Claims
- 1. A process for making a radiation emitting semiconductor device comprising the steps of depositing an oxide on one side of an emitting device structure having an emitting junction, selectively removing an annular region of the oxide, selectively etching the exposed annular portion of the device structure to form a mesa type structure, selectively removing the oxide over the mesa structure and then selectively etching further to round the top of the mesa structure.
- 2. The process according to claim 1 wherein the mesa structure is formed over the emitting junction.
- 3. The process according to claim 1 wherein the rounded mesa structure forms a lens.
- 4. The process according to claim 1 wherein a reflective material is deposited around the rounded mesa structure.
Parent Case Info
This is a division of application Ser. No. 626,406, filed Oct. 28, 1975, now abandoned.
US Referenced Citations (6)
Divisions (1)
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Number |
Date |
Country |
Parent |
626406 |
Oct 1975 |
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