Claims
- 1. A high-purity aluminum sputter target, the sputter target being at least 99.999 weight percent aluminum and having a grain structure, the grain structure being at least about 99 percent recrystallized and having a grain size of less than about 200 μm, wherein the sputter target has a sputter target face for sputtering the sputter target; and the sputter target face has a grain orientation ratio of at least about 35 percent (200) orientation and about 5 to 35 percent of each of the (111), (220) and (311) orientations.
- 2. The sputter target of claim 1 wherein the sputter target has a monoblock structure.
- 3. A high-purity aluminum sputter target, the sputter target being at least 99.999 weight percent aluminum and having a grain structure, the grain structure being at least about 99 percent recrystallized and having a grain size of less than about 125 μm, wherein the sputter target has a sputter target face for sputtering the sputter target; and the sputter target face has a grain orientation ratio of at least about 35 percent (200) orientation and about 5 to 35 percent of each of the (111), (220) and (311) orientations.
- 4. The sputter target of claim 3 wherein the sputter target has a monoblock structure.
- 5. A high-purity aluminum sputter target, the sputter target being at least 99.999 weight percent aluminum and having a grain structure, the grain structure being at least about 99 percent recrystallized and having a grain size of less than about 80 μm, wherein the sputter target has a sputter target face for sputtering the sputter target; and the sputter target face has a grain orientation ratio of at least about 35 percent (200) orientation and about 5 to 35 percent of each of the (111), (220) and (311) orientations.
- 6. The sputter target of claim 5 wherein the sputter target has a monoblock structure.
Parent Case Info
This is a continuation-in-part application of U.S. Ser. No. 10/054,345, filed Nov. 13, 2001, now pending.
US Referenced Citations (4)
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10/054345 |
Nov 2001 |
US |
Child |
10/219756 |
|
US |