Heating apparatus and semiconductor manufacturing apparatus

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to a heating apparatus and a semiconductor manufacturing apparatus. Particularly, the present invention relates to a heating apparatus and semiconductor manufacturing apparatus for manufacturing, for example, a silicon single crystal semiconductor substrate and a semiconductor substrate which an oxide film is deposited on.

(2) Description of Related Art

Silicon substrates having an epitaxial structure have often been used as start materials for semiconductor integrated circuit elements with high integration and high performance of the elements. The epitaxial silicon substrate is obtained by subjecting a silicon single crystal thin film to vapor phase epitaxial growth on a silicon single crystal substrate. Examples of manufacturing methods thereof include a batch system and a single wafer system. In the batch system, the number of silicon single crystal substrates which can be processed by one process is several wafers to tens of wafers. In the single wafer system, the substrates are processed wafer by wafer.

This conventional vapor phase epitaxial growth apparatus is composed of a reaction gas inlet for introducing reaction gas into the apparatus from the outside of the apparatus, a support which supports the silicon single crystal substrate, a transparent quartz glass plate which surrounds the support and forms a reaction chamber space, and a heating apparatus for heating the support.

When the support is heated by the heating apparatus in the epitaxial growth apparatus, the silicon single crystal substrate placed on the support is heated. When the temperature of the silicon single crystal substrate reaches a desired temperature, the reaction gas is introduced into the reaction chamber formed of the quartz glass plate from the outside of the apparatus. The reaction gas is decomposed in the reaction chamber, and the silicon single crystal thin film is epitaxially grown on the silicon single crystal substrate.

Meanwhile, the temperatures of about 600 to 1200° C. are required for the silicon epitaxial growth, and the difference in temperature caused by uneven heating affects the results of growth such as the growth rate and film characteristic. A variation is problematically generated in the characteristic of a device by the difference in temperature. Particularly, a crystal defect referred to as transposition and slip in a single crystal lattice is generated by uneven heating in a high temperature range, and thereby the device characteristic is restricted or the device malfunctions.

Then, in order to solve such a problem, a heat treatment apparatus as shown in, for example, FIG. 6 has been proposed. FIG. 6 illustrates a conventional heat treatment apparatus. JP 2003-347228A discloses a heat treatment apparatus 110. The heat treatment apparatus 110 is provided with a casing 112 which forms a treatment chamber 111 for processing a plurality of wafers 101 as substrates to be treated. The casing 112 is composed of a cylindrical upper cup 113 a lower surface of which is opened and a cylindrical lower cup 114 an upper surface of which is opened, and has a cylindrical hollow shape. A disk-shape transmission plate 115, which is made of quartz, is held between the upper cup 113 and the lower cup 114. An exhaust port 116 is formed in a part of the side wall of the lower cup 114 so as to communicate the inside and outside of the treatment chamber 111. An exhaust for exhausting the treatment chamber 111 to less than atmospheric pressure is connected to the exhaust port 116. A wafer carry-in/carry out port 117 is formed in the other part of the side wall of the lower cup 114. A gate valve 118 for opening and closing the wafer carry-in/carry out port 117 is set in the wafer carry-in/carry out port 117. An insertion hole 119 is formed on the central line of the bottom wall of the lower cup 114. A gas supply line 121 connected to a gas supply apparatus 120 is piped on the central line of the insertion hole 119. A plurality of gas outlets 122 are formed in the upper end of the gas supply line 121 with intervals in the circumferential direction so as to radially jet a gas. A cylindrical rotary shaft 123 is concentrically arranged at the outside of the gas supply line 121, and is rotatably supported by a plurality of bearing apparatuses 124. The rotary shaft 123 is rotated and driven by a rotary driving apparatus 125. A base 130 having a slightly smaller diameter than that of the treatment chamber 111 and having a circular dish shape is horizontally supported at the upper end of the rotary shaft 123. The base 130 is rotatably supported by a bearing apparatus 129 set on the bottom surface of the lower cup 114. Four rotary shafts 131 are perpendicularly built at an equal interval in the circumferential direction on the concentric circle on the bottom wall of the base 130. The rotary shafts 131 are respectively and rotatably supported by the bearing apparatus 135, and each of planetary gears 132 of a planetary gear mechanism is fixed to the upper end of each of the rotary shafts 131. Four planetary gears 132 are engaged with a sun gear 133 fixed to an intermediate part of the gas supply line 121 so as to be freely rolled. Electrostatic chucks 134 for electrostatically attracting and holding the wafer 101 which is a substrate to be treated are respectively and horizontally set so as to be integrally rotated on the upper end surfaces of four planetary gears 132. A heater 140 which heats the wafer 101 of the treatment chamber 111 so as to transmit the transmission plate 115 is set in the upper cup 113. The heater 140 is provided with a plurality of heat lamps 141 in which tungsten-halogen lamps are formed in a circle line shape and a light reflector 142 for downwardly reflecting the heat of the heat lamp 141.

BRIEF SUMMARY OF THE INVENTION

However, although the plurality of heat lamps formed in a circle line shape has been used in the conventional heat treatment apparatus, a finer heating temperature control has been desired.

The present invention has been accomplished in view of the foregoing problems. It is an object of the present invention to provide a heating apparatus and semiconductor manufacturing apparatus which can carry out a fine heating temperature control easily.

In order to attain the above object, a heating apparatus of the present invention for heating a semiconductor substrate placed on a support arranged in a reaction chamber of a semiconductor manufacturing apparatus, includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction.

Herein, the orientation of the heat source lamp to the semiconductor substrate can be controlled for each of the heat source units by the heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction, and the heating temperature distribution of the semiconductor substrate can be controlled.

When each of the heat source units has a hexagonal outer shape in the heating apparatus of the present invention, the heat source units can cover a flat surface and heat a circular object efficiently. Also, the plurality of heat source units can be expanded on a circular semiconductor substrate or support without bringing about a large power loss. Furthermore, since the plurality of heat source units can be arranged adjacent to each other, a hexagonal heating element group which applies a desirable radiant flux pattern to the surface of the semiconductor substrate and the surface of the support can be formed.

When each of the heat source units has a light reflector which reflects light emitted from the heat source lamp in the heating apparatus of the present invention, heating using the light reflector can be carried out. Also, when the heat source lamp, which has a cylindrical shape, is substantially arranged parallel with the light reflector, a distance between the light reflector and the heat source lamp is easily adjusted.

When the distance between the heat source lamp and the light reflector can be adjusted in the heating apparatus of the present invention, the light reflected by the light reflector can be adjusted.

When the light reflector is covered with a gold film in the heating apparatus of the present invention, the light reflector shows high reflectance of light with a wavelength in an infrared region emitted from the heat source lamp.

When the light reflector is attachable and detachable, and is attachable by changing orientations in the circumferential direction; and the light reflector has a hexagonal outer shape in the heating apparatus of the present invention, the heating temperature distribution of the semiconductor substrate can be controlled by changing only the orientation of the light reflector without changing the orientation of the heat source lamp. In addition, since the orientation of the heat source lamp is not changed, labor for changing a structure for electric supply to the heat source lamp can also be saved.

When a partition wall is arranged between the heat source units in the heating apparatus of the present invention, the diffusion of the light can be suppressed, and the light can be concentrated on the semiconductor substrate.

Also, in order to attain the above object, a semiconductor manufacturing apparatus of the present invention includes a reaction chamber to which a reaction gas is supplied; a support arranged in the reaction chamber; and a heating apparatus which heats a semiconductor substrate placed on the support, wherein the heating apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction.

Herein, since the orientation of the heat source lamp to the semiconductor substrate can be controlled by the heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction, the heating temperature distribution of the semiconductor substrate can be controlled.

When each of the heat source units has a hexagonal outer shape in the semiconductor manufacturing apparatus of the present invention, the heat source units can cover a flat surface and heat a circular object efficiently. Also, the plurality of heat source units can be expanded on a circular semiconductor substrate or support without bringing about a large power loss. Furthermore, since the plurality of heat source units can be arranged adjacent to each other, a hexagonal heating element group which applies a desirable radiant flux pattern to the surface of the semiconductor substrate and the surface of the support can be formed.

When each of the heat source units has a light reflector which reflects light emitted from the heat source lamp in the semiconductor manufacturing apparatus of the present invention, heating using the light reflector can be carried out. Also, when the heat source lamp, which has a cylindrical shape, is substantially arranged parallel with the light reflector, a distance between the light reflector and the heat source lamp is easily adjusted.

When the light reflector is attachable and detachable, and is attachable by changing orientations in the circumferential direction; and the light reflector has a hexagonal outer shape in the semiconductor manufacturing apparatus of the present invention, the heating temperature distribution of the semiconductor substrate can be controlled by changing only the orientation of the light reflector without changing the orientation of the heat source lamp. In addition, since the orientation of the heat source lamp is not changed, labor for changing a structure for electric supply to the heat source lamp can also be saved.

When a distance between the heat source lamp and the light reflector can be adjusted in the semiconductor manufacturing apparatus of the present invention, the light reflected by the light reflector can be adjusted.

When the light reflector is covered with a gold film in the semiconductor manufacturing apparatus of the present invention, the light reflector shows high reflectance of light with a wavelength in an infrared region emitted from the heat source lamp.

When a partition wall is arranged between the heat source units in the semiconductor manufacturing apparatus of the present invention, the diffusion of the light can be suppressed, and the light can be concentrated on the semiconductor substrate.

The heating apparatus according to the present invention can carry out a fine heating temperature control easily.

The semiconductor manufacturing apparatus according to the present invention can carry out a fine heating temperature control easily.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view illustrating an aspect in which heat source lamps of a heating apparatus to which the present invention is applied are concentrically arranged.

FIG. 2 is a schematic view illustrating a second arrangement of heat source lamps in a heating apparatus to which the present invention is applied.

FIG. 3 is a schematic view illustrating a third arrangement of heat source lamps in a heating apparatus to which the present invention is applied.

FIG. 4 is a schematic view illustrating a light reflector used for heat source units of a heating apparatus to which the present invention is applied.

FIG. 5 is a schematic view illustrating an epitaxial growth apparatus to which the present invention is applied.

FIG. 6 illustrates a conventional heat treatment apparatus.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, an embodiment of the present invention will be described with reference to the drawings, and the embodiment is provided for understanding the present invention.

FIG. 1 is a schematic view illustrating an aspect in which heat source lamps of a heating apparatus to which the present invention is applied are concentrically arranged. In FIG. 1, a heating apparatus 1 is provided with a circular main body 2, and a plurality of heat source units 2A which are attachable and detachable to the circular main body 2, and are attachable by changing orientations in the circumferential direction. A partition wall 4 which is covered with a gold film and is made of aluminum is arranged between the heat source units 2A. Each of the plurality of heat source units is provided with a light reflector 2B which reflects light in an infrared region, is covered with a gold film, is made of aluminum and has a hexagonal outer shape, and four cylindrical heat source lamps (halogen lamp or the like) 3 both ends of which are inserted into holes formed in the light reflector 2B and which are substantially arranged parallel with each other and in an arch form. Each of the heat source lamps 3 is substantially arranged parallel with the light reflector 2B, and a distance between the heat source lamp 3 and the light reflector 2B can be adjusted so as to lengthen and shorten the distance. A cooling air port 1A is formed at the center of the main body 2.

Also, since the heat source lamps 3 arranged in each of the heat source units 2A are concentrically arranged to the center of the main body 2, eleven lamp rows are formed in a radial direction in FIG. 1. The heating temperature distribution of the support and the heating temperature distribution of the semiconductor substrate can be controlled by changing an electric current in each of the rows, and the heating temperature distribution of the semiconductor substrate can be made uniform.

Although examples of the heat source lamps include a halogen lamp herein, any heat source lamps may be used as long as they can heat the semiconductor substrate. For example, an infrared lamp may be used. As long as the partition wall and the light reflector are made of a material which can reflect light in an infrared region emitted from the heat source lamp, they may not be necessarily covered with the gold film and made of aluminum.

As long as the heat source unit has the heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction, the outer shape of the light reflector, i.e., the outer shape of the heat source unit may not be necessarily a hexagonal shape. For example, the outer shape may be an octagonal shape, and the outer shapes of all the heat source units may not be necessarily a hexagonal shape. The heat source units having the hexagonal shape and the other heat source units having the other shape, for example, the heat source units having a quadrangular shape or an octagonal shape may be used together.

As long as the heat source unit has the heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction, the light reflector may not be necessarily used, and for example, the outer shapes of the heat source units may be a hexagonal shape without using the light reflector.

As long as the heat source lamp is attachable and detachable, and being attachable by changing orientations in the circumferential direction, the heat source lamp may not necessarily have a cylindrical shape.

FIG. 2 is a schematic view illustrating a second arrangement of heat source lamps in a heating apparatus to which the present invention is applied. In FIG. 2, in each of the heat source units attached so as to extend in the right and left radial directions from the center of the main body 2, a CCD camera connecting port 5 for connecting a CCD camera for observing the reaction chamber of the semiconductor manufacturing apparatus, a quartz temperature measuring port 6 for connecting a thermometer for measuring a quartz temperature of a quartz glass plate for forming the reaction chamber, a first support temperature measuring port 7 for connecting a first thermometer for measuring the temperature of the support, and a second support temperature measuring port 8 for connecting a second thermometer for measuring the temperature of the support are formed.

Referring to the heat source units 2A attached so as to extend in six radial directions from the center of the main body 2, the heat source lamps 3 are arranged along the radial direction excluding the outermost thereof.

Herein, as long as each of the heat source units has heat source lamps which are attachable and detachable, and are attachable by changing orientations in the circumferential direction, the CCD camera connecting port, the quartz temperature measuring port, the first support temperature measuring port, and the second support temperature measuring port may not be necessarily formed. Also, at least one thereof may be formed.

FIG. 3 is a schematic view illustrating a third arrangement of heat source lamps in a heating apparatus to which the present invention is applied. In FIG. 3, all of the heat source lamps 3 of the heat source units 2A are arranged in the same direction.

While not shown in FIGS. 1 to 3, an electric control system is used at the back side of the light reflector 2B, and the electric control system supplies electric power to the heat source lamps of each of the heat source units.

As is apparent from FIGS. 1 to 3, the heat source lamps 3 can be rotated by 90 degrees in the heat source unit 2A by removing the heat source lamps 3, rotating the heat source lamps 3 by 90 degrees in the circumferential direction to change the orientations of the heat source lamps 3, and attaching the heat source lamps 3. Thereby, the fine heating temperature control can be carried out and the heating temperature distribution of the semiconductor substrate can be made uniform.

FIG. 4 is a schematic view illustrating a light reflector used for heat source units of a heating apparatus to which the present invention is applied. FIG. 4A is a plan view of the light reflector. FIG. 4B is a sectional view taken from line A-A of FIG. 4A. FIG. 4C is a sectional view showing a state where the arrangement of the heat source lamps is changed.

In FIG. 4A, the hexagonal light reflector 2B is detachably attached to the main body of the heating apparatus by fasteners 2E, and can be attached by changing orientations in the circumferential direction. Holes 2C into which the both ends of the heat source lamp 3 are inserted are formed.

As shown in FIG. 4B, four grooves 2D substantially extending in parallel with each other and having a cross section having a semi-circular arc shape are formed in the light reflector 2B, and the heat source lamps 3 are arranged along the grooves 2D.

As shown in FIG. 4C, the heat source lamps 3 are removed; the orientations thereof are changed in the circumferential direction, and the heat source lamps 3 are arranged across the grooves 2D having the cross section having the semi-circular arc shape.

While the example in which the grooves 2D having the cross section having the semi-circular arc shape are formed in the light reflector 2B is illustrated herein, the grooves may not be necessarily formed in the light reflector as long as the light reflector reflects the light in the infrared region. The light reflector may be flat, and the cross-sectional shape of the groove may not be necessarily the semi-circular arc shape. For example, the cross-sectional shape may be a V-shape.

FIG. 5 is a schematic view illustrating an epitaxial growth apparatus to which the present invention is applied. In FIG. 5, an epitaxial growth apparatus (one example of a semiconductor manufacturing apparatus) 9 is provided with a reaction chamber, a disk-shaped support 15 which is arranged in the reaction chamber and supports a plurality of semiconductor substrates (silicon substrate) 16, and a heating apparatus 1 arranged on both upper and lower sides of the support around the reaction chamber. The reaction chamber is constituted by pressing upper dome-shaped quartz glass plate 10 against lower dome-shaped quartz glass plate 10 with an upper clamp 11 made of stainless steel and a lower clamp 12 made of stainless steel and fixing them using screws. A reaction gas inlet 13 and a reaction gas outlet 14 are formed between the upper and lower dome-shaped quartz glass plates 10.

The heating apparatus 1 is a heating apparatus as shown in FIG. 1 or the like, and a rotating member 17, which is attached to the center of the support 15, rotates the support 15.

When the epitaxial growth is carried out using the epitaxial growth apparatus 9, a plurality of semiconductor substrates 16 are placed on the disk-shaped support 15 arranged in the reaction chamber. A reaction gas which contains trichlorosilane gas and hydrogen gas is introduced into the reaction chamber from the reaction gas inlet 13. The reaction gas containing the trichlorosilane gas and the hydrogen gas flows in the vicinity of the semiconductor substrate 16, and the reaction chamber is irradiated with light from the heating apparatus arranged around the reaction chamber. Thereby, the semiconductor substrate 16 is heated to carry out the epitaxial growth by the heat and the reaction gas.

While the example for placing the plurality of semiconductor substrates is mentioned herein, the plurality of semiconductor substrates may not be necessarily used as long as the semiconductor substrate can be heated by the heating apparatus, and one semiconductor substrate may be used.

While the example using the silicon substrate is mentioned, any substrate may be used as long as the epitaxial growth can be carried out. For example, a gallium arsenide (GaAs) substrate and a zinc telluride (ZnTe) substrate may be used. As long as an epitaxial layer can be grown on the substrate, any material gas may be used. For example, when the gallium arsenide substrate is used, a gas which contains Ga is used, and a gas containing Te is used when the zinc telluride substrate is used.

Next, an epitaxial growth process will be described.

First, the semiconductor substrate 16 is heated to 600 to 1200° C. by the heat source unit 2A of the heating apparatus 1, while rotating the support 15 which supports the semiconductor substrate 16 using the rotating member 17.

Next, the epitaxial growth is carried out by introducing the reaction gas containing the trichlorosilane gas and the hydrogen gas into the reaction chamber from the reaction gas inlet 13.

While the trichlorosilane gas is introduced into the reaction chamber as the material gas contained in the reaction gas herein, the material gas may be any gas as long as the material gas is a gas containing silicon atoms. For example, monosilane gas, dichlorosilane gas or silicon tetrachloride gas may be introduced into the reaction chamber.

As mentioned above, the example of the semiconductor manufacturing apparatus is the epitaxial growth apparatus, however, the example of semiconductor manufacturing apparatus is not necessarily the epitaxial growth apparatus, and the other example of the semiconductor manufacturing apparatus is an oxidation furnace, a CVD (chemical vapor deposition) apparatus or an RTP (rapid thermal processing) apparatus.

Thus, in the present invention, since each of the plurality of heat source units has the heat source lamps being attachable and detachable, and being attachable by changing orientations in the circumferential direction, the orientations of the heat source lamps to the semiconductor substrate can be controlled for each of the heat source units, and the heating temperature distribution of the semiconductor substrate can be controlled. Thereby, the fine heating temperature control can be easily carried out. Accordingly, the uniform heating temperature distribution of the semiconductor substrate and support can be realized.

Since each of the heat source units has the hexagonal outer shape, the heat source units can cover the flat surface and heat the circular object efficiently. Also, the plurality of heat source units can be expanded on the circular semiconductor substrate or support without bringing about a large power loss. Furthermore, since the plurality of heat source units can be arranged adjacent to each other, the hexagonal heating element group which applies the desirable radiant flux pattern to the surface of the semiconductor substrate and the surface of the support can be formed. Thereby, a zone control can be carried out in the areas of some semiconductor substrates. Accordingly, the present invention can contribute to realization of the uniform heating temperature distribution of the semiconductor substrate and support.

Since each of the heat source units has the light reflector which reflects the light emitted from the heat source lamp, heating using the light reflector can be carried out. Also, since the heat source lamp, which has the cylindrical shape, is substantially arranged parallel with the light reflector, the distance between the light reflector and the heat source lamp is easily adjusted. Thereby, the present invention can contribute to realization of the uniform heating temperature distribution of the semiconductor substrate and support.

When the distance between the heat source lamp and the light reflector can be adjusted, the light reflected by the light reflector can be adjusted.

Since the heat source lamps are arranged along the grooves having the cross section having the semi-circular arc shape, or the heat source lamps are arranged across the grooves, the heating temperature distribution of the semiconductor substrate can be changed. Thereby, the present invention can contribute to realization of the uniform heating temperature distribution of the semiconductor substrate and support.

Since the light reflector is covered with the gold film, the light reflector shows high reflectance of the light with the wavelength in the infrared region emitted from the heat source lamp.

Since the light reflector is attachable and detachable, and is attachable by changing orientations in the circumferential direction, and the light reflector has the hexagonal outer shape, the heating temperature distribution of the semiconductor substrate can be controlled by changing only the orientation of the light reflector without changing the orientation of the heat source lamp. In addition, since the orientation of the heat source lamp is not changed, labor for changing a structure for electric supply to the heat source lamp can also be saved.

Since the partition wall is arranged between the heat source units, the diffusion of the light can be suppressed, and the light can be concentrated on the semiconductor substrate.

Heating apparatus and semiconductor manufacturing apparatus

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CPC

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Description

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Priority Claims (1)