor structures for optoelectronic devices

Group III nitride compound semiconductor device

Extended wavelength strained layer lasers having strain compensated...

Light-emitting semiconductor device producing red wavelength optica...

Semiconductor chip and method for the production thereof

Nitride semiconductor laser device

Optical pickup and optical disk apparatus using the same

Extended wavelength strained layer lasers having strain compensated...

Extended wavelength strained layer lasers having strain compensated...

Extended wavelength lasers having a restricted growth surface and g...

Semiconductor laser and method for fabricating the same

Semiconductor device including T1 GaAs layer

Optical semiconductor device provided with strained quantum well la...

Extended wavelength strained layer lasers having strain compensated...

Patents Applicationslast 30 patents

QUANTUM CASCADE LASER AND METHOD FOR MANUFACTURING SAME

Method for preparing organic polymer thin film laser

INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...

INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...

INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...

INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI...

APPLICATION-ORIENTED NITRIDE SUBSTRATES FOR EPITAXIAL GROWTH OF ELE...

GaN-BASED COMPOUND SEMICONDUCTOR DEVICE

ZnO-Based Semiconductor Device

Nitride semiconductor device and method for manufacturing the same

Nitride semiconductor light-emitting device and method for producin...

III-V group nitride system semiconductor substrate

Silicon carbon germanium (SiCGe) substrate for a group III nitride-...

GaN-based compound semiconductor device

Nitride semiconductor light-emitting device and method for producin...

Extended wavelength strained layer lasers having nitrogen disposed...

III-V group nitride system semiconductor substrate

Extended wavelength strained layer lasers having nitrogen disposed...

Light-emitting semiconductor device producing red wavelength optica...

Group III nitride compound semiconductor device

Method for fabricating semiconductor, method for fabricating semico...