Claims
- 1. A growth method for growing a rod form of single oxide crystal from a melt in a vessel which is filled therein with a controlled atmosphere and in which a crucible is placed with a starting melt, wherein:
- a slit die is placed in said crucible to allow the melt to go up to the upper surface of the die through the slits, and
- the melt is seeded with a seed crystal while rotated, thereby growing a rod form of crystal having the same sectional shape as the shape of the upper surface of the die.
- 2. A growth method as recited in claim 1, wherein the single crystal of oxide is a single crystal of rutile.
- 3. A growth method as recited in claim 2, wherein the crystal growth occurs from the round upper surface of the die with the directional variation in diameter being up to 20% of the average diameter.
- 4. A growth method as recited in claim 2, wherein the range of the temperature distribution of the upper surface of the die is up to 10.degree. C.
- 5. A growth method as recited in claim 2, wherein the crystal growth is initiated by seeding the melt on the upper surface of the die with the seed crystal at a temperature of the upper surface of the die that is higher than that of the melt by 10.degree. C. or higher.
- 6. A growth method for growing a rod form of single oxide crystal having a circular cross-section 10 mm or more in diameter from a melt in a vessel which is filled therein with a controlled atmosphere and in which an iridium crucible is placed with a starting melt, consisting of:
- placing in a crucible an iridium slit die, having a circular cross-section whose directional variation in diameter is less than 20%, to allow the melt to go up to the upper surface of the die through the slits;
- seeding the melt with a seed crystal while rotated; and
- growing a rod form of crystal having substantially the same sectional shape as the shape of the upper surface of the die.
- 7. The method according to claim 6 wherein the rotational speed of the seed crystal is 5 rpm or less.
- 8. The method according to claim 6 wherein the single oxide crystal is a single crystal of rutile.
- 9. The method according to claim 6 wherein the range of the temperature distribution of the upper surface of the die is up to 10.degree. C.
- 10. The method according to claim 6 wherein the temperature of the upper surface of the die is kept higher than that of the melt by 5.degree. C. or higher.
- 11. The method according to claim 10 wherein the temperature of the upper surface of the die is kept higher than that of the melt by 10.degree. C. or higher.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-093740 |
Mar 1993 |
JPX |
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CROSS REFERENCE TO A RELATED APPLICATION
This application is a continuation-in-part of U.S. application Ser. No. 08/182,574, filed Jan. 18, 1994 by inventors Machida, et al., entitled RUTILE SINGLE CRYSTALS AND THEIR GROWTH PROCESS, which is a continuation of U.S. application Ser. No. 07/891,937, filed May 29, 1992 by inventors Machida, et al., entitled RUTILE SINGLE CRYSTALS AND THEIR GROWTH PROCESS, now abandoned.
US Referenced Citations (3)
Foreign Referenced Citations (2)
Number |
Date |
Country |
62-270500 |
Nov 1987 |
JPX |
3-12397 |
Jan 1991 |
JPX |
Non-Patent Literature Citations (1)
Entry |
"EFG, The Invention And Application To Sapphire Growth"; Labelle, Jr., J. Cryst. Growth 50 (1980) pp. 8-17. |
Continuations (1)
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Number |
Date |
Country |
Parent |
891937 |
May 1992 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
182574 |
Jan 1994 |
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