Patent Application
20240011717
The present invention relates to a heat diffusion device.
In recent years, there have been increases in amount of heat generation as a result of increases in integration density and performance level of elements. In addition, there have been increases in heat generation density as a result of reduction in sizes of products and thus it is important to take measures to dissipate heat. Such a situation is particularly conspicuous in the field of mobile terminals such as smartphones and tablets. A graphite sheet or the like is used as a member serving as a countermeasure against heat in many cases. However, since the graphite sheet is not sufficient in amount of heat transfer, using various members serving as countermeasures against heat has been investigated. Particularly, using a vapor chamber, which is a planar heat pipe, has been investigated since using the vapor chamber can result in very effective heat diffusion.
The vapor chamber has a structure in which a working medium and a wick that transfers the working medium by means of capillary attraction are encapsulated in a housing. The working medium absorbs heat from a heat generating element in an evaporation portion in which heat from the heat generating element is absorbed and after the working medium evaporates in the vapor chamber, the working medium moves to a condensation portion and is cooled to return to a liquid phase. The working medium that has returned to the liquid phase moves again to the evaporation portion on a heat generating element side due to the capillary attraction of the wick and cools the heat generating element. With repetition of the above-described process, the vapor chamber independently operates without external power and heat can be two-dimensionally diffused at a high speed by means of latent heat of evaporation and latent heat of condensation of the working medium.
Patent Document 1 discloses a heat dissipation module including: a container and a wick. The container encapsulates a working fluid and includes an evaporation portion in which the encapsulated working fluid is evaporated and a condensation portion in which the evaporated working fluid is condensed. The wick comes into contact with each of a pair of inner wall surfaces of the container facing each other and moves the condensed working fluid from the condensation portion to the evaporation portion by means of capillary attraction. A puddle flow path for the condensed working fluid is formed in a space surrounded by the pair of inner wall surfaces, a side surface of the wick that does not come into contact with the pair of inner wall surfaces, and a facing surface that is formed to be separated from the side surface of the wick.
In addition, Patent Document 1 discloses a heat dissipation module in which a plurality of wicks are disposed in a container (refer to FIG. 7 of Patent Document 1).
In the heat dissipation module (a heat diffusion device) as described in Patent Document 1, depending on the shape or the posture of the container, a puddle of the working fluid (a working medium) may be one-sided due to the effects of gravity. If the puddle is one-sided, there is a case where the working fluid (the working medium) cannot be collected by the wick. In addition, since the temperature around the puddle is low, the in-plane temperature uniformity of the heat dissipation module (the heat diffusion device) is one-sided.
If the working fluid (the working medium) cannot be collected by the wick, or if the in-plane temperature uniformity of the heat dissipation module (the heat diffusion device) is one-sided, there is a problem that the maximum amount of heat transfer decreases.
Although a method of increasing the number of wicks or routing one long wick to solve a problem that the working fluid (the working medium) cannot be collected by the wick is conceivable, it is not possible to solve a problem that the puddle is one-sided.
The present invention has been made to solve the above-described problems and an object thereof is to provide, by suppressing formation of a one-sided puddle depending on the shape or the posture of the heat diffusion device, a heat diffusion device in which the in-plane temperature uniformity is enhanced and the maximum amount of heat transfer becomes less likely to be decreased.
The present invention provides a heat diffusion device including: a housing that defines an internal space and has a first inner wall surface and a second inner wall surface that face each other in a thickness direction of the housing; a working medium encapsulated in the internal space; a first wick and a second wick in the internal space, wherein each of the first wick and the second wick has a portion that extends in a direction perpendicular to the thickness direction, and that abuts the first inner wall surface and the second inner wall surface of the housing; and a partition wall that is gas-impermeable positioned in the internal space such that, in a plan view of the internal space in the thickness direction, the partition wall is interposed between the first wick and the second wick, and the partition wall has a first end portion and a second end portion, the second end portion of the partition wall being connected to an inner surface of the housing so as to define a vapor flow path in the internal space of the housing between at least one of the first wick and the partition wall or the second wick and the partition wall.
According to the present invention, a heat diffusion device in which the in-plane temperature uniformity is enhanced and the maximum amount of heat transfer becomes less likely to be decreased is provided by suppressing formation of a one-sided puddle depending on the shape or the posture of the heat diffusion device.
Hereinafter, a heat diffusion device of the present invention will be described.
However, the present invention is not limited to the following configurations, and can be applied after being appropriately modified without changing the gist of the present invention. Note that a combination of two or more of separate desired configurations of the present invention, which will be described below, is also the present invention.
The present invention provides a heat diffusion device including: a housing that defines an internal space and has a first inner wall surface and a second inner wall surface that face each other in a thickness direction of the housing; a working medium encapsulated in the internal space; a first wick and a second wick in the internal space, wherein each of the first wick and the second wick has a portion that extends in a direction perpendicular to the thickness direction, and that abuts the first inner wall surface and the second inner wall surface of the housing; and a partition wall that is gas-impermeable positioned in the internal space such that, in a plan view of the internal space in the thickness direction, the partition wall is interposed between the first wick and the second wick, and the partition wall has a first end portion and a second end portion, the second end portion of the partition wall being connected to an inner surface of the housing so as to define a vapor flow path in the internal space of the housing between at least one of the first wick and the partition wall or the second wick and the partition wall.
In the following description, in a case where embodiments are not to be distinguished in particular from each other, the heat diffusion device will be referred to as “a vapor chamber which is a heat diffusion device of the present invention” or “a vapor chamber of the present invention”.
Hereinafter, specific embodiments of the heat diffusion device of the present invention will be described.
Each of the embodiments described below is merely an example, and it is a matter of course that it is possible to partially replace or combine configurations described in different embodiments. In second and subsequent embodiments, descriptions about matters common to a first embodiment will be omitted, and only differences will be described. Particularly, similar actions and effects achieved by similar configurations will not be repeatedly mentioned in each embodiment.
The drawings below are schematic, and dimensions, aspect ratios, and the like therein may be different from those of an actual product.
A vapor chamber 1 shown in
The vapor chamber 1 has a planar shape as a whole. That is, the housing 10 has a planar shape as a whole. Here, “planar shapes” include a plate-like shape and a sheet-like shape, and a “planar shape” means shape of which a dimension (hereinafter, will be referred to as the width) in a width direction X and a dimension (hereinafter, will be referred to as the length) in a length direction Y are considerably larger than a dimension (hereinafter, will be referred to as the thickness or the height) in a thickness direction Z. For example, a “planar shape” means a shape of which the width and the length are equal to or larger than ten times the thickness thereof, preferably equal to or larger 100 times the thickness thereof.
The size of the vapor chamber 1, that is, the size of the housing 10 is not particularly limited. The width and the length of the vapor chamber 1 can be appropriately set in accordance with the purpose of use of the vapor chamber 1. Each of the width and the length of the vapor chamber 1 is, for example, 5 mm to 500 mm, 20 mm to 300 mm, or 50 mm to 200 mm. The width and the length of the vapor chamber 1 may be the same as each other or different from each other.
When the vapor chamber has a shape other than a rectangular shape, the width and the length of the vapor chamber are determined as the maximum values in the width direction and the length direction.
The housing 10 is preferably composed of a first sheet 11 and a second sheet 12 that face each other with outer edge portions thereof being bonded to each other. The materials of the first sheet 11 and the second sheet 12 are not particularly limited as long as the sheets have characteristics (for example, thermal conductivity, strength, softness, and flexibility) suitable to be used as vapor chambers. The materials of the first sheet 11 and the second sheet 12 are preferably metal (for example, copper, nickel, aluminum, magnesium, titanium, iron, or an alloy containing those materials as main components) and particularly preferably copper. Although the materials of the first sheet 11 and the second sheet 12 may be the same as each other or different from each other, the materials are preferably the same as each other.
In a case where the housing 10 includes the first sheet 11 and the second sheet 12, the first sheet 11 and the second sheet 12 are bonded to each other at the outer edge portions thereof. As a bonding method, although there is no particular limit, laser welding, resistance welding, diffusion bonding, brazing, tungsten-inert gas welding (TIG welding), ultrasonic bonding, or resin bonding can be used, for example. Preferably laser welding, resistance welding, or brazing can be used.
Although the thicknesses of the first sheet 11 and the second sheet 12 are not particularly limited, the thicknesses are each preferably 10 μm to 200 μm, more preferably 30 μm to 100 μm, and still more preferably 40 μm to 60 μm. The thicknesses of the first sheet 11 and the second sheet 12 may be the same as each other or different from each other. In addition, each of the first sheet 11 and the second sheet 12 may be constant in thickness over the entire body, or may be partially thin.
The shapes of the first sheet 11 and the second sheet 12 are not particularly limited. For example, the first sheet 11 may have a flat plate-like shape of which the thickness is constant, and the second sheet 12 may have a shape of which the outer edge portion is thicker than a portion other than the outer edge portion.
Alternatively, the first sheet 11 may have a flat plate-like shape of which the thickness is constant, and the second sheet 12 may have a shape of which the thickness is constant and of which a portion other than the outer edge portion outwardly protrudes with respect to the outer edge portion. In this case, a recess is formed at an outer edge portion of the housing 10. Therefore, the recess of the outer edge portion can be used at a time of mounting the vapor chamber or the like. In addition, other components or the like can be disposed in the recesses of the outer edge portion.
Although the thickness of the entire vapor chamber 1 is not particularly limited, the thickness is preferably 50 μm to 500 μm.
The planar shape of the housing 10 as seen in the thickness direction Z is a rectangular shape of which a longitudinal direction is parallel to the length direction Y.
Note that the shape of the housing of the vapor chamber, which is the heat diffusion device according to the present invention, is not particularly limited and may be, for example, an L-like shape, a C-like shape (a U-like shape), a step-like shape, or the like.
In addition, the housing may have a space (a through-hole) inside the planar shape thereof. The planar shape of the housing may be a shape matching the purpose of use of the vapor chamber, the shape of a place where the vapor chamber is inserted, and other nearby components.
Next, the internal structure of the vapor chamber 1 will be described.
As shown in
In the following description, for the sake of convenience, a surface on an upper side of the housing 10 in
Note that the posture of the vapor chamber 1 of the present invention at the time of use is not particularly limited, and the vapor chamber 1 does not need to be used in a state where the upper surface 10U is on an upper side in a vertical direction.
In addition, all of the upper surface 10U, the left surface 10L, the right surface 10R, and the bottom surface 10B are inner surfaces of the housing 10 that form the internal space 13.
As shown in
The working medium 20 is not particularly limited as long as the working medium 20 can cause a gas-liquid phase change under the environment inside the housing 10 and water, alcohols, CFC substitutes, and the like can be used as the working medium 20, for example. For example, the working medium is an aqueous compound and is preferably water.
As shown in
As shown in
The first region 13a and the second region 13b are continuously adjacent to each other.
The first region 13a and the third region 13c are continuously adjacent to each other.
The first region 13a and the fourth region 13d are continuously adjacent to each other.
The second region 13b and the third region 13c are adjacent to each other with a first partition wall 14a interposed therebetween, the first partition wall 14a being gas-impermeable.
The third region 13c and the fourth region 13d are adjacent to each other with a second partition wall 14b interposed therebetween, the second partition wall 14b being gas-impermeable.
The first partition wall 14a has a first end portion 14a1 and a second end portion 14a2, the first end portion 14a1 abuts the first region 13a, and the second end portion 14a2 is connected to the bottom surface 10B.
The second partition wall 14b has a first end portion 14b1 and a second end portion 14b2, the first end portion 14b1 abuts the first region 13a, and the second end portion 14b2 is connected to the bottom surface 10B.
That is, the second region 13b is a region surrounded by the left surface 10L, the bottom surface 10B, and the first partition wall 14a. Note that the first region 13a and the second region 13b are distinguished from each other by a boundary that connects the left surface 10L to the first end portion 14a1 of the first partition wall 14a in the shortest distance.
In addition, the third region 13c is a region surrounded by the first partition wall 14a, the bottom surface 10B, and the second partition wall 14b. Note that the first region 13a and the third region 13c are distinguished from each other by a boundary that connects the first end portion 14a1 of the first partition wall 14a to the first end portion 14b1 of the second partition wall 14b.
In addition, the fourth region 13d is a region surrounded by the second partition wall 14b, the bottom surface 10B, and the right surface 10R. Note that the first region 13a and the fourth region 13d are distinguished from each other by a boundary that connects the first end portion 14b1 of the second partition wall 14b to the right surface 10R in the shortest distance.
In addition, the first region 13a is a region surrounded by the left surface 10L, the upper surface 10U, and the right surface 10R. Note that the boundaries between the first region 13a and each of the second region 13b, the third region 13c and the fourth region 13d are as described above.
Note that, although the first end portion 14a1 of the first partition wall 14a and the first end portion 14b1 of the second partition wall 14b are formed to be separated from the evaporation portion EP in
As shown in
The widths of the first partition wall 14a and the second partition wall 14b (the widths in the width direction X in
Preferably, the first partition wall 14a and the second partition wall 14b are, for example, copper, nickel, aluminum, magnesium, titanium, iron, or alloys containing those materials as main components although there is no particular limit as long as the first partition wall 14a and the second partition wall 14b are made gas-impermeable. In addition, the first partition wall 14a and the second partition wall 14b are preferably formed of the same material as the materials of the first sheet 11 and the second sheet 12.
Although the materials of the first partition wall 14a and the second partition wall 14b may be the same as each other or different from each other, the materials are preferably the same as each other.
In addition, the materials of the first partition wall 14a and the second partition wall 14b may be the same as the materials of the first sheet 11 and the second sheet 12 and may be different from the materials of the first sheet 11 and the second sheet 12.
The first partition wall 14a and the second partition wall 14b may be formed by bonding plate materials to each other through laser welding, resistance welding, diffusion bonding, brazing, tungsten-inert gas welding (TIG welding), ultrasonic bonding, or resin bonding.
In addition, the first partition wall 14a and the second partition wall 14b may be formed by performing etching on the first sheet 11 and the second sheet 12.
In addition, the first partition wall 14a and the second partition wall 14b may be formed by printing with sintered metal and performing sintering.
As shown in
The wicks 35 include a first wick 35a formed over an area from the first region 13a to the second region 13b, a second wick 35b formed over an area from the first region 13a to the third region 13c, and a third wick 35c formed over an area from the first region 13a to the fourth region 13d.
The first wick 35a is formed along the bottom surface 10B of the second region 13b and the left surface 10L.
The second wick 35b is formed along the bottom surface 10B of the third region 13c and the first partition wall 14a.
The third wick 35c is formed along the bottom surface 10B of the fourth region 13d and the right surface 10R.
The wicks 35 are disposed such that one end portion of each of the first wick 35a, the second wick 35b, and the third wick 35c reaches the evaporation portion EP.
Note that a region in the vicinity of the other end portion of each of the first wick 35a, the second wick 35b, and the third wick 35c is at a position separated from the evaporation portion EP and is a condensation portion in which an evaporated working medium is condensed.
As shown in
Each wick 35 includes a first porous body 41 and a second porous body 42. The porous bodies have a function of transferring the working medium 20 by means of capillary attraction.
In addition, each of the first porous body 41 and the second porous body 42 constituting each wick 35 has a portion that abuts the first inner wall surface 11a and the second inner wall surface 12a of the housing 10. Since the porous bodies are disposed in the internal space 13 of the housing 10, it is possible to absorb an impact from the outside of the housing 10 while securing the mechanical strength of the housing 10.
The thicknesses of the first porous body 41 and the second porous body 42 constituting each wick 35 are substantially the same as the thickness of the internal space 13 of the housing 10.
In the internal space 13 of the housing 10, vapor flow paths 50 through which the working medium 20 in a gas phase flows are formed between the first wick 35a and the first partition wall 14a, between the second wick 35b and the second partition wall 14b, and between the third wick 35c and the second partition wall 14b.
As the first porous body 41 and the second porous body 42, for example, metal porous films formed through etching or metal working, meshes, non-woven fabrics, sintered bodies, and other porous bodies are used. Meshes that are the materials of the wicks may be composed of, for example, metal meshes, resin meshes, surface-coated metal meshes, or surface-coated resin meshes and preferably composed of copper meshes, stainless steel (SUS) meshes, or polyester meshes. Sintered bodies that are the materials of the wicks may be composed of, for example, metal porous sintered bodies or ceramic porous sintered bodies and preferably composed of porous sintered bodies formed of copper or nickel.
Other porous bodies that are the materials of the wicks may be composed of, for example, metal porous bodies, ceramic porous bodies, resin porous bodies, or the like.
Note that porous bodies include meshes, non-woven fabrics, and sintered bodies as well in the present specification.
As shown in
Next, effects achieved in a case where the vapor chamber 1 is used will be described.
Although the details will be described later, in the case of a vapor chamber in the related art in which a first partition wall and a second partition wall are not formed, a puddle may be formed in a state of being one-sided to one position depending on the posture of the vapor chamber.
However, in the case of the vapor chamber 1, it is possible to suppress formation of such a puddle that is one-sided to one position.
This effect will be described below with reference to the drawings.
As shown in
Such a working medium 20 in the liquid phase is quickly collected by the first wick 35a, the second wick 35b, and the third wick 35c.
That is, in the vapor chamber 1, the working medium 20 in the liquid phase is less likely to be accumulated in a state of being one-sided to one position.
Therefore, the in-plane temperature uniformity of the vapor chamber 1 is maintained, and it is possible to suppress a decrease in maximum amount of heat transfer.
In addition, the working medium 20 in a gas phase moves substantially evenly to the second region 13b, the third region 13c, and the fourth region 13d, although the working medium 20 is affected by the gravity.
Since the first partition wall 14a and the second partition wall 14b are gas-impermeable, the working medium 20 in the gas phase cannot move between the second region 13b and the third region 13c through the first partition wall 14a and cannot move between the third region 13c and the fourth region 13d through the second partition wall 14b.
Therefore, it is possible to suppress occurrence of the working medium 20 that is one-sided to any one of the second region 13b, the third region 13c, and the fourth region 13d.
That is, a fact that the first partition wall 14a and the second partition wall 14b are gas-impermeable contributes to maintenance of the in-plane temperature uniformity of the vapor chamber 1.
In addition, in a case where the working medium 20 is water, the first partition wall 14a and the second partition wall 14b are preferably hydrophobic.
In a case where the first partition wall 14a and the second partition wall 14b are hydrophobic, water is less likely to adhere to the first partition wall 14a and the second partition wall 14b. In addition, in a case where the phase of water becomes a liquid phase, the water quickly moves along the first partition wall 14a and the second partition wall 14b, and is easily collected by each wick.
In the vapor chamber 1 shown in
In a case where a plurality of wicks are disposed, the efficiency of collection of the working medium is improved.
If the number of wicks is too large, the ratio of an area occupied by the vapor flow paths is decreased and thus vapor diffusion pressure loss is made large. As a result, a decrease in maximum amount of heat transfer becomes likely to occur.
A preferable ratio of the wicks to the internal space is as follows.
In the vapor chamber 1, a ratio of the area of the first wick 35a to the area of the second region 13b in plan view of the internal space 13 as seen in the thickness direction Z is preferably 60% or less and more preferably 30% or less.
In the vapor chamber 1, a ratio of the area of the second wick 35b to the area of the third region 13c in plan view of the internal space 13 as seen in the thickness direction Z is preferably 60% or less and more preferably 30% or less.
In the vapor chamber 1, a ratio of the area of the third wick 35c to the area of the fourth region 13d in plan view of the internal space 13 as seen in the thickness direction Z is preferably 60% or less and more preferably 30% or less.
When the ratio of the area of the first wick 35a to the area of the second region 13b exceeds 60%, the ratio of the area occupied by the vapor flow paths decreases, and the vapor diffusion pressure loss is made large. As a result, a decrease in maximum amount of heat transfer becomes likely to occur.
The same applies to the ratio of the area of the second wick 35b to the area of the third region 13c and the ratio of the area of the third wick 35c to the area of the fourth region 13d.
Problems occurring in a case where a vapor chamber in the related art, in which a first partition wall and a second partition wall are not formed, is used will also be described below.
A vapor chamber 1′ shown in
The first wick 35a′, the second wick 35b′, and the third wick 35c′ are formed to extend from the evaporation portion EP to the vicinity of the bottom surface 10B.
The vapor flow paths 50 are formed between the left surface 10L and the first wick 35a′, between the first wick 35a′ and the second wick 35b′, between the second wick 35b′ and the third wick 35c′, and between the third wick 35c′ and the right surface 10R.
In a case where the vapor chamber 1′ is used in such a posture that the right surface 10R faces the lower side in the vertical direction, the working medium 20 in a liquid phase is one-sided to a connection portion between the bottom surface 10B and the right surface 10R due to the gravity and the pressure of the working medium 20 in a gas phase passing through the vapor flow paths 50 (represented by arrows P in
In a case where such a puddle is one-sided, the working medium 20 cannot be collected by the first wick 35a′ and the second wick 35b′ although the working medium 20 can be collected by the third wick 35c′. Since the temperature around the puddle is low, the in-plane temperature uniformity of the vapor chamber 1′ is one-sided.
In such a case, the maximum amount of heat transfer of the vapor chamber 1′ is decreased.
Next, a vapor chamber, which is a heat diffusion device according to a second embodiment of the present invention, will be described.
In the case of a vapor chamber 101 shown in
In the following description, for the sake of convenience, a surface on an upper side of the housing 110 in
The right surface 110R of the housing 110 is formed in a crank-like shape.
Note that the posture of the vapor chamber 101 of the present invention at the time of use is not particularly limited, and the vapor chamber 101 does not need to be used in a state where the upper surface 110U is on an upper side in the vertical direction.
In addition, all of the upper surface 110U, the left surface 110L, the right surface 110R, and the bottom surface 110B are inner surfaces of the housing 110 that form an internal space 113.
As shown in
The first region 113a and the second region 113b are continuously adjacent to each other.
The first region 113a and the third region 113c are continuously adjacent to each other.
The first region 113a and the fourth region 113d are continuously adjacent to each other.
The second region 113b and the third region 113c are adjacent to each other with a first partition wall 114a interposed therebetween, the first partition wall 114a being gas-impermeable.
The third region 113c and the fourth region 113d are adjacent to each other with a second partition wall 114b interposed therebetween, the second partition wall 114b being gas-impermeable.
The first partition wall 114a has a first end portion 114a1 and a second end portion 114a2, the first end portion 114a1 abuts the first region 113a, and the second end portion 114a2 is connected to the bottom surface 110B.
The second partition wall 114b has a first end portion 114b1 and a second end portion 114b2, the first end portion 114b1 abuts the first region 113a, and the second end portion 114b2 is connected to the bottom surface 110B.
That is, the second region 113b is a region surrounded by the left surface 110L, the bottom surface 110B, and the first partition wall 114a. Note that the first region 113a and the second region 113b are distinguished from each other by a boundary that connects the left surface 110L to the first end portion 114a1 of the first partition wall 114a in the shortest distance.
In addition, the third region 113c is a region surrounded by the first partition wall 114a, the bottom surface 110B, and the second partition wall 114b. Note that the first region 113a and the third region 113c are distinguished from each other by a boundary that connects the first end portion 114a1 of the first partition wall 114a to the first end portion 114b1 of the second partition wall 114b.
In addition, the fourth region 113d is a region surrounded by the second partition wall 114b, the bottom surface 110B, and the right surface 110R. Note that the first region 113a and the fourth region 113d are distinguished from each other by a boundary that connects the first end portion 114b1 of the second partition wall 114b to the right surface 110R in the shortest distance.
In addition, the first region 113a is a region surrounded by the left surface 110L, the upper surface 110U, and the right surface 110R. Note that the boundaries between the first region 113a and each of the second region 113b, the third region 113c and the fourth region 113d are as described above.
The first partition wall 114a and the second partition wall 114b are bent such that the working medium 20 in a liquid phase can be moved to the first region 113a by the gravity when the upper surface 110U of the vapor chamber 101 is positioned on the lower side in the vertical direction.
That is, the first partition wall 114a and the second partition wall 114b are formed to be bent toward the evaporation portion EP from the bottom surface 110B.
Wicks 135 are disposed in the internal space 113.
The wicks 135 include a first wick 135a formed over an area from the first region 113a to the second region 113b, a second wick 135b formed over an area from the first region 113a to the third region 113c, and a third wick 135c formed over an area from the first region 113a to the fourth region 113d.
The first wick 135a is formed along the bottom surface 110B of the second region 113b, the left surface 110L, and a portion of the first partition wall 114a.
The second wick 135b is formed along the bottom surface 110B of the third region 113c, the first partition wall 114a, and a portion of the second partition wall 114b.
The third wick 135c is formed along the bottom surface 110B of the fourth region 113d and the right surface 110R.
Next, effects achieved in a case where the vapor chamber 101 is used in such a posture that the bottom surface 110B is positioned on the lower side in the vertical direction will be described.
Since the vapor chamber 101 shown in
In addition, the working medium 20 in the liquid phase formed in the second region 113b, the third region 113c, and the fourth region 113d is quickly collected by the first wick 135a, the second wick 135b, and the third wick 135c.
Therefore, the in-plane temperature uniformity of the vapor chamber 101 is maintained, and it is possible to suppress a decrease in maximum amount of heat transfer.
Problems occurring in a case where a vapor chamber in the related art, in which a first partition wall and a second partition wall are not formed, is used will also be described below.
A vapor chamber 101′ shown in
The first wick 135a′ is formed to extend from the evaporation portion EP to the vicinity of the bottom surface 110B.
The second wick 135b′ is formed to extend toward the bottom surface 110B from the evaporation portion EP, to be bent at an intermediate position, and to extend to the vicinity of a connection portion between the bottom surface 110B and the right surface 110R.
The third wick 135c′ is formed along the right surface 110R in a crank-like shape.
The vapor flow paths 50 are formed between the first wick 135a′ and the second wick 135b′ and between the second wick 135b′ and the third wick 135c′.
In a case where the vapor chamber 101′ is used in such a posture that the bottom surface 110B is positioned on the lower side in the vertical direction, the working medium 20 in a liquid phase is one-sided to a connection portion between the bottom surface 110B and the right surface 110R due to the gravity and the pressure of the working medium 20 in a gas phase passing through the vapor flow paths 50 (represented by arrows P in
In a case where such a puddle is one-sided, the working medium 20 cannot be collected by the first wick 135a′ although the working medium 20 can be collected by the second wick 135b′ and the third wick 135c′. Since the temperature around the puddle is low, the in-plane temperature uniformity of the vapor chamber 101′ is one-sided.
In such a case, the maximum amount of heat transfer of the vapor chamber 101′ is decreased.
Next, a case where the vapor chamber 101 or the vapor chamber 101′ is used such that the right surface 110R is positioned on the lower side in the vertical direction will be described.
As shown in
Such a working medium 20 in the liquid phase is quickly collected by the first wick 135a, the second wick 135b, and the third wick 135c.
That is, in the vapor chamber 101, the working medium 20 in the liquid phase is less likely to be accumulated in a state of being one-sided to one position.
Therefore, the in-plane temperature uniformity of the vapor chamber 101 is maintained, and it is possible to suppress a decrease in maximum amount of heat transfer.
Meanwhile, in a case where the vapor chamber 101′ is used such that the right surface 110R is positioned on the lower side in the vertical direction as shown in
In a case where such a puddle is one-sided, the working medium 20 cannot be collected by the first wick 135a′ and the second wick 135b′ although the working medium 20 can be collected by the third wick 135c′. Since the temperature around the puddle is low, the in-plane temperature uniformity of the vapor chamber 101′ is one-sided.
In such a case, the maximum amount of heat transfer of the vapor chamber 101′ is decreased.
In the vapor chamber, which is the heat diffusion device according to the first embodiment of the present invention, the partition wall is formed as an integral wall and is formed to continue from the first inner wall surface to the second inner wall surface in the thickness direction.
However, in the vapor chamber, which is the heat diffusion device according to the present invention, the partition wall may be formed by two walls that are a wall formed on the first inner wall surface and a wall formed on the second inner wall surface.
In addition, in the vapor chamber, which is the heat diffusion device according to the present invention, the partition wall may be formed in the thickness direction from the first inner wall surface to the second inner wall surface and the partition wall may be provided with a discontinuation region between the first inner wall surface and the second inner wall surface.
An example of such a partition wall will be described with reference to the drawings.
A partition wall 214 shown in
A position where the partition wall 214A is formed and a position where the partition wall 214B is formed are offset from each other in the width direction X and the partition wall 214A and the partition wall 214B are in contact with each other.
A partition wall 314 shown in
A partition wall 414 shown in
A discontinuation region 415 is formed between an end portion of the partition wall 414A and an end portion of the partition wall 414B.
A position where the partition wall 414A is formed and a position where the partition wall 414B is formed are the same as each other in the width direction X.
A partition wall 514 shown in
A position where the partition wall 514A is formed and a position where the partition wall 514B is formed are offset from each other in the width direction X.
A discontinuation region 515 is formed between the partition wall 514A and the partition wall 514B.
Even if a discontinuation region is formed as shown in
Therefore, even in the case of such a vapor chamber, a decrease in maximum amount of heat transfer is less likely to occur.
In the vapor chamber which is the heat diffusion device according to the first embodiment of the present invention and the vapor chamber which is the heat diffusion device according to the second embodiment of the present invention, the internal space of the housing is formed by the first region, the second region, the third region, and the fourth region.
However, in the vapor chamber which is the heat diffusion device of the present invention, the internal space of the housing may be formed only by the first region, the second region, and the third region.
In addition, in the vapor chamber which is the heat diffusion device of the present invention, the internal space of the housing may further include another region.
Note that the other region is continuously adjacent to the first region and is adjacent to still another region with a partition wall interposed therebetween. In addition, in the other region, a wick is formed over an area from the first region to the other region.
[Electronic Device Provided with Vapor Chamber]
The vapor chamber, which is the heat diffusion device of the present invention, can be mounted in an electronic device for the purpose of dissipating heat. Therefore, the vapor chamber can be used in the form of an electronic device including the vapor chamber, which is the heat diffusion device of the present invention, and an electronic component attached to an outer wall surface of a housing constituting the vapor chamber.
As described above, the vapor chamber, which is the heat diffusion device of the present invention, independently operates without external power and heat can be two-dimensionally diffused at a high speed by means of latent heat of evaporation and latent heat of condensation of a working medium. Therefore, with the electronic device including the vapor chamber which is the heat diffusion device of the present invention, it is possible to effectively achieve heat dissipation in a limited space in the electronic device.
The electronic component corresponds to the heat source HS shown in
Examples of the electronic device include a smartphone, a tablet terminal, a notebook computer, a game machine, a wearable device, and the like. In addition, examples of the electronic component which is a target to be cooled include a heat generating element such as a central processing unit (CPU), a light emitting diode (LED), and a power semiconductor.
The electronic component may be directly attached to the outer wall surface of the housing and may be attached to the outer wall surface with another member such as a high-thermal-conductivity pressure sensitive adhesive, a high-thermal-conductivity sheet, or a high-thermal-conductivity tape interposed therebetween.
The vapor chamber, which is the heat diffusion device of the present invention, can be used for a wide range of purposes of use in the field of portable information terminals or the like. For example, the vapor chamber can be used to lengthen a time, for which an electronic device is used, by decreasing the temperature of a heat source such as a CPU and can be used for a smartphone, a tablet terminal, a notebook computer, and the like.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-095017 | Jun 2021 | JP | national |
The present application is a continuation of International application No. PCT/JP2022/014906, filed Mar. 28, 2022, which claims priority to Japanese Patent Application No. 2021-095017, filed Jun. 7, 2021, the entire contents of each of which are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2022/014906 | Mar 2022 | US |
| Child | 18465201 | US |
