The present application is related generally to high strength microstructures, such as for example x-ray window support structures.
Carbon fiber composite (CFC) wafers can be used in applications where high strength is desired. Barriers to the development of carbon fiber based structures, especially structures with micrometer-sized features, include difficulties in machining or patterning, and high surface roughness of cured composites. A root mean square surface roughness Rq of typical CFC wafers can be greater than 1 micrometer. Root mean square surface roughness Rq can be defined by the following equation: Rq=√{square root over (Σzi2)}. In this equation, z represents a height of the surface at different measured locations i.
It has been recognized that it would be advantageous to have a carbon fiber composite wafer having high strength and low surface roughness.
In one embodiment, the present invention is directed to a carbon fiber composite (CFC) wafer that satisfies the needs for high strength and low surface roughness. The CFC wafer comprises at least one sheet of CFC including carbon fibers embedded in a matrix. The wafer can have a thickness of between 10-500 micrometers. The wafer can have a root mean square surface roughness Rq, on at least one side, of less than 300 nm in an area of 100 micrometers by 100 micrometers and less than 500 nm along a line of 2 millimeter length. The wafer can have a yield strength at fracture of greater than 0.5 gigapascals, wherein yield strength is defined as the force, in a direction parallel with a plane of the wafer, per unit area, to cause the wafer to fracture. The wafer can have a strain at fracture of more than 0.01, wherein strain is defined as the change in length caused by a force in a direction parallel with a plane of the wafer divided by original length.
In another embodiment, the present invention is directed to a method of making a CFC wafer that satisfies the needs for high strength and low surface roughness. The method comprises pressing a stack of at least one sheet of CFC between pressure plates with a porous breather layer disposed between at least one side of the stack and at least one of the pressure plates; then heating the stack to a temperature of at least 50° C. to cure the stack into a CFC wafer.
In another embodiment, the present invention is directed to an x-ray window including a high strength support structure. The x-ray window can comprise a support frame defining a perimeter and an aperture with a plurality of ribs extending across the aperture of the support frame and carried by the support frame. Openings exist between the plurality of ribs. The support frame and the plurality of ribs comprise a support structure. A film can be disposed over, can be carried by, and can span the plurality of ribs and can be disposed over and can span the openings. The film can be configured to pass x-ray radiation therethrough. The support structure can comprise a carbon fiber composite material (CFC). The CFC material can comprise carbon fibers embedded in a matrix. A thickness of the support structure can be between 10-500 micrometers. A root mean square surface roughness Rq of the support structure on a side facing the film can be less than 500 nm along a line of 2 millimeter length.
Illustrated in
The carbon fibers 12 can be directionally aligned in a single direction A1, directionally aligned in multiple directions, or disposed in random directions in the matrix. Three CFC sheets 21a-c are shown in
CFC wafers per the present invention can have high yield strength. A yield strength at fracture can be greater than 0.1 gigapascals (GPa) in one aspect, greater than 0.5 GPa in another aspect, greater than 2 GPa in another aspect, between 2 GPa and 3.6 GPa in another aspect, or between 0.5 GPa and 6 GPa in another aspect. Yield strength can be defined as a force F in a direction parallel with a plane 33 or 34 of a side 32a or 32b of the wafer, per unit area, to cause the wafer to fracture. If fibers are directionally aligned, the force F can be aligned parallel with the fibers.
CFC wafers per the present invention can have high strain. A strain at fracture can be greater than 0.01 in one aspect, greater than 0.03 in another aspect, greater than 0.05 in another aspect, or between 0.01 and 0.080 in another aspect. Strain can be defined as the change in length L caused by a force F in a direction parallel with a plane 33 or 34 of the wafer divided by original length L. If fibers are directionally aligned, the force F can be aligned parallel with the fibers.
The wafer can have two faces or sides 32a-b and an edge 31. The sides 32a-b can have a substantially larger surface area than the edge 31. The sides 32a-b can be substantially parallel with each other. One side 32a can be disposed along, or parallel with, a single plane 33; and the other side 32b can be disposed along, or parallel with, a different single plane 34.
At least one side 32a and/or 32b of the wafer can be smooth, i.e. can have a low surface roughness. A low surface roughness can be beneficial for improving adhesion to other materials, such as to an x-ray window film for example. One measurement of surface roughness is root mean square surface roughness Rq calculated by the equation Rq=√{square root over (Σzi2)}. The measurement zi can be made along a surface of the wafer by an atomic force microscope. The measurement of zi on a portion of the wafer 40 is shown in
Shown in
As shown on wafer 60 in
Also shown on wafer 60 in
A solid, polished layer 73 can be disposed between the second surface 32b of the stack 71 and the second pressure plate 76b during the first curing process. The polished layer 73 can help create a very smooth surface on the second surface 32b of the stack 71. The polished layer 73 can be a highly polished sheet of stainless steel, a silicon wafer, or a glass plate. A fluorine release layer can be used to avoid the stack sticking 71 to the polished layer 73. For example, a fluorinated alkane monolayer can be deposited on silicon wafers to facilitate release by placing in a vacuum desiccator overnight with 5 mL of Trichloro(1H,1H,2H,2H-perfluorooctyl)silane in a glass vial. The polished layer 73 can have a root mean square surface roughness Rq of less than 300 nm in an area of 100 micrometers by 100 micrometers, on a side facing the stack. Thus, it is not necessary for the polished layer 73 to have a polished surface on both sides.
A polyimide sheet 61 can be cured together with and can abut the CFC sheet(s) 21. The polyimide sheet 61 can be disposed between the second surface 32b of the stack 71 and the second pressure plate 76b. The polyimide sheet 61 can be disposed between the second surface 32b of the stack 71 and the polished layer 73 (if a polished layer is used). Alternatively, a polyimide sheet 61 can be disposed on both surfaces 32a and 32b of the stack 71. The polyimide sheet(s) 61 can be useful for improving the surface of the final wafer and/or for improving adhesion of the stack 71 to other materials.
The porous layer 72 can allow gas, emitted by the stack, to escape from the press. A multi-layer porous breather layer 72 can be used. For example, the porous breather layer 72 can comprise a porous polymer layer 72b facing the stack 71 and a nylon mesh 72a facing the first pressure plate 76a. A vacuum can aid in removal of the gas. A vacuum pump 75 can be attached by tubing 74 to the press and can draw a vacuum, such as less than 50 torr, between the pressure plates. The vacuum can be maintained through substantially all of the curing process, or through only part of the curing process, such as at least 50% of the curing process.
Shown in
A benefit of use of the second curing process 90 is that the gas can be removed during the first curing process 70, then polished layers 73a and 73b can be disposed on both sides 32a and 32b of the stack 71, with the result that both sides of the wafer can be highly polished. Thus, both sides of the wafer can have a root mean square surface roughness Rq as specified above.
Shown in
Carbon fibers in a carbon fiber composite can be graphitic, and thus can be highly resistant to chemical etching. Alternative methods have been found for etching or cutting micro-sized structures in CFC wafers in the present invention. The support structure 100 may be made by cutting a CFC wafer to form ribs 102 and openings 103. The CFC wafer may be cut by laser milling or laser ablation. A high power laser can use short pulses of laser to ablate the material to form the openings 103 by ultrafast laser ablation. A femtosecond laser may be used. A nanosecond pulsed YAG laser may be used. Ablating wafer material in short pulses of high power laser can be used in order to avoid overheating the CFC material. Alternatively, a non-pulsing laser can be used and the wafer can be cooled by other methods, such as conductive or convective heat removal. The wafer can be cooled by water flow or air across the wafer. The above mentioned cooling methods can also be used with laser pulses, such as a femtosecond laser, if additional cooling is needed.
As shown in
As described above regarding
A surface of the support structure 100 facing the film can have low surface roughness. This surface can be CFC 71 or can be polyimide 61. This surface can have a root mean square surface roughness Rq of less than 300 nm in one aspect, or between 30 nm and 300 nm in another aspect, in an area of 100 micrometers by 100 micrometers. This surface can have a root mean square surface roughness Rq of less than 500 nm in one aspect, or between 50 nm and 500 nm in another aspect, along a line of 2 millimeter length. This surface can have a root mean square surface roughness Rq of less than 200 nanometers in one aspect, or between 20 nm and 200 nm in another aspect, in an area of 100 micrometers by 100 micrometers.
The ribs 102 can have a strain at fracture of greater than 0.01 in one aspect, greater than 0.03 in another aspect, greater than 0.05 in another aspect, or between 0.01 and 0.080 in another aspect. Strain can be defined as a change in length caused by a force in a direction parallel with the ribs divided by original length. If fibers are directionally aligned, the force F can be aligned parallel with the fibers.
The wafers described herein can also be micropatterned by laser ablation and/or water jet to form other structures, such as a flexure mechanical mechanism, a mesoscale mechanical mechanism, a microscale mechanical mechanism, and/or elements in a microelectromechanical system (MEMS).
As shown in
Priority is claimed to U.S. Provisional Patent Application Ser. No. 61/689,392, filed on Jun. 6, 2012; which is hereby incorporated herein by reference in its entirety. This is a continuation-in-part of U.S. patent application Ser. No. 13/453,066, filed on Apr. 23, 2012, which claims priority to U.S. Provisional Patent Application Nos. 61/486,547, filed on May 16, 2011; 61/495,616, filed on Jun. 10, 2011; and 61/511,793, filed on Jul. 26, 2011; all of which are hereby incorporated herein by reference in their entirety.
Number | Name | Date | Kind |
---|---|---|---|
1276706 | Snook et al. | May 1918 | A |
1881448 | Forde et al. | Oct 1932 | A |
1946288 | Kearsley | Feb 1934 | A |
2291948 | Cassen | Aug 1942 | A |
2316214 | Atlee et al. | Apr 1943 | A |
2329318 | Atlee et al. | Sep 1943 | A |
2340363 | Atlee et al. | Feb 1944 | A |
2502070 | Atlee et al. | Mar 1950 | A |
2663812 | Jamison et al. | Mar 1950 | A |
2683223 | Hosemann | Jul 1954 | A |
2952790 | Steen | Sep 1960 | A |
3397337 | Denholm | Aug 1968 | A |
3538368 | Oess | Nov 1970 | A |
3665236 | Gaines et al. | May 1972 | A |
3679927 | Kirkendall | Jul 1972 | A |
3691417 | Gralenski | Sep 1972 | A |
3741797 | Chavasse, Jr. et al. | Jun 1973 | A |
3751701 | Gralenski et al. | Aug 1973 | A |
3801847 | Dietz | Apr 1974 | A |
3828190 | Dahlin et al. | Aug 1974 | A |
3873824 | Bean et al. | Mar 1975 | A |
3882339 | Rate et al. | May 1975 | A |
3962583 | Holland et al. | Jun 1976 | A |
3970884 | Golden | Jul 1976 | A |
4007375 | Albert | Feb 1977 | A |
4075526 | Grubis | Feb 1978 | A |
4126788 | Koontz et al. | Nov 1978 | A |
4160311 | Ronde et al. | Jul 1979 | A |
4163900 | Warren et al. | Aug 1979 | A |
4178509 | More et al. | Dec 1979 | A |
4184097 | Auge | Jan 1980 | A |
4250127 | Warren et al. | Feb 1981 | A |
4368538 | McCorkle | Jan 1983 | A |
4393127 | Greschner et al. | Jul 1983 | A |
4443293 | Mallon et al. | Apr 1984 | A |
4463257 | Simpkins et al. | Jul 1984 | A |
4463338 | Utner et al. | Jul 1984 | A |
4521902 | Peugeot | Jun 1985 | A |
4532150 | Endo et al. | Jul 1985 | A |
4573186 | Reinhold | Feb 1986 | A |
4576679 | White | Mar 1986 | A |
4584056 | Perret et al. | Apr 1986 | A |
4591756 | Avnery | May 1986 | A |
4608326 | Neukermans et al. | Aug 1986 | A |
4645977 | Kurokawa et al. | Feb 1987 | A |
4675525 | Amingual et al. | Jun 1987 | A |
4679219 | Ozaki | Jul 1987 | A |
4688241 | Peugeot | Aug 1987 | A |
4696994 | Nakajima | Sep 1987 | A |
4705540 | Hayes | Nov 1987 | A |
4777642 | Ono | Oct 1988 | A |
4797907 | Anderton | Jan 1989 | A |
4818806 | Kunimune et al. | Apr 1989 | A |
4819260 | Haberrecker | Apr 1989 | A |
4837068 | Martin et al. | Jun 1989 | A |
4862490 | Karnezos et al. | Aug 1989 | A |
4870671 | Hershyn | Sep 1989 | A |
4876330 | Higashi et al. | Oct 1989 | A |
4878866 | Mori et al. | Nov 1989 | A |
4885055 | Woodbury et al. | Dec 1989 | A |
4891831 | Tanaka et al. | Jan 1990 | A |
4933557 | Perkins | Jun 1990 | A |
4939763 | Pinneo et al. | Jul 1990 | A |
4957773 | Spencer et al. | Sep 1990 | A |
4960486 | Perkins et al. | Oct 1990 | A |
4969173 | Valkonet | Nov 1990 | A |
4979198 | Malcolm et al. | Dec 1990 | A |
4979199 | Cueman et al. | Dec 1990 | A |
5010562 | Hernandez et al. | Apr 1991 | A |
5055421 | Birkle et al. | Oct 1991 | A |
5063324 | Grunwald et al. | Nov 1991 | A |
5066300 | Isaacson et al. | Nov 1991 | A |
5077771 | Skillicorn et al. | Dec 1991 | A |
5077777 | Daly | Dec 1991 | A |
5090046 | Friel | Feb 1992 | A |
5105456 | Rand et al. | Apr 1992 | A |
5117829 | Miller et al. | Jun 1992 | A |
5153900 | Nomikos et al. | Oct 1992 | A |
5161179 | Suzuki et al. | Nov 1992 | A |
5173612 | Imai et al. | Dec 1992 | A |
5196283 | Ikeda et al. | Mar 1993 | A |
5206534 | Birkle et al. | Apr 1993 | A |
5217817 | Verspui et al. | Jun 1993 | A |
5226067 | Allred et al. | Jul 1993 | A |
RE34421 | Parker et al. | Oct 1993 | E |
5258091 | Imai et al. | Nov 1993 | A |
5267294 | Kuroda et al. | Nov 1993 | A |
5343112 | Wegmann | Aug 1994 | A |
5391958 | Kelly | Feb 1995 | A |
5392042 | Pellon | Feb 1995 | A |
5400385 | Blake et al. | Mar 1995 | A |
5422926 | Smith et al. | Jun 1995 | A |
5428658 | Oettinger et al. | Jun 1995 | A |
5432003 | Plano et al. | Jul 1995 | A |
5457041 | Ginaven et al. | Oct 1995 | A |
5465023 | Garner | Nov 1995 | A |
5469429 | Yamazaki et al. | Nov 1995 | A |
5469490 | Golden et al. | Nov 1995 | A |
5478266 | Kelly | Dec 1995 | A |
5524133 | Neale et al. | Jun 1996 | A |
5561342 | Roeder et al. | Oct 1996 | A |
5567929 | Ouimette | Oct 1996 | A |
RE35383 | Miller et al. | Nov 1996 | E |
5571616 | Phillips et al. | Nov 1996 | A |
5578360 | Viitanen | Nov 1996 | A |
5607723 | Plano et al. | Mar 1997 | A |
5616179 | Baldwin et al. | Apr 1997 | A |
5621780 | Smith et al. | Apr 1997 | A |
5627871 | Wang | May 1997 | A |
5631943 | Miles | May 1997 | A |
5680433 | Jensen | Oct 1997 | A |
5682412 | Skillicorn et al. | Oct 1997 | A |
5696808 | Lenz | Dec 1997 | A |
5729583 | Tang et al. | Mar 1998 | A |
5740228 | Schmidt et al. | Apr 1998 | A |
5774522 | Warburton | Jun 1998 | A |
5812632 | Schardt et al. | Sep 1998 | A |
5835561 | Moorman et al. | Nov 1998 | A |
5870051 | Warburton | Feb 1999 | A |
5898754 | Gorzen | Apr 1999 | A |
5907595 | Sommerer | May 1999 | A |
6002202 | Meyer et al. | Dec 1999 | A |
6005918 | Harris et al. | Dec 1999 | A |
6044130 | Inazura et al. | Mar 2000 | A |
6062931 | Chuang et al. | May 2000 | A |
6069278 | Chuang | May 2000 | A |
6075839 | Treseder | Jun 2000 | A |
6097790 | Hasegawa et al. | Aug 2000 | A |
6133401 | Jensen | Oct 2000 | A |
6134300 | Trebes et al. | Oct 2000 | A |
6184333 | Gray | Feb 2001 | B1 |
6205200 | Boyer et al. | Mar 2001 | B1 |
6282263 | Arndt et al. | Aug 2001 | B1 |
6288209 | Jensen | Sep 2001 | B1 |
6307008 | Lee et al. | Oct 2001 | B1 |
6320019 | Lee et al. | Nov 2001 | B1 |
6351520 | Inazaru | Feb 2002 | B1 |
6385294 | Suzuki et al. | May 2002 | B2 |
6438207 | Chidester et al. | Aug 2002 | B1 |
6447880 | Coppens | Sep 2002 | B1 |
6477235 | Chornenky et al. | Nov 2002 | B2 |
6487272 | Kutsuzawa | Nov 2002 | B1 |
6487273 | Takenaka et al. | Nov 2002 | B1 |
6494618 | Moulton | Dec 2002 | B1 |
6546077 | Chornenky et al. | Apr 2003 | B2 |
6567500 | Rother | May 2003 | B2 |
6646366 | Hell et al. | Nov 2003 | B2 |
6658085 | Sklebitz | Dec 2003 | B2 |
6661876 | Turner et al. | Dec 2003 | B2 |
6738484 | Nakabayashi | May 2004 | B2 |
6740874 | Doring | May 2004 | B2 |
6778633 | Loxley et al. | Aug 2004 | B1 |
6799075 | Chornenky et al. | Sep 2004 | B1 |
6803570 | Bryson, III et al. | Oct 2004 | B1 |
6816573 | Hirano et al. | Nov 2004 | B2 |
6819741 | Chidester | Nov 2004 | B2 |
6838297 | Iwasaki | Jan 2005 | B2 |
6852365 | Smart et al. | Feb 2005 | B2 |
6876724 | Zhou | Apr 2005 | B2 |
6956706 | Brandon | Oct 2005 | B2 |
6962782 | Livache et al. | Nov 2005 | B1 |
6976953 | Pelc | Dec 2005 | B1 |
6987835 | Lovoi | Jan 2006 | B2 |
7035379 | Turner et al. | Apr 2006 | B2 |
7046767 | Okada et al. | May 2006 | B2 |
7085354 | Kanagami | Aug 2006 | B2 |
7130380 | Lovoi et al. | Oct 2006 | B2 |
7130381 | Lovoi et al. | Oct 2006 | B2 |
7166910 | Minervini | Jan 2007 | B2 |
7203283 | Puusaari | Apr 2007 | B1 |
7206381 | Shimono et al. | Apr 2007 | B2 |
7215741 | Ukita | May 2007 | B2 |
7224769 | Turner | May 2007 | B2 |
7233647 | Turner et al. | Jun 2007 | B2 |
7286642 | Ishikawa et al. | Oct 2007 | B2 |
7305066 | Ukita | Dec 2007 | B2 |
7358593 | Smith et al. | Apr 2008 | B2 |
7364794 | Ohnishi et al. | Apr 2008 | B2 |
7378157 | Sakakura et al. | May 2008 | B2 |
7382862 | Bard et al. | Jun 2008 | B2 |
7428054 | Yu et al. | Sep 2008 | B2 |
7428298 | Bard et al. | Sep 2008 | B2 |
7448801 | Oettinger et al. | Nov 2008 | B2 |
7448802 | Oettinger et al. | Nov 2008 | B2 |
7486774 | Cain | Feb 2009 | B2 |
7526068 | Dinsmore | Apr 2009 | B2 |
7529345 | Bard et al. | May 2009 | B2 |
7618906 | Meilahti | Nov 2009 | B2 |
7634052 | Grodzins | Dec 2009 | B2 |
7649980 | Aoki et al. | Jan 2010 | B2 |
7657002 | Burke et al. | Feb 2010 | B2 |
7684545 | Damento et al. | Mar 2010 | B2 |
7693265 | Hauttmann et al. | Apr 2010 | B2 |
7709820 | Decker et al. | May 2010 | B2 |
7737424 | Xu et al. | Jun 2010 | B2 |
7756251 | Davis et al. | Jul 2010 | B2 |
7983394 | Kozaczek | Jul 2011 | B2 |
8498381 | Liddiard et al. | Jul 2013 | B2 |
8929515 | Liddiard | Jan 2015 | B2 |
20020075999 | Rother | Jun 2002 | A1 |
20020094064 | Zhou | Jul 2002 | A1 |
20030096104 | Tobita et al. | May 2003 | A1 |
20030117770 | Montgomery et al. | Jun 2003 | A1 |
20030122111 | Glatkowski | Jul 2003 | A1 |
20030152700 | Asmussen et al. | Aug 2003 | A1 |
20040076260 | Charles, Jr. et al. | Apr 2004 | A1 |
20040131835 | Schmitt et al. | Jul 2004 | A1 |
20050018817 | Oettinger et al. | Jan 2005 | A1 |
20050141669 | Shimono et al. | Jun 2005 | A1 |
20050207537 | Ukita | Sep 2005 | A1 |
20060098778 | Oettinger et al. | May 2006 | A1 |
20060233307 | Dinsmore | Oct 2006 | A1 |
20060269048 | Cain | Nov 2006 | A1 |
20070025516 | Bard et al. | Feb 2007 | A1 |
20070087436 | Miyawaki et al. | Apr 2007 | A1 |
20070111617 | Meilahti | May 2007 | A1 |
20070133921 | Haffner et al. | Jun 2007 | A1 |
20070165780 | Durst et al. | Jul 2007 | A1 |
20070183576 | Burke et al. | Aug 2007 | A1 |
20080181365 | Matoba | Jul 2008 | A1 |
20080199399 | Chen et al. | Aug 2008 | A1 |
20080296479 | Anderson et al. | Dec 2008 | A1 |
20080296518 | Xu et al. | Dec 2008 | A1 |
20080317982 | Hecht | Dec 2008 | A1 |
20090086923 | Davis et al. | Apr 2009 | A1 |
20100003186 | Yoshikawa et al. | Jan 2010 | A1 |
20100096595 | Prud'Homme et al. | Apr 2010 | A1 |
20100126660 | O'Hara | May 2010 | A1 |
20100140497 | Damiano, Jr. et al. | Jun 2010 | A1 |
20100239828 | Cornaby et al. | Sep 2010 | A1 |
20100243895 | Xu et al. | Sep 2010 | A1 |
20100248343 | Aten et al. | Sep 2010 | A1 |
20100285271 | Davis et al. | Nov 2010 | A1 |
20100323419 | Aten et al. | Dec 2010 | A1 |
20110017921 | Jiang et al. | Jan 2011 | A1 |
20110031566 | Kim et al. | Feb 2011 | A1 |
20110089330 | Thomas | Apr 2011 | A1 |
20110121179 | Liddiard | May 2011 | A1 |
20120003448 | Weigel et al. | Jan 2012 | A1 |
20120025110 | Davis | Feb 2012 | A1 |
20120087476 | Liddiard | Apr 2012 | A1 |
20120213336 | Liddiard | Aug 2012 | A1 |
20130051535 | Davis | Feb 2013 | A1 |
20130064355 | Davis | Mar 2013 | A1 |
20130077761 | Sipila | Mar 2013 | A1 |
20130089184 | Sipila | Apr 2013 | A1 |
20130094629 | Liddiard | Apr 2013 | A1 |
20130315380 | Davis et al. | Nov 2013 | A1 |
20140140487 | Harker et al. | May 2014 | A1 |
20150016593 | Larson et al. | Jan 2015 | A1 |
Number | Date | Country |
---|---|---|
1030936 | May 1958 | DE |
4430623 | Mar 1996 | DE |
19818057 | Nov 1999 | DE |
0297808 | Jan 1989 | EP |
0330456 | Aug 1989 | EP |
0400655 | May 1990 | EP |
0400655 | Dec 1990 | EP |
0676772 | Mar 1995 | EP |
1252290 | Nov 1971 | GB |
57082954 | Aug 1982 | JP |
S6074253 | Apr 1985 | JP |
S6089054 | May 1985 | JP |
3170673 | Jul 1991 | JP |
05066300 | Mar 1993 | JP |
5135722 | Jun 1993 | JP |
06119893 | Jul 1994 | JP |
6289145 | Oct 1994 | JP |
6343478 | Dec 1994 | JP |
8315783 | Nov 1996 | JP |
2001179844 | Jul 2001 | JP |
2003007237 | Jan 2003 | JP |
2003088383 | Mar 2003 | JP |
2003510236 | Mar 2003 | JP |
20033211396 | Jul 2003 | JP |
4171700 | Jun 2006 | JP |
2006297549 | Nov 2006 | JP |
10-2005-0107094 | Nov 2005 | KR |
WO 9965821 | Dec 1999 | WO |
WO 0009443 | Feb 2000 | WO |
WO 0017102 | Mar 2000 | WO |
WO 03076951 | Sep 2003 | WO |
WO 2008052002 | May 2008 | WO |
WO 2009009610 | Jan 2009 | WO |
WO 2009045915 | Apr 2009 | WO |
WO 2009085351 | Jul 2009 | WO |
WO 2010107600 | Sep 2010 | WO |
Entry |
---|
PCT application EP12167551.6; filed May 10, 2012: Robert C. Davis; European search report mailed Nov. 21, 2013. |
U.S. Appl. No. 11/756,962, filed Jun. 1, 2007; Anderson et al. |
U.S. Appl. No. 12/352,864, filed Jan. 13, 2009; Lines. |
U.S. Appl. No. 12/726,120, filed Mar. 17, 2010; Lines. |
U.S. Appl. No. 12/640,154, filed Dec. 17, 2009; Krzysztof Kozaczek. |
U.S. Appl. No. 12/783,707, filed May 20, 2010; Steven D. Liddiard. |
U.S. Appl. No. 12/899,750, filed Oct. 7, 2010; Steven Liddiard. |
U.S. Appl. No. 13/018,667, filed Feb. 1, 2011; Lei Pei. |
U.S. Appl. No. 13/312,531, filed Dec. 6, 2011; Steven Liddiard. |
U.S. Appl. No. 13/312,531, filed Dec. 6, 2011; Steven Liddiard; office action dated Dec. 20, 2013. |
U.S. Appl. No. 12/899,750, filed Oct. 7, 2010; Steven Liddiard; notice of allowance and fee(s) mailed Jun. 4, 2013. |
Barkan et al., “Improved window for low-energy x-ray transmission a Hybrid design for energy-dispersive microanalysis,” Sep. 1995, 2 pages, Ectroscopy 10(7). |
Blanquart et al.; “XPAD, a New Read-out Pixel Chip for X-ray Counting”; IEEE Xplore; Mar. 25, 2009. |
Comfort, J. H., “Plasma-enhanced chemical vapor deposition of in situ doped epitaxial silicon at low temperatures,” J. Appl. Phys. 65, 1067 (1989). |
Grybos et al.; “DEDIX—Development of Fully Integrated Multichannel ASIC for High Count Rate Digital X-ray Imagining systems”; IEEE 2006; Nuclear Science Symposium Conference Record. |
Grybos, “Pole-Zero Cancellations Circuit With Pulse Pile-Up Tracking System for Low Noise Charge-Sensitive Amplifiers”; Mar. 25, 2009; from IEEE Xplore. |
Grybos, et al “Measurements of Matching and High Count Rate Performance of Multichannel ASIC for Digital X-Ray Imaging Systems”; IEEE Transactions on Nuclear Science, vol. 54, No. 4, 2007. |
Hanigofsky, J. A., K. L. More, and W. J. Lackey, “Composition and microstructure of chemically vapor-deposited boron nitride, aluminum nitride, and boron nitride + aluminum nitride composites,” J. Amer. Ceramic Soc. 74, 301 (1991). |
http://www.orau.org/ptp/collection/xraytubescollidge/MachelettCW250.htm, 1999, 2 pgs. |
Komatsu, S., and Y. Moriyoshi, “Influence of atomic hydrogen on the growth reactions of amorphous boron films in a low-pressure B.sub.2 H.sub.6 +He+H.sub.2 plasma”, J. Appl. Phys. 64, 1878 (1988). |
Komatsu, S., and Y. Moriyoshi, “Transition from amorphous to crystal growth of boron films in plasma-enhanced chemical vapor deposition with B.sub.2 H.sub.6 +He,” J. Appl. Phys., 66, 466 (1989). |
Komatsu, S., and Y. Moriyoshi, “Transition from thermal-to electron-impact decomposition of diborane in plasma-enhanced chemical vapor deposition of boron films from B.sub.2 H.sub.6 +He,” J. Appl. Phys. 66, 1180 (1989). |
Lee, W., W. J. Lackey, and P. K. Agrawal, “Kinetic analysis of chemical vapor deposition of boron nitride,” J. Amer. Ceramic Soc. 74, 2642 (1991). |
Maya, L., and L. A. Harris, “Pyrolytic deposition of carbon films containing nitrogen and/or boron,” J. Amer. Ceramic Soc. 73, 1912 (1990). |
Michaelidis, M., and R. Pollard, “Analysis of chemical vapor deposition of boron,” J. Electrochem. Soc. 132, 1757 (1985). |
Micro X-ray Tube Operation Manual, X-ray and Specialty Instruments Inc., 1996, 5 pages. |
Moore, A. W., S. L. Strong, and G. L. Doll, “Properties and characterization of codeposited boron nitride and carbon materials,” J. Appl. Phys. 65, 5109 (1989). |
Nakajima et al; Trial Use of Carbon-Fiber-Reinforced Plastic as a Non-Bragg Window Material of X-Ray Transmission; Rev. Sci. Instrum.; Jul. 1989; pp. 2432-2435; vol. 60, No. 7. |
Nakamura, K., “Preparation and properties of amorphous boron nitride films by molecular flow chemical vapor deposition,” J. Electrochem. Soc. 132, 1757 (1985). |
Panayiotatos, et al., “Mechanical performance and growth characteristics of boron nitride films with respect to their optical, compositional properties and density,” Surface and Coatings Technology, 151-152 (2002) 155-159. |
Perkins, F. K., R. A. Rosenberg, and L. Sunwoo, “Synchrotronradiation deposition of boron and boron carbide films from boranes and carboranes: decaborane,” J. Appl. Phys. 69,4103 (1991). |
Rankov. A. “A Novel Correlated Double Sampling Poly-Si Circuit for Readout System in Large Area X-Ray Sensors”, 2005. |
Roca i Cabarrocas, P., S. Kumar, and B. Drevillon, “In situ study of the thermal decomposition of B.sub.2 H.sub.6 by combining spectroscopic ellipsometry and Kelvin probe measurements,” J. Appl. Phys. 66, 3286 (1989). |
Scholze et al., “Detection efficiency of energy-dispersive detectors with low-energy windows” X-Ray Spectrometry, X-Ray Spectrom, 2005: 34: 473-476. |
Shirai, K., S.-I. Gonda, and S. Gonda, “Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method,” J. Appl. Phys. 67, 6286 (1990). |
Tamura, et al “Developmenmt of ASICs for CdTe Pixel and Line Sensors”, IEEE Transactions on Nuclear Science, vol. 52, No. 5, Oct. 2005. |
Tien-Hui Lin et al., “An investigation on the films used as teh windows of ultra-soft X-ray counters.” Acta Physica Sinica, vol. 27, No. 3, pp. 276-283, May 1978, abstract only. |
Vandenbulcke, L. G., “Theoretical and experimental studies on the chemical vapor deposition of boron carbide,” Indust. Eng. Chem. Prod. Res. Dev. 24, 568 (1985). |
Viitanen Veli-Pekka et al., Comparison of Ultrathin X-Ray Window Designs, presented at the Soft X-rays in the 21st Century Conference held in Provo, Utah Feb. 10-13, 1993, pp. 182-190. |
Wagner et al, “Effects of Scatter in Dual-Energy Imaging: An Alternative Analysis”; IEEE; Sep. 1989, vol. 8. No. 3. |
Winter, J., H. G. Esser, and H. Reimer, “Diborane-free boronization,” Fusion Technol. 20, 225 (1991). |
Wu, et al.; “Mechanical properties and thermo-gravimetric analysis of PBO thin films”; Advanced Materials Laboratory, Institute of Electro-Optical Engineering; Apr. 30, 2006. |
www.moxtek.com, Moxtek, AP3 Windows, Ultra-thin Polymer X-Ray Windows, Sep. 2006, 2 pages. |
www.moxtek.com, Moxtek, DuraBeryllium X-Ray Windows, May 2007, 2 pages. |
www.moxtek.com, Moxtek, ProLine Series 10 Windows, Ultra-thin Polymer X-Ray Windows, Sep. 2006, 2 pages. |
www.moxtek.com, Moxtek, Sealed Proportional Counter X-Ray Windows, Oct. 2007, 3 pages. |
Yan, Xing-Bin, et al., Fabrications of Three-Dimensional ZnO—Carbon Nanotube (CNT) Hybrids Using Self-Assembled CNT Micropatterns as Framework, 2007. pp. 17254-17259, vol. III. |
U.S. Appl. No. 13/307,579, filed Nov. 30, 2011; Dongbing Wang. |
U.S. Appl. No. 13/855,575, filed Apr. 2, 2013; Robert C. Davis. |
Number | Date | Country | |
---|---|---|---|
20130315380 A1 | Nov 2013 | US |
Number | Date | Country | |
---|---|---|---|
61689392 | Jun 2012 | US | |
61486547 | May 2011 | US | |
61495616 | Jun 2011 | US | |
61511793 | Jul 2011 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 13453066 | Apr 2012 | US |
Child | 13667273 | US |