Claims
- 1. A high frequency, Schottky barrier gate field-effect transistor comprised of:
- A. an epitaxial semiconductor layer having an N-type impurity concentration of between about 5 .times. 10.sup.14 and 5 .times. 10.sup.17 carriers/cm.sup.3 and a thickness less than about 2 microns at least at portions adapted to support a gate contact;
- B. elongated source and drain contacts spaced apart adjoining said semiconductor layer and making ohmic contact therewith;
- C. an elongated gate contact spaced between the source and drain contacts and making Schottky barrier contact with the semiconductor layer at said portions adapted to support a gate contact;
- D. a dielectric layer adjoining and supporting said semiconductor layer and having parameters adapted to provide effective dielectric constants at the gate and drain contacts greater than .sqroot.2;
- E. a conductor substrate having a major surface layer adjoining and supporting said dielectric layer; and
- F. means for maintaining the conductor substrate and the source contact at substantially the same RF potential.
- 2. A high frequency Schottky barrier gate field-effect transistor as set forth in claim 1 wherein:
- the semiconductor layer is composed of a material selected from the group consisting of silicon, gallium arsenide and indium phosphide and is doped to an N-type impurity concentration between about 1 .times. 10.sup.15 and 1 .times. 10.sup.17 carriers/cm.sup.3.
- 3. A high frequency, Schottky barrier gate field-effect transistor as set forth in claim 1 wherein:
- the gate and drain contacts are substantially constant in widths along their lengths.
- 4. A high frequency, Schottky barrier gate field-effect transistor as set forth in claim 3 wherein: the ratio of L/H is substantially equal to the ratio l/h where:
- L is the width of the drain contact;
- H is the average thickness of the dielectric layer plus the semiconductor layer at the drain contact;
- l is the width of the gate contact; and h is the average thickness of the dielectric layer plus the semiconductor layer at the gate contact.
- 5. A high frequency, Schottky barrier gate field-effect transistor as set forth in claim 4 wherein: the ratios L/H and l/h are selected by the equation ##EQU2## where: z.sub.o is, respectively, the input and output impedances of a circuit to which the transistor is to be connected at the gate and drain contacts; and
- .epsilon. is, respectively, an effective dielectric constant at said active gate or drain contact.
- 6. A high frequency, Schottky barrier gate field-effect transistor is comprised of:
- A. conductor substrate having a major surface;
- B. a dielectric layer adjoining said major surface and supported by the conductor substrate, said dielectric layer having a thickness less than about 5 microns and a dielectric constant greater than about 5;
- C. an epitaxial semiconductor layer adjoining said dielectric layer, said semiconductor layer having a thickness less than about 2 microns and an N-type impurity concentration of between about 5 .times. 10.sup.14 and 5 .times. 10.sup.17 carriers/cm.sup.3 ;
- D. elongated source and drain contacts spaced apart adjoining said semiconductor layer and making ohmic contact therewith;
- E. an elongated gate contact spaced between the source and drain contacts and making Schottky barrier contact with the semiconductor layer; and
- F. means for maintaining the conductor substrate and source contact at substantially the same RF potential.
- 7. A high frequency, Schottky barrier gate field-effect transistor as set forth in claim 6 wherein:
- the semiconductor layer is composed of a material selected from the group consisting of silicon, gallium arsenide and indium phosphide and is doped in an N-type impurity concentration between about 1 .times. 10.sup.15 and 1 .times. 10.sup.17 carriers/cm.sup.3.
- 8. A high frequency, Schottky barrier gate field-effect transistor as set forth in claim 6 wherein:
- the gate and drain contacts are substantially constant in widths along their lengths.
- 9. A high frequency, Schottky barrier gate field-effect transistor as set forth in claim 8 wherein: the ratio of L/H is substantially equal to the ratio l/h where:
- L is the width of the drain contact;
- H is the average thickness of the dielectric layer plus the semiconductor layer at the drain contact;
- l is the width of the gate contact; and
- h is the average thickness of the dielectric layer plus the semiconductor layer at the gate contact.
- 10. A high frequency, Schottky barrier gate field-effect transistor as set forth in claim 9 wherein: the ratios L/H and l/h are selected by the equation ##EQU3## where: z.sub.o is the input and output impedances of a circuit to which the transistor is to be connected;
- .epsilon. is, respectively, an effective dielectric constant at the active gate or drain contact.
Parent Case Info
This is a continuation of application Ser. No. 404,577 filed Oct. 9, 1973 and now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3675313 |
Driver et al. |
Jul 1972 |
|
3737743 |
Goronkin et al. |
Jun 1973 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
404577 |
Oct 1973 |
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