High solids hBN slurry, hBN paste, spherical hBN powder, and methods of making and using them

Abstract
The present invention relates to a method for making a hexagonal boron nitride slurry and the resulting slurry. The method involves mixing from about 0.5 wt. % to about 5 wt. % surfactant with about 30 wt. % to about 50 wt. % hexagonal boron nitride powder in a medium under conditions effective to produce a hexagonal boron nitride slurry. The present invention also relates to a method for making a spherical boron nitride powder and a method for making a hexagonal boron nitride paste using a hexagonal boron nitride slurry. Another aspect of the present invention relates to a hexagonal boron nitride paste including from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride. Yet another aspect of the present invention relates to a spherical boron nitride powder, a polymer blend including a polymer and the spherical hexagonal boron nitride powder, and a system including such a polymer blend.
Description
FIELD OF THE INVENTION

The present invention relates to a method for making a hexagonal boron nitride slurry, a method for making a hexagonal boron nitride paste, and a method for making a spherical hexagonal boron nitride powder. The present invention also relates to the resulting hexagonal boron nitride slurry, paste, and spherical hexagonal boron nitride powder, and the use of the spherical hexagonal boron nitride powder in a polymer blend and system including a heat source and a heat sink.


BACKGROUND OF THE INVENTION

Microelectronic devices, such as integrated circuit chips, are becoming smaller and more powerful. The current trend is to produce integrated chips which are steadily increasing in density and perform many more functions in a given period of time over predecessor chips. This results in an increase in the electrical current used by these integrated circuit chips. As a result, these integrated circuit chips generate more ohmic heat than the predecessor chips. Accordingly, heat management has become a primary concern in the development of electronic devices.


Typically, heat generating sources or devices, such as integrated circuit chips, are mated with heat sinks to remove heat which is generated during their operation. However, thermal contact resistance between the source or device and the heat sink limits the effective heat removing capability of the heat sink. During assembly, it is common to apply a layer of thermally conductive grease, typically a silicone grease, or a layer of a thermally conductive organic wax to aid in creating a low thermal resistance path between the opposed mating surfaces of the heat source and the heat sink. Other thermally conductive materials are based upon the use of a binder, preferably a resin binder, such as a silicone, a thermoplastic rubber, a urethane, an acrylic, or an epoxy, into which one or more thermally conductive fillers are distributed.


Typically, these fillers are one of two major types: thermally conductive, electrically insulative or thermally conductive, electrically conductive fillers. Aluminum oxide, magnesium oxide, zinc oxide, aluminum nitride, and boron nitride are the most often cited types of thermally conductive, electrically insulative fillers used in thermal products. Boron nitride, and, more specifically, hexagonal boron nitride (hBN) is especially useful in that it has excellent heat transfer characteristics and is relatively inexpensive.


For fillers, it is desirable to achieve as high a thermal conductivity (or as low a thermal resistant) as possible. In order to achieve sufficient thermal conductivity with presently used fillers, such as hBN, it is desirable to employ high loadings of filler in the binder. However, because of the flaky (platelet) structure of hBN particles, achieving solids loading higher than 20 vol. % becomes difficult.


U.S. Pat. Nos. 5,898,009, 6,048,511, and European Patent No. EP 0 939 066 A1, all to Shaffer et al., teach an alternate methodology to further improve solids hBN loading. This involves: (a) cold pressing crushed hBN powder, (b) breaking the cold pressed compact into smaller pieces, and (c) screening the resulting pieces to achieve agglomerates in a desired size range. These agglomerates, however, are non-spherical (angular shape) with jagged short edges. This shape is not ideal for optimizing solids loading due, primarily, to the following reasons: (1) non-spherical shaped agglomerates do not slide against each other easily, thus raising the viscosity; and (2) non-spherical shaped agglomerates have higher surface area and hence absorb greater amounts of polymer on their surface which results in lower amounts of free available polymer, thus, once again raising the viscosity.


Thus, there is a need for thermally conductive filler materials which can be used at high loading levels to achieve sufficient thermal conductivity without increasing viscosity. The present invention is directed to overcoming this deficiency in the art.


SUMMARY OF THE INVENTION

The present invention relates to a method for making a hexagonal boron nitride slurry. The method involves mixing from about 0.5 wt. % to about 5 wt. % surfactant with about 30 wt. % to about 50 wt. % hexagonal boron nitride powder in a medium under conditions effective to produce a hexagonal boron nitride slurry.


The present invention also relates to a hexagonal boron nitride slurry including from about 0.5 wt. % to about 5 wt. % surfactant and about 30 wt. % to about 50 wt. % hexagonal boron nitride powder in a medium.


Another aspect of the present invention is a method for making spherical boron nitride powder which includes providing a hexagonal boron nitride slurry, spray drying the slurry under conditions effective to produce spherical boron nitride powder, including spherical agglomerates of boron nitride platelets, and sintering the spherical boron nitride powder.


Yet another aspect of the present invention relates to a spherical boron nitride powder including spherical agglomerates of boron nitride platelets.


The present invention also relates to a method for making a hexagonal boron nitride paste. This method involves providing a hexagonal boron nitride slurry and treating the slurry under conditions effective to produce a hexagonal boron nitride paste including from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride.


Another aspect of the present invention relates to a hexagonal boron nitride paste including from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride in a medium.


The present invention further relates to a polymer blend including a polymer and a powder phase including spherical agglomerates of hexagonal boron nitride platelets. The powder phase is distributed homogeneously within the polymer.


Another aspect of the present invention relates to a system including a heat source, a heat sink, and a thermally conductive material connecting the heat source to the heat sink, wherein the thermally conductive material includes a powder phase including spherical agglomerates of hexagonal boron nitride platelets.


The hexagonal boron nitride slurry of the present invention allows high solids loading while keeping low viscosity. In addition, the slurry can be used to produce high yields of hexagonal boron nitride powder and paste. The spherical shape of the hBN agglomerates of the present invention reduces inter-agglomerate friction, thus allowing higher solids loading in a polymer and, accordingly, higher thermal conductivity. In addition, spherical shaped hBN agglomerates have the lowest surface area possible, which reduces the amount of adsorbed polymer on the agglomerate surfaces, thus freeing up more polymer to improve flowability/reduce viscosity. Moreover, in the spherical hBN powder of the present invention, the distribution of hBN platelets in the spherical agglomerates is random (as compared to aligned flakes in pressed agglomerates of the prior art). Thus, spherical hBN filled polymer in accordance with the present invention should show more isotropic thermal conductivity and higher thermal conductivity through the thickness of the polymer.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a graphic showing the structure of boron nitride, where many of these units make up a BN platelet.



FIG. 2 is a graph showing the rheological properties of a 50% solids BN slurry with various surfactants.





DETAILED DESCRIPTION OF THE INVENTION

The present invention relates to a method for making a hexagonal boron nitride slurry. The method involves mixing from about 0.5 wt. % to about 5 wt. % surfactant with about 30 wt. % to about 50 wt. % hexagonal boron nitride powder in a medium under conditions effective to produce a hexagonal boron nitride slurry.


As used herein, a slurry is a thin mixture or suspension of a liquid (i.e., aqueous or non-aqueous medium) and insoluble matter.


Hexagonal boron nitride is an inert, lubricious ceramic material having a platey hexagonal crystalline structure (similar to that of graphite) (“hBN”). The well-known anisotropic nature of hBN can be easily explained by referring to FIG. 1, which shows hexagons of an hBN particle. The diameter of the hBN particle platelet is the dimension shown as D in FIG. 1, and is referred to as the a-direction. BN is covalently bonded in the plane of the a-direction. The particle thickness is the dimension shown as Lc, which is perpendicular to diameter and is referred to as the c-direction. Stacked BN hexagons (i.e., in the c-direction) are held together only by Van der Waals forces, which are relatively weak. When a shearing force greater than the weak Van der Waals force is imparted across of the planes of BN hexagons, the weak Van der Waals force is overcome and the planes slide relative to each other. The relative ease with which these planes of BN slide against each other may be one of the reasons for the high lubricity of hBN.


Preferably, the hBN is a powder having a highly ordered hexagonal structure. Such powders have a crystallization index (Hubacek, “Hypothetical Model of Turbostratic Layered Boron Nitride,” J. Cer. Soc. of Japan, 104:695-98 (1996), which is hereby incorporated by reference in its entirety) of at least 0.12 (quantification of highly hexagonal hBN) and, preferably, greater than 0.15. Preferably, the hBN powder has a crystallinity of about 0.20 to about 0.55, most preferably, from about 0.30 to about 0.55.


Typically, this starting powder is produced by a “high fire” treatment of a raw, essentially turbostratic (amorphous) boron nitride powder (see Hagio et al., “Microstructural Development with Crystallization of Hexagonal Boron Nitride,” J. Mat. Sci. Lett. 16:795-798 (1997), which is hereby incorporated by reference in its entirety) to produce what is conventionally referred to as “high purity hexagonal boron nitride.” In a preferred embodiment, a fine turbostratic BN powder having a crystallization index of less than 0.12 is heat treated in nitrogen at about 1400 to 2300° C. for about 0.5-12 hours. This heat treatment typically acts to produce a more crystalline hBN platelets, as the fine, <1 μm crystallites, of turbostratic powder platelets become more ordered (crystallized) and larger (>1 micron) during the heat treatment.


Preferably, the particles of the hBN starting material have an average particle-platelet size of from about 2 μm to about 20 μm, more preferably between about 2 μm and 12 μm, and most preferably, between about 4 μm and about 12 μm. As used herein, “particle size” or “diameter” of the hBN particle platelet is the dimension shown as D in FIG. 1. This is typically measured by scanning electron microscopy and laser scattering techniques using, e.g., a Leeds & Northrup Microtrac X100 (Clearwater, Fla.).


In another embodiment, the hBN starting material has an oxygen content of from about 0 wt. % to about 1.0 wt. %, preferably, from about 0 wt. % to about 0.5 wt. %. The use of hBN starting material with a low oxygen content produces boron nitride powders with a higher tap density. Higher tap density powders have many advantages as fillers in thermal management applications including: higher thermal conductivity, higher powder loading in a polymer; stronger agglomerates of hBN platelets (leading to improved metal adhesion in polymer BN composites); and lower porosity within the agglomerates (which results in less infiltration of polymer resin or liquid into the agglomerate).


Preferably, the hBN slurry of the present invention includes from about 40 wt. % to about 50 wt. % hexagonal boron nitride powder.


In yet another embodiment, the hBN starting material has a surface area of from about 5 m2/g to about 30 m2/g, and more preferably, about 7 m2/g to about 20 m2/g.


The hBN slurry of the present invention may include an aqueous or non-aqueous medium. Suitable non-aqueous medium include isopropyl alcohol, methanol, and ethanol.


The hexagonal boron nitride slurry of the present invention is a “high solids” hBN slurry which, in one embodiment, includes from about 30 wt. % to about 50 wt. % hexagonal boron nitride solids loading. In another embodiment, the high solids hexagonal boron nitride slurry of the present invention includes from about 40 wt. % to about 50 wt. % hexagonal boron nitride solids loading.


Suitable surfactants for the above method of the present invention include polycarboxylic acids (e.g., Rhodaline 111M™ available from Rhodia, Inc., Cranbury, N.J.), silanes (e.g., Z-6040 Silane™ available from Dow Chemical, Midland Mich.), and organometallic compounds (e.g., APG™ available from Cavedon Chemical Co., Woonsocket, R.I.).


The hBN slurry of the present invention may include additives, such as binders and sintering additives. Suitable binders include polyethylene glycol, polyvinyl alcohol, glycerol, and latex. When the hBN slurry of the present invention is used to produce hBN powder, the slurry may contain sintering additives which include, but are not limited to, yttria, CaO, MgO, CeB6, and boron.


The present invention also relates to a hexagonal boron nitride slurry including from about 0.5 wt. % to about 5 wt. % surfactant and about 30 wt. % to about 50 wt. % hexagonal boron nitride powder in a medium.


The hBN slurry of the present invention achieves high solids loading while keeping low viscosity. In particular, solids loading of from about 30 wt. % to about 50 wt. % is achieved in the high solids hBN slurry of the present invention. Although not wishing to be bound by theory, it is believed that because of the flaky, non-wettable nature of hBN, the use of from about 0.5 wt. % to about 5 wt. % surfactant in the slurry of the present invention allows such high solids loading. This is in contrast to prior art methods which used about 0.1 wt. % to about 0.5 wt. % surfactant to achieve a BN solids loading of from about 20 wt. % to about 25 wt. %.


The high solids hBN slurry of the present invention may be used to produce high yields of hexagonal boron nitride powder and paste, as described in detail below.


Another aspect of the present invention relates to a method for making spherical boron nitride powder which includes providing a hexagonal boron nitride slurry, spray drying the slurry under conditions effective to produce spherical boron nitride powder including spherical agglomerates of boron nitride platelets, and sintering the spherical boron nitride powder.


As used herein, an agglomerate is a collection of boron nitride platelets bonded together. A non-agglomerated boron nitride platelet comprises one or more crystallites.


In one embodiment, the spherical agglomerates of boron nitride platelets have an average agglomerate size or diameter of from about 10 microns to about 500 microns.


In another embodiment, the majority of boron nitride agglomerates have an average diameter of from about 30 microns to about 150 microns.


The hexagonal boron nitride slurry is preferably a high solids hexagonal boron nitride slurry in accordance with the present invention.


Techniques for spray drying are known in the art and are described in, for example, James S. Reed, Introduction to the Principles of Ceramic Processing, John Wiley & Sons, Inc. (1988), which is hereby incorporated by reference in its entirety.


Preferably, the sintering is carried out at a temperature of at least about 1800° C. for about 1 to about 4 hours, more preferably, for about 2 to about 3 hours. Further, the sintering is preferably carried out at from about 1800° C. to about 2400° C., more preferably, from about 2000° C. to 2400° C., most preferably, from about 2000° C. to about 2100° C. Suitable atmospheres for sintering include inert gas, nitrogen, and argon. In one embodiment, the sintering is carried out in a vacuum. In an another embodiment, the sintering is carried out under conditions of at least 1 atmosphere of pressure.


The resulting powder tap density preferably ranges from about 0.4 g/cc to about 0.7 g/cc.


In accordance with the present invention, the sintering step improves the thermal diffusivity and, thus, thermal conductivity of the resulting boron nitride powder and hardens and strengthens the boron nitride powder. Although not wishing to be bound by theory, it is believed that during sintering, individual grains of boron nitride grow into each other to form an interconnected network. The interconnectivity of the resulting sintered body results in increased thermal diffusivity and increased thermal conductivity.


In one embodiment, the spherical boron nitride powder is classified under conditions effective to obtain a desired agglomerate size distribution. As used herein, an agglomerate size distribution is the range of agglomerates from the smallest agglomerate present to the largest agglomerate present, as defined by characteristic diameter of the agglomerates, wherein the agglomerates span the range. Suitable methods for classification include screening, air classifying, and elutriation, (see Chem. Eng. Handbook, Perry & Chilton, 5th Ed., McGraw-Hill (1973), which is hereby incorporated by reference in its entirety). As such classification methods are well known in the art, they will only be discussed briefly herein.


Screening is the separation of a mixture of various sized solid particles/agglomerates into two or more portions by means of a screening surface. The screening surface has openings through which the smaller particles/agglomerates will flow, while the larger particles/agglomerates remain on top. This process can be repeated for both the coarse and small particle/agglomerate size streams, as many times as necessary, through varying screen openings to obtain a classification of particles/agglomerates into a desired particle/agglomerate size range.


Air classifiers rely upon air drag and particle inertia, which depends upon particle/agglomerate size, to facilitate the separation of fine particles/agglomerates from coarse particles/agglomerates.


One design for elutriation is a vertical gravity type elutriator, where fluid flowing up through a column carries fine particles/agglomerates smaller than a critical size. The critical size is determined by the settling velocity of the particle/agglomerate in the fluid.


A desired agglomerate range or agglomerate size distribution (ASD) is determined by the intended use of the spherical boron nitride powder. For example, for compliant interface pads, where the polymer is a low durometer silicone rubber, the desired ASD is such that the coarsest agglomerate diameter is smaller than the thickness of the interface pad. For situations in which flexibility of a polymer including the spherical boron nitride is important, large agglomerates, e.g., above 150 microns, are reduced in concentration or removed entirely, as the use of smaller agglomerates improves flexibility of the resulting polymer blend. In addition, a plurality of agglomerate size ranges may be combined in the spherical boron nitride powder to achieve the desired flexibility and thermal conductivity, as smaller agglomerates will fit within the interstitial spaces of the larger agglomerates.


Preferably, the ASD is 30 to 125 microns (more preferably 74 to 125 microns, most preferably 74 to 105 microns), or 20 to 74 microns (more preferably 38 to 74 microns, most preferably 38 to 53 microns), or 10 to 38 microns (more preferably 20 to 38 microns).


The present invention also relates to a spherical boron nitride powder including spherical agglomerates of boron nitride platelets.


The spherical boron nitride powder of the present invention can be used as a filler for thermal management applications, e.g., in composites, polymers, and fluids, as described below. The spherical boron nitride powder can also be used in hot pressing, due to the improved packing density and uniform fill characteristics of the powder. Moreover, the resulting spherical boron nitride powder can be used as precursor feed stock material in the conversion of hexagonal boron nitride to cubic boron nitride. In the conversion of high purity hexagonal boron nitride to cubic boron nitride, the compacted form of boron nitride is subjected to extremely high pressures and temperatures within the stable region of the cubic boron nitride phase diagram. The density of the boron nitride pellets is significant to the economics of the cubic boron nitride conversion process.


Another aspect of the present invention is a method for making a hexagonal boron nitride paste. This method involves providing a hexagonal boron nitride slurry and treating the slurry under conditions effective to produce a hexagonal boron nitride paste including from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride.


As used herein, as paste is a semisolid preparation.


The hexagonal boron nitride slurry is preferably a high solids hexagonal boron nitride slurry in accordance with the present invention.


In one embodiment, treating comprises placing the slurry in a plaster slip cast mold. The plaster mold will absorb water from the slurry to produce a hexagonal boron nitride paste according to the present invention. Knowing the porosity of the mold, e.g., from about 1 to about 5 μm, the solids content of the hexagonal boron nitride paste can be controlled by the casting time.


In another embodiment, treating comprises vacuum filtration of the slurry until the desired amount of liquid is removed from the slurry to produce a hexagonal boron nitride paste according to the present invention.


Yet another aspect of the present invention relates to a hexagonal boron nitride paste including from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride in a medium.


The hBN paste of the present invention may include an aqueous or non-aqueous medium. Suitable non-aqueous medium include isopropyl alcohol, methanol, and ethanol.


Preferably, the hexagonal boron nitride paste includes from about 65 wt. % to about 75 wt. % solid hexagonal boron nitride.


The hexagonal boron nitride paste of the present invention can be used to form solids of varying shapes, e.g., by an extrusion process. Such solids can then be used, for example, as a filler in thermal management applications.


The present invention further relates to a polymer blend including a polymer and a powder phase including spherical agglomerates of hexagonal boron nitride platelets. The powder phase is distributed homogeneously within the polymer.


Suitable polymer systems may include melt-processable polymers, polyesters, phenolics, silicone polymers (e.g., silicone rubbers), acrylics, waxes, thermoplastic polymers, low molecular weight fluids, and epoxy molding compounds.


In one embodiment, the polymer blend comprises from about 30 wt. % to about 80 wt. % spherical boron nitride powder. However, the loading of the spherical boron nitride powder into the polymer blend is determined by the desired flexibility and thermal conductivity of the resulting blend. For example, lower loading of the spherical hBN powder, such as 30 wt. % to 50 wt. %, is desirable for high flexibility applications, but results in lower thermal conductivity. Thus, loading at from about 50 wt. % to about 80 wt. % is desirable in high thermal conductivity/low flexibility applications.


The thermal conductivity of the resulting polymer blend is determined by loading, dispersion, and other factors. In one embodiment, the polymer blend has a thermal conductivity of from about 1 W/mK to about 15 W/mK.


Because of the spherical shape of the hBN agglomerates in the polymer blends of the present invention, inter-agglomerate friction is reduced, thus allowing higher solids loading and, accordingly, higher thermal conductivity.


In addition, spherical shaped hBN agglomerates have the lowest surface area possible, which reduces the amount of adsorbed polymer on the agglomerate surfaces, thus freeing up more polymer to improve flowability/reduce viscosity.


Typically, hBN powder for loading into polymers has been produced by a pressing process (see, e.g., U.S. Pat. Nos. 5,898,009, 6,048,511, and European Patent No. EP 0 939 066 A1 all to Shaffer et al., which are hereby incorporated by reference in their entirety), which produces hBN powder including non-spherical agglomerates of aligned hBN platelets. However, in the spherical hBN powder of the present invention, the distribution of hBN platelets is random (as compared to aligned flakes in pressed agglomerates). Thus, spherical hBN filled polymer film in accordance with the present invention should show more isotropic thermal conductivity and higher thermal conductivity through the thickness of the polymer.


Another aspect of the present invention relates to a system including a heat source, a heat sink, and a thermally conductive material connecting the heat source to the heat sink, wherein the thermally conductive material includes a powder phase including spherical agglomerates of hexagonal boron nitride platelets.


As used herein, a heat sink is a body of matter, gaseous, liquid, or solid, that receives a heat transfer from its surrounding environment.


Suitable heat sources for the present invention include integrated circuit chips, power modules, transformers, and other electronic devices.


Suitable heat sinks in accordance with the present invention include finned aluminum, copper, berilium, and diamond.


As used herein, a thermally conductive material may be a composite, polymer, or fluid. In one embodiment, the thermally conductive material is a polymer, such as a melt-processable polymer, a polyester, a phenolic, a silicone polymer (e.g., silicone rubbers), an acrylic, a wax, a thermoplastic polymer, a low molecular weight fluid, or an epoxy molding compound.


The thermally conductive material preferably includes from about 30 wt. % to about 80 wt. % spherical boron nitride powder and has a thermal conductivity of from about 1 W/mK to about 15 W/mK.


EXAMPLES
Example 1
Production of High BN Solids Loaded Slurry

A 50 wt. % solid loaded BN slurry was made using the mix composition as set forth in Table 1:









TABLE 1







Mix composition for 50 wt. % solid loaded BN slurry.










Solids-50 wt. %

Liquids-50 wt. %






XP1011 BN1
1400 g
85% DI water (pH 9)
1700 g


HPP 325 BN2
 500 g
10% IPA4
 200 g


Y2O33
 100 g
 5% 111 M5 (surfactant)
 100 g




Opt. 4% glycerol






1Saint-Gobain Ceramics & Plastics, Amherst, NY




2Saint-Gobain Ceramics & Plastics, Amherst, NY




3Molycorp, Inc., Mountain Pass, CA




4Alfa Aesar, Ward Hill, MA




5Rhodaline 111 M, Rhodia, Inc., Cranbury, NJ








The correct amounts of powders and liquids set forth in Table 1 were measured out. The deionized (DI) water was then pH adjusted to 9-9.5. Surfactant was added to isopropyl alcohol (IPA) in a large “final mix” sized bucket (Nalgene Nunc, Rochester, N.Y.), approximately 10 L. The surfactant/IPA solution was agitated using air powered propeller mixer (Lightnin, Rochester, N.Y.). Powder was slowly added to the surfactant/IPA solution until the solution could no longer accept more powder. This was done to “coat” the majority of the BN powder with a thin layer of IPA, which wets the BN surface easier than DI water. pH balanced DI water was added as needed maintain a mixable viscosity of slurry. Hand mixing with a spatula may be required to incorporate powder from container wall.


To ensure good mixing, the slurry was pumped through a high shear mill (Netzsch Mill, Netzsch, Inc., Exton, Pa.). Mill times determined “mixedness” and surface area. An auxiliary cooling unit (Chiller, Neslab Instruments, Portsmouth, N.H.) needed to be attached to mill to keep slurry temperature low enough to decrease the evaporation rate of IPA.


After all BN powder was added, the pH of the slurry was measured to be 8.5 and adjusted to 9 by the addition of NaOH. The slurry at this stage appeared quite viscous but exhibited good shear thinning.


The effect of slurry viscosity versus shear rate for several different surfactants was measured. The surfactant content, as shown in Table 1, was 5 wt. % of the of the total solids content. The results are shown in FIG. 2, where Rhodaline 111M™ (Rhodia, Inc., Cranbury, N.J.) proved most effective at reducing viscosity.


Subsequently, the slurry was transferred to a sealed container for use as needed.


Example 2
Mixing of Sintering Additives

The addition of sintering additives to BN powder was ideally done in a slurry form. This helped create a homogeneous blend of BN and sinter aid. If slurry blending was not possible or practical, a dry mixing method was used.


The technique used to make dry mixes depended on the amount of sample required. If the sample size was approximately less than 25 g, a mortar and pestle was used to mix the powders. The powder was mixed like this for 10 minutes then used as needed.


If larger amounts of powder were needed, a paint shaker was used to blend the powders. When using the paint shaker, ⅜″ Si3N4 media was used in a Nalgene Nunc container (Rochester, N.Y.) to assist in blending powders. The amount of media used was approximately ¼ the height of the powder column in the Nalgene container. An appropriately sized container was used for each size batch. The paint shaker was set to run for 25 minutes and mixing began. After mixing, Si3N4 media was screened out and the powder was collected and pressed. If pressing was difficult, a few weight percent of low molecular weight polyethylene glycol was added in the mixing stage as a binder.


Example 3
Spray Drying of BN Slurry

The BN slurry of Example 1 was spray dried in order to produce a BN powder for die-fill applications. Spray drying also afforded the quickest way to produce a homogeneous, multi-component, pressureless sinter powder system. Although a 50 wt. % solids BN slurry seemed very highly loaded compared to other ceramic systems, it contained significant amounts of water. In order to evaporate all this water in the available residence time, and inlet and outlet temperatures had to be increased. Along with these changes, the flow rate of the slurry was slowed down and the revolutions per minute (rpm) of the atomizer increased. In addition, 4 wt. % glycerol was added into the slurry before spray drying if it was going to be used for dry pressing applications. During spray drying, the slurry was constantly mixed.


The inlet temperature was set to 235° C. which gave an outlet temperature of 85° C. The flow rate of the slurry was 60 ml/minute and the atomizer (Pentronix, Detroit, Mich.) was set at 12,500 rpm. These settings generally produced spherical BN powder in the size range of −150 μm/+30 μm. The lower end of the scale was quite variable depending on the dust collector damper setting. The powder collected had a moisture content of approximately 0.25-0.5%.


The slurry example outlined above required about 70 minutes to put through the spray dryer under these conditions. The powder yield was about 80% after screening out coarse particles, accounting for wall material, and material collected in the cyclone.


All of the conditions above are only valid for the spray dryer used in the present Example. Minor changes would be needed for work in any other system, which is expected. Larger dryers would allow more flexibility in particle size distribution and higher production rates.


The effect of wt. % boron nitride solids slurry loading on spray dried properties was then tested, as shown in Table 2.









TABLE 2







Effect of wt. % BN solids slurry loading on spray dried properties.













Solids
LPD
Tap Density
Flow



Powder
(wt. %)
(g/cc)
(g/cc)
(sec)
Sizing (mm)















A
25
0.462
0.55 
55.7
−150/+75


B
25
0.492
0.586
57.4
 −75


C
25
n/a
0.541

 −45


D
50
0.533
0.62 
54
 −75


E
50
0.574
0.652
43.2
−150


XP
n/a
0.44 
0.562
75.3
−105/+74









Powders B and D, which were screened to the same size, showed that as solids loading increased, the density of the resulting spray dried powder increased.


Example 4
Production of BN Clay-Like Paste by the Slip Cast Method

Slurry from Example 1 was poured into a plaster slip cast mold. Pressure was applied and the set-up left to cast on the order of 12 hours. Because the molds were “blinded” so quickly, casting stopped and no more moisture was removed from the slip. The resultant material was a thick pasty material. The solids content was 76%.


Example 5
Production of BN Clay-Like Paste by the Vacuum Filtration Method

Slurry from Example 1 was poured into a Buchner Funnel with filter paper. A vacuum was pulled on the slurry from below. The water from the system flowed into a graduated flask. When the desired amount of water was removed from the slurry, the vacuum was removed. The BN paste sample, which had a solids content of 74%, was collected and sealed in an airtight bag for later use.


Although preferred embodiments have been depicted and described herein, it will be apparent to those skilled in the relevant art that various modifications, additions, substitutions and the like can be made without departing from the spirit of the invention and these are therefore considered to be within the scope of the invention as defined in the following claims.

Claims
  • 1. A method for making spherical boron nitride powder comprising: providing a hexagonal boron nitride slurry;spray drying the slurry under conditions effective to produce spherical boron nitride powder comprising spherical agglomerates of boron nitride platelets; andsintering the spherical boron nitride powder.
  • 2. The method according to claim 1, wherein the hexagonal boron nitride slurry comprises from about 30 wt. % to about 50 wt. % hexagonal boron nitride powder.
  • 3. The method according to claim 1, wherein the spherical boron nitride powder has a tap density of about 0.4 g/cc to about 0.7 g/cc.
  • 4. The method according to claim 1, wherein the sintering is carried out at a temperature of from about 1800° C. to about 2400° C.
  • 5. The method according to claim 1, wherein the spherical agglomerates of boron nitride platelets have an average agglomerate diameter of from about 10 microns to about 500 microns.
  • 6. The method according to claim 5, wherein the majority of boron nitride agglomerates have an average diameter of from about 30 microns to about 150 microns.
  • 7. The method according to claim 1 further comprising; classifying the spherical boron nitride powder under conditions effective to obtain a desired agglomerate size distribution.
  • 8. The method according to claim 7, wherein the classifying is selected from the group consisting of screening, air classifying, and elutriation.
  • 9. A spherical boron nitride powder comprising spherical agglomerates of boron nitride platelets.
  • 10. The spherical boron nitride powder according to claim 9, wherein the spherical boron nitride powder has a tap density of about 0.4 g/cc to about 0.7 g/cc.
  • 11. The spherical boron nitride powder according to claim 9, wherein the spherical agglomerates of boron nitride platelets have an average agglomerate diameter of from about 10 microns to about 500 microns.
  • 12. The spherical boron nitride powder according to claim 11, wherein the majority of boron nitride agglomerates have an average diameter of from about 30 microns to about 150 microns.
  • 13. A method for making a hexagonal boron nitride paste comprising: providing a hexagonal boron nitride slurry andtreating the slurry under conditions effective to produce a hexagonal boron nitride paste comprising from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride.
  • 14. The method according to claim 13, wherein the hexagonal boron nitride slurry comprises from about 30 wt. % to about 50 wt. % hexagonal boron nitride solids loading.
  • 15. The method according to claim 13, wherein said treating comprises placing the slurry in a plaster mold.
  • 16. The method according to claim 13, wherein said treating comprises vacuum filtration.
  • 17. A hexagonal boron nitride paste comprising from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride in a medium.
  • 18. The hexagonal boron nitride paste according to claim 17, wherein the medium is an aqueous medium.
  • 19. The hexagonal boron nitride paste according to claim 18, wherein the medium is a non-aqueous medium selected from the group consisting of isopropyl alcohol, methanol, and ethanol.
  • 20. A polymer blend comprising: a polymer, anda powder phase comprising spherical agglomerates of hexagonal boron nitride platelets, wherein the powder phase is distributed homogeneously within the polymer.
  • 21. The polymer blend according to claim 20, wherein the powder phase has a tap density of about 0.4 g/cc to about 0.7 g/cc.
  • 22. The polymer blend according to claim 20, wherein the polymer is selected from the group consisting of melt-processable polymers, polyesters, phenolics, silicone polymers, acrylics, waxes, thermoplastic polymers, low molecular weight fluids, and epoxy molding compounds.
  • 23. The polymer blend according to claim 20, wherein the polymer blend comprises from about 30 wt. % to about 80 wt. % spherical boron nitride powder.
  • 24. The polymer blend according to claim 20, wherein the polymer blend has a thermal conductivity of from about 1 W/mK to about 15 W/mK.
  • 25. The polymer blend according to claim 20, wherein the spherical agglomerates of hexagonal boron nitride platelets have an average agglomerate diameter of from about 10 microns to about 500 microns.
  • 26. The polymer blend according to claim 25, wherein the majority of spherical agglomerates have an average diameter of from about 30 microns to about 150 microns.
  • 27. A system comprising: a heat source;a heat sink; anda thermally conductive material connecting the heat source to the heat sink, wherein the thermally conductive material comprises a powder phase comprising spherical agglomerates of hexagonal boron nitride platelets.
  • 28. The system according to claim 27, wherein the powder phase has a tap density of about 0.4 g/cc to about 0.7 g/cc.
  • 29. The system according to claim 27, wherein the heat source is an integrated circuit chip, power module or transformer.
  • 30. The system according to claim 27, wherein the heat sink is finned aluminum, copper, berilium or diamond.
  • 31. The system according to claim 27, wherein the thermally conductive material comprises from about 30 wt. % to about 80 wt. % spherical boron nitride powder.
  • 32. The system according to claim 27, wherein the thermally conductive material has a thermal conductivity of from about 1 W/mK to about 15 W/mK.
  • 33. The system according to claim 27, wherein the spherical agglomerates of hexagonal boron nitride platelets have an average agglomerate diameter of from about 10 microns to about 500 microns.
  • 34. The system according to claim 33, wherein the majority of spherical agglomerates have an average diameter of from about 30 microns to about 150 microns.
  • 35. The system according to claim 27, wherein the thermally conductive material is a polymer.
  • 36. The system according to claim 35, wherein the polymer is selected from the group consisting of melt-processable polymers, polyesters, phenolics, silicone polymers, acrylics, waxes, thermoplastic polymers, low molecular weight fluids, and epoxy molding compounds.
  • 37. A spherical boron nitride powder comprising spherical agglomerates of hexagonal boron nitride platelets having an average agglomerate diameter of from 20 microns to 74 microns.
  • 38. The spherical boron nitride powder according to claim 37, wherein the boron nitride agglomerates have an average diameter of from 38 microns to 74 microns.
  • 39. The spherical boron nitride powder according to claim 38, wherein the boron nitride agglomerates have an average diameter of from 38 microns to 53 microns.
  • 40. The spherical boron nitride powder according to claim 37, wherein the spherical boron nitride powder has a tap density of about 0.4 g/cc to about 0.7 g/cc.
  • 41. A spherical boron nitride powder comprising spherical agglomerates of hexagonal boron nitride platelets having an average agglomerate diameter of from 10 microns to 38 microns.
  • 42. The spherical boron nitride powder according to claim 41, wherein the boron nitride agglomerates have an average diameter of from 20 microns to 38 microns.
  • 43. The spherical boron nitride powder according to claim 41, wherein the spherical boron nitride powder has a tap density of about 0.4 g/cc to about 0.7 g/cc.
  • 44. A spherical boron nitride powder comprising spherical agglomerates of hexagonal boron nitride platelets, wherein the powder has an agglomerate size distribution, based on diameter of the agglomerates, of: (i) 10 microns to 38 microns, or(ii) 20 microns to 38 microns, or(iii) 20 microns to 74 microns, or(iv) 38 microns to 74 microns, or(v) 38 microns to 53 microns.
Parent Case Info

More than one reissue application has been filed for the reissue of U.S. Pat. No. 6,645,612, which issued from U.S. patent application Ser. No. 09/923,994, filed Aug. 7, 2001. This application is a continuation reissue application of U.S. Reissue application Ser. No. 11/266,751, filed Nov. 3, 2005, which is an application for reissue of U.S. Pat. No. 6,645,612, now RE45,923. U.S. Reissue application Ser. No. 12/542,424, filed Aug. 17, 2009, now Reissue Pat. No. RE45,803, is also an application for reissue of U.S. Pat. No. 6,645,612.

US Referenced Citations (140)
Number Name Date Kind
2991508 Reuben et al. Jul 1961 A
3125547 Blatz et al. Mar 1964 A
3351690 Stover Nov 1967 A
3617358 Dittrich Nov 1971 A
3720740 Muta et al. Mar 1973 A
3954483 Prochazka May 1976 A
4097293 Komeya et al. Jun 1978 A
4107276 Schwetz et al. Aug 1978 A
4188194 Corrigan Feb 1980 A
4195002 Radtke et al. Mar 1980 A
4394170 Sawaoka et al. Jul 1983 A
4412008 Miyamoto et al. Oct 1983 A
4514370 Inoue et al. Apr 1985 A
4634640 Hunold et al. Jan 1987 A
4642298 Kuramoto et al. Feb 1987 A
4731311 Suzuki et al. Mar 1988 A
4784978 Ogasawara et al. Nov 1988 A
4801445 Fukui et al. Jan 1989 A
4863881 Ahrens et al. Sep 1989 A
4869954 Squitieri Sep 1989 A
4882225 Fukui et al. Nov 1989 A
4927587 Takahashi et al. May 1990 A
4971779 Paine, Jr. et al. Nov 1990 A
4997633 Koshida et al. Mar 1991 A
5001091 Pujari et al. Mar 1991 A
5011870 Peterson Apr 1991 A
5039435 Hanano Aug 1991 A
5063184 Hagio et al. Nov 1991 A
5064589 Ichikawa et al. Nov 1991 A
5098609 Iruvanti et al. Mar 1992 A
5116589 Hoenig May 1992 A
5120688 Hsieh Jun 1992 A
5194480 Block et al. Mar 1993 A
5213868 Liberty et al. May 1993 A
5229339 Pujari et al. Jul 1993 A
5234712 Howard Aug 1993 A
5273558 Nelson et al. Dec 1993 A
5283542 Ochiai et al. Feb 1994 A
5285108 Hastings et al. Feb 1994 A
5298791 Liberty et al. Mar 1994 A
5308044 Nakashima et al. May 1994 A
5312571 Pujari et al. May 1994 A
5320989 Chapman et al. Jun 1994 A
5332629 Sumiya et al. Jul 1994 A
5374036 Rogers et al. Dec 1994 A
5409868 Dasgupta et al. Apr 1995 A
5457075 Fukushima et al. Oct 1995 A
5466269 Corrigan et al. Nov 1995 A
5466400 Pujari et al. Nov 1995 A
5508110 Howard Apr 1996 A
5510174 Litman Apr 1996 A
5525557 Pujari et al. Jun 1996 A
5528462 Pendse Jun 1996 A
5536485 Kume et al. Jul 1996 A
5545473 Ameen et al. Aug 1996 A
5567353 Bogan, Jr. Oct 1996 A
5571760 Pujari et al. Nov 1996 A
5591034 Ameen et al. Jan 1997 A
5593773 McKay et al. Jan 1997 A
5601874 Howard et al. Feb 1997 A
5610203 Buckmaster et al. Mar 1997 A
5614319 Wessels et al. Mar 1997 A
5660917 Fujimori et al. Aug 1997 A
5681883 Hill et al. Oct 1997 A
5688449 Fox Nov 1997 A
5688457 Buckmaster et al. Nov 1997 A
5696041 Collins et al. Dec 1997 A
5716665 Vita et al. Feb 1998 A
5726502 Beddingfield Mar 1998 A
5738936 Hanrahan Apr 1998 A
5759481 Pujari et al. Jun 1998 A
5770819 Mehan Jun 1998 A
5781412 de Sorgo Jul 1998 A
5783308 Leendersen Jul 1998 A
5849316 Mellul et al. Dec 1998 A
5854155 Kawasaki et al. Dec 1998 A
5898009 Shaffer et al. Apr 1999 A
5898217 Johnston Apr 1999 A
5907474 Dolbear May 1999 A
5908796 Pujari et al. Jun 1999 A
5926371 Dolbear Jul 1999 A
5945217 Hanrahan Aug 1999 A
5945478 Buckmaster et al. Aug 1999 A
5950066 Hanson et al. Sep 1999 A
5962122 Walpita et al. Oct 1999 A
5981641 Takahashi et al. Nov 1999 A
5984055 Strasser et al. Nov 1999 A
5985228 Corrigan et al. Nov 1999 A
6048511 Shaffer et al. Apr 2000 A
6054520 Washio et al. Apr 2000 A
6096671 Kawasaki et al. Aug 2000 A
6110527 Brun et al. Aug 2000 A
6124579 Steinhauser et al. Sep 2000 A
6158894 Pujari et al. Dec 2000 A
6162849 Zhuo et al. Dec 2000 A
6168859 Mills et al. Jan 2001 B1
6249703 Stanton et al. Jun 2001 B1
6251513 Rector et al. Jun 2001 B1
6255376 Shikata et al. Jul 2001 B1
6284817 Cross et al. Sep 2001 B1
6287489 Rolander et al. Sep 2001 B1
6300607 Steinhauser et al. Oct 2001 B1
6319602 Fauzi et al. Nov 2001 B1
6348179 Paine Feb 2002 B1
6541111 Fauzi et al. Apr 2003 B2
6548152 Nakatani et al. Apr 2003 B2
6585039 Sagal et al. Jul 2003 B2
6645612 Pujari et al. Nov 2003 B2
6652822 Phillips et al. Nov 2003 B2
6660241 Clere et al. Dec 2003 B2
6676893 Rolander et al. Jan 2004 B2
6713088 Lodyga et al. Mar 2004 B2
6764975 Clere Jul 2004 B1
6794435 Clere Sep 2004 B2
6824753 Paine et al. Nov 2004 B2
6867445 Jang Mar 2005 B2
6951583 Clere et al. Oct 2005 B2
7189774 Clere Mar 2007 B2
7494635 Pruss et al. Feb 2009 B2
7557054 Oda et al. Jul 2009 B2
7914886 Pruss et al. Mar 2011 B2
8169767 Pruss et al. May 2012 B2
20010004131 Masayuki et al. Jan 2001 A
20010021740 Lodyga Sep 2001 A1
20010048179 Stewart et al. Dec 2001 A1
20020004111 Matsubara et al. Jan 2002 A1
20020006373 Clere Jan 2002 A1
20020006511 Clere Jan 2002 A1
20020155052 Paine et al. Oct 2002 A1
20030038278 Ishihara Feb 2003 A1
20040041257 Tobita et al. Mar 2004 A1
20040077764 Lodyga et al. Apr 2004 A1
20040208812 Clere Oct 2004 A1
20050041373 Pruss et al. Feb 2005 A1
20060121068 Sane et al. Jun 2006 A1
20060127422 Lodyga et al. Jun 2006 A1
20060228542 Czubarow Oct 2006 A1
20070041918 Meneghetti et al. Feb 2007 A1
20070205706 Yamada et al. Sep 2007 A1
20080076856 Zhong et al. Mar 2008 A1
Foreign Referenced Citations (116)
Number Date Country
9067727 Jun 1991 AU
9006359 Sep 1991 BR
2031834 Jun 1991 CA
2389963 Jun 2001 CA
1269273 Nov 2000 CN
1834167 Sep 2006 CN
2629960 Jan 1978 DE
3917726 Jul 1990 DE
4013025 Oct 1990 DE
0279769 Aug 1988 EP
0396448 Nov 1990 EP
0432007 Dec 1991 EP
0717020 Jun 1996 EP
0896031 Feb 1999 EP
0939066 Sep 1999 EP
0479387 Oct 1999 EP
0982391 Mar 2000 EP
1 053 973 Nov 2000 EP
1053973 Nov 2000 EP
0939661 Aug 2002 EP
1702907 Sep 2006 EP
906048 Jun 1992 FI
2655638 Jun 1991 FR
870084 Jun 1961 GB
1179156 Jan 1970 GB
1241206 Aug 1971 GB
2301818 Dec 1996 GB
58060679 Apr 1983 JP
58060680 Apr 1983 JP
61132564 Jun 1986 JP
61268763 Nov 1986 JP
62123070 Jun 1987 JP
63006093 Jan 1988 JP
63040769 Feb 1988 JP
63045104 Feb 1988 JP
63045178 Feb 1988 JP
63045178 Feb 1988 JP
63117966 May 1988 JP
63117966 May 1988 JP
64-38424 Feb 1989 JP
1065073 Mar 1989 JP
1119564 May 1989 JP
1122971 May 1989 JP
1126661 May 1989 JP
1131062 May 1989 JP
1131065 May 1989 JP
1131066 May 1989 JP
1133982 May 1989 JP
1239066 Sep 1989 JP
1275471 Nov 1989 JP
89054379 Nov 1989 JP
89154379 Nov 1989 JP
2044067 Feb 1990 JP
2055766 Feb 1990 JP
2092868 Apr 1990 JP
2164433 Jun 1990 JP
3012316 Jan 1991 JP
3177361 Aug 1991 JP
3215364 Sep 1991 JP
4065366 Mar 1992 JP
4164805 Jun 1992 JP
4321506 Nov 1992 JP
04321506 Nov 1992 JP
5000853 Jan 1993 JP
5000854 Jan 1993 JP
5078106 Mar 1993 JP
5148038 Jun 1993 JP
06219714 Aug 1994 JP
06-321638 Nov 1994 JP
7041311 Feb 1995 JP
7157369 Jun 1995 JP
07157369 Jun 1995 JP
07204492 Aug 1995 JP
7315937 Dec 1995 JP
08-127793 May 1996 JP
08183906 Jul 1996 JP
2590908 Mar 1997 JP
2590964 Mar 1997 JP
09151324 Jun 1997 JP
9151324 Jun 1997 JP
9202663 Aug 1997 JP
11-134944 Oct 1997 JP
10194711 Jul 1998 JP
10204300 Aug 1998 JP
11005907 Jan 1999 JP
11005907 Jan 1999 JP
11-060215 Mar 1999 JP
11060215 Mar 1999 JP
11-116213 Apr 1999 JP
11-134944 May 1999 JP
11-209618 Aug 1999 JP
11-277515 Oct 1999 JP
2981002 Nov 1999 JP
2000-34107 Feb 2000 JP
2000508259 Jul 2000 JP
2000279796 Oct 2000 JP
2001010867 Jan 2001 JP
2001-172604 Jun 2001 JP
2001172604 Jun 2001 JP
2002-080617 Mar 2002 JP
2002-097372 Apr 2002 JP
3290127 Jun 2002 JP
2002-198619 Jul 2002 JP
2003518185 Jun 2003 JP
2005036016 Feb 2005 JP
905289 Jun 1991 NO
96113 Sep 1991 PT
514796 May 1976 SU
WO 9737828 Oct 1997 WO
WO 0146313 Jun 2001 WO
WO 0183371 Nov 2001 WO
WO 02088234 Nov 2002 WO
WO 03013845 Feb 2003 WO
WO 2005021428 Mar 2005 WO
WO 2006023860 Mar 2006 WO
WO 2006117117 Nov 2006 WO
Non-Patent Literature Citations (89)
Entry
“AlSiC Microwave Packages,” Microwave Journal pp. 39(6):90,92,94 (1996).
Bathe et al., “BN Protective Coating for High Temperature Applications,” Mat. Res. Soc., Symp. Proc. 697:61-6 (2002).
Combat Boron Nitride Powders Specifications, Carborundum, p. 1 of 2 (1990).
“Boron,” Ceramic Inudstry Materials Handbook, pp. 62,64 (1997).
Engler et al., “Hexagonal Baron Nitride (hBN)—Applications from Metallurgy to Cosmetics,” Ceramic Forum International 84(12):E49-E53 (2007).
Georgeoni et al., “Sintered Materials Based on the Hexagonal and Cubic Boron Nitride,” Powder Metallurgy pp. 247-249 (1994).
Hagio et al, “Sintered BN Products Obtained from a Ground BN Powder and Its Sintering Process,” Journal of the Ceramic Society of Japan 162(10):940-3 (1994).
Hagio & Yoshida, “Sintering and Crystallization of Ground Hexagonal Boron Nitride Powders,” Journal of Materials Science Letters 13:653-5 (1994).
Itoh et al., “Effects of Added c-BN Seed Crystals on the Reaction Sintering of c-BN Accompanied by a Conversion from h-BN to c-BN,” Journal of Materials Science 25:203-6 (1990).
Hubá{hacek over (c)}ek & Ueki, “Pressureless-Sintered Boron Nitride with Limited Content of Boric Oxide,” Materials Science Research International 1(4):209-12 (1995).
Kabyshev et al., “Physical Properties of Polycrystalline Cubic Boron Nitride,” Inorganic Materials 32(2):146-50 (1996).
Morgiel & Benko, “Microstructure of Boron Nitride Sintered with Titanium,” Materials Letters 25:49-52 (1995).
Ohsawa et al., “Sintering of hBN Using Polysilazane,” Journal of the Ceramic Society of Japan 102:646-9 (1994).
Olszyna, “Deposition of BN Coatings by Spraying a Powder Accelerated Electrodynamically in a Coaxial Pulse Plasma Generator,” Thin Solid Films 277:79-82 (1996).
Phone Call Report (Oct. 20, 1998), shipment information (Oct. 23, 1998) for XP-1115 and Experimental Product Analysis (Oct. 23, 1998).
Quotation (Jun. 5, 1998) and Request for Quotation Form (May 15, 1998) with Phone Call Report (May 15, 1998), Experimental Product Analysis for XP1101 (May 8, 1998), and Experimental Product Analysis for XP1101 (May 26, 1998).
Quotation (May 19, 1999) and Experimental Product Analysis for XP1104 (May 18, 1999).
Quotation (Dec. 2, 1999), Request for Quotation Form for Item 1, Item 2, and Item 3 (Nov. 30, 1999), Experimental Product Analysis for XP1101 (Oct. 18, 1999) and Experimental Product Analysis for XP 1123 (Nov. 12, 1999).
Office Action for U.S. Appl. No. 12/542,424 dated Jul. 22, 2014.
Extended European Search Report for European Patent Application Serial No. 1217511.9 dated (Dec. 3, 2013).
Examiner's Answer for U.S. Appl. No. 12/542,424 dated (Sep. 20, 2013).
Notice of Reasons for Rejection (Translation), Japanese Patent Application No. 2008-286337 dated (Dec. 20, 2011).
Communication for European Patent Application No. 02756606.6 dated (Dec. 2, 2013).
Japanese Publication No. JP 2001-274300 (abstract).
Notification (translation) and Information Statement Japanese Patent Application No. 2009-282105, 9 pages (Jan. 17, 2012).
MatSE 411, Processing of Ceramics, Penn State Undergraduate Course Notes, Glossary, Unit 1, p. 73 (2010).
GE Advanced Ceramics, “PolarTherm Thermally Conductive Boron Nitride Fillers for Polymeric Materials,” Brochure, 2 pages, Pub. No. 81501 (Sep. 2003).
GE Advanced Ceramics Worldwide, PolarTherm Thermally Conductive Fillers, http://www.advceramics.com/geac/products/polartherm_fillers/, 4 pages (accessed Sep. 5, 2006).
GE Advanced Materials, PolarTherm XLR Boron Nitride Filler PTX60, 1 page, Pub. 82530U Rev. 3 (Feb. 2005).
GE Advanced Materials, PolarTherm XLR Boron Nitride Filler PTX25, 1 page, Pub. 82530V Rev. 3 (Mar. 2005).
Partial European Search Report, European Patent Application No. 12175111.9, 5 pages dated (Sep. 17, 2012).
Final Office Action, U.S. Appl. No. 12/542,424, USPTO, Alexandria, VA, USA, 13 pages dated (Nov. 1, 2012).
Notice of Reasons for Rejection (Translation), Japanese Patent Application No. 2009-282105, 5 pages dated (Sep. 19, 2012).
Notice of Reasons for Rejection (Translation), Japanese Patent Application No. 2008-286337, 5 pages dated (Jul. 17, 2012).
Translation of First Office Action, Chinese Patent Application No. 02815595.5, 8 pages dated (Jun. 3, 2005).
Translation of Second Office Action, Chinese Patent Application No. 02815595.5, 5 pages dated (Jan. 20, 2006).
Translation of Third Office Action, Chinese Patent Application No. 02815595.5, 5 pages dated (May 26, 2006).
Translation of First Office Action, Chinese Patent Application No. 200710004476.2, 8 pages dated (Aug. 22, 2008).
Translation of Second Office Action, Chinese Patent Application No. 200710004476.2, 8 pages dated (Jun. 28, 2011).
Notice of Requisition, Canadian Patent Application No. 2,455,794, 4 pages dated (Jan. 12, 2007).
Notice of Requisition, Canadian Patent Application No. 2,455,794, 3 pages dated (Nov. 13, 2007).
Notice of Requisition, Canadian Patent Application No. 2,455,794, 1 page dated (Jul. 13, 2009).
Notice of Reasons for Rejection (Translation), Japanese Patent Application No. 2003-518818, 11 pages dated (Sep. 4, 2007).
Notice of Reasons for Rejection (Translation), Japanese Patent Application No. 2003-518818, 12 pages dated (May 7, 2008).
Notice of Reasons for Rejection (Translation), Japanese Patent Application No. 2003-518818 6 pages dated (Jan. 6, 2009).
Decision of Final Rejection (Translation), Japanese Patent Application No. 2003-518818, 6 pages (Aug. 11, 2009).
Communication Pursuant to Article 94(3) EPC, European Patent Application No. 02756606.6, 4 pages (Jul. 5, 2010).
Communication Pursuant to Article 94(3) Epc, European Patent Application No. 02756606.6, 6 pages (Dec. 7, 2010).
Final Office Action, U.S. Appl. No. 12/542,424, 16 pages dated (Feb. 2, 2011).
Non-Final Office Action, U.S. Appl. No. 12/542,424, 16 pages dated (Mar. 22, 2010).
Non-Final Office Action, U.S. Appl. No. 12/542,424, 24 pages dated (Jan. 25, 2012).
Japanese Unexamined Patent Application Publication No. JP 2001-122615 (May 8, 2001).
Japanese Unexamined Patent Application Publication No. JP 11-269302 (Oct. 5, 1999).
Japanese Unexamined Patent Application Publication No. JP 2000-63180 (Feb. 29, 2000).
GE Advanced Ceramics, “PolarTherm Thermally Conductive Boron Nitride Fillers for Polymeric Materials,” Brochure (1997).
Alkoy et al., “Crystallization Behavior and Characterization of Turbrostratic Boron Nitride,” J. of European Ceramic Society 17(12): 1415-1422 (1997).
Hubacek et al., “Hypothetical Model of Turbostratic Layered Boron Nitride,” J. Ceramic Soc. Japan 104(8):695-698 (1996).
Hagio et al., “Microstructural Development With Crystallization of Hexagonal Boron Nitride,” J. Mat. Sci. Lett. 16:795-798 (1997).
Japanese Unexamined Patent Application Publication No. 2006-257392 (Sep. 28, 2006).
Japanese Unexamined Patent Application Publication No. 2007-182369 (Jul. 19, 2007).
Japanese Unexamined Patent Application Publication No. 2008-510878 (Apr. 10, 2008).
Messing et al., “Calcination and Phase Transformation,” pp. 887-893, Edited by Buschow et al. (2001) Encyclopedia of Materials—Science and Technology, vols. 1-11 (Knovel release date Sep. 12, 2008) Elsevier, Online version @ http://www.knovel.com/.
Dean et al., “Novel Thermal Interface Material with Aligned Conductive Fibers,” Johnson Matthey Electronics, Spokae, WA, International Symposium on Microelectronics, SPIE Proceedings Series 3906:462-467 (1999).
International Preliminary Examination Report for International Patent Application No. PCT/US01/14041 dated (Nov. 16, 2002).
International Search Report for International Patent Application No. PCT/US01/14041 dated (Dec. 7, 2001).
International Search Report for International Patent Application No. PCT/US02/23396 dated (Dec. 13, 2002).
International Search Report for International Patent Application No. PCT/US2004/026765 dated (Dec. 3, 2004).
Miyazaki et al., “Microstructure of Pressureless Sintered h-BN,” Journal of the Ceramic Society of Japan, Int. Edition 99:566-9 (1991).
Rosenbaum et al., “A New Processing Additive Eliminating Surface and Gross Melt Fracture in the Extrusion of Polyolefins and Fluoropolymers,” ANTEC (1998).
Rosenbaum et al., “Boron Nitride as a Processing Aid for the Extrusion of Polyolefins and Fluoropolymers,” Rapra Abstracts, Pergamon Press Ltd:Oxford, GB p. 168 (2000).
Seth et al., “The Effect of Surface Energy of Boron Nitride Powders on Gross Melt Fracture Elimination,” ANTEC (2001).
Supplementary European Search Report for European Patent Application No. EP02756606 dated (Sep. 17, 2009).
Supplementary Partial European Search Report for European Patent Application No. EP02756606 dated (Jun. 29, 2006).
Written Opinion for International Patent Application No. PCT/US02/23396 dated (Jun. 3, 2003).
Written Opinion for International Patent Application No. PCT/US2004/026765 dated (Dec. 3, 2004).
Yip et al., “Effect of Combining Boron Nitride with Fluoroelastomer on the Melt Fracture of HDPE in Extrusion Blow Molding,” J. Vinyl & Additive Tech. 6(4):196-204 (2000).
Yip et al., “The Effect of the Boron Nitride Type and Concentration of the Rheology and Processability of Molten Polymers,” ANTEC 1999, Tech. Papers 45 New York (1999).
Tres BN Boron Nitride Powder, 2 pages, Carborundum Corporation, Amherst, NY (May 1998).
Manual of Patent Examining Procedure Original Eighth Edition, Aug. 2001 Latest Revision Jul. 2008, U.S. Department of Commerce United States Patent and Trademark Office, Washington, DC 20402, MPEP § 1453, pp. 1-7.
Masters, K, “Spray Drying Hand Book” 1985, Longman Scientific & Technical New York, XP002386938, p. 171, first paragraph.
Carborundum Boron Nitride Data Sheet, “Cosmetic Grade Boron Nitride Powders” (Jun. 1998).
Hagio et al., “Sintering of the Mechanochemically Activated Powders of Hexagonal Boron Nitride,” J. Am. Ceram. Soc. 72(8):1482-84 (1989).
Jiminez et al., “Core-level Photoabsorption Study of Defects and Metastable Bonding Configurations in Boron Nitride,” The American Physical Society, 1997, pp. 12025-12037, vol. 55, No. 18.
Rosenbaum et al., “Boron Nitride as a Processing Aid for the Extrusion of Polyoefins and Fluoropolymers,” Polymer Engineering & Science, Jan. 2000, vol. 40, No. 1, pp. 179-190.
Rudin, “Fluorocarbon Elastomer Aids Polyolefin Extrustion,” Plastics Engineering, Mar. 1, 1986, pp. 63-66, Society of Plastics Engineers, Inc. Greenwich, CT, US.
“Silicones & Silicon-Containing Polymers,” Petrarch Systems Silanes and Silicones: Silicone Compounds Register & Review (1987).
Trice et al., “Investigation of the Physical and Mechanical Properties of Hot-Pressed Boron Nitride/Oxide Ceramic Composites,” J. Am. Ceram. Soc., 1999, pp. 2563-2565, vol. 82, No. 9.
Phone Call Report (Oct. 20, 1998) shipment information for XP 1115 and Experimental Product Analysis (Oct. 20, 1998).
Quotation (Dec. 2, 1999) Request for Quotation Form for Item 1, Item 2, and Item 3 (Dec. 2, 1999).
Continuations (1)
Number Date Country
Parent 11266751 Nov 2005 US
Child 09923994 US
Reissues (1)
Number Date Country
Parent 09923994 Aug 2001 US
Child 15051318 US