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CPC
C30B29/06

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

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C30B29/06Silicon

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Patents Grantslast 30 patents

Information Patent Grant
Wafer with regions of low oxygen concentration
- Patent number 12,359,343
- Issue date Jul 15, 2025
- Blue Origin Manufacturing, LLC
- Jesse S. Appel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling a single crystal of silicon in accordance with t...
- Patent number 12,359,342
- Issue date Jul 15, 2025
- Siltronic AG
- Karl Mangelberger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and wafer processing furnace for forming an epitaxial stack...
- Patent number 12,362,174
- Issue date Jul 15, 2025
- ASM IP Holding B.V.
- Steven Van Aerde
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film deposition method and method for forming polycrystalline silic...
- Patent number 12,351,904
- Issue date Jul 8, 2025
- Tokyo Electron Limited
- Yoshihiro Takezawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Production method for silicon monocrystal
- Patent number 12,351,937
- Issue date Jul 8, 2025
- Sumco Corporation
- Shogo Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline silicon material
- Patent number 12,351,466
- Issue date Jul 8, 2025
- Tokuyama Corporation
- Takuya Asano
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for producing a product ingot having low oxygen content
- Patent number 12,351,938
- Issue date Jul 8, 2025
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ingot growing apparatus
- Patent number 12,338,542
- Issue date Jun 24, 2025
- Hanwha Solutions Corporation
- Dong Woo Bae
- C30 - CRYSTAL GROWTH
Information Patent Grant
Protective structure for silicon rod and method for manufacturing s...
- Patent number 12,338,548
- Issue date Jun 24, 2025
- Tokuyama Corporation
- Junya Sakai
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Germanium single-crystal wafer, method for preparing germanium sing...
- Patent number 12,336,319
- Issue date Jun 17, 2025
- Beijing Tongmei Xtal Technology Co., Ltd.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing an epitaxial layer on a substrate wafer
- Patent number 12,331,424
- Issue date Jun 17, 2025
- Siltronic AG
- Thomas Stettner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide powder, method for manufacturing silicon carbide in...
- Patent number 12,325,933
- Issue date Jun 10, 2025
- Senic Inc.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of heat-treating silicon wafer using lateral heat treatment...
- Patent number 12,320,034
- Issue date Jun 3, 2025
- Sumco Corporation
- Yoshihiro Kuwano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate
- Patent number 12,315,721
- Issue date May 27, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing semiconductor wafers
- Patent number 12,313,578
- Issue date May 27, 2025
- Siltronic AG
- Michael Boy
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,308,228
- Issue date May 20, 2025
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing monocrystalline silicon by the Czochralski...
- Patent number 12,297,560
- Issue date May 13, 2025
- Sumco Corporation
- Takashi Izeki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High purity SiOC and SiC, methods compositions and applications
- Patent number 12,291,456
- Issue date May 6, 2025
- Pallidus, Inc.
- Douglas M. Dukes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth susceptor assembly with sacrifice ring
- Patent number 12,291,795
- Issue date May 6, 2025
- GlobalWafers Co., Ltd.
- Hong-Huei Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single-crystal silicon ingots and single-crystal...
- Patent number 12,291,796
- Issue date May 6, 2025
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Zhenliang Song
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing epitaxial silicon wafer
- Patent number 12,278,105
- Issue date Apr 15, 2025
- Sumco Corporation
- Motoki Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for crystal pulling
- Patent number 12,276,041
- Issue date Apr 15, 2025
- SICHUAN JINKO SOLAR CO., LTD.
- Chunsheng Su
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon core wire for depositing polycrystalline silicon and produc...
- Patent number 12,275,642
- Issue date Apr 15, 2025
- Tokuyama Corporation
- Junya Sakai
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Single crystal furnace charging system and charging method
- Patent number 12,276,040
- Issue date Apr 15, 2025
- JINKO SOLAR CO., LTD.
- Ziyang Ou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 12,266,526
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon single crystal based on concentration...
- Patent number 12,258,675
- Issue date Mar 25, 2025
- Sumco Corporation
- Ryota Suewaka
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Single crystal pulling apparatus hot-zone structure, single crystal...
- Patent number 12,252,805
- Issue date Mar 18, 2025
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Qinhu Mao
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type silicon single crystal production method, n-type silicon sin...
- Patent number 12,252,803
- Issue date Mar 18, 2025
- Sumco Corporation
- Koichi Maegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems for production of low oxygen content silicon
- Patent number 12,247,314
- Issue date Mar 11, 2025
- GlobalWafers Co., Ltd.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL AND METHO...
- Publication number 20250230574
- Publication date Jul 17, 2025
- SUMCO CORPORATION
- Yasunobu SHIMIZU
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20250226217
- Publication date Jul 10, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL
- Publication number 20250207294
- Publication date Jun 26, 2025
- SUMCO CORPORATION
- Keisuke HIIDOME
- C30 - CRYSTAL GROWTH
Information Patent Application
Reaction Furnace for Producing Polycrystalline Silicon Rod, Gas Sup...
- Publication number 20250198050
- Publication date Jun 19, 2025
- Tokuyama Corporation
- Ryota Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
SINTERED SILICON NITRIDE WAFER AND METHOD FOR PRODUCING SINGLE CRYS...
- Publication number 20250197300
- Publication date Jun 19, 2025
- Kabushiki Kaisha Toshiba
- Keita KANAHARA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR MANUFACTURING AN INGOT AND SINGLE CRYSTAL GROWING FURNACE
- Publication number 20250179687
- Publication date Jun 5, 2025
- Qinghai Jinko Solar Co., Ltd.
- Zhancang CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND EPITAXIAL SILICON WAFER
- Publication number 20250185323
- Publication date Jun 5, 2025
- SUMCO CORPORATION
- Kohtaroh KOGA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20250179686
- Publication date Jun 5, 2025
- SUMCO CORPORATION
- Masayuki MIURA
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...
- Publication number 20250179682
- Publication date Jun 5, 2025
- SUMCO CORPORATION
- Koichi MAEGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...
- Publication number 20250163606
- Publication date May 22, 2025
- Mach Corporation Co., Ltd.
- Goubun AKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL FILM
- Publication number 20250163609
- Publication date May 22, 2025
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi OHTSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
- Publication number 20250154682
- Publication date May 15, 2025
- Siltronic AG
- Brian MURPHY
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal Cooling Apparatus For Simultaneously Drawing Multiple Cryst...
- Publication number 20250154680
- Publication date May 15, 2025
- LUOYANG CHANGYING NEW ENERGY TECHNOLOGY CO., LTD.
- Liliang Guo
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250149332
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FAST COOLING OF REACTOR FROM HIGH TEMPERATURES
- Publication number 20250146172
- Publication date May 8, 2025
- LPE S.p.A.
- Maurilio Giuseppe Meschia
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL SUBSTRATE
- Publication number 20250146176
- Publication date May 8, 2025
- Resonac Corporation
- Tomohiro Shonai
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20250149333
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PROCESS FOR MANUFACTURING A MONOCRYSTALLINE SILICON SEMICONDUCTOR W...
- Publication number 20250129506
- Publication date Apr 24, 2025
- Siltronic AG
- Timo MUELLER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...
- Publication number 20250129512
- Publication date Apr 24, 2025
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250132152
- Publication date Apr 24, 2025
- QROMIS,INC.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250132155
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR CLEANING THE PULL CABLE OF AN INGOT PULLER APPARATUS
- Publication number 20250121415
- Publication date Apr 17, 2025
- GLOBALWAFERS CO., LTD.
- Chin-Hung Ho
- B08 - CLEANING
Information Patent Application
MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON ROD AND SINGLE-CRYS...
- Publication number 20250109520
- Publication date Apr 3, 2025
- JINKO SOLAR CO., LTD.
- Peng XIANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR DIAMETER MEASUREMENT OF CZOCHRALSKI MONOCR...
- Publication number 20250109521
- Publication date Apr 3, 2025
- ZING SEMICONDUCTOR CORPORATION
- Kwanghun KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILIC...
- Publication number 20250101576
- Publication date Mar 27, 2025
- Siltronic AG
- Lucas BECKER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LAYER TRANSFER USING PATTERNED MASKS AND RELATED SYSTEMS
- Publication number 20250105010
- Publication date Mar 27, 2025
- Massachusetts Institute of Technology
- Hyunseok Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SE...
- Publication number 20250105022
- Publication date Mar 27, 2025
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE AND METHOD FOR PRODUCING A MONOCRYSTALLINE SILICON ROD
- Publication number 20250092563
- Publication date Mar 20, 2025
- Siltronic AG
- Otto ZEMAN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON POWDER FORMING METHOD, SILICON BLOCK AND USE THEREOF
- Publication number 20250092574
- Publication date Mar 20, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Lin WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
CLEANING TOOLS AND METHODS FOR CLEANING THE PULL CABLE OF AN INGOT...
- Publication number 20250091100
- Publication date Mar 20, 2025
- GLOBALWAFERS CO., LTD.
- Chin-Hung Ho
- B08 - CLEANING

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Wafer with regions of low oxygen concentration

Method for pulling a single crystal of silicon in accordance with t...

Method and wafer processing furnace for forming an epitaxial stack...

Film deposition method and method for forming polycrystalline silic...

Production method for silicon monocrystal

Polycrystalline silicon material

Methods for producing a product ingot having low oxygen content

Ingot growing apparatus

Protective structure for silicon rod and method for manufacturing s...

Germanium single-crystal wafer, method for preparing germanium sing...

Method for depositing an epitaxial layer on a substrate wafer

Silicon carbide powder, method for manufacturing silicon carbide in...

Method of heat-treating silicon wafer using lateral heat treatment...

Polycrystalline ceramic substrate

Method for producing semiconductor wafers

Manufacturing method for semiconductor silicon wafer

Method for manufacturing monocrystalline silicon by the Czochralski...

Method and apparatus for low temperature selective epitaxy in a dee...

High purity SiOC and SiC, methods compositions and applications

Single crystal growth susceptor assembly with sacrifice ring

Method for growing single-crystal silicon ingots and single-crystal...

Method for producing epitaxial silicon wafer

Method for crystal pulling

Silicon core wire for depositing polycrystalline silicon and produc...

Single crystal furnace charging system and charging method

Formation of single crystal semiconductors using planar vapor liqui...

Method of producing a silicon single crystal based on concentration...

Single crystal pulling apparatus hot-zone structure, single crystal...

N-type silicon single crystal production method, n-type silicon sin...

Systems for production of low oxygen content silicon

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL AND METHO...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL

Reaction Furnace for Producing Polycrystalline Silicon Rod, Gas Sup...

SINTERED SILICON NITRIDE WAFER AND METHOD FOR PRODUCING SINGLE CRYS...

METHOD FOR MANUFACTURING AN INGOT AND SINGLE CRYSTAL GROWING FURNACE

SILICON WAFER AND EPITAXIAL SILICON WAFER

EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME

N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...

METHOD FOR PRODUCING HETEROEPITAXIAL FILM

HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE

Crystal Cooling Apparatus For Simultaneously Drawing Multiple Cryst...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

FAST COOLING OF REACTOR FROM HIGH TEMPERATURES

SiC SINGLE CRYSTAL SUBSTRATE

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

PROCESS FOR MANUFACTURING A MONOCRYSTALLINE SILICON SEMICONDUCTOR W...

METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

METHODS FOR CLEANING THE PULL CABLE OF AN INGOT PULLER APPARATUS

MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON ROD AND SINGLE-CRYS...

METHOD AND APPARATUS FOR DIAMETER MEASUREMENT OF CZOCHRALSKI MONOCR...

METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILIC...

LAYER TRANSFER USING PATTERNED MASKS AND RELATED SYSTEMS

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SE...

DEVICE AND METHOD FOR PRODUCING A MONOCRYSTALLINE SILICON ROD

SILICON POWDER FORMING METHOD, SILICON BLOCK AND USE THEREOF

CLEANING TOOLS AND METHODS FOR CLEANING THE PULL CABLE OF AN INGOT...