1. Field
Embodiments of the disclosure relate generally to the field of read-in integrated circuits (RIIC) for infrared emitters and more particularly to embodiments for a RIIC device that incorporates a “copper overlayer” process that serves the dual purpose of providing high supply and return current to the array of unit cells and also provides good thermal conduction to help keep the operating temperature of the circuitry cool.
2. Background
Infrared detection and imaging systems are being employed to sense temperature differences to create scenes displaying various objects. To accommodate testing of such systems, scene generators must be employed which provide high temperature emitters to accurately simulate inputs for test. In current devices a “suspended bridge” emitting device is attached to the RIIC. The large expense required to attach or otherwise deposit such suspended bridge technology contributes to the sales price of full infrared emitting systems to be over $1M. Also contributing to this price is the requirement that the technology incorporates patented subject matter requiring a license for the purpose of producing that patented emitting structure. Additionally, high temperature emitters typically require higher currents than can be provided by CMOS or other standard cell technologies employed in control and operation of RIIC based scene generators.
It is therefore desirable to provide RIIC unit cells which provide the capability to supply high currents required for high temperature emitters while using standard CMOS circuitry for control but at a reduced cost using simplified components. It is also desirable to provide a RIIC having high current output capability for enhanced emitter operation but provide thermal conduction for temperature control in the RIIC.
Exemplary embodiments provide a Read-In Integrated Circuit scene generator which incorporates an array of unit cells, with each cell having a switching control circuit. An array of emitting elements is associated with the unit cells and each element is connected with a lead to the switching control circuit of the associated cell. A first electrically conducting overlayer is deposited substantially covering the array of unit cells and connected for current supply. Each emitting element is connected to the first conducting overlayer and the first conducting overlayer includes vias through which each connecting lead from the emitting element to the switching control circuit extends. A second electrically conducting overlayer is deposited substantially covering the array of unit cells and connected for current return. Each switching control circuit is connected to the second conducting overlayer. The second conducting overlayer also has vias through which each lead from the emitting elements extends to the switching circuit.
In certain embodiments, the Read-In Integrated switching control circuits of the array are CMOS.
In an exemplary configuration, the first and second conducting overlayers are copper.
Additionally in certain embodiments, one or both of the conducting overlayers is thermally conductive.
The features, functions, and advantages that have been discussed can be achieved independently in various embodiments of the present invention or may be combined in yet other embodiments further details of which can be seen with reference to the following description and drawings
The embodiments described herein provide a high-current “Read-In Integrated Circuit” (RIIC) device that contains a large number of unit cell elements that will have the capability to be mated to “emitting” devices for use in infrared scene projection applications. As generally described in
The copper overlayers on the wafers of the RIIC die remove the voltage drops produced within the emitting core of previous high-current scene projection devices. Additionally, the presence of the highly thermally conductive copper overlayers on the RIIC effectively limit lateral thermal migration, thus limiting the local heating spatially resulting in a predominance of infrared radiation as opposed to lateral thermal diffusion from adjacent cells. In addition, the high thermal conductivity of the copper overlayers create a condition in which the copper overlayers act as a thermal shield, isolating the underlying CMOS circuitry from high levels of thermal radiation and excessive heating.
Having now described various embodiments of the invention in detail as required by the patent statutes, those skilled in the art will recognize modifications and substitutions to the specific embodiments disclosed herein. Such modifications are within the scope and intent of the present invention as defined in the following claims.
This application claims the priority of U.S. Provisional Application Ser. No. 61/246,230 filed on Sep. 28, 2010 having the same title as the present application.
Number | Date | Country | |
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61246230 | Sep 2009 | US |