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C30B29/06

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

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Patents Grantslast 30 patents

Information Patent Grant
Quartz crucible and crystal puller
- Patent number 12,227,871
- Issue date Feb 18, 2025
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Peng Heng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fused quartz crucible for producing silicon crystals, and method fo...
- Patent number 12,227,870
- Issue date Feb 18, 2025
- Siltronic AG
- Toni Lehmann
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of Czochralski growth condition...
- Patent number 12,227,874
- Issue date Feb 18, 2025
- GlobalWafers Co., Ltd.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal pulling apparatus and single-crystal pulling method
- Patent number 12,227,872
- Issue date Feb 18, 2025
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline ceramic substrate and method of manufacture
- Patent number 12,224,173
- Issue date Feb 11, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for controlling a gas dopant vaporization rate...
- Patent number 12,221,718
- Issue date Feb 11, 2025
- GlobalWafers Co., Ltd.
- Chieh Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon material processing apparatus, silicon ingot production equ...
- Patent number 12,209,326
- Issue date Jan 28, 2025
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Fan Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Cleaning tools and methods for cleaning the pull cable of an ingot...
- Patent number 12,202,017
- Issue date Jan 21, 2025
- GlobalWafers Co., Ltd.
- Chin-Hung Ho
- B08 - CLEANING
Information Patent Grant
Ingot puller apparatus that use a solid-phase dopant
- Patent number 12,195,872
- Issue date Jan 14, 2025
- GlobalWafers Co., Ltd.
- William L. Luter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a substrate for an optical element
- Patent number 12,196,986
- Issue date Jan 14, 2025
- Carl Zeiss SMT GmbH
- Andreas Schmehl
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling systems having a cover member for covering the sili...
- Patent number 12,195,873
- Issue date Jan 14, 2025
- GlobalWafers Co., Ltd.
- Paolo Tosi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems and methods for controlling a gas dopant vaporization rate...
- Patent number 12,195,871
- Issue date Jan 14, 2025
- GlobalWafers Co., Ltd.
- Chieh Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon ingot single crystal
- Patent number 12,163,247
- Issue date Dec 10, 2024
- GlobalWafers Co., Ltd.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Inhibiting dripped granular dopant from adhering to a growing silic...
- Patent number 12,157,953
- Issue date Dec 3, 2024
- Sumco Corporation
- Norihito Fukatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling systems having a cover member for covering the sili...
- Patent number 12,157,954
- Issue date Dec 3, 2024
- GlobalWafers Co., Ltd.
- Paolo Tosi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of quartz plates during growth of single crystal silicon ingots
- Patent number 12,146,236
- Issue date Nov 19, 2024
- GlobalWafers Co., Ltd.
- Matteo Pannocchia
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth apparatus and method of producing epitaxial wafer
- Patent number 12,129,543
- Issue date Oct 29, 2024
- Sumco Corporation
- Haku Komori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of single-crystal silicon substrate
- Patent number 12,129,570
- Issue date Oct 29, 2024
- Disco Corporation
- Hayato Iga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Cylinder assembly for improving region of defect-free growth of cry...
- Patent number 12,116,693
- Issue date Oct 15, 2024
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Wenwu Yang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal
- Patent number 12,116,691
- Issue date Oct 15, 2024
- Sumco Corporation
- Yasufumi Kawakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and method for pulling a single crystal of semiconductor mat...
- Patent number 12,116,694
- Issue date Oct 15, 2024
- Siltronic AG
- Rolf Schmid
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming a single crystal silicon ingot with reduced cru...
- Patent number 12,110,609
- Issue date Oct 8, 2024
- GlobalWafers Co., Ltd.
- Richard Joseph Phillips
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method and device for producing a single crystal of silicon, which...
- Patent number 12,104,274
- Issue date Oct 1, 2024
- Siltronic AG
- Wolfgang Staudacher
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for characterizing defects in silicon crystal
- Patent number 12,092,588
- Issue date Sep 17, 2024
- ZING SEMICONDUCTOR CORPORATION
- Xing Wei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Determination of mass/time ratios for buffer members used during gr...
- Patent number 12,091,769
- Issue date Sep 17, 2024
- GlobalWafers Co., Ltd.
- Matteo Pannocchia
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...
- Publication number 20250051961
- Publication date Feb 13, 2025
- GlobalWafers Japan Co., Ltd.
- Takeshi SENDA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLES HAVING ANCHORS AND METHODS FOR PRODUCING AND USING SAME
- Publication number 20250051958
- Publication date Feb 13, 2025
- GLOBALWAFERS CO., LTD.
- Richard Joseph Phillips
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLES HAVING ANCHORS
- Publication number 20250051957
- Publication date Feb 13, 2025
- GLOBALWAFERS CO., LTD.
- Richard Joseph Phillips
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SINGLE CRYSTAL AND SINGLE CRYSTAL MANUFACTU...
- Publication number 20250043459
- Publication date Feb 6, 2025
- SUMCO CORPORATION
- Ippei SHIMOZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046656
- Publication date Feb 6, 2025
- Socpra Sciences et Genie s.e.c.
- Thierno Mamoudou DIALLO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON BAR RINSING DEVICE
- Publication number 20250033092
- Publication date Jan 30, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Yan SHI
- B08 - CLEANING
Information Patent Application
DEVICES AND METHODS FOR CLEANING A FINISHED MONOCRYSTALLINE SQUARE...
- Publication number 20250033093
- Publication date Jan 30, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Yiqiang GONG
- B08 - CLEANING
Information Patent Application
AUTOMATIC DECISION-MAKING FOR WELDING
- Publication number 20250034748
- Publication date Jan 30, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Yuefeng LI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUSPENDED LIFTING DEVICE FOR DIVERSION CYLINDER
- Publication number 20250019860
- Publication date Jan 16, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Mingyang GONG
- C30 - CRYSTAL GROWTH
Information Patent Application
MAGNET FOR SINGLE CRYSTAL PRODUCTION APPARATUS, SINGLE CRYSTAL PROD...
- Publication number 20250019863
- Publication date Jan 16, 2025
- SUMCO CORPORATION
- Atsuhiro YAMADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR
- Publication number 20250015144
- Publication date Jan 9, 2025
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Masaru HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
HALOGEN PLASMA ETCH-RESISTANT SILICON CRYSTALS
- Publication number 20240426020
- Publication date Dec 26, 2024
- Silfex, Inc.
- Jihong CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
- Publication number 20240429046
- Publication date Dec 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Toshiki MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED CRYSTAL LIFTING DEVICE AND SINGLE CRYSTAL FURNACE
- Publication number 20240410076
- Publication date Dec 12, 2024
- ZHEJIANG JINGSHENG M & E CO., LTD
- Jianwei CAO
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING A SINGLE CRYSTAL FROM SILICON
- Publication number 20240401233
- Publication date Dec 5, 2024
- Siltronic AG
- Walter HAECKL
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT PULLER APPARATUS HAVING DOPANT FEEDERS FOR ADDING A PLURALITY...
- Publication number 20240392466
- Publication date Nov 28, 2024
- GLOBALWAFERS CO., LTD.
- Chun-Sheng Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING SILICON SINGLE CRYSTAL ROD AND SINGLE CRYSTAL...
- Publication number 20240392469
- Publication date Nov 28, 2024
- Jinko Solar Co., Ltd.
- Xuejian WAN
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLE ASSEMBLIES AND METHODS FOR FORMING A UNITIZED CRUCIBLE ASS...
- Publication number 20240376632
- Publication date Nov 14, 2024
- GLOBALWAFERS CO., LTD.
- Richard Joseph Phillips
- B22 - CASTING POWDER METALLURGY
Information Patent Application
DOPED PARTICULATE SILICON PARTICLE SIZE SELECTION
- Publication number 20240368801
- Publication date Nov 7, 2024
- GLOBALWAFERS CO., LTD.
- JunHwan Ji
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR...
- Publication number 20240368802
- Publication date Nov 7, 2024
- SUMCO CORPORATION
- Wataru SUGIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS
- Publication number 20240368805
- Publication date Nov 7, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Etienne PIHAN
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH
- Publication number 20240363354
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- He REN
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER E...
- Publication number 20240363374
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- Mukhles SOWWAN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SYSTEMS AND METHODS FOR MICROVOID ANALYSIS IN CRYSTALS GROWN BY CON...
- Publication number 20240352616
- Publication date Oct 24, 2024
- GLOBALWAFERS CO., LTD.
- Matteo Pannocchia
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...
- Publication number 20240352620
- Publication date Oct 24, 2024
- Siltronic AG
- Karl MANGELBERGER
- C30 - CRYSTAL GROWTH
Information Patent Application
Method, Apparatus, Equipment for Accurately Adjusting ADC Camera an...
- Publication number 20240352615
- Publication date Oct 24, 2024
- Xi'an ESWIN Material Technology Co., Ltd.
- Shaojie SONG
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLE COMBINATION AND THERMAL FIELD ASSEMBLY
- Publication number 20240344233
- Publication date Oct 17, 2024
- LONGI GREEN ENERGY TECHNOLOGY CO., LTD.
- Hong YAO
- C30 - CRYSTAL GROWTH

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Quartz crucible and crystal puller

Fused quartz crucible for producing silicon crystals, and method fo...

Methods for determining suitability of Czochralski growth condition...

Single-crystal pulling apparatus and single-crystal pulling method

Polycrystalline ceramic substrate and method of manufacture

Systems and methods for controlling a gas dopant vaporization rate...

Engineered substrate structures for power and RF applications

Silicon material processing apparatus, silicon ingot production equ...

Cleaning tools and methods for cleaning the pull cable of an ingot...

Ingot puller apparatus that use a solid-phase dopant

Method for producing a substrate for an optical element

Crystal pulling systems having a cover member for covering the sili...

Systems and methods for controlling a gas dopant vaporization rate...

Method for producing silicon ingot single crystal

Inhibiting dripped granular dopant from adhering to a growing silic...

Crystal pulling systems having a cover member for covering the sili...

Methods for determining suitability of silicon substrates for epitaxy

Use of quartz plates during growth of single crystal silicon ingots

Joined body, laser oscillator, laser amplifier, and joined body man...

Silicon wafer and manufacturing method of the same

Epitaxial growth apparatus and method of producing epitaxial wafer

Manufacturing method of single-crystal silicon substrate

Cylinder assembly for improving region of defect-free growth of cry...

Method for producing silicon single crystal

Device and method for pulling a single crystal of semiconductor mat...

Methods for forming a single crystal silicon ingot with reduced cru...

Silicon carbide substrate

Method and device for producing a single crystal of silicon, which...

Method for characterizing defects in silicon crystal

Determination of mass/time ratios for buffer members used during gr...

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...

CRUCIBLES HAVING ANCHORS AND METHODS FOR PRODUCING AND USING SAME

CRUCIBLES HAVING ANCHORS

MANUFACTURING METHOD OF SINGLE CRYSTAL AND SINGLE CRYSTAL MANUFACTU...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SILICON BAR RINSING DEVICE

DEVICES AND METHODS FOR CLEANING A FINISHED MONOCRYSTALLINE SQUARE...

AUTOMATIC DECISION-MAKING FOR WELDING

SUSPENDED LIFTING DEVICE FOR DIVERSION CYLINDER

MAGNET FOR SINGLE CRYSTAL PRODUCTION APPARATUS, SINGLE CRYSTAL PROD...

SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

HALOGEN PLASMA ETCH-RESISTANT SILICON CRYSTALS

METHOD FOR PRODUCING HETEROEPITAXIAL WAFER

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

SEED CRYSTAL LIFTING DEVICE AND SINGLE CRYSTAL FURNACE

PROCESS FOR PRODUCING A SINGLE CRYSTAL FROM SILICON

INGOT PULLER APPARATUS HAVING DOPANT FEEDERS FOR ADDING A PLURALITY...

METHOD FOR PREPARING SILICON SINGLE CRYSTAL ROD AND SINGLE CRYSTAL...

CRUCIBLE ASSEMBLIES AND METHODS FOR FORMING A UNITIZED CRUCIBLE ASS...

DOPED PARTICULATE SILICON PARTICLE SIZE SELECTION

PRODUCTION METHOD FOR SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR...

METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS

LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH

SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER E...

SYSTEMS AND METHODS FOR MICROVOID ANALYSIS IN CRYSTALS GROWN BY CON...

METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...

Method, Apparatus, Equipment for Accurately Adjusting ADC Camera an...

CRUCIBLE COMBINATION AND THERMAL FIELD ASSEMBLY