Patent Application
20240376134
As semiconductor fabrication continues to advance, feature sizes continue to shrink, driving the need for new processing methods. Certain organotin compounds have been shown to be useful in the deposition of tin oxide hydroxide coatings in applications such as extreme ultraviolet (EUV) lithography techniques. For example, tin compounds containing unsaturated substituents provide radiation sensitive Sn—C bonds that can be used to pattern structures lithographically.
Materials used in microelectronic fabrication are required to be extremely pure with tight limits placed on organic contamination (e.g., reaction by-products), metallic contamination, and particulate contamination. Purity requirements are stringent in general, and particularly for lithography applications because the chemical is in contact with the semiconductor substrates and the organometallic impurities in compounds such as diisopropylbis (dimethylamino) tin, (iPr)2Sn(NMe2)2, can affect the properties of the resultant film. Exact targets for purities are determined by a variety of factors, including performance metrics, but typical minimum purity targets are 3N+. Residual metals present in the chemicals can be deposited onto the semiconductor substrate and degrade the electrical performance of the device being fabricated. Typical specifications for metals are less than 10 ppb for individual metals and total metal not to exceed˜100 ppb.
The processing and performance of semiconductor materials may also be sensitive to dialkyl tin contaminants. Dialkyl tin impurities such as R2Sn(NMe2)2, where R is an alkyl group, are the source of off-gassing after vapor phase deposition or spin-on coating processes due to the oxostannate cluster films being less dense when the film contains dialkyl groups. To produce microelectronic products using EUV lithography, proper control of dialkyl tin contaminants is required. The high purity required from the mono-alkyl tin precursor manufacturing process becomes a challenge. In general, the syntheses of monoalkyl tin triamides have previously employed lithium dimethylamide reagents reacted with alkyl tin trichloride, or followed by a lithium/Grignard reagent (alkylating agent) to convert the tin tetraamides to the desired triamides.
However, similar synthetic methods are not applicable for the synthesis of tin compounds containing unsaturated substituents such as vinyl, allyl, or alkenyl. Rather, the lithium dimethyl amide strong base will react not only with the tin-chlorine bond, but also with the double or triple bond on the organic substituent. Further, primary and secondary monoorgano tin compounds cannot be synthesized from an alkylating agent and a tetraamide even when using the correct stoichiometry: a primary alkylating agent will convert a tin tetraamide to a trialkyltin amide and unreacted tetraamide, and a secondary alkylating agent will convert a tin tetraamide to polyalkyl tin compounds.
Further, monoalkenyl tin trialkoxides cannot be prepared via the reaction of the corresponding tin triamide with an alcohol, and reaction of an organotin trichloride with dialkylamine followed by reaction with alcohol leads to a mixture of products.
Graf (“Tin, Tin Alloys, and Tin Compounds,” Ullmann's Encyclopedia of Industrial Chemistry; Weinheim: Wiley-VCH (2005)) reports the preparation of monoorgano tin trichlorides containing vinyl or allyl substituents without a catalyst or heat using Kocheshkov comproportionation; the electron donating group enables the comproportionation. As a result, the unsaturated/electron donating group from both the alkenyl or alkoxy group may promote the Kocheshkov-like comproportionation during the reaction especially when preparing mono-vinyl or mono-allyl tin trialkoxy compounds according to scheme (I), shown below, and the disproportion during purification scheme (II), resulting in a mixture of products.
The ability to prepare and isolate trialkoxy tin compounds containing an unsaturated group and having desired high purity levels has not previously been reported. Such high purity tin compounds would be very attractive for use in the microelectronic industry.
In one embodiment, aspects of the disclosure relate to a monoorgano tin trialkoxide compound having formula (1) and containing less than about 5 mol % of a tin tetraalkoxide compound having formula (2):
R′Sn(OR)3 (1)
Sn(OR)4 (2)
wherein R′ is a linear or branched, unsaturated hydrocarbon group having about 2 to about 4 carbon atoms and each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms.
In a second embodiment, aspects of the disclosure relate to a method of synthesizing a monoorgano tin trialkoxide compound having formula (1) and containing less than about 5 mol % of a tin tetraalkoxide compound having formula (2):
R′Sn(OR)3 (1)
Sn(OR)4 (2)
wherein R′ is a linear or branched, unsaturated hydrocarbon group having about 2 to about 4 carbon atoms and each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms, the method comprising reacting an alkali metal alkoxide with a R′SnX3 compound, wherein X is a halogen atom or an alkoxy group.
In a third embodiment, aspects of the disclosure relate to a monoorgano tin trialkoxide compound having formula (IV):
wherein each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms.
Advantageous refinements of the invention, which can be implemented alone or in combination, are specified in the dependent claims.
In summary, the following embodiments are proposed as particularly preferred in the scope of the present invention:
Embodiment 1: A monoorgano tin trialkoxide compound having formula (1) and containing less than about 5 mol % of a tin tetraalkoxide compound having formula (2):
R′Sn(OR)3 (1)
Sn(OR)4 (2)
wherein R′ is a linear or branched, unsaturated hydrocarbon group having about 2 to about 4 carbon atoms and each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms.
Embodiment 2: The monoorgano tin trialkoxide compound according to Embodiment 1, wherein the content of diorgano tin dialkoxide having formula (3) is less than about 1 mol %:
R′2Sn(OR)2 (3).
Embodiment 3: The monoorgano tin trialkoxide compound according to Embodiment 1 or 2, wherein a total content of tris (alkenyl) tin compounds is less than about 1 mol %.
Embodiment 4: The monoorgano tin trialkoxide compound according to any of Embodiments 1-3, wherein R is an isopropyl; t-butyl; t-amyl; 1,1,1-trifluoro-2-methylpropan-2-yl; trimethylsilyl; or phenyl group.
Embodiment 5: A method of synthesizing a monoorgano tin trialkoxide compound having formula (1) and containing less than about 5 mol % of a tin tetraalkoxide compound having formula (2):
R′Sn(OR)3 (1)
Sn(OR)4 (2)
wherein R′ is a linear or branched, unsaturated hydrocarbon group having about 2 to about 4 carbon atoms and each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms, the method comprising reacting an alkali metal alkoxide with a R′SnX3 compound, wherein X is a halogen atom or an alkoxy group.
Embodiment 6: The method according to Embodiment 5, comprising:
Embodiment 7: The method according to Embodiment 5 or 6, wherein the content of diorgano tin dialkoxide having formula (3) is less than about 1 mol %:
R′2Sn(OR)2 (3).
Embodiment 8: The method according to any of Embodiments 5-7, wherein R is an isopropyl; t-butyl; t-amyl; 1,1,1-trifluoro-2-methylpropan-2-yl; trimethylsilyl; or phenyl group.
Embodiment 9: The method according to any of Embodiments 5-8, wherein the reaction is performed in a solvent containing greater than about 50% by volume of a hydrocarbon solvent and/or an aromatic solvent.
Embodiment 10: The method according to any of Embodiments 5-9, wherein the reaction is performed substantially without light exposure.
Embodiment 11: A method of storing a sample of the monoorgano tin trialkoxide compound having formula (1) according to any of Embodiments 1-10, the method comprising storing the sample of the monoorgano tin trialkoxide compound having formula (1) substantively without light exposure and at a temperature of less than about 30° C.
Embodiment 12: The method according to Embodiment 11, wherein the sample of the monoorgano tin trialkoxide compound having formula (1) is stored for about three days to about one year.
Embodiment 13: The method according to Embodiment 11 or 12, wherein the sample of the monoorgano tin trialkoxide compound undergoes substantively no decomposition after a storage time of about three days to about one year.
Embodiment 14: The method according to any of Embodiments 11 to 13, comprising storing the compound having formula (1) in a container in an inert atmosphere.
Embodiment 15: The method according to any of Embodiments 11-14, comprising storing the compound having formula (1) in a container substantially without light exposure.
Embodiment 16: A monoorgano tin trialkoxide compound having formula (IV)
wherein each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms.
Embodiment 17: The monoorgano tin trialkoxide compound according to Embodiment 16, wherein R is an isopropyl, t-butyl, t-amyl, 1,1,1-trifluoro-2-methylpropan-2-yl, trimethylsilyl, or phenyl group.
Embodiment 18: The monoorgano tin trialkoxide compound according to Embodiment 16 or Embodiment 17, containing less than about 5 mol % of a tin tetraalkoxide compound having formula (2):
Sn(OR)4 (2).
Embodiment 19: The monoorgano tin trialkoxide compound according to any of Embodiment 16-18, wherein a content of a di (2-methylpropenyl) tin dialkoxide compound is less than about 1 mol %.
Embodiment 20: The monoorgano tin trialkoxide compound according to any of Embodiment 16-19, wherein a total content of tris (alkenyl) tin compounds is less than about 1 mol %.
The foregoing summary, as well as the following detailed description of the invention, will be better understood when read in conjunction with the appended drawing. For the purpose of illustrating the invention, there are shown in the drawing embodiments which are presently preferred. It should be understood, however, that the invention is not limited to the precise arrangements and instrumentalities shown. In the drawings:
According to one aspect of the disclosure, provided are monoorgano tin trialkoxide compounds having formula (1). For the purposes of this disclosure, the term “monoorgano” refers to a substituent containing a single unsaturated primary or secondary hydrocarbon group having at least two carbon atoms, that is, one alkenyl group or one alkynyl group in a primary or secondary position with respect to tin. The compounds having formula (1) preferably have a purity of at least about 95 mol % and preferably contain less than about 5 mol % of a tin tetraalkoxide compound having formula (2) relative to the total amount of tin, preferably no more than about 4 mol %, no more than about 3 mol %, no more than about 2 mol %, more preferably no more than about 1 mol %, even more preferably no more than about 0.5 mol %, even more preferably no more than about 0.1 mol % of the compound having formula (2).
R′Sn(OR)3 (1)
Sn(OR)4 (2).
In formulas (1) and (2), R′ is a linear or branched, unsaturated hydrocarbon group having about 2 to about 4 carbon atoms, such as an alkenyl or alkynyl group, and each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms, more preferably 1 to about 4 carbon atoms, such as, without limitation, optionally fluorinated methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, t-butyl, or t-amyl. Presently preferred R groups include isopropyl, t-butyl, t-amyl, 1,1,1-trifluoro-2-methylpropan-2-yl, trimethylsilyl, and phenyl groups. Secondary and tertiary alkyl groups are preferred for providing steric stability and trimethylsilyl, phenyl, and fluorinated alkyl groups are preferred for providing electronic stability. Further, it has been found that alkoxy groups disclosed herein (fluorinated alkoxy, phenoxy, and trimethylsiloxy) stabilize redistribution during distillation and minimize the formation of undesirable impurities such as the tin tetra alkoxide compounds having formula (2). Presently preferred R′ groups include, without limitation, vinyl (ethenyl), allyl, 1-propenyl, 3-buten-1-yl, 3-buten-2-yl, and 2-methyl allyl.
The term “optionally fluorinated” means that at least one hydrogen atom in the alkyl group in R is replaced with a fluorine atom; it is within the scope of the invention for one, two, or even all of the hydrogen atoms in the hydrocarbon group or the alkyl group to be replaced with fluorine atoms (generally referred to as perfluorinated). In other words, an “optionally fluorinated” alkyl group is an alkyl group with or without at least one fluorine atom replacing a hydrogen atom.
All numerical ranges expressed in this disclosure encompass all values within the range, including fractional and decimal amounts. Accordingly, the content of the compound having formula (2) is preferably less than about 5 mol %, less than about 4 mol %, less than about 3 mol %, less than about 2 mol %, less than about 1 mol %, less than about 0.9 mol %, less than about 0.8 mol %, less than about 0.7 mol %, less than about 0.6 mol %, less than about 0.5 mol %, less than about 0.4 mol %, less than about 0.3 mol %, less than about 0.2 mol %, less than about 0.1 mol %, less than about 0.05 mol %, less than about 0.04 mol %, less than about 0.03 mol %, less than about 0.02 mol %, less than about 0.01 mol %, or non-detectable by 119Sn NMR, that is, the compound having formula (2) is in some embodiments undetectable in a sample of the compound having formula (1).
In some embodiments, the content of diorgano tin dialkoxide having formula (3) in the monoorgano tin trialkoxide compound having formula (1) is less than about 1 mol %, more preferably less than about 0.9 mol %, less than about 0.8 mol %, less than about 0.7 mol %, less than about 0.6 mol %, less than about 0.5 mol %, less than about 0.4 mol %, less than about 0.3 mol %, less than about 0.2 mol %, less than about 0.1 mol %, less than about 0.05 mol %, less than about 0.04 mol %, less than about 0.03 mol %, less than about 0.02 mol %, less than about 0.01 mol %, or non-detectable by 119Sn NMR.
R′2Sn(OR)2 (3)
In some embodiments, a total content of tris (alkenyl) tin compounds in the monoorgano tin trialkoxide compound having formula (1) is less than about 1 mol % more preferably less than about 0.7 mol %, less than about 0.5 mol %, or less than about 0.1 mol %, including all intermediate ranges.
The organometallic tin compounds having formula (1) may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their electron density, Sn—C bond strength, and radical formation, as well as the potential to reduce EUV dose time.
Aspects of the disclosure additionally relate to methods for synthesizing the high purity tin compounds having formula (1) as described above which are suitable for use in the microelectronic industry and which preferably contain low levels of tetraalkoxy tin compounds having formula (2) and diorgano tin compounds having formula (3). One method involves the reaction of an organotin trichloride with an alkali metal alkoxide (weak base) in controlled molar ratios and temperatures to introduce the water reactive alkoxide group to the tin moiety without affecting the unsaturated substituent. If desired, following initial purification, the level of diorgano tin compound and other minor impurities may be further reduced using fractional distillation.
119Sn NMR spectroscopy is ideally suited to the quantitative analysis of monoorgano tin compounds (containing both alkenyl and alkynyl substituents) due to its high sensitivity to small structural changes and large spectral range of 6500 ppm (see Davies et al., Eds.; Tin Chemistry: Fundamentals, Frontiers, and Applications; Wiley (2008)). This allows for easy identification and quantification of monoorgano tin compounds and their impurities because 119Sn resonances are highly resolved. 119Sn NMR suffers from reduced sensitivity compared to other analytical methods such as GC, HPLC, or 1H NMR. To improve sensitivity, monoorgano tin compounds are analyzed without dilution, and a large number of spectral acquisitions (2000+) are acquired to measure the low levels of impurities described in this work. Using this approach, detection limits of as low as 0.1 mol % diorgano tin dialkoxide and tin tetraalkoxide compounds can be achieved.
The 119Sn NMR data described herein were obtained using a method similar to the relative purity method described in J. Med. Chem. (57, 22, 9220-9231 (2014)). 119Sn NMR spectra were acquired using inverse-gated 1H decoupling with a 40° pulse, one second relaxation delay, and sufficient scans to achieve the required sensitivity. Samples were prepared without dilution in deuterated solvent. Quantitation was performed by integrating all peaks in the spectrum and setting the total peak area to 100. Each peak in the spectrum represents a distinct tin compound and the area of each peak represents the concentration or purity of that compound in mol %.
A method of synthesizing monoorgano tin trialkoxide compound having formula (1) according to aspects of the disclosure comprises reacting an alkali metal alkoxide with a R′SnX3 compound, wherein X is a halogen atom or an alkoxy group.
Preferably, the method involves preparing a solution of an alkali metal alkoxide in an appropriate solvent, such as anhydrous hexanes, at a desired concentration, then cooling the solution to a low temperature, such as, without limitation at about 0° C. to about-10° C. for reaction with the R′SnX3 compound. For example, if the desired compound having formula (1) is allyltris (t-butoxy) tin, the alkali alkoxide may be potassium t-butoxide, sodium t-butoxide, or lithium t-butoxide. The concentration of the alkali metal alkoxide is preferably up to about 10-15 wt % relative to the amount of solvent, more preferably about 8 to 10 wt %. The appropriate solvent and concentration may be determined by routine experimentation and based on commercial availability of the desired alkali metal alkoxide.
For the methods and steps described herein, preferred solvents include hydrocarbon solvents (such as, but not limited to, hexane, hexanes, heptane, and cyclohexane) and aromatic solvents (such as, but not limited to, toluene and xylene).
Appropriate R′SnX3 compounds are those in which X is a halogen atom (such as fluoro, bromo, or the preferred chloro) or an alkoxy group (such as one containing about 1 to about 5 carbon atoms, such as the presently preferred methyl, ethyl, propyl, or butyl groups). Most preferably, the R′SnX3 compound is R′SnCl3. Following reaction of the alkali metal alkoxide with the R′SnX3 compound, the reaction mixture is worked up and purified using methods well known in the art to produce the compound having formula (1).
In some embodiments, the method comprises:
These steps will be described in further detail below.
A further method for preparing a monoorgano tin trialkoxide compound having formula (1) according to further aspects of the disclosure involves the following steps, each of which is described in further detail below:
The first step in the method involves preparing a solution of alkali metal alkoxide solution in an appropriate solvent, such as anhydrous hexanes, at a desired concentration, then cooling the solution to a low temperature, such as at about 0° C. to about −10° C. For example, if the desired compound having formula (1) is allyltris (t-butoxy) tin, the alkali alkoxide may be potassium t-butoxide, sodium t-butoxide, or lithium t-butoxide. The concentration of the alkali metal alkoxide is preferably up to about 10-15 wt % relative to the amount of solvent, more preferably about 8 to 10 wt %. The appropriate solvent and concentration may be determined by routine experimentation and based on commercial availability of the desired alkali metal alkoxide.
In the second step, a monoalkenyl or monoalkynyl tin trichloride R′SnCl3 or other R′SnX3 compound is added to the alkali metal alkoxide solution at about −10° C. to about 10° C., such that the amount of alkali metal alkoxide is at least about 3.03 equivalents relative to the amount of organo tin trichloride or organo tin trialkoxide added. The slight molar excess ensures complete reaction of the organotin trichloride or organotin trialkoxide. Preferably, the molar excess is maintained as close as possible to about 3% excess to avoid polymerization of the unsaturated group but it is also within the scope of the disclosure to employ a molar excess of about 2% to about 4% or 5% or as high as about 15% so that the metal alkoxide is present in an amount of about 3.02 to about 3.15 equivalents, preferably about 3.02 to about 3.05 equivalents, relative to the amount of tin trichloride (or tin trialkoxide) added. For example, allyl trichloro tin may be employed in the second step for the preparation of an allyl tin trialkoxide. The R′SnCl3 compound may be purchased commercially or prepared, such as, for example, by the redistribution reaction of R′4Sn and SnCl4 to produce R′SnCl3.
The organotin trichloride or organotin trialkoxide is preferably added in a dropwisc fashion to control the exothermic reaction. The second method step is preferably performed in an inert atmosphere, such as nitrogen or argon. The monoorgano tin trichloride or monoorgano tin trialkoxide is preferably added neat (without solvent) but it is also within the scope of the disclosure to add the monoorgano tin trichloride or monoorgano tin trialkoxide in a solvent such as, without limitation, hexanes, toluene, THF, xylenes, heptanes, dichloromethane, or benzenc.
After completing the addition of organo tin trichloride or organo tin trialkoxide to the alkali metal alkoxide solution, the reaction mixture is allowed to slowly warm to room temperature, such as over a period of about four hours, and then stirred for an additional period of time at room temperature, such as for about two to four hours. The reaction mixture is then filtered, such as through celite, to remove the alkali metal chloride byproduct. Other means of filtration which are known in the art may also be employed. The resulting salt is then rinsed, such as with anhydrous hexanes, and the solvent is removed under reduced pressure by means known in the art to produce a crude product.
Finally, the crude product is distilled, such as at less than about 10 torr, preferably less than about 0.5 torr to yield the desired product containing monoorgano tin trialkoxide (such as vinyltris ((1,1,1-trifluoro-2-methylpropan-2-yl) oxy) stannanc) which in some embodiments has a purity of greater than about 95 mol % and contains no more than about 5 mol % tin tetraalkoxide. The appropriate distillation conditions may be determined on a case-by-case basis depending on the desired product using routine experimentation. In preferred embodiments, the content of tin tetraalkoxide is less than about 4 mol %, less than about 3 mol %, less than about 2 mol %, less than about 1 mol %, less than about 0.5 mol %, less than about 0.1 mol %, or even lower, as described above. Desirably, the compound having formula (1) also contains low levels of diorgano tin dialkoxides having formula (3) as an impurity. Unlike methods of forming organotin trialkoxide compounds from the reaction of diethylamine followed by alcohol, which form mixtures of products due to comproportionation, the method described herein produces the desired product in high purity (containing low amounts of tetraalkoxide and diorgano tin dialkoxide impurities) and yield.
All of the method steps are preferably performed substantially without light exposure. Shielding may be accomplished by any method known in the art such as, for example, employing light-shielded containers such as amber glass, metal (SUS) containers, wrapping the container with a light-shielding cover such as cloth, foil or film, using light-shielding coatings, or performing the reactions in a dark room.
The distillation may be performed using a stainless steel column packed with a stainless steel packing material. Alternatively, the distillation may be performed in a light-shielded apparatus comprising glass such as glass equipment, glass-lined equipment, glass-coated equipment, etc. Shielding may be accomplished by any method known in the art such as, for example, employing light-shielded containers such as amber glass, metal (SUS) containers, wrapping the container with a light-shielding cover such as cloth, foil or film, using light-shielding coatings, or performing the distillation in a dark room.
In preferred embodiments, the methods described herein are performed in a solvent containing greater than about 50% by volume of a hydrocarbon solvent and/or an aromatic solvent such as, without limitation, those exemplified above. In preferred embodiments, the methods described herein are performed substantially without light exposure. In preferred embodiments, the alkali metal alkoxide is dehydrated prior to reaction with the R′SnX3 compound.
While performing the alkoxylation reaction to form monoorgano tin trialkoxides, the Kocheshkov-like comproportionation shown in scheme (I) above also occurs, and even low temperatures, such as from about −78° C. to 10° C., do not prevent the comproportionation reaction from occurring. Further, the electron donation could contribute to the Kocheshkov-like comproportionation and form up to 15 mol % diorgano tin alkoxides as determined by 119Sn NMR.
However, the method described herein provides a synthetic strategy for forming tin compounds having unsaturated substituents without substantial amounts of diorgano tin dialkoxide impurities. It has been found that lithium dimethylamide not only reacts with tin chloride but also with unsaturated bonds. Accordingly, as described herein, lithium dimethylamide is not employed, and the concentration of reactants is diluted, such as by employing a metal alkoxide in a hexane slurry at a concentration of not more than about 10 wt % to limit formation of the polyorgano tin compounds. Further, the temperature of the alkali alkoxide solution prior to and during addition of organo tin trichloride or organo tin trialkoxide is carefully controlled.
It is further within the scope of the disclosure to employ an alcohol R′OH (or a partially fluorinated alcohol) rather than the alkali metal alkoxide reactant for preparing the compounds having formula (1) as described herein, and further to employ a partially fluorinated alkoxide group in the alkali metal alkoxide reactant.
The addition of CF3 groups to the alkoxide ligand may improve the volatility/vapor pressure of the resulting tin compounds in part because the fluorine atoms provide an increasing amount of intermolecular repulsion due to their high electronegativity relative to carbon. In addition, fluorine has reduced polarizability (as compared to hydrogen) which causes fluorinated ligands to have less intermolecular attractive interactions. Extending this concept, separation of unwanted by-products may also be simplified as the vapor pressure difference between [CF3 (CH3) CHO]2SnR2, [CF3 (CH3) CHO]3SnR, and [CF3 (CH3) CHO]4Sn would be greater than what is observed for the related tert-butoxide or amide derivatives. In general, fluorinated alkoxides are weaker donors/bases than standard alkoxides due to the electronegativity of the fluorine atoms. This means that the resulting tin compounds are less sensitive to residual moisture than the related alkoxy tin complexes but should still react with water under CVD conditions to deposit tin oxides. In addition to stability towards residual moisture, the weaker donation to tin from the fluorinated alkoxides may also serve to strengthen the tin-carbon bond and thus provide more stable tin alkenyl or alkynyl complexes. The fluorinated alkoxide is also much less likely to attack the double bond of the allyl group as it is less nucleophilic than an amide ligand.
It is reasonable to presume that metallic impurities in organotin trialkoxy compounds are present as metal chlorides. If so, removal may be affected over an adsorbent, such as BASF CL-750, a chloride adsorbent known in the industry. Additional chloride impurities may be present, such as lithium chlorides which may be carried forward in the production process and become impurities of concern. Removal over a chloride-scavenging adsorbent, e.g., CL-750 or activated carbon may be effective for removal.
Further aspects of the disclosure relate to methods of storing monoorgano tin trialkoxide compounds having formula (1) as described herein. A method of storing a sample (such as, but not limited to a sample of more than about 0.5 kg) of a monoorgano tin trialkoxide compound having formula (1) as described herein comprises storing the sample of the monoalkyl tin triamide compound having formula (1) substantially without light exposure and at any temperature, such as a temperature of less than about 30° C. The method may involve storing the compound having formula (1) in a container in an inert atmosphere and/or storing the compound having formula (1) in a container without light exposure such as, for example, in a dark room, by employing a light-shielded container such as amber glass, metal (SUS), wrapping the container with a light-shielding cover such as cloth, foil or film, using light-shielding coatings, etc.
The sample of the monoorgano tin trialkoxide compound having formula (1) may be stored for up to about three days to about one year, such as about a week or longer, not more than about ten months, a period of about two to six weeks, and all intermediate times as desired. Preferably the sample is stored at a temperature of less than about 30° C., less than about 25° C., less than about 20° C., and preferably greater than about −10° C. “Substantively without light exposure” may be understood to mean that the sample is protected from light exposure to the greatest possible extent, such as by storage in an amber or stainless steel vessel or other means of light shielding as are known in the art and/or as described above. In embodiments, the sample of the monoorgano tin trialkoxide compound undergoes substantively no decomposition after a storage time of hours, up to about three days to about one year, or longer, as described above.
Further aspects of the disclosure relate to a specific compound having formula (1), a monoorgano tin trialkoxide compound having formula (IV):
wherein each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms. In preferred embodiments, R is an isopropyl, t-butyl, t-amyl, 1,1,1-trifluoro-2-methylpropan-2-yl, trimethylsilyl, or phenyl group. The compound having formula (IV) has, in some embodiments, the same high purity levels described above for compounds having formula (1) and the same low levels of impurities described above, such as the diorganotin dialkoxide (di (2-methylpropenyl) tin dialkoxide) compound and tetraalkoxy tin compounds described above.
The organometallic tin compounds having formula (1) have at least one unsaturated bond in the carbon chain connected to the tin atom. These tin compounds form oxostannate cluster films with unsaturated bonds on a silicon wafer after vapor phase deposition or spin-on coating processes. It has been found that these unsaturated bonds provide more radiation sensitive Sn—C bonds that can be used to pattern structures lithographically. These are advantageous for EUV photoresist because the orbital interaction of the unsaturated bond affects the Sn—C bonds or the electronic state of tin and photosensitivity can be higher as a result. Further, the unsaturated bond can be reacted or polymerized with EUV exposure and the solubility of the tin cluster will be improved.
The radicals and anions generated by EUV light react with the unsaturated bonds and polymerize to form stronger R′SnO(3/2-x/2)(OH x (0<x<3) films. The above reactions cause the R′SnO(3/2-x/2)(OH)x (0<x<3) cluster film in the irradiated area to change greatly, resulting in a higher contrast as a resist.
Further aspects of the disclosure relate to organotin compounds having formula 4):
R′SnO(3/2-x/2)(OH)x (4)
In formula (4), 0<x<3 and R′ is a linear or branched unsaturated hydrocarbon group having about 2 to about 4 carbon atoms. Such compounds having formula (4) may be obtained by hydrolysis of a monoorgano tin trialkoxide compound having formula (1) as described herein.
Additional aspects of the disclosure relate to solutions containing organotin compounds having formula (4) and an organic solvent such as, without limitation, a hydrocarbon solvent or an aromatic solvent as described above. Further aspects of the disclosure relate to films containing organotin compounds having formula (4) as described herein.
Further aspects of the disclosure relate to compositions or mixtures containing a monoorgano tin trialkoxide compound having formula (1) and R′SnX3, where X is a halogen atom or an alkoxy group, as described above.
Additional aspects of the disclosure relate to a composition containing an organotin compound having formula (4) and an organotin compound having formula (5):
R′SNO(3/2-x/2)(OH)x (4)
R′″SnO(3/2-x/2)(OH)x (5)
In formulas (4) and (5), 0<x<3, R′ is a linear or branched unsaturated hydrocarbon group having about 2 to about 4 carbon atoms and R″ is an optionally substituted hydrocarbon group having 2 to about 20 carbon atoms, such as a hydrocarbon group substituted with a halogen atom, an alkoxy group, or a dialkylamino group (such as dimethylamino, diethylamino, etc.). Such compounds having formula (4) and (5) may be obtained by hydrolysis of a monoorgano tin trialkoxide compound having formula (1) as described herein.
Further aspects of the disclosure relate to a solution containing an organic solvent as described herein and a composition containing organotin compounds having formula (4) and formula (5), which may, in some embodiments, be obtained by hydrolysis of a monoorgano tin trialkoxide compound having formula (1) as described herein. Additional aspects of the disclosure relate to films prepared from or containing a composition containing organotin compounds having formula (4) and (5).
The R′ and R″ groups described herein have a hydrocarbon group of about 2 to about 20 carbons as a backbone, and, in addition to the substituents specified above, may have various organic substituents provided they do not react with unsaturated carbon-carbon bonds or hydrolyzable Sn—O bonds in the molecule. For example, halogen atoms, alkoxy groups, aryloxy groups, dialkylamino groups, diarylamino, alkylthio groups, arylthio groups, acyl groups, acyloxy groups, and alkoxycarbonyl groups may be included as such organic substituents.
The compounds described herein may be used as a resist material after hydrolysis or other reactions such as those known in the art. The compounds described herein may contain a group which is capable of forming an alkyltin oxo-hydroxo-patterning composition which can be hydrolyzed with water or other suitable reagents under suitable conditions to form an alkyltin oxo-hydroxo-patterning composition which can be represented by the formula R′SnO(3/2-x/2)(OH)x (0<x≤3). Hydrolysis and condensation reactions that can alter a compound with hydrolytic groups (X) are shown in the following reactions:
RSnX3+3H2O→RSn(OH)3+3HX
RSn(OH)3→RSnO(1.5-(x/2))OHx+(x/2) H2O
Alkyl oxohydroxy tin compounds obtained by hydrolysis using a composition containing R′SnX3 compounds as described above as raw material and the oxohydroxy tin compounds represented by the formula R′SnO(3/2-x/2)(OH)x (0<x<3) may be used as an EUV resist material.
A method for obtaining oxohydroxy tin compounds (R′SnO) by hydrolyzing a composition containing a R′SnX3 compound may involve, for example, volatilizing a composition containing a R′SnX3 compound under heating or reduced pressure, and reacting the vapor generated by volatilizing the composition on a substrate on which the tin composition is deposited, with water vapor, etc. (a dry method). In this method, a thin film containing the tin compound R′SnO may be formed on the substrate.
Another method may involve reacting a composition containing a R′SnX3 compound in solution or in a solid state with water, etc., and hydrolyzing it to obtain the oxohydroxy tin compounds (R′SnO). The oxohydroxy tin compounds (R′SnO) may then be used as a coating solution by dissolving it in an organic solvent, for example.
The solution may be applied to a substrate by any coating or printing technique, and a thin film or coating containing oxohydroxy tin compounds (R′SnO) may be formed on the substrate.
The thin film obtained by any of the above methods may be stabilized or partially condensed prior to light irradiation through drying, heating, or other processes. Generally, thin films or coatings have an average thickness of less than about 10 microns, and very thin submicron thin films, e.g., less than about 100 nanometers (nm), even less than about 50 nm or less than about 30 nm, may be desirable for patterning very small features. The resulting thin film or coating may be called a resist because the exposure processes a portion of the composition to be resistant to development/etching.
The thin or coating may be exposed to appropriate radiation, (e.g., extreme ultraviolet, electron beam, or ultraviolet), using a selected pattern or negative portion of the pattern to form a latent image with developer resistant and developer soluble regions. After exposure to the appropriate radiation and prior to development, the thin film or coating may be heated or otherwise reacted to further differentiate the latent image from the non-irradiated areas. The latent image is brought into contact with the developer to form a physical image, i.e., a patterned thin film or coating. The patterned thin film or coating may be further heated to stabilize the remaining patterned coating on the surface. The patterned coating may be used as a physical mask to perform further processing according to the pattern, e.g., etching of the substrate and/or attachment of additional materials. After the patterned resist is used as requested, the remaining patterned coating may be removed at an appropriate point in the processing, but the patterned coating may also be incorporated into the final structure.
The invention will now be described in connection with the following, non-limiting examples.
Vinyl tin trichloride was prepared according to the method of Rosenberg and Gibbons (JACS, 79, 2138-40 (1957)) by the redistribution reaction of tertavinyltin and tetrachlorotin. A 2.5 M solution of n-butyl lithium in hexanes (1102.7 g, 3.98 mol) was charged into a 2 L flask and cooled to −30° C. To this solution 2-trifluoromethyl-2-propanol (499.47 g, 3.90 mol) was added dropwise over the course of 30 min resulting in a vigorous exothermic reaction. The reaction temperature was maintained below 5° C. over the course of the addition, during which time an orange solution and some white solids formed. The reaction was warmed to room temperature, the walls of the reactor were rinsed with hexanes (300 g), and the reaction was stirred for an additional 2 h. After stirring at room temperature, the reaction mixture was cooled to −10° C. and a solution of vinyltrichlorotin (327.68 g, 1.30 mol in toluene (363.9 g) was added to the reaction mixture in portions over the course of 10 min, during which time the orange solution became a light-yellow color and a white precipitate formed. The reaction mixture was warmed to room temperature and stirred for 16 h. The resulting light-yellow solution was isolated by filtration and the solvent was removed from the filtrate under vacuum with gentle heating (5 torr, 35° C.) giving a viscous yellow liquid. The product was isolated as a colorless liquid after distillation. Yield=541 g (79.0%): bp 40° C. at 0.2 torr. 1H NMR (benzene-d6): δ 5.86 (2H, CH2), 1.37 (18H). 119Sn {1H}NMR: δ−290 ppm (99.58%); impurity peaks: divinylbis ((1,1,1-trifluoro-2-methylpropan-2-yl) oxy) stannane (−170 ppm, 0.33%), tetraalkoxytin (−415 ppm, 0.09%).
2-Methyl-1-propenyl tin trichloride was prepared according to method of Rosenberg et al. (JACS, 79, 2138-40 (1957)) by the redistribution reaction of tetra (2-methyl-1-propenyl) tin and tetrachlorotin in benzene or toluene. In a 2.0 L flask were placed 163.5 g hexanes and 58.7 g (0.22 moles) of 2-methyl-1-propenyl tin trichloride under N2 and cooled to 0° C. A solution of 6.66 L of potassium t-butoxide (1M in THF) was added dropwise while maintaining the pot temperature at 0 to −10° C. The mixture was warmed to room temperature. Once at room temperature the reaction was heated to 50° C. for 5 hours and stirred overnight with no heat. The solvent was removed under reduced pressure and the target compound was collected at 75.5-76.7° C. at 0.376 torr to yield 2-methyl-1-propenylltris (t-butoxy) tin. 119Sn NMR (400 mHz; neat): δ−252.345. 1H NMR (400 mHz; C6D6): δ 5.3 (m, 1H), δ 1.9 (s, 3H), δ 1.55 (s, 3H), 1.40 (s 27H).
Allyl tin trichloride was prepared according to method of Rosenberg et al. (JACS, 79, 2138-40 (1957)) by the redistribution reaction of tetraallyltin and tetrachloro tin in benzene or toluene. In a 5.0 L flask were placed 254.99 g (2.27 moles) of t-BuOK and 2.2 kg of hexanes (26 moles) and cooled to 0° C. . . . To this 189.08 g (0.75 moles) of allyl tin trichloride was added dropwise while maintaining the pot temperature at 0 to 10° C. After addition, the solution was warmed to room temperature and stirred for additional 2 hours. The mixture was filtered through celite under N2 and washed with an additional 200 ml hexanes twice. The solvent was removed under reduced pressure, and the diallyl tin impurity residue was removed by fractional distillation under reduced pressure. The allyltris (t-butoxy) tin was collected at 53.0-55.0° C. at 0.18 torr. 119Sn NMR (400 mHz; neat): δ−222.084. 1H NMR (400 mHz; C6D6): δ 5.7-5.9 (m, 1H), δ 4.8-5.0 (m, 2H), δ 2.1 (d, 2H), δ 1.42 (d, 2H), δ 1.40 (S 27H).
3-buten-1-yltintrichloride was prepared according to method of Jousseaume et al. (Organometallics; 14, 685-689 (1995)) by the redistribution reaction of 3-buten-1-yltricyclohexyltin and tetrachlorotin or the reaction of 3-buten-1-yltripheny-1-tin and tetrachlorotin in toluene. In a 5.0 L flask were placed 2.0 kg (23 moles) hexanes and 850.0 g (3.07 moles) of n-hexyl lithium under N2 and cooled to 0° C. A premix containing 57.43 g (0.62 moles) of toluene and 229.71 g (3.10 moles) of tert-butanol was added dropwise while maintaining the pot temperature at 0 to 10° C. The mixture was warmed to room temperature and stirred for an additional two hours before 280.16 g (1 mol) 3-buten-1-yltintrichloride was added dropwise at 0 to 10° C. The reaction was warmed to room temperature and stirred overnight. The mixture was filtered through celite under N2 and washed with an additional 200 ml hexanes twice. The solvent was removed under reduced pressure, and the target 3-buten-1-yltris (t-butoxy) tin compound was collected at 59.4-62.8° C. at 0.4 torr. 119Sn NMR (400 mHz; neat): δ−194.423. 1H NMR (400 mHz; C6D6): δ 5.7-5.9 (m, 1H), δ 4.8-5.0 (m, 2H), δ 2.1 (d, 2H), δ 1.42 (d, 2H), δ 1.40 (S 27H).
Vinyl tin trichloride was prepared according to the method of Rosenberg et al. (JACS, 79, 2138-40 (1957)) by the redistribution reaction of tetravinyltin and tetrachlorotin. In a 5.0 L, flask were placed 189.08 g (0.75 moles) of vinyl tin trichloride and 400 ml of anhydrous hexanes (3 moles). To this was added, with good stirring and over a 1-hour period, 2.27 L (2.27 moles) of t-BuOK (1M in THF) at a pot temperature of −10° C. The solution was warmed to room temperature and stirred for an additional two hours. The mixture was filtered through celite under N2 and washed with an additional 200 ml hexanes twice. The solvent was removed under reduced pressure, and the residue was distilled under reduced pressure (129° C., 0.5 torr) to yield 128 g (47%) of vinyl tris (t-butoxy) tin. 119Sn NMR (400 mHz; neat): δ−256.87. 1H NMR (400 mHz; C6D6): δ 5.8-6.2 (m. 3H, vinyl), δ 1.42 (s, 27H, Ot-Bu).
It will be appreciated by those skilled in the art that changes could be made to the embodiments described above without departing from the broad inventive concept thereof. It is understood, therefore, that this invention is not limited to the particular embodiments disclosed, but it is intended to cover modifications within the spirit and scope of the present invention as defined by the appended claims.
This application claims priority to co-pending U.S. Provisional Application No. 63/465,919, filed May 12, 2023, the disclosure of which is herein incorporated by reference.
| Number | Date | Country | |
|---|---|---|---|
| 63465919 | May 2023 | US |
