HIGH ELECTROMECHANICAL COUPLING STRENGTH HOLLOW DISK RESONATORS

Abstract

System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling Cx/Co goes as the reciprocal of mass and stiffness, the hollow disk structure has a considerably stronger electromechanical coupling than a solid one at the same frequency, and thus raises Cx/Co without excessive gap-scaling. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations.

Description

NOTICE OF MATERIAL SUBJECT TO COPYRIGHT PROTECTION

A portion of the material in this patent document may be subject to copyright protection under the copyright laws of the United States and of other countries. The owner of the copyright rights has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the United States Patent and Trademark Office publicly available file or records, but otherwise reserves all copyright rights whatsoever. The copyright owner does not hereby waive any of its rights to have this patent document maintained in secrecy, including without limitation its rights pursuant to 37 C.F.R. § 1.14.

BACKGROUND

1. Technical Field

The technology of this disclosure pertains generally to microelectromechanical system (MEMS) resonators, and more particularly to hollow-disk MEMS resonators.

2. Background Discussion

The growing need for high performance and wide bandwidth handheld mobile devices capable of operating at various communication bands has spurred the use of microelectromechanical system (MEMS) resonators having simultaneous high resonance frequency (f_o), high quality factor (Q) and high electromechanical coupling, as gauged by the motional-to-static capacitive ratio (C_x/C_o). These well-known but mostly competing requirements have driven research efforts on different transduction mechanisms. Among these, piezoelectric and film bulk acoustic resonators (FBAR) have achieved electromechanical coupling coefficients larger than 6%, but their Qs are smaller than desired.

Capacitive-gap transduced resonators have provided some of the highest disk C_x/C_o-Q products to date at high frequency (HF) and low to very high frequency (VHF). Attaining similar performance at the high-VHF and ultra-high frequency (UHF) ranges, however, is more difficult, as it requires either high voltage or electrode-to-resonator gaps considerably smaller than previously demonstrated.

BRIEF SUMMARY

One aspect of the present description is a system and method that raises C_x/C_o without excessive gap-scaling or high voltage by hollowing out a disk resonator structure, which reduces the dynamic mass and stiffness of the structure. Since C_x/C_o goes as the reciprocal of mass and stiffness, a hollow disk can have considerably stronger electromechanical coupling than a solid one at the same frequency. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations.

In one embodiment, mass and stiffness reduction is achieved from hollowing out a capacitive-gap transduced radial mode disk resonator, while maintaining resonance frequency and transduction area. This has enabled a measured electromechanical coupling strength (C_x/C_o) of 0.75% at 123 MHz without the need to scale the device's meager 40-nm electrode-to-resonator gap, resulting in nearly a 7-fold improvement in C_x/C_o compared with a conventional radial contour-mode disk at the same frequency, same dc bias, and same gap. Such an increase in C_x/C_o improves the passbands of channel-select filters targeted for low power wireless transceivers, as well as lower the power consumption of MEMS-based oscillators.

A fabrication process is also disclosed that deviates only slightly from a standard disk resonator process.

In an asymmetric hollow disk, a thin sidewall ring protrudes upward from the edges of an inner disk that itself anchors to the substrate via a center stem. The inner disk still vibrates in the radial contour mode in the radial direction. The sidewall vibrates in a radial cantilever mode, which boosts C_x/C_o even higher.

In a symmetric hollow disk, the sidewall ring protrudes in both upwards and downwards directions along the inner disk edges. With a small stem anchor, the symmetry eliminates vertical vibration nonidealities, allowing for even better performance.

Further aspects of the technology described herein will be brought out in the following portions of the specification, wherein the detailed description is for the purpose of fully disclosing preferred embodiments of the technology without placing limitations thereon.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING(S)

The technology described herein will be more fully understood by reference to the following drawings which are for illustrative purposes only:

FIG. 1 is a plot illustrating simulated two-resonator filter frequency response curves.

FIG. 2 is a perspective schematic view of an asymmetric hollow radial-mode disk resonator in accordance with the present description.

FIG. 3 is a sectional side view of the asymmetric hollow radial-mode disk resonator of FIG. 1.

FIG. 4 is a sectional side view of an alternative symmetric hollow radial-mode disk resonator.

FIG. 5 is a sectional side view of a wide-stem symmetric hollow radial-mode disk resonator.

FIG. 6A and FIG. 6B show FEA-simulated mode shapes for the asymmetric hollow disk resonator for fully expanded and fully contracted modes, respectively.

FIG. 7 is a schematic circuit diagram of a transformer-based equivalent circuit (including substrate parasitics) for a hollow disk resonator in a one-port drive and sense scheme.

FIG. 8 is a schematic circuit diagram of an impedance-explicit equivalent circuit (including substrate parasitics) for a hollow disk resonator in a one-port drive and sense scheme.

FIG. 9 is a plot showing a comparison of conventional and hollow disk electromechanical coupling as gauged by C_x/C_o for varying values of H/h at different dc-bias voltages.

FIG. 10 is a plot showing hollow disk electromechanical coupling as gauged by C_x/C_o for varying values of H/h at different dc-bias voltages and with two different gap spacings.

FIG. 11 is a plot showing a comparison of conventional and hollow disk motional resistance for varying values of H/h at different dc-bias voltages.

FIG. 12A shows a schematic cross-sectional side view for the interconnect layer etch step of a fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 12B shows a schematic cross-sectional side view for the sacrificial spacer etch step of the fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 12C shows a schematic cross-sectional side view for the planar structural etch step of the fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 12D shows a schematic cross-sectional side view for the sidewall structural layer deposition step of the fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 12E shows a schematic cross-sectional side view for the sidewall structural layer etch step of the fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 12F shows a schematic cross-sectional side view for the gap spacer deposition and anchor etch step of the fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 12G shows a schematic cross-sectional side view for the electrode layer patterning step of the fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 12H shows a schematic cross-sectional side view for the HF release step of the fabrication process flow for the asymmetric hollow disk resonator of FIG. 2 and FIG. 3.

FIG. 13A through FIG. 13F show schematic cross-sectional side views of a fabrication process flow for the symmetric hollow disk resonator of FIG. 4.

FIG. 14 shows images of wide-view and zoom-in SEM's of a fabricated polysilicon hollow disk resonator.

FIG. 15A shows a plot of measured frequency response curves for a 123-MHz hollow disk resonator as a function of dc bias voltage along with C_x/C_o values,

FIG. 15B is a plot of resonance frequency f_o plotted against dc-bias voltage V_P.

FIG. 15C is a plot of quality factor measurement for varying dc-bias voltages V_P.

FIG. 15D is a pot of electromechanical coupling strength C_x/C_o (or k_t²) times quality factor figure of merit (FOM) plotted against dc-bias voltage V_P with and without parasitics.

FIG. 16 is an image of the finite-element simulated mode shape for the hollow disk resonator, but without vertical motion constraints. The simulation clearly shows transverse (vertical) displacements that likely radiate energy into the stem anchor and subsequently to the substrate.

DETAILED DESCRIPTION

The small electromechanical coupling C_x/C_o of existing capacitive-gap transduced resonators at higher frequency complicates realization of radar oscillators and wider bandwidth filters. The systems and methods of the present description are directed to reducing the dynamic mass and stiffness of the resonator disk structures to raise C_x/C_o. FIG. 1 illustrates how raising C_x/C_o from 0.11% to 0.56% corrects the passband distortion in a 123-MHz, 600-kHz bandwidth micromechanical filter.

1. Hollow-Disk Resonator Structure

FIG. 2 shows a perspective view of an asymmetric hollow-disk 12 radial contour-mode disk resonator 10 in a one-port drive and sense configuration. FIG. 3 shows a cross-section view of the resonator 10 of FIG. 2. A small signal voltage V_drive atop dc-bias voltage V_P creates a dynamic electrostatic force in the air gap 20 (d_o) between the disk 12 edge and output electrode (drive electrode) 22 that drives the disk 12 into motion, with sizable displacement amplitudes ensuing when the drive frequency is at the disk resonance frequency. Sense electrode 24 is coupled for output to network analyzer 26.

The resultant change in the overlap capacitance C_o then creates an output current across the dc-biased time-varying capacitive gap that allows electrical detection of the device response. For a 123-MHz solid disk resonator design, with 22 μm radius and 40 nm gap, the typical output current with a Q of 20,000 is on the order of 17 ρA for a V_P and V_drive of 10V and 10 mV, respectively.

The resonance frequency of a solid radial contour-mode disk takes the form:

$\begin{array}{cc}{f}_o=\frac{K_{mat}}{2R}\sqrt{\frac{E}{\rho }}& \mathrm{Eq}.1\end{array}$

where R is the disk radius, K_mat is a parameter dependent upon material properties (0.654 for polysilicon), and E and ρ are the Young's modulus and Poisson ratio, respectively, of the structural material.

Pursuant to obtaining an expression for the electromechanical coupling, the motional capacitance takes the form:

$\begin{array}{cc}{C}_x=\frac{{\eta }_e^2}{k_m}=\frac{{\eta }_e^2}{{\omega }_o^2m_m}& \mathrm{Eq}.2\end{array}$

where k_m is effective mechanical stiffness, mm is equivalent mass, ω_o is radian resonance frequency, and η_e is electromechanical turns ratio given as:

$\begin{array}{cc}{\eta }_e=V_P\frac{C_o}{d_o}=V_P\frac{{\varepsilon }_oA_o}{d_o^2}& \mathrm{Eq}.3\end{array}$

where V_P is dc-bias voltage, ε_o is free space permittivity, A_o is electrode-to-resonator overlap area, and do is electrode-to-resonator gap.

Substituting Eq. 3 into Eq. 2 and dividing by overlap capacitance C_o yields the C_x/C_o expression for a radial contour-mode disk in terms of mechanical and electrical design parameters:

$\begin{array}{cc}\frac{C_x}{C_o}=\frac{V_P^2}{k_m}\frac{{\varepsilon }_oA_o}{d_o^3}=\frac{V_P^2}{{\omega }_o^2m_m}\frac{{\varepsilon }_o2\pi {\mathrm{RH}}_d}{d_o^3}& \mathrm{Eq}.4\end{array}$

where H_d is disk thickness.

Eq. 4 shows that for a given frequency a reduction in stiffness k_m generally implies a simultaneous reduction in mass m_m. In other words, to attain higher C_x/C_o, mass may be removed.

As shown in FIG. 2 and FIG. 3, disk 12 is asymmetrically hollowed at depth H and radius (R−t) to generate a cylindrical void 18 at the center of the disk, forming an outer circumferential wall 16 having thickness t and bottom height or thickness h. Disk 12 is coupled to the polysilicon interconnect layer 28 via stem 14.

An asymmetric hollow disk (asymmetry is in the vertical direction in FIG. 3) tends to vibrate both radially and transversely. The transverse vibration of the inner disk introduces an extra dynamic mass moving in the vertical direction in the mechanical domain, which may affect the Q of the resonator by raising loss. A symmetric hollow disk can eliminate this nonideality.

FIG. 4 is a schematic side section view of a symmetrically-hollow radial contour-mode disk resonator 10a with a fully surrounded drive electrode 22a. In this symmetric structure, upper and lower cylindrical voids 18a are generated at the center of the disk 12a (lower void 18a is annular due to stem 14a), creating a sidewall ring 16a that protrudes in both upwards and downwards directions along the inner disk edges. Disk 12a is coupled to the polysilicon interconnect layer 28a via stem 14a. Interconnect layer 28a is disposed on additional substrate layers comprising a SiN (Si₃N₄) layer 30, SiO₂ layer 32 and Si layer 34. A similar substrate layer structure incorporating layers 30, 32 and 34 may be disposed below the interconnect layer 28 of resonator 10 shown in FIG. 2 and FIG. 3. As shown in FIG. 4, the hollow disk 12 a is substantially symmetric in the vertical direction z.

FIG. 5 is a schematic side section view of an alternative symmetrically-hollow radial contour-mode disk resonator 10b with wide or hollow stem 14b and fully surrounded drive electrode 22b. Upper and lower cylindrical voids 18b are generated at the center of the disk 12b (lower void 18b is annular due to stem 14b), creating a sidewall ring 16b that protrudes in both upwards and downwards directions along the inner disk edges. Stem 14b has a radius R_st that is widened via use of an additional radial cavity below upper cavity 18b. Disk 12a is coupled to the polysilicon interconnect layer 28b via stem 14b. Interconnect layer 28b is disposed on additional substrate layers comprising a SiN (Si₃N₄) layer 30, SiO₂ layer 32 and Si layer 34.

The resonator structures (12, 12a, ad 12b) of the resonators 10, 10a and 10b shown in FIG. 2 through FIG. 5 are depicted as a circular disk in radial contour mode. While the circular shape and ring-shaped outer ring are preferred resonator structures in that the provide a robust structure with minimal mass at the periphery of the disk, it is appreciated that the resonator structure may comprise any shape, size or configuration. Any number, shape or size of cavities (e.g. in addition to or in replace of cavities 18, 18a and 18b) may be used to reduce the mass of the resonator structures. For example, the resonator structures 12, 12a and 12b may comprise a porous structure comprised of many small cavities of various or uniform sizing. Furthermore, the resonators 10, 10a and 10b may be configured to operate in whispering gallery mode or wine-glass mode as available in the art.

Furthermore, the resonators 10, 10a and 10b shown in FIG. 2 through FIG. 5 are depicted as having a drive electrode and a sense electrode. It is appreciated that these electrodes, or terminals, may be altered such that they are switched in position, the resonator structure itself acts as an electrode or terminal, and other electrode/terminal configurations and groupings may be used.

Referring back to FIG. 2, the hollow disk resonator 10 combines a regular (but very thin) bottom disk thickness h and of radius R with a high-aspect-ratio circular edge ring of width of t to provide more coupling to the electrodes. Mechanically, the bottom disk thickness h sets the stiffness, while the edge ring increases or maintains electrode-to-resonator overlap area while minimizing mass, thereby lowering the resonance frequency, which takes the form:

$\begin{array}{cc}{f}_{oh}=\left\{\frac{K_{mat}}{2R}\sqrt{\frac{E}{\rho }}\right\}\frac{1}{\sqrt{1+\Delta m/m_{mh}}}& \mathrm{Eq}.5\end{array}$

where the term in the bracket is the resonance frequency of a radial-contour mode disk as given in Eq. 1, m_mh and Δm are the equivalent dynamic disk mass at an edge location and the additional mass loading from the edge ring, respectively, given by:

m _mh =χρπR ² h  Eq. 6

Δm=ρ2πRtH  Eq. 7

Here χ is a factor relating the physical mass of the disk to its dynamic mass, which at the edge of a radial contour-mode resonance shape equals 0.763.

Substituting Eq. 6 and Eq. 7 into Eq. 5 leads to:

$\begin{array}{cc}{f}_{oh}=\left\{\frac{K_{mat}}{2R}\sqrt{\frac{E}{\rho }}\right\}{\left\{1+\frac{2}{\chi }\frac{t}{R}\frac{H}{h}\right\}}^{-1/2}& \mathrm{Eq}.8\end{array}$

The vertically-constrained finite element analysis (FEA)-simulated mode shape in FIG. 6A and FIG. 6B does indeed resemble the mode shape of a conventional radial-contour mode disk with added mass near its edges, confirming the logic behind Eq. 5.

FIG. 7 and FIG. 8 show schematic circuit diagrams of a transformer-based equivalent circuit 50 and an impedance-explicit equivalent circuit 52 respectively (including substrate parasitics) for a hollow disk resonator 10 in a one-port drive and sense scheme. In FIG. 7, 56 is the electromechanical interface, C_oh is the overlap capacitance, −C_oh is the spring softening, C_pad is the bond pad capacitance, and R_subs is the substrate resistance.

Referring to the circuit schematic diagrams of FIG. 7 and FIG. 8, the hollow disk motional capacitance C_xh takes the form:

$\begin{array}{cc}{C}_{xh}=eta_{Eh}^2c_{xh}=\frac{{\eta }_{eh}^2}{k_{mh}}=\frac{V_P^2}{d_o^4}\frac{4{\varepsilon }_o^2{R^2\left(H+h\right)}^2}{\mathrm{\pi \chi }K_{mat}^2Eh}\left\{1+\frac{2}{\chi }\frac{t}{R}\frac{H}{h}\right\}& \mathrm{Eq}.9\end{array}$

where η_eh and k_mh are hollow disk electromechanical turns ratio and effective mechanical stiffness, respectively.

Using Eq. 9 in conjunction with the other equivalent circuit parameters summarized in FIG. 7 and FIG. 8 yields the following expression for the electromechanical coupling factor as gauged by C_xh/C_oh:

$\begin{array}{cc}\frac{C_{xh}}{C_{oh}}=\left\{\frac{V_P^2}{d_0^3}\frac{2{\varepsilon }_oR}{{\pi }^2\chi K_{mat}^2E}\right\}\left\{1+\frac{H}{h}\right\}\left\{1+\frac{2}{\chi }\frac{t}{R}\frac{H}{h}\right\}& \mathrm{Eq}.10\end{array}$

The first term in Eq. 10 is the C_x/C_o for a solid disk resonator, i.e., H=0. The next two terms are always greater than 1, so this provides a path towards larger electromechanical coupling via hollowing. In particular, the second term is linearly proportional to the ratio of H to the disk thickness h and offers a very convenient design knob. To better elucidate this, FIG. 9 compares plots of C_x/C_o vs. H/h for 20-m-radius solid and hollow disks using Eq. 10, with V_P's of 5V, 10V, and 20V. FIG. 10 shows similar plots for the hollow disk resonator for two different gap spacings, i.e., 40 nm and 80 nm. The design parameters for both plots are: R=20 μm, t=500 nm, E=158 GPa, ρ=2300 kg/m³, K_mat=0.654, and χ=0.763. With typical values of H=2.5 μm and h=0.5 μm, the hollow disk design boosts C_x/C_o by 8 times over a conventional solid disk. An even more aggressive design with H/h=10 achieves almost 18 times improvement in C_x/C_o over its conventional counterpart.

Motional resistance Rx also benefits from hollowing out the disk structure as reduced mass leads to less mechanical damping, and hence less Rx for a given electromechanical turns ratio η_eh. Expressing hollow disk motional resistance in terms of the design parameters given in FIG. 7 and FIG. 8 yields:

$\begin{array}{cc}{R}_{xh}=\frac{r_{xh}}{{\eta }_{eh}^2}=\frac{\chi K_{mat}\sqrt{E\rho }d_o^4h}{4Q{\pi }^2V_p^2{\varepsilon }_o^2{R\left(H+h\right)}^2}\left\{1+\frac{2}{\chi }\frac{t}{R}\frac{H}{h}\right\}& \mathrm{Eq}.11\end{array}$

where r_xh is mechanical damping and Q is quality factor. FIG. 11 compares motional resistances achieved by a hollow disk and conventional solid design with a thickness H_d=H+h at different dc-bias voltages for varying H/h ratios. The design parameters for FIG. 11 are: R=20 μm, d_o=40 nm, Q=10,000, h=0.5 μm, t=500 nm, E=158 GPa, ρ=2300 kg/m³, K_mat=0.654, and χ=0.763. For a typical value of h=0.5 μm, the hollow disk design achieves 4.5 and 6.6 times smaller motional resistance than its conventional counterpart with H_d=3 μm and H_d=5.5 μm, respectively.

2. Fabrication

FIG. 12A through FIG. 12H show schematic cross-sectional side views of a fabrication process flow for the asymmetric hollow disk resonator 10 of FIG. 2 and FIG. 3. In a preferred embodiment, the hollow disk cross-section in FIG. 3 utilizes a similar sequence of surface-micromachining depositions as used in a conventional disk process, but with different thicknesses and etch ordering.

Referring to FIG. 12A, the fabrication process starts with successive depositions of 2 μm-thick low temperature oxide (LTO) (layer 32) at 450° C. and 500 nm-thick low stress nitride layer 30 at 835° C., both via low-pressure chemical vapor deposition (LPCVD), to serve as isolation layers over a lightly doped p-type silicon starting wafer 34. LPCVD polycrystalline silicon then follows at 590° C. for 8 hours to achieve a 3-μm-thick interconnect layer film 28, subsequently doped in a POCl₃ furnace for 1 hour at 1050° C. After patterning photoresist with a first mask, deep reactive ion etching (DRIE) using an SF₆ chemistry delineates the interconnect layer 28 as depicted in FIG. 12A. Planarization then follows via deposition of 4 μm-thick phospho-silicate glass (PSG), re-flow of PSG at 950° C. for 30 min, and chemical mechanical polishing (CMP) down to the polysilicon to leave a flat surface that facilitates subsequent processing.

Referring now to FIG. 12B, hollow device fabrication then begins with a 500 nm PSG deposition at 450° C. to serve as a bottom sacrificial spacer 36 between the structural and interconnect layer 28, as well as an additional dopant source to further reduce the sheet resistance of the interconnect traces. Next, lithography through a second mask delineates the stem hole and reactive ion etching (RIE) using an Ar:CHF₃:CF₄ chemistry opens the hole in layer 36, as shown in FIG. 12B.

Referring now to FIG. 12C, the hollow disk fabrication deviates from the conventional solid disk process flow. Instead of depositing a thick layer of structural polysilicon, e.g. 3 μm, the process of the present description uses a much thinner 500 nm-thick LPCVD polysilicon structural layer 38 at 590° C., followed by a 2.5 μm-thick PSG deposition layer 40 at 450° C. This polysilicon serves as material for the bottom disk structure while also filling the stem hole to form the stem 14. Lithography then delineates the disk edges and RIE using an Ar:CHF₃:CF₄ chemistry cuts through the oxide to form a mold to define the eventual hollow disk structure. The oxide also serves as a hard mask for the subsequent structural polysilicon etch, which uses a Lam TCP 9400SE polysilicon RIE etch recipe with gas flow rates of 140 sccm of HBr, 14 sccm of Cl₂, and 5 sccm of O₂ at 12 mTorr pressure with 250 W and 75 W RF and wafer bias powers, respectively. At this point, the cross section is as in shown in FIG. 12C.

Referring now to FIG. 12D and FIG. 12E, conformal deposition of 500 nm LPCVD polysilicon at 590° C. and blanket etching are shown respectively to form the sidewall structural layer 38. The forming of layer 38 around and over the sacrificial deposition layer 40 forms a molded polysilicon side wall. LPCVD of high temperature oxide (HTO) at 920° C. using 40 sccm of DCS and 100 sccm of N₂O flow with 600 mTorr process pressure deposits the sidewall sacrificial oxide that defines the eventual 37 nm electrode-to-resonator gap.

Lithography followed by an Ar:CHF₃:CF₄ RIE etches electrode anchor openings to yield the cross-section of FIG. 12F.

After a blanket LPCVD deposition of 3 μm-thick polysilicon for 8 hours and POCL₃ doping for 1 hour at 590° C. and 1050° C., respectively, the final lithography and DRIE using an SF₆ chemistry define the electrodes in layer 42 and yield the cross-section in FIG. 12G which is ready for release. The release process employs 49% liquid HF to free the disk structure and achieve the final cross-section of FIG. 12H.

Table 1 shows detailed steps for an exemplary fabrication process for an asymmetric hollow disk according to the fabrication process depicted in FIG. 12A through FIG. 12H.

FIG. 13A through FIG. 13F show schematic cross-sectional side views of a fabrication process flow for the symmetric hollow disk resonator 10A of FIG. 4, illustrating interconnect layer film 28a, bottom sacrificial spacer 36a polysilicon structural layer 38a, PSG deposition layer 40a, and electrode layer 42a on top of the substrate layers 30, 32 and 34.

Table 2 shows detailed steps for an exemplary fabrication process for a symmetric hollow disk according to the fabrication process depicted in FIG. 13A through FIG. 13F. The process flow steps for the symmetric hollow disk resonator 10A (FIG. 13A-FIG. 13F and Table 2) are largely similar to the process flow steps for the asymmetric hollow disk resonator 10 (FIG. 12A-FIG. 12H and Table 1), with the exception that the process flow for the symmetric hollow disk resonator 10A includes an extra step of timed etch (i.e., step b-3 in Table 2). Since industrial applications usually avoid timed etch because of difficulties in controlling the uniformity of the etch rate throughout the wafer and from wafer to wafer, an optimized alternative process may add a thin layer as etch stop in the thick silicon dioxide.

FIG. 14 shows an SEM image of a fabricated and released hollow disk resonator in accordance with the asymmetric hollow disk resonator 10 of FIG. 2 and FIG. 3, with expanded views of the edge ring, gap, and overlapping I/O electrodes. Tables 3 and 4 summarize asymmetric hollow-disk performance under various operating conditions, e.g., voltages.

Table 5 provides a comparison summary of detail design and equivalent circuit variables of an exemplary 80 MHz asymmetric hollow disk and a 80 MHz solid disk, including geometric dimensions of the structure (e.g., R, H, h, t, and d_o) and variables from test results (e.g., V_P, Q, f_nom, and f_o). In this exemplary configuration, the mechanical inductance (I_x) of the hollow disk is only 38% of the solid disk. The electromechanical coupling ratio (η_e) of the hollow disk is 66% higher than the solid one. As a result, the motional-to-static capacitive ratio C_x/C_e can be boosted by approximately 25 times and the motional resistance (R_x) is 7.5 times smaller.

Table 6 provides a comparison summary of detail design and equivalent circuit variables of an exemplary 128 MHz symmetric hollow disk and a 128 MHz solid disk, including geometric dimensions of the structure (e.g., R, H, h, t, and d) and variables from test results (e.g., V_P, Q, f_nom, and f_o). The dynamic mass of the hollow disk is only 27% of the original in the solid disk. As a result, the hollow disk can boost C_x/C_o by approximately four times and lower the motional resistance (R_x) by 3.7 times.

Table 7 provides a comparison summary of detail design and equivalent circuit variables of an exemplary device with a large stem having a radius of 8 μm, including geometric dimensions of the structure (e.g., R, H, h, t, and d_o) and variables from test results (e.g., V_P, Q, f_nom, and f_o).

3. Measurement Results

A Lakeshore FWPX Vacuum Probe Station housing hollow disk resonators maintained a vacuum pressure of 50μTorr during testing. Probes accessed the devices, delivering the excitation signal and sensing their output currents, which they directed to the 50Ω input terminal of a sense amplifier, then to the input of an Agilent E5071C vector network analyzer.

FIG. 15A presents measured frequency response curves for a 123-MHz hollow disk resonator at various dc-bias voltages V_P under 50 μTorr vacuum with R=20 μm, H=2.5 μm, h=0.5 μm, t=500 nm, and stem radius R_s=1 μm. Here, as FIG. 15B depicts, a curve-fitting method using resonant frequency versus dc-bias voltage data of FIG. 15A accurately extracts the electrode-to-edge ring gap d_o and nominal resonant frequency f_nom as 37.02 nm and 123.06 MHz, respectively.

a. Electromechanical Couplinq Strength, C_x/C_o

One approach to measuring electromechanical coupling strength C_x/C_o employs parallel and series resonance frequencies, f_p and f_s as indicated in FIG. 15A respectively. Ignoring (for now) the parasitic bond pad capacitances C_pad in FIG. 8 and solving for the input impedance yields:

$\begin{array}{cc}{f}_s=\frac{1}{2\pi \sqrt{L_x\left(C_x//-C_o\right)}},f_p=\frac{1}{2\pi \sqrt{L_xC_x}}& \mathrm{Eq}.12\end{array}$

Here, the parallel resonance occurs at the nominal resonance frequency f_nom and electrical stiffness pulls the series resonant frequency down, separating the two frequencies. Rearranging the expressions in Eq. 12 and isolating C_x/C_o yields:

$\begin{array}{cc}\frac{C_x}{C_o}=1-{\left(\frac{f_s}{f_p}\right)}^2.& \mathrm{Eq}.13\end{array}$

Using Eq. 13 directly on the data, C_x/C_o values rise from 0.17% at V_P=5V to 0.56% at V_P=9.5V, the latter of which is 5 times larger than the 0.11% expected for a 3-μm-thick conventional solid radial-contour mode disk with the same gaps and bias voltage. The benefits to filter performance are clear from FIG. 1.

As previously mentioned, however, Eq. 13 yields the intrinsic device C_x/C_o only if parasitic capacitances are negligible compared with the overlap shunt capacitance C_o. In other words, it works well only when the device feedthrough capacitance is large, which is the case for most piezoelectric resonators. Capacitive-gap transducers generally have much smaller C_o than piezoelectric ones, which can be problematic when the MEMS-to-transistor interface has large shunt capacitance, but for small interface capacitance permits substantially lower power operation.

Given that the present hollow disk device is capacitive-gap transduced, the bond pads shown in FIG. 8 incur parasitic capacitances C_pad comparable with the device's overlap shunt capacitance C_o. For example, a 60 μm×60 μm bond pad alone has 54.9 fF of shunt capacitance C_pad through the 500 nm nitride 30 and 2 μm oxide 32 layers, while the overlap capacitance C_o for the device measured in FIG. 15A is 90.2 fF. In this case, use of Eq. 13 yields not the intrinsic C_x/C_o of the device in question, but rather the C_pad-loaded value (which of course is a useful quantity in itself).

To extract out the intrinsic C_x/C_o, one can re-derive it, but this time considering the bond pad capacitors in FIG. 8 and noting that the substrate resistance R_subs connecting them has comparably negligible impedance at the frequency of operation, i.e., 123 MHz. Doing so, the expressions for the parasitic-encumbered parallel and series resonance frequencies become:

$\begin{array}{cc}{f}_s^{\prime }=\frac{1}{2\pi \sqrt{L_x\left(C_x//-C_o\right)}}& \mathrm{Eq}.14\\ f_p^{\prime }=\frac{1}{2\pi \sqrt{L_xC_x\frac{2C_o+C_{pad}}{2C_o+C_{pad}\left(1-C_x/C_o\right)}}}.& \mathrm{Eq}.15\end{array}$

With the inclusion of parasitics, the parallel resonance dip slightly shifts to the left, whereas the series resonant frequency behaves as for the case without parasitics. Rearranging Eq. 14 and Eq. 15 and expressing C_x/C_o in terms of the parasitic-encumbered parallel and series resonance frequencies, f_p′ and f_s′, yields:

$\begin{array}{cc}\frac{C_x}{C_o}=\alpha \frac{2C_o+C_{pad}}{2C_o+\alpha C_{pad}}\mathrm{where}\alpha =1-{\left(\frac{f_s^{\prime }}{f_p^{\prime }}\right)}^2.& \mathrm{Eq}.16\end{array}$

Using Eq. 16 with C_pad=54.9 fF, C_o=90.2 fF, and V_P=9.5V curve in FIG. 15A produces an intrinsic C_x/C_o value of 0.72%, which is substantially better than 0.56% obtained via Eq. 13.

Although Eq. 16 provides invaluable insight into the effect of parasitics on electromechanical coupling strength, accurately calculating C_pad is not a straightforward task. A more direct method to extract C_x/C_o would be better.

Interestingly, the expressions for series resonance frequency in Eq. 12 and Eq. 15 are identical. This suggests that series resonance frequency is impervious to bond pad parasitics, hence might be a better starting point to determine C_x/C_o. As depicted in FIG. 15B, this frequency f_o is a strong function of dc-bias voltage V_P, mainly due to electrical stiffness, which influences it according to:

$\begin{array}{cc}{f}_o=f_{nom}\sqrt{1-\frac{k_e}{k_m}}=f_{nom}\sqrt{1-\frac{C_x}{C_o}}& \mathrm{Eq}.17\end{array}$

where f_nom is nominal (i.e., zero bias) resonance frequency, k_e and k_m are the electrical and mechanical stiffnesses, respectively.

The terms k_e and k_m take the form:

$\begin{array}{cc}{k}_e=\frac{{\eta }_e^2}{C_o},k_m=\frac{{\eta }_e^2}{C_x}& \mathrm{Eq}.18\end{array}$

Manipulation of Eq. 18 shows that (k_e/k_m)=(C_x/C_o). Rearrangement of Eq. 17 yields an alternate C_x/C_o expression:

$\begin{array}{cc}\frac{C_x}{C_o}=1-{\left(\frac{f_o}{f_{nom}}\right)}^2& \mathrm{Eq}.19\end{array}$

Eq. 19 which now provides the intrinsic device electromechanical coupling strength even in the presence of bond pad (or other) parasitics. Note that the curve-fitting method used to extract the electrode-to-edge ring gap d_o in FIG. 15B also extracts f_nom.

Now using Eq. 19, C_x/C_o values rise from 0.21% at V_P=5V to 0.75% at V_P=9.5V, the latter of which is almost 7 times larger than the 0.11% for a conventional solid radial-contour mode disk with the same gaps.

b. Quality Factor, Q

FIG. 15C plots quality factor Q at various dc-bias voltages. The measured Q of 2,271 at V_P=9.5V is well short of the >10,000 often seen for capacitive-gap transduced polysilicon devices. High film electrical resistance could be one cause of this. The problem could also stem from larger surface loss mechanisms, given the higher surface-to-volume ratio of this device.

On the other hand, anchor loss is another likely reason for lower than expected Q. In particular, lifting the vertical constraint of the finite-element mode shape simulations of FIG. 6A and FIG. 6B yields that in FIG. 16, which clearly shows transverse (vertical) displacements that likely radiate energy into the stem anchor and subsequently to the substrate. A more symmetric design, with edge rings both above and below the thin disk structure as shown in FIG. 4 or FIG. 5, is one solution to this problem.

Even with these Q issues, the k_t²-Q value of 17 as plotted in FIG. 15D for the resonator of FIG. 2 and FIG. 3 is significant compared with some of the best piezoelectric alternatives.

In sum, the hollowing-based increase in C_x/C_o to 0.75% at 123 MHz is impressive, given that it does not require gap scaling. When combined with gap scaling, some very large C_x/C_o values may be achieved. Combined with the Q's in the 3,000 range (and possibly over 50,000, which is more common for these types of resonators), such C_x/C_o's may enable both narrow- and wide-band front-end filters for communications and very low power, low-noise oscillators. The C_x/C_o increases of the present technology improve the passbands of channel-select filters that may be implemented for low power wireless transceivers, as well as lowering the power of MEMS-based oscillators.

Reasonable expectation that the Q of hollow resonator devices will increase to a value more appropriate for capacitive-gap transduced resonators, e.g., 20,000 with a symmetric design, may allow 40-nm-gap k_t²-Q values on the order of 150, which begins to approach the enormous value posted by 13-nm-gap devices.

Potential uses of hollow-disk resonators of the present description may include but are not limited to the following:

1. Filters for RF channel-selecting filters for a low-power wireless transceiver that can enable practical software-defined cognitive radio, wideband filters for 3G, 4G, 5G, and beyond.

2. Ultra-low phase noise oscillators for timing (clocking), radar, navigation, and communications (e.g. Global System for Mobile (GSM) communications), where the higher the C_x/C_o, the lower the oscillator power consumption, and the wider its application range, and preferably at sub-μW.

3. Gyroscopes, accelerometers, and inertial measurement units, that employ resonating elements, such as MEMS-based gyroscopes used in automobiles, cell phones, and gaming wands, e.g., the Wii.

4. Sensors that employ resonating elements, including inertial measurement units, but also sensors for gas, temperature, pressure, motion, stress, and just about everything that would need to be sensed. (Resonant sensors are widely recognized as the most sensitive around).

5. High Q, high C_x/C_o tank circuits used not only in communications but a myriad of other integrated circuits. High Q and C_x/C_o benefit virtually all integrated circuit applications.

6. Energy scavenging devices, where C_x/C_o often governs the overall efficiency and capability of the energy scavenger.

From the description herein, it will be appreciated that the present disclosure encompasses multiple embodiments which include, but are not limited to, the following:

1. A capacitive-gap transduced micromechanical resonator, comprising: a resonator structure; a first electrode disposed adjacent the resonator structure at a spaced-apart distance defined by an air gap; and a second electrode in proximity to the resonator structure; wherein the resonator structure comprises a hollowed cavity that reduces the dynamic mass and stiffness to increase electromechanical coupling of the resonator.

2. The apparatus or method of any preceding or subsequent embodiment, wherein the first terminal comprises a drive electrode and the second terminal comprises a sense electrode.

3. The apparatus or method of any preceding or subsequent embodiment: wherein the resonator structure comprises a circular disk; and wherein the hollowed cavity forms a thin bottom disk having a radius R and a high-aspect-ratio circular edge ring of width of t.

4. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator structure is configured to operate in radial-contour mode, whispering gallery mode, or wine-glass mode.

5. The apparatus or method of any preceding or subsequent embodiment wherein the bottom disk provides stiffness and the edge ring increases electrode-to-resonator overlap area while minimizing mass to maximize electromechanical coupling.

6. The apparatus or method of any preceding or subsequent embodiment, wherein the disk is coupled to an interconnect layer via a centrally located stem.

7. The apparatus or method of any preceding or subsequent embodiment, wherein the stem is hollow.

8. The apparatus or method f any preceding or subsequent embodiment wherein one or more surfaces of the disk comprise a molded structure.

9. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator is fabricated according to steps comprising: (a) patterning the interconnect layer; (b) planarizing a surface of the interconnect layer with a polished sacrificial layer and etching a hole in the sacrificial layer for the stem; (c) depositing and patterning a structural layer for the disk, (d) conformally depositing a sidewall to the structural layer; (e) etching the structural layer to define an edge-ring to hollow the disk; (f) depositing a sidewall sacrificial layer and etching anchor openings for the drive electrode; (g) depositing and patterning an electrode layer; and (h) releasing the electrode layer, structural layer, and interconnect layer from the sacrificial layer.

10. The apparatus or method of any preceding or subsequent embodiment, wherein conformally depositing the sidewall comprises molding the sidewall over a sacrificial layer.

11. The apparatus or method of any preceding or subsequent embodiment wherein the resonator is fabricated according to the additional step of etching a bottom portion of the structural layer to form a symmetric hollow disk by protruding the edge ring upward and downward.

12. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator structure is symmetric in at least two dimensions.

13. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator has an electromechanical coupling strength (C_x/C_o) of 0.75% at 123 MHz with 40-nm air gap.

14. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator forms a sub-μW low-phase noise reference oscillator.

15. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator forms high-frequency clocking or radar oscillator.

16. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator forms a filter for a low-power wireless transceiver.

17. The apparatus or method of any preceding or subsequent embodiment, wherein the wireless transceiver operates at very high frequency (VHF) and ultra-high frequency (UHF).

18. A capacitive-gap transduced resonator, comprising: a resonator disk; a first terminal disposed adjacent the disk at a spaced-apart distance defined by an air gap; and a second terminal in proximity to the disk; wherein the disk comprises a hollowed cavity that reduces the dynamic mass and stiffness to increase electromechanical coupling of the resonator; wherein the hollowed cavity forms a thin bottom disk having a radius R and a high-aspect-ratio circular edge ring of width of t.

19. The apparatus or method of any preceding or subsequent embodiment, wherein the second terminal comprises a drive electrode and the first terminal comprises a sense electrode.

20. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator disk is configured to operate in radial-contour mode, whispering gallery mode, or wine-glass mode.

21. The apparatus or method of any preceding or subsequent embodiment, wherein the bottom disk provides stiffness and the edge ring increases electrode-to-resonator overlap area while minimizing mass to associated with the resonance frequency of the resonator, thereby maximizing electromechanical coupling.

22. The apparatus or method of any preceding or subsequent embodiment, wherein the disk is coupled to an interconnect layer via a centrally located stem.

23. The apparatus or method of any preceding or subsequent embodiment, wherein the stem is hollow.

24. The apparatus or method of any preceding or subsequent embodiment, wherein the edge ring comprises a molded polysilicon structure.

25. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator is fabricated according to steps comprising: (a) patterning the interconnect layer; (b) planarizing a surface of the interconnect layer with CMP and etching a hole for the stem; (c) depositing and patterning a structural layer for the disk; (d) conformally depositing a sidewall to the structural layer; (e) etching the structural layer to define an edge-ring of the disk; (f) depositing a sidewall sacrificial layer and etching anchor openings for the drive electrode; (g) depositing and patterning an electrode layer; and (h) releasing the electrode layer, structural layer, and interconnect layer from the sacrificial layer.

26. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator disk is symmetric in at least two dimensions.

27. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator is fabricated according to the additional step of etching a bottom portion of the structural layer to form a symmetric hollow disk by protruding the edge ring upward and downward.

28. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator has an electromechanical coupling strength (C_x/C_o) of 0.75% at 123 MHz with 40-nm air gap.

29. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator forms a sub-μW low-phase noise reference oscillator.

30. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator forms high-frequency clocking or radar oscillator.

31. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator forms a filter for a low-power wireless transceiver.

32. The apparatus or method of any preceding or subsequent embodiment, wherein the wireless transceiver operates at very high frequency (VHF) and ultra-high frequency (UHF).

33. The apparatus or method of any preceding or subsequent embodiment, wherein the resonator disk comprises a plurality of cavities.

34. A hollowed out disk resonator operated in a largely radial mode, wine-glass mode, or whispering gallery mode.

35. A disk resonator having a hollow disk cross-section.

36. A hollow disk resonator, comprising: a thin bottom disk of radius R; and a high-aspect-ratio circular edge ring of width of t; wherein the bottom disk sets stiffness; and wherein the edge ring contributes to minimal additional mass while increasing the electrode-to-resonator overlap, lowering the resonance frequency, which takes the form

$f_o=\left\{\frac{K_{mat}}{2R}\sqrt{\frac{E}{\rho }}\right\}\frac{1}{\sqrt{1+\Delta m/m_m}}$

where the term in the curly bracket is the resonance frequency of a radial-contour mode disk with a radius R, K_mat is a parameter dependent upon material properties, E is the Young's modulus, ρ is the Poisson ratio, Δm is the additional mass loading from the edge ring, and mm is the equivalent disk mass referenced to the edge.

As used herein, the singular terms “a,” “an,” and “the” may include plural referents unless the context clearly dictates otherwise. Reference to an object in the singular is not intended to mean “one and only one” unless explicitly so stated, but rather “one or more.”

As used herein, the term “set” refers to a collection of one or more objects. Thus, for example, a set of objects can include a single object or multiple objects.

As used herein, the terms “substantially” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. When used in conjunction with a numerical value, the terms can refer to a range of variation of less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, “substantially” aligned can refer to a range of angular variation of less than or equal to 10°, such as less than or equal to 5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to 2°, less than or equal to 1°, less than or equal to 0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

Additionally, amounts, ratios, and other numerical values may sometimes be presented herein in a range format. It is to be understood that such range format is used for convenience and brevity and should be understood flexibly to include numerical values explicitly specified as limits of a range, but also to include all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly specified. For example, a ratio in the range of about 1 to about 200 should be understood to include the explicitly recited limits of about 1 and about 200, but also to include individual ratios such as about 2, about 3, and about 4, and sub-ranges such as about 10 to about 50, about 20 to about 100, and so forth.

Although the description herein contains many details, these should not be construed as limiting the scope of the disclosure but as merely providing illustrations of some of the presently preferred embodiments. Therefore, it will be appreciated that the scope of the disclosure fully encompasses other embodiments which may become obvious to those skilled in the art.

All structural and functional equivalents to the elements of the disclosed embodiments that are known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be encompassed by the present claims. Furthermore, no element, component, or method step in the present disclosure is intended to be dedicated to the public regardless of whether the element, component, or method step is explicitly recited in the claims. No claim element herein is to be construed as a “means plus function” element unless the element is expressly recited using the phrase “means for”. No claim element herein is to be construed as a “step plus function” element unless the element is expressly recited using the phrase “step for”.

TABLE 1
Detailed Fabrication Process For An Asymmetric Hollow Disk
Figure	Step	Fabrication	Details	Tools
12A	a-1	Deposition	LPCVD 2 μm LTO	tyster 11 & 2
	a-2	Deposition	LPCVD 500 nm LSN	tyster 9
	a-3	Deposition	LPCVD 1 μm LTO	tyster 11 & 2
	a-4 (m1)	Patterning	RIE SiO2 (by Mask #1, m1)	asml 300 &sts-oxide
12B	b-1	Deposition	LPCVD 1.5 μm Si (doped)	tyster 10 & 6
	b-2	CMP	CMP Si (stopped on SiO2)	cmp
	b-3	Deposition	LPCVD 300 nm LTO	tyster 12 & 3
	b-4 (m2)	Patterning	RIE SiO2 (by Mask #2, m2)	asml 300 &sts-oxide
12C	c-1	Deposition	LPCVD 600 nm Si (doped)	tyster 16 & 3
	c-2	Deposition	LPCVD 2 μm LTO	tyster 12 & 4
	c-3 (m3)	Patterning	RIE SiO2 and Si (by Mask #3, m3)	asml 300 &sts-oxide & sts2
12D	d-1	Deposition	LPCVD 350 nm Si (doped)	tyster 16 & 3
12E	e-1	Etching	Blank RIE Si (without a mask)	sts2
12F	f-1	Deposition	LPCVD 148 nm HTO	tyster 17
	f-2 (m4)	Patterning	RIE SiO2 (by Mask #4, m4)	asml 300 &sts-oxide
12G	g-1	Deposition	LPCVD 3 μm Si (doped)	tyster 16 & 6
	g-2	CMP	CMP Si (stopped on SiO2)	cmp
	g-3 (m5)	Patterning	RIE Si (by Mask #5, m5)	asml 300 & sts2
12H	f-1	Release	HF Release	msink 18

TABLE 2
Detailed Fabrication Process For Symmetric Hollow Disk
Figure	Step	Fabrication	Details	Tools
13A	a-1	Deposition	LPCVD 2 μm LTO	tyster 11 & 2
	a-2	Deposition	LPCVD 500 nm LSN	tyster 9
	a-3	Deposition	LPCVD 1 μm LTO	tyster 11 & 2
	a-4 (m1)	Patterning	RIE SiO2 (by Mask #1, m1)	asml 300 &sts-oxide
	a-5	Deposition	LPCVD 1.5 μm Si (doped)	tyster 10 & 6
	a-6	CMP	CMP Si (stopped on SiO2)	cmp
	a-7	Deposition	LPCVD 1.5 μm LTO	tyster 12 & 3
	a- 8 (m2)	Patterning	RIE SiO2 (by Mask #2, m2)	asml 300 &sts-oxide
13B	b-1	Deposition	LPCVD 500 nm Si (doped)	tyster 16 & 3
	b-2	Deposition	LPCVD 2.2 μm LTO	tyster 12 & 4
	b-3 (m3)	Patterning	RIE SiO2, Si and SiO2 (timed	asml 300 &sts-oxide & sts2
			etch) (by Mask #3, m3)
13C	c-1	Deposition	LPCVD 600 nm Si (doped)	tyster 16 & 3
	c-2	Etching	Blank RIE Si (without a mask)	sts2
13D	d-1	Deposition	LPCVD 50 nm HTO	tyster 17
	d-2 (m4)	Patterning	RIE SiO2 (by Mask #4, m4)	asml 300 &sts-oxide
13E	e-1	Deposition	LPCVD 3 μm Si (doped)	tyster 16 & 6
	e-2	CMP	CMP Si (stopped on SiO2)	cmp
	e-3 (m5)	Patterning	RIE Si (by Mask #5, m5)	asml 300 & sts2
13F	f-1	Release	HF Release	msink 18

TABLE 3
Hollow Disk Performance Under Various DC-Bias Voltages
VP	fo	Cx/Co
(V)	(MHz)	(%)	Q	kt2-Q
5	122.9365	0.21	3,512	7.3
6	122.8755	0.30	3,234	9.7
7	122.8055	0.41	3,070	12.5
7.5	122.7665	0.47	2,923	13.7
8	122.7205	0.53	2,789	14.8
8.5	122.6845	0.60	2,610	15.7
9	122.6435	0.67	2,314	15.6
9.5	122.6055	0.75	2,271	17.0

TABLE 4
Hollow Disk Performance Under Various H/h Values
	H/h	Rxh	Lxh	Cxh	Coh	Cxh/Coh
	(−)	(Ω)	(mH)	(fF)	(fF)	(%)
	0	27,825	74.21	0.02	15.02	0.12
	1	7,180	19.77	0.07	30.04	0.25
	2	3,288	9.33	0.17	45.06	0.37
	3	1,902	5.55	0.30	60.08	0.49
	4	1,250	3.75	0.46	75.10	0.62
	5	891	2.74	0.67	90.12	0.74
	6	670	2.11	0.91	105.14	0.87
	7	525	1.69	1.19	120.16	0.99
	8	424	1.40	1.51	135.19	1.11
	9	351	1.18	1.86	150.21	1.24
	10	296	1.02	2.25	165.23	1.36

TABLE 5
Summary Of Variables Of An Asymmetric Hollow Disk And A Solid Disk
	Parameters	Solid Disk	Hollow Disk	Units
Design Variables	Disk Radius (outer), R	32.35	32.35	μm
	Total Height, H	2.4	2.4	μm
	Inner Disk Thickness, h	—	600	nm
	Sidewall Thickness, t	—	350	nm
	Electrode-to-Resonator Gap, do	148	148	nm
	DC Bias Voltage, VP	20	20	V
	Quality Factor, Q	5000	5000	—
	Nominal Frequency, fnom	81.637	79.601	MHz
	Resonance Frequency, fo	81.631	79.450	MHz
Equivalent Circuit Variables	Mech. Inductance (mass), lx	13.850	5.288	pH
	Mech. Capacitance (1/stiffness), cx	0.274	0.756	μF
	Mech. Resistance (damping), rx	1.421	0.529	μΩ
	Static Overlap Capacitance, Co	29.185	29.185	fF
	Electromechanical Coupling Ratio, ηe	3.944	6.582	μC/m
	Motional Inductance, Lx	0.890	0.122	H
	Motional Capacitance, Cx	0.004	0.033	fF
	Motional Resistance, Rx	91.348	12.210	kΩ
	Electrical Stiffness Equiv. Cap., −Ce	−29.185	−9.412	fF
	Cx-to-Ce Capacitive Ratio, Cx/Ce	0.015	0.384	%
	Cx-to-Co Capacitive Ratio, Cx/Co	0.015	0.142	%

TABLE 6
Summary Of Variables Of An Asymmetric Hollow Disk And A Solid Disk
	Parameters	Solid Disk	Hollow Disk	Units
Design Variables	Disk Radius (outer), R	20.6	20.6	μm
	Total Height, H	2.4	2.4	μm
	Inner Disk Thickness, h	—	500	nm
	Sidewall Thickness, t	—	600	nm
	Electrode-to-Resonator Gap, do	50	50	nm
	DC Bias Voltage, VP	10	10	V
	Quality Factor, Q	5000	5000	—
	Nominal Frequency, fnom	128.202	128.202	MHz
	Resonance Frequency, fo	128.163	128.057	MHz
Equivalent Circuit Variables	Mech. Inductance (mass), lx	5.616	1.506	pH
	Mech. Capacitance (1/stiffness), cx	0.274	1.023	μF
	Mech. Resistance (damping), rx	0.905	0.243	μΩ
	Static Overlap Capacitance, Co	55.010	55.010	fF
	Electromechanical Coupling Ratio, ηe	11.002	11.002	μC/m
	Motional Inductance, Lx	0.046	0.012	H
	Motional Capacitance, Cx	0.033	0.124	fF
	Motional Resistance, Rx	7.475	2.005	kΩ
	Cx-to-Co Capacitive Ratio, Cx/Co	0.060	0.225	%

TABLE 7
Summary Of Variables Of A Symmetric Large-Stem Hollow Disk
	Parameters	Asymmetric Hollow Disk	Units
Design Variables	Disk Radius (outer), R	20.6	μm
	Total Height, H	2.4	μm
	Inner Disk Thickness, h	500	nm
	Sidewall Thickness, t	600	nm
	Electrode-to-Resonator Gap, do	50	nm
	Outer Stem Radius, Rst	8	μm
	DC Bias Voltage, VP	7	V
	Quality Factor, Q	1500	—
	Nominal Frequency, fnom	98.048	MHz
	Resonance Frequency, fo	97.837	MHz
Equivalent Circuit Variables	Mech. Inductance (mass), lx	1.530	pH
	Mech. Capacitance (1/stiffness), cx	1.723	μF
	Meeh. Resistance (damping), rx	0.628	μΩ
	Static Overlap Capacitance, Co	70.364	fF
	Electromechanical Coupling Ratio, ηe	8.857	μC/m
	Motional Inductance, Lx	0.020	H
	Motional Capacitance, Cx	0.135	fF
	Motional Resistance, Rx	8.009	kΩ
	Electrical Stiffness Equiv. Cap., −Ce	−31.117	fF
	Capacitive Ratio	Cx/Ce = 0.430%	Cx/Co = 0.261%	—

Claims

1. A capacitive-gap transduced micromechanical resonator, comprising: a resonator structure;a first terminal disposed adjacent the resonator structure at a spaced-apart distance defined by an air gap; anda second terminal in proximity to the resonator structure;wherein the resonator structure comprises a hollowed cavity that reduces the dynamic mass and stiffness to increase electromechanical coupling of the resonator.

2. The resonator of claim 1, wherein the first terminal comprises a drive electrode and the second terminal comprises a sense electrode.

3. The resonator of claim 2: wherein the resonator structure comprises a circular disk; andwherein the hollowed cavity forms a thin bottom disk having a radius R and a high-aspect-ratio circular edge ring of width of t.

4. The resonator of claim 1, wherein the resonator structure is configured to operate in radial-contour mode, whispering gallery mode, or wine-glass mode.

5. The resonator of claim 3, wherein the bottom disk provides stiffness and the edge ring increases electrode-to-resonator overlap area while minimizing mass to maximize electromechanical coupling.

6. The resonator of claim 3, wherein the disk is coupled to an interconnect layer via a centrally located stem.

7. The resonator of claim 6, wherein the stem is hollow.

8. The resonator of claim 6, wherein one or more surfaces of the disk comprise a molded structure.

9. The resonator of claim 8, wherein the resonator is fabricated according to steps comprising: (a) patterning the interconnect layer;(b) planarizing a surface of the interconnect layer with a polished sacrificial layer and etching a hole in the sacrificial layer for the stem;(c) depositing and patterning a structural layer for the disk;(d) conformally depositing a sidewall to the structural layer;(e) etching the structural layer to define an edge-ring to hollow the disk;(f) depositing a sidewall sacrificial layer and etching anchor openings for the drive electrode;(g) depositing and patterning an electrode layer; and(h) releasing the electrode layer, structural layer, and interconnect layer from the sacrificial layer.

10. The resonator of claim 9, wherein conformally depositing the sidewall comprises molding the sidewall over a sacrificial layer.

11. The resonator of claim 9, wherein the resonator is fabricated according to the additional step of etching a bottom portion of the structural layer to form a symmetric hollow disk by protruding the edge ring upward and downward.

12. The resonator of claim 1, wherein the resonator structure is symmetric in at least two dimensions.

13. The resonator of claim 1, wherein the resonator has an electromechanical coupling strength (Cx/Co) of 0.75% at 123 MHz with 40-nm air gap.

14. The resonator of claim 1, wherein the resonator forms a sub-μW low-phase noise reference oscillator.

15. The resonator of claim 1, wherein the resonator forms high-frequency clocking or radar oscillator.

16. The resonator of claim 1, wherein the resonator forms a filter for a low-power wireless transceiver.

17. The resonator of claim 17, wherein the wireless transceiver operates at very high frequency (VHF) and ultra-high frequency (UHF).

18. The resonator of claim 1, wherein the resonator disk comprises a plurality of cavities.

19. A capacitive-gap transduced resonator, comprising: a resonator disk;a first terminal disposed adjacent the disk at a spaced-apart distance defined by an air gap; anda second terminal in proximity to the disk;wherein the disk comprises a hollowed cavity that reduces the dynamic mass and stiffness to increase electromechanical coupling of the resonator;wherein the hollowed cavity forms a thin bottom disk having a radius R and a high-aspect-ratio circular edge ring of width of t.

20. The resonator of claim 19, wherein the first terminal comprises a drive electrode and the second terminal comprises a sense electrode.

21. The resonator of claim 19, wherein the resonator disk is configured to operate in radial-contour mode, whispering gallery mode, or wine-glass mode.

22. The resonator of claim 19, wherein the bottom disk provides stiffness and the edge ring increases electrode-to-resonator overlap area while minimizing mass to maximize electromechanical coupling.

23. The resonator of claim 19, wherein the disk is coupled to an interconnect layer via a centrally located stem.

24. The resonator of claim 23, wherein the stem is hollow.

25. The resonator of claim 23, wherein one or more surfaces of the disk comprise a molded structure.

26. The resonator of claim 25, wherein the resonator is fabricated according to steps comprising: (a) patterning the interconnect layer;(b) planarizing a surface of the interconnect layer with a polished sacrificial layer and etching a hole in the sacrificial layer for the stem;(c) depositing and patterning a structural layer for the disk;(d) conformally depositing a sidewall to the structural layer;(e) etching the structural layer to define an edge-ring to hollow the disk;(f) depositing a sidewall sacrificial layer and etching anchor openings for the drive electrode;(g) depositing and patterning an electrode layer; and(h) releasing the electrode layer, structural layer, and interconnect layer from the sacrificial layer.

27. The resonator of claim 19, wherein the resonator disk is symmetric in at least two dimensions.

28. The resonator of claim 26, wherein the resonator is fabricated according to the additional step of etching a bottom portion of the structural layer to form a symmetric hollow disk by protruding the edge ring upward and downward.

29. The resonator of claim 19, wherein the resonator has an electromechanical coupling strength (Cx/Co) of 0.75% at 123 MHz with 40-nm air gap.

30. The resonator of claim 19, wherein the resonator forms a sub-μW low-phase noise reference oscillator.

31. The resonator of claim 19, wherein the resonator forms high-frequency clocking or radar oscillator.

32. The resonator of claim 19, wherein the resonator forms a filter for a low-power wireless transceiver.

33. The resonator of claim 32, wherein the wireless transceiver operates at very high frequency (VHF) and ultra-high frequency (UHF).