Claims
- 1. An element of an integrated circuit comprising a semiconductor body having emitter, base and collector regions of a transistor with collector-base and base-emitter P-N junctions and a majority carrier junction formed on one surface of said body, said one surface further having an insulating layer thereon; said collector region comprising first and second spacedapart surface portions, said first surface portion being disposed laterally to one side of said base region at said one surface of said body and said second surface portion being continuous with said first portion in said body and disposed laterally to the opposite side of said base region at said one surface of said body, said base region separating said collector region into said first surface portion and said second surface portion at said one surface of said body, said base region being surrounded by said collector region in said body; said majority carrier junction being formed through an opening in said insulating layer by an electrode on said first surface portion of said collector region, an electrode ohmically contacting said base region through an opening in said insulating layer, a collector electrode being formed on said second surface portion of said collector region, an electrical conductor means providing electrical connections to said majority junction, base, collector and emitter electrodes and further effecting a continuous connection of said majority carrier junction electrode and said base electrode, whereby load current capability is improved without increasing storage time of said transistor.
- 2. An element according to claim 1, wherein said emitter, base, and collector regions are substantially annular in configuration, and wherein said first surface portion of said collector region is surrounded by said base region at said one surface of said body and said second surface portion is disposed laterally to the outside of said base region at said one surface of said body.
- 3. An element according to claim 1, wherein said electrical conductor means are disposed on said insulating layer.
- 4. An element as defined in claim 2, wherein said electrical conductor means are disposed in said insulating layer.
- 5. An element according to claim 4, wherein said transistor has a plurality of emitter regions in said base region and a plurality of majority carrier junctions; each said majority carrier junction being formed on a corresponding first portion of said collection region which is surrounded by the base region on the surface of the element, said majority carrier junction being located between separate emitter regions.
- 6. An integrated circuit containing at least one element according to claim 1.
Priority Claims (2)
Number |
Date |
Country |
Kind |
43-18984 |
Mar 1968 |
JA |
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43-12973 |
Apr 1968 |
JA |
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Parent Case Info
This is a continuation of application Ser. No. 125,789 filed Mar. 18, 1971, now abandoned, which in turn is a Continuation-in-part of application Ser. No. 809,654 filed Mar. 24, 1969, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3463975 |
Biard |
Aug 1969 |
|
3909837 |
Kronlage |
Sep 1975 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
125789 |
Mar 1971 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
809654 |
Mar 1969 |
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