Claims
- 1. A photoconductive switch comprising:
- a substrate of semiconductive material having at least two opposite surfaces;
- a first patterned electrode placed onto a first surface of said substrate;
- a second patterned electrode placed onto a second surface of said substrate opposite said first surface;
- a power supply means for providing an electric field in a predetermined direction across the first and second patterned electrodes; and
- means by which the two opposite surfaces of the substrate are exposed to a radiation source of a predetermined wavelength such that said radiation is absorbed by said substrate.
- 2. The photoconductive switch as in claim 1 wherein the substrate consists primarily of gallium arsenide.
- 3. The photoconductive switch as in claim 1 wherein the radiation source is directed parallel to the direction of said electric field.
- 4. The photoconductive switch as in claim 1 wherein said first and second patterned electrodes are patterned such that forty to sixty percent of the substrate is exposed to said radiation source.
- 5. The photoconductive switch as in claim 1 wherein said radiation source emanates from a laser and is delivered from the laser via a bundle of at least one fiber optic cable.
- 6. A photoconuctive switch comprising:
- a substrate of semiconductive material having at least two opposite surfaces;
- a plurality of patterned electrodes placed onto at least two surfaces of aid substrate;
- a power supply means for providing an electric field in a predetermined direction across the plurality of electrodes; and
- means by which at least two opposite surfaces of the substrate are exposed to a radiation source of predetermined wavelength such that said radiation sourced is absorbed by said substrate.
- 7. The photoconductive switch as in claim 6 wherein the substrate consists primarily of gallium arsenide.
- 8. A photoconductive switch as in claim 3 wherein the first and second patterned electrodes are comprised of a first layer of nickel, a layer of germanium, a first layer of gold, a layer of silver, and a second layer of gold.
- 9. A photoconuctive switch as in claim 8 wherein the first and second patterned electrodes are patterned in the manner exhibited in FIG. 6 herein.
- 10. A photoconuctive switch as in claim 90 wherein the first and second electrodes have a outer diameter and about 1 centimeter and wherein the pattern exhibited has apertures which are about 586 microns in diameter and are separated by about 150 microns.
Government Interests
The invention described herein may be manufactured, used, and licensed by the Government of the U.S. for governmental purposes without the payment to us of any royalties thereon.
US Referenced Citations (5)
Foreign Referenced Citations (3)
Number |
Date |
Country |
57-12570 |
Jan 1982 |
JPX |
58-30171 |
Feb 1983 |
JPX |
8800397 |
Jan 1988 |
WOX |
Non-Patent Literature Citations (2)
Entry |
Kim et al, "High Power RF Generation With Optically Activated Bulk GaAs Dces," 1988 IEEE MTT-S Digest, pp. 1071-1074. |
Kim et al, "Bulk GaAs Photonic Devices With Two Opposite Electrodes," Jun. 1989, IEEE Pulsed Power Conference, IEEE Catalog No. 89CH2678-2, pp. 430-432. |