Patent Grant
12341137
The present inventive subject matter relates to light emitters, systems incorporating such light emitters, and methods of making such light emitters and systems. In some aspects, the present inventive subject matter is directed to externally interconnected arrays of light emitting devices.
To date, the highest light extraction for a light emitting diode device and a light emitting diode package (LED) (more chip-specific than package-specific) has generally been with small light emitting diode devices (˜300 micrometers×300 micrometers) as compared with “power chips” (light emitting diode devices of ˜0.9-1 mm×0.9-1 mm).
Efforts have been ongoing to develop ways by which light emitters can be used in place of incandescent lights, fluorescent lights and other light-generating devices in a wide variety of applications. In addition, where light emitting diodes (or other solid state light emitters) are already being used, efforts are ongoing to provide light emitting diodes (or other solid state light emitters) which have improved energy efficiency.
Various efforts have been directed at improving light emitting diodes on a common substrate. For example:
U.S. Pat. No. 6,635,503 describes cluster packaging of light emitting diodes;
United States Patent Application Publication No. 2003/0089918 describes broad spectrum light emitting devices and methods and systems for fabricating broad spectrum light emitting devices;
U.S. Pat. No. 6,547,249 describes monolithic series/parallel light emitting diode arrays formed on highly resistive substrates;
U.S. Pat. No. 7,009,199 describes electronic devices having a header and anti-parallel connected light emitting diodes for producing light from AC current;
U.S. Pat. No. 6,885,035 describes multi-chip semiconductor light emitting diode assemblies;
U.S. Pat. Nos. 7,213,942 and 7,221,044 each describe single chip integrated light emitting diodes adapted for direct use with a high AC or DC voltage;
United States Patent Application Publication No. 2005/0253151 describes a light emitting device operating on a high drive voltage and a small drive current;
Japanese Patent Publication No. 2001-156331 describes a plurality of nitride semiconductor layers formed on the same substrate, where the layers are electrically separated from each other and each nitride semiconductor layer is electrically connected with a conductive wire;
Japanese Patent Publication No. 2001-307506 describes two or more light emitting diodes being formed on the same semiconductor substrate; and
United States Patent Application Publication No. 2007/0202623 describes a wafer level package for very small footprint and low profile white light emitting diode devices.
The question of whether or not “power chips” (larger area light emitting diode devices) make sense in a given light emitting diode lighting (illumination) application should be viewed at the “systems level”. That is, it is necessary to consider “chip” (light emitting diode device) efficiency, package efficiency, driver (AC to DC conversion) efficiency and optic efficiency.
The best performance of driver technology for light emitters which include light emitting diode devices (and/or one or more other solid state light emitting devices) is with “higher voltage, lower current” compared to “lower voltage, higher current”. Typical small light emitting diode devices run at ˜20-30 mA of current and ˜3 volts, whereas typical power chips run at ˜350 mA and 3 volts.
The improved driver technology at lower drive currents can be viewed as follows:
Owing to this, driver efficiencies of 80%-85% are obtainable for “power chip technology” while driver efficiencies of 95% are obtainable for standard light emitting diode device technology.
The present inventive subject matter provides light emitters in which activation of the light emitter (i.e., supplying electricity to it) activates more than one light emitting device contained in the light emitter, i.e., the light emitters are not arrays of individual addressable light emitting devices (such as in the case of displays and the like).
In a first aspect of the present inventive subject matter, there is provided a high voltage light emitter, comprising:
The large area structure of this aspect of the inventive subject matter (and others, as described below) includes a plurality of light emitting devices electrically connected in an array. Arrays are sometimes referred to herein as including “rows” and “columns.” The arrays according to the present inventive subject matter each have a dimension of at least three columns of light emitting devices. Each of the “rows” in the array is one of the subsets of parallel-connected light emitting devices. Each of the “columns” in the array includes one of the light emitting devices from each of the subsets, i.e., the array includes a number of columns which is equal to the number of light emitting devices in each of the “rows” (i.e., subsets). The present inventive subject matter, however, is not limited to light emitters in which each subset includes the same number of light emitting devices, i.e., the present inventive subject matter encompasses light emitters in which some or all of the subsets include different numbers of light emitting devices. Thus, the arrays include at least three columns and at least two rows of light emitting devices.
Various arrays are described in commonly assigned and concurrently filed U.S. patent application Ser. No. 12/017,558 (now U.S. Patent Application Publication No. 2008/0179602), filed Jan. 22, 2008, entitled FAULT TOLERANT LIGHT EMITTERS, SYSTEMS INCORPORATING FAULT TOLERANT LIGHT EMITTERS AND METHODS OF FABRICATING FAULT TOLERANT LIGHT EMITTERS, as well as U.S. Patent Application No. 60/885,937, filed on Jan. 22, 2007, entitled “HIGH VOLTAGE SOLID STATE LIGHT EMITTER”, U.S. Patent Application No. 60/982,892, filed on Oct. 26, 2007, entitled “FAULT TOLERANT LIGHT EMITTERS, SYSTEMS INCORPORATING FAULT TOLERANT LIGHT EMITTERS AND METHODS OF FABRICATING FAULT TOLERANT LIGHT EMITTERS”, and U.S. Patent Application No. 60/986,662, filed on Nov. 9, 2007, the entireties of which are hereby incorporated by reference.
The array electrical interconnection provides for the anodes (and/or the cathodes) of the light emitting devices in a row to be electrically connected together and the cathodes to be electrically connected to anodes of the light emitting devices in an adjacent row. The number of columns refers to the number of light emitting devices whose anodes are electrically connected together (i.e., the number of devices in a subset). By electrically connecting the light emitting devices in such an array, the failure of one or more light emitting device in any row of the array may be compensated for by the other die in the row. Similarly, by electrically connecting the light emitting devices in an array, failure of one or more light emitting devices in a column may also be compensated for by the other light emitting devices in the array. Preferably, a large number or rows are included to make the large area multi-die light emitter a higher voltage light emitter to provide a large reduction in resistive losses.
The expression “high voltage”, as used herein, means that the voltage drop across a light emitter is at least three times that of one of the light emitting devices included in the light emitter, i.e.:
In some embodiments according to this aspect of the present inventive subject matter, fewer than all of the plurality of light emitting devices are electrically interconnected in the array of light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the interconnection submount comprises:
In some embodiments according to this aspect of the present inventive subject matter, the interconnection submount further comprises a mirrored layer disposed between the submount substrate and the insulator layer.
In some embodiments according to this aspect of the present inventive subject matter, all of the electrical interconnections of light emitting devices are provided by the pattern of electrically conductive elements.
In some embodiments according to this aspect of the present inventive subject matter, a portion of the interconnections of light emitting devices is provided by the pattern of electrically conductive elements and a portion of the interconnections are provided by conductive elements on the common substrate of the plurality of light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the light emitting devices comprise light emitting diode devices.
In some embodiments according to this aspect of the present inventive subject matter, the light emitting diode devices are isolated from one another by at least one insulating region.
In some embodiments according to this aspect of the present inventive subject matter, the light emitting diode devices are isolated from one another by at least one trench.
A statement that two or more elements are “isolated” from each other means that the respective elements are not electrically connected with each other (even though, for example, they might both be in contact with another element).
Statements herein that two or more elements are each isolated regions of a single monolithic layer (e.g., “the first n-type region, the second n-type region, the third n-type region, the fourth n-type region, the fifth n-type region and the sixth n-type region are each isolated regions of a single monolithic n-type layer”), and similar statements, means that (at least) each of the elements (e.g., each of the light emitting diode devices or each of the first through sixth n-type regions, etc.) includes structural features which persons of ordinary skill in the art recognize inherently result from being formed as a single integral monolithic layer and later being isolated from each other, e.g., by forming one or more trenches, implanting ions, etc., such that electricity cannot be conducted directly between the respective n-type regions. Analogous statements apply with respect to analogous statements herein, e.g., that p-type regions are isolated regions of a single monolithic p-type layer, etc.
In some embodiments according to this aspect of the present inventive subject matter, the light emitting diode devices comprise lateral devices and/or vertical devices and have both cathode and anode connections on a same side of the light emitting diode devices.
In some embodiments according to this aspect of the present inventive subject matter, the plurality of light emitting devices have different sizes and/or shapes.
In a second aspect of the present inventive subject matter, there is provided a high voltage light emitter, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the array comprises at least two serially connected subsets of light emitting devices, each subset comprising at least three light emitting devices electrically connected in parallel.
In some embodiments according to this aspect of the present inventive subject matter, the electrical circuitry comprises power supply circuitry configured to supply power to the light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the electrical circuitry comprises light emitting devices other than the plurality of light emitting devices mechanically interconnected by the common substrate.
In some embodiments according to this aspect of the present inventive subject matter, the electrical circuitry comprises:
In some embodiments according to this aspect of the present inventive subject matter, the plurality of light emitting devices have different sizes and/or shapes.
In some embodiments according to this aspect of the present inventive subject matter, the electrical circuitry comprises a plurality of fuses configured to selectively isolate failing ones of the plurality of light emitting devices.
In a third aspect of the present inventive subject matter, there is provided a high voltage light emitter comprising:
In some embodiments according to this aspect of the present inventive subject matter, the first and second light emitting devices are electrically interconnected to provide an array comprising a series of parallel-connected light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the array comprises at least two serially connected subsets of light emitting devices, each subset comprising at least three light emitting devices electrically connected in parallel.
In some embodiments according to this aspect of the present inventive subject matter, the light emitting devices comprise light emitting diode devices.
In some embodiments according to this aspect of the present inventive subject matter, the light emitting diode devices are vertical light emitting diode devices.
In some embodiments according to this aspect of the present inventive subject matter, the light emitting diode devices are horizontal light emitting diode devices.
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises:
In some embodiments according to this aspect of the present inventive subject matter, the first and/or second plurality of light emitting devices have different sizes and/or shapes.
In a fourth aspect of the present inventive subject matter, there is provided a high voltage light emitter, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises means for selectively interconnecting the plurality of light emitting devices such that fewer than all of the plurality of light emitting devices are interconnected in the array.
In a fifth aspect of the present inventive subject matter, there is provided a method of fabricating a high voltage light emitter, comprising:
In a sixth aspect of the present inventive subject matter, there is provided a method of fabricating a high voltage light emitter, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the method further comprises testing at least one of the light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the method further comprises testing at least one of the light emitting devices and electrically disconnecting one of the light emitting devices from the light emitting device.
In some embodiments according to this aspect of the present inventive subject matter, the step of electrically disconnecting one of the light emitting devices is carried out by etching an anode contact or a cathode contact of one of the light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the step of electrically disconnecting one of the light emitting devices is carried out by applying insulating material on an anode contact or a cathode contact of one of the light emitting devices.
In a seventh aspect of the present inventive subject matter, there is provided a method of fabricating a high voltage light emitter comprising:
In some embodiments according to this aspect of the present inventive subject matter, the method further comprises testing at least one of the light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the method further comprises testing at least one of the light emitting devices and electrically disconnecting one of the light emitting devices from the light emitting device.
In some embodiments according to this aspect of the present inventive subject matter, the step of electrically disconnecting one of the light emitting devices is carried out by etching an anode contact or a cathode contact of one of the light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the step of electrically disconnecting one of the light emitting devices is carried out by applying insulating material on an anode contact or a cathode contact of one of the light emitting devices.
In an eighth aspect of the present inventive subject matter, there is provided a method of fabricating a high voltage light emitter comprising:
In some embodiments according to this aspect of the present inventive subject matter, the electrical connection comprises connecting the non-isolated ones of the plurality of light emitting devices into an array of serially connected parallel subsets of the plurality of light emitting devices.
In a ninth aspect of the present inventive subject matter, there is provided a light emitter, comprising:
In some embodiments according to this aspect of the present inventive subject matter:
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises a substrate layer, the n-type layer and the p-type layer being positioned between the substrate layer and the interconnection element.
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises a substrate layer, the substrate layer being positioned between the p-type layer and the interconnection element.
In a tenth aspect of the present inventive subject matter, there is provided a light emitter comprising an n-type layer and a p-type layer,
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises a substrate, the n-type layer and the p-type layer being mounted on the substrate.
In an eleventh aspect of the present inventive subject matter, there is provided a light emitter comprising an n-type layer and a p-type layer,
In some embodiments according to this aspect of the present inventive subject matter, the first p-contact is also electrically connected to the second p-type region and the third p-type region.
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises a substrate, the n-type layer and the p-type layer being mounted on the substrate.
In a twelfth aspect of the present inventive subject matter, there is provided a lighting element comprising:
In some embodiments according to this aspect of the present inventive subject matter, the interconnection element is positioned between the first light emitter and the second light emitter.
In some embodiments according to this aspect of the present inventive subject matter, the first light emitter and the second light emitter are positioned to a same side of the interconnection element.
In a thirteenth aspect of the present inventive subject matter, there is provided a lighting device, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the first light emitter and the second light emitter are positioned relative to each other such that the first light emitting device first n-type region, the first light emitting device second n-type region and the first light emitting device third n-type region face the second light emitting device first p-type region, the second light emitting device second p-type region and the second light emitting device third p-type region.
In some embodiments according to this aspect of the present inventive subject matter, a surface of the first light emitter n-type layer and a surface of the second light emitter p-type layer are substantially parallel to each other.
In some embodiments according to this aspect of the present inventive subject matter, the lighting device further comprises an n-contact which is electrically connected to the first light emitting device first n-type region, the first light emitting device second n-type region and the first light emitting device third n-type region.
In some embodiments according to this aspect of the present inventive subject matter, the lighting device further comprises a p-contact which is electrically connected to the second light emitting device first p-type region, the second light emitting device second p-type region and the second light emitting device third p-type region.
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises at least one fuse link electrically connected in series with at least one of the light emitting devices.
In some embodiments according to this aspect of the present inventive subject matter, the light emitter further comprises at least one means for opening an electrically conductive connection in series with at least one of the light emitting devices.
In a fourteenth aspect of the present inventive subject matter, there is provided a lighting device, comprising:
In some embodiments according to this aspect of the present inventive subject matter, a surface of the first n-type layer and a surface of the second p-type layer are substantially parallel to each other.
In a fifteenth aspect of the present inventive subject matter, there is provided a lighting device, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the interconnection element is positioned between the first light emitter n-type layer and the second light emitter p-type layer.
In some embodiments according to this aspect of the present inventive subject matter, the first light emitter and the second light emitter are positioned relative to each other such that the first light emitting device first n-type region, the first light emitting device second n-type region and the first light emitting device third n-type region face the second light emitting device first p-type region, the second light emitting device second p-type region and the second light emitting device third p-type region.
In some embodiments according to this aspect of the present inventive subject matter, a surface of the first light emitter n-type layer and a surface of the second light emitter p-type layer are substantially parallel to each other.
In some embodiments according to this aspect of the present inventive subject matter, the lighting device further comprises an n-contact which is electrically connected to the first light emitting device first n-type region, the first light emitting device second n-type region and the first light emitting device third n-type region.
In some embodiments according to this aspect of the present inventive subject matter, the lighting device further comprises an n-contact which is electrically connected to the second light emitting device first p-type region, the second light emitting device second p-type region and the second light emitting device third p-type region.
In a sixteenth aspect of the present inventive subject matter, there is provided a lighting device, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the first p-contact layer and the first n-contact layer are on opposite faces of the first light emitter.
In some embodiments according to this aspect of the present inventive subject matter:
In some embodiments according to this aspect of the present inventive subject matter:
In a seventeenth aspect of the present inventive subject matter, there is provided a lighting device, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the first p-contact layer and the first n-contact layer are on opposite faces of the first light emitter.
In some embodiments according to this aspect of the present inventive subject matter:
In some embodiments according to this aspect of the present inventive subject matter:
In an eighteenth aspect of the present inventive subject matter, there is provided a lighting device, comprising:
In some embodiments according to this aspect of the present inventive subject matter, the first p-contact layer is on an opposite face of the first light emitter with respect to the first light emitter first n-contact region, the first light emitter second n-contact region, and the first light emitter third n-contact region.
In some embodiments according to this aspect of the present inventive subject matter:
In a nineteenth aspect of the present inventive subject matter, there is provided a structure comprising:
In a twentieth aspect of the present inventive subject matter, there is provided a structure comprising:
In some embodiments of the present inventive subject matter, the light emitter further comprises at least one fuse link electrically connected in series with at least one of the light emitting devices.
In some embodiments of the present inventive subject matter, the light emitter further comprises at least one means for opening an electrically conductive connection in series with at least one of the light emitting devices.
The present inventive subject matter now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the inventive subject matter are shown. However, this inventive subject matter should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive subject matter to those skilled in the art. Like numbers refer to like elements throughout. As used herein the term “and/or” includes any and all combinations of one or more of the associated listed items.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the inventive subject matter. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
As noted above, the various aspects of the present inventive subject matter include various combinations of electronic components (transformers, switches, diodes, capacitors, transistors, etc.). Persons skilled in the art are familiar with and have access to a wide variety of such components, and any of such components can be used in making the devices according to the present inventive subject matter. In addition, persons skilled in the art are able to select suitable components from among the various choices based on requirements of the loads and the selection of other components in the circuitry.
A statement herein that two components in a device are “electrically connected,” means that there are no components electrically between the components, the insertion of which materially affect the function or functions provided by the device. For example, two components can be referred to as being electrically connected, even though they may have a small resistor between them which does not materially affect the function or functions provided by the device (indeed, a wire connecting two components can be thought of as a small resistor); likewise, two components can be referred to as being electrically connected, even though they may have an additional electrical component between them which allows the device to perform an additional function, while not materially affecting the function or functions provided by a device which is identical except for not including the additional component; similarly, two components which are directly connected to each other, or which are directly connected to opposite ends of a wire or a trace on a circuit board or another medium, are electrically connected.
Although the terms “first”, “second”, etc. may be used herein to describe various elements, components, regions, layers, sections and/or parameters, these elements, components, regions, layers, sections and/or parameters should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present inventive subject matter.
Embodiments in accordance with the present inventive subject matter are described herein with reference to cross-sectional (and/or plan view) illustrations that are schematic illustrations of idealized embodiments of the present inventive subject matter. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present inventive subject matter should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated or described as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the present inventive subject matter.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive subject matter belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. It will also be appreciated by those of skill in the art that references to a structure or feature that is disposed “adjacent” another feature may have portions that overlap or underlie the adjacent feature.
According to the present inventive subject matter, there is provided a higher voltage, lower current device, so that system benefits can be obtained. While the discussion herein frequently refers to light emitting diode devices, the present inventive subject matter is applicable to all types of light emitting devices, a variety of which are well-known to those skilled in the art. The light emitting devices can be any desired component which is capable of emitting light upon being supplied with electricity, e.g., solid state light emitting devices, including inorganic and organic light emitting devices. Examples of types of such light emitting devices include a wide variety of light emitting diodes (inorganic or organic, including polymer light emitting diodes (PLEDs)), laser diodes, thin film electroluminescent devices, light emitting polymers (LEPs), a variety of each of which are well-known in the art.
In particular embodiments of the present inventive subject matter, the light emitting devices are light emitting diode devices. In some embodiments, the light emitting diode devices are isolated from one another by one or more insulating region(s), in other embodiments, the light emitting diode devices are isolated from one another by one or more trench(es), and in still further embodiments, the light emitting diode devices are isolated by both one or more trench(es) and one or more insulating region(s). The light emitting diode devices may be lateral devices, vertical devices or some of each.
According to the present inventive subject matter, instead of using a single P/N junction, the device is made into multiple regions so that each isolated region can be series connected to obtain the desired series-parallel arrangements that provide high voltage operation and fault tolerance in the device. In this way, a large area (single component) can be used with the benefit of placing (or packaging) fewer chips while still obtaining the best overall system performance.
Some embodiments of the inventive subject matter use flip-chip technology to mount a large area multi-light emitting device to a submount having electrical interconnection formed in and/or on the submount. As used herein, the term “light emitting device” refers to an individual light emitting structure (e.g., a light emitting diode structure) that may be separately electrically connected to other light emitting diode structures in a series and/or parallel configuration. The multiple light emitting devices remain mechanically connected to each other, for example, by a common substrate, and are not singulated but provide a monolithic structure of multiple independently electrically connectable light emitting device structures. Because in these embodiments, the individual light emitting devices will be electrically interconnected by flip-chip mounting to a submount, preferably, each light emitting device includes both anode and cathode contacts on the same side of the monolithic structure.
In accordance with the present inventive subject matter, there is provided a light emitter which comprises a plurality of light emitting devices which are mechanically interconnected to one another (e.g., on a common substrate on which the devices were formed).
The interconnection electrically connects the mechanically connected light emitting devices to provide a “high voltage” monolithic large area structure, in which the light emitting devices are electrically interconnected to provide an array of at least two serially connected subsets of light emitting devices, each subset comprising at least three light emitting devices electrically connected in parallel.
The die which includes a plurality of isolated light emitting devices 16, is separated from a wafer to provide a monolithic structure that includes a plurality of light emitting devices 16. This separation process may, for example, be carried out by sawing, scoring and breaking or other techniques known to those of skill in the art for separating die within a wafer.
The substrate 100 may also be thinned, laser patterned, etched or subjected to chemical mechanical polishing (CMP), or in some embodiments completely removed. For example, as illustrated in
In addition, the light emitting devices 16 may also include one or more phosphors or other luminous materials on the substrate 100. Such luminous material materials may be provided on the substrate 100. For example, a YAG phosphor may be provided in a glob or conformal application on the substrate 100.
The light emitting diode devices 16 may be mounted utilizing, for example, solder bump technology, gold bump technology, conductive epoxies, eutectic bonding or other techniques known to those of skill in the art.
The submount substrate 202 may be any substrate material that provides suitable structural rigidity including, for example, semi-insulating Si, semi-insulating SIC, semi-insulating diamond, CuMo, Ge, metal alloy, metal oxides, Cu, Al, steel with insulator and/or PCB materials, a thermally conductive plastic with or without filled, BN, a transparent ceramic (very small grain size ceramic) or other insulating materials, such as BeO. Preferably, the submount substrate has a high thermal conductivity so as to aid in dissipating heat from the light emitting diode devices. In some embodiments, the submount assembly 200 itself could be a large area light emitting diode device.
The insulator layer 206 may, for example, be an insulating metal oxide (e.g., AlOx), an organic such as fiberglass, a high temperature resin, glass, an insulating or semi-insulating semiconductor, SiN, SiOx, Ta2O5. The mirror layer 204 may be any suitable reflective material and may, in some embodiments, be provided by the insulator layer 206 itself. The insulator layer 206 may also be provided by more than one layer, for example, Bragg reflectors may be incorporated into the insulator layers to provide a mirror. In other embodiments, the mirror layer 204 may be provided by an Al layer or other such reflective material.
The interconnection between contact pads 210 and 212 for the respective light emitting diode device contacts 110 and 112 may be provided as a metallization or other conductive pattern in/on the submount. For example, the interconnection could be provided as an aluminum pattern on the insulator layer 206. Alternatively or additionally, the interconnection could be provided as a conductive pattern within the insulator layer 206, for example, through the use of a damascene process where trenches are formed in the insulator layer 206, a metal layer is formed on the insulator layer 206 and in the trenches, and the metal layer is then planarized to remove portions of the metal layer that are not in the trenches, thus providing an interconnection pattern in the trenches. Alternatively, ITO (Indium and Tin Oxides) may be used as electrical conductive transparent interconnects.
By mounting the substrate 100 to the submount 200, a light emitter 10 is provided as a monolithic large area light emitter having the interconnection scheme illustrated in
As is seen in
In
For example, the light emitter 400 may also include a submount 402 comprising an array of light emitting diode devices of one color 430 and a region of interconnects onto which is attached a monolithic array of light emitting diode devices of another color 420 and may also include a region of transistors and diodes and components to form part or all of a power supply 410 or control circuit. For example, the submount may comprise a GaAs or GaP layer with regions, such regions being delineated areas, including a region comprising layers of AlAs or AlInGaP or AlGaAs forming red orange or yellow light emitting diode devices or arrays of light emitting diode devices and interconnected, and preferably another region(s) where a monolithic arrays of blue and/or green and or cyan and or yellow light emitting diode devices can be mounted.
The embodiments described above provide for flip-chip mounting of the light emitting diode devices on the submount. However, in alternative embodiments, the light emitting diode devices may be mounted substrate side down to the submount. Such embodiments may utilize devices with, for example, a conducting substrate, such as a SiC substrate, with a via from the top side of the device to the back side of the device to provide both contacts on the same side of the device. Examples of such devices are illustrated in
As seen in
In the devices illustrated in
In the devices illustrated in
While not illustrated in
In addition to the electrical/mechanical bonding between the mechanically connected light emitting diode devices and the submount, a thermal connection material may also be provided. The thermal connection may be provided by the electrical and mechanical connection material or may be provided by a separate material. In some embodiments, an electrically non-conductive thermal material may be provided between the submount and the mechanically connected light emitting diode devices to improve heat extraction from the light emitting diode devices through the submount. Such a thermal material may also improve mechanical connection between the submount and the light emitting diode devices, and may also provide improved optical reflection or extraction from the light emitter. Examples of suitable materials include silicones or similar materials which may include particles or nanoparticles of thermally conductive material such as SiO2, AlOx, SiC, BeO, ZO.
In order to provide parallel sets of light emitting diode devices in the series string, the light emitting diode devices in a given row on the two substrates 600 could be electrically interconnected by a metallization or shared p-contact layer in the dimension extending into and out of the page in
While
In addition to the interconnection illustrated in
In each of the dies depicted in
In
The operations illustrated in
Furthermore, while the operations illustrated in
A lighting system is also provided that includes a boost power supply having an output voltage that is greater than a corresponding input voltage, and a light emitter. The light emitter includes a plurality of light emitting devices from a contiguous region of a wafer of light emitting devices, the plurality of light emitting devices being electrically connected as a plurality of serially connected subsets of at least three parallel connected light emitting devices electrically coupled to the output voltage of the boost power supply. The boost power supply may be configured to be coupled to an AC power source to provide the input voltage. Boost power supply configurations are known to those of skill in the art. Boost power supplies may be highly efficient. Furthermore, as discussed above, by providing a high voltage light emitter, I2R losses may be reduced because the current through the light emitter may be reduced in comparison to corresponding lower voltage light emitters. Combining the high voltage light emitter as described herein with a boost power supply may provide very high system efficacies. Thus, in some embodiments of the present inventive subject matter, the high voltage light emitters are provided to operate at a voltage of at least 50 volts, at least 150 volts, at least 325 volts or at least 395 volts. The operating voltage of the high voltage light emitter may be controlled by the forward voltage drop of the individual devices and the number of subsets of parallel-connected devices that are connected in series. Thus, for example, if a 90 volt device is desired, 30 subsets of devices, each with a Vf of 3 volts, could be connected in series.
Representative examples of circuits which include a boost component are described in U.S. Patent Application No. 60/844,325, filed on Sep. 13, 2006, entitled “BOOST/FLYBACK POWER SUPPLY TOPOLOGY WITH LOW SIDE MOSFET CURRENT CONTROL”, and U.S. patent application Ser. No. 11/854,744 (now U.S. Patent Application Publication No. 2008/0088248), filed Sep. 13, 2007, the entireties of which are hereby incorporated by reference.
While embodiments of the present inventive subject matter have been described with reference to a multi-quantum well structure, the present inventive subject matter may be utilized with any suitable light emitting diode device configuration(s). Furthermore, light extraction enhancements, such as internal reflecting layers, transparent ohmic contacts and the like may be utilized to improve light extraction from the individual light emitting diode devices. Accordingly, embodiments of the present inventive subject matter should not be construed as limited to a particular light emitting diode device configuration, but may be used with any configuration capable of being mounted to a submount for electrical interconnection to provide a high voltage monolithic light emitter.
The light emitters of the present inventive subject matter can be supplied with electricity in any desired manner. Skilled artisans are familiar with a wide variety of power supplying apparatuses, and any such apparatuses can be employed in connection with the present inventive subject matter. The light emitters of the present inventive subject matter can be electrically connected (or selectively connected) to any desired power source, persons of skill in the art being familiar with a variety of such power sources.
While inventive aspects have been described above primarily with reference to monolithic devices for operation with DC power sources, additional inventive aspects may provide monolithic devices suitable for operation with AC and/or DC power sources. Examples of such devices are illustrated in
The monolithic device 1100 may be made using any of the fabrication techniques described herein that are capable of providing the interconnections illustrated in
The output of the bridge 2020 is a full wave rectified voltage that is provided to the array 2010. As described above, the number of serially connected devices in the array 2010 may be selected based on the operating voltage provided by the bridge 2020.
The monolithic device 2000 may be provided using any suitable fabrication and interconnection technique as described above. Furthermore, while the monolithic device is illustrated in
Furthermore, while certain embodiments of the present inventive subject matter have been illustrated with reference to specific combinations of elements, various other combinations may also be provided without departing from the teachings of the present inventive subject matter. Thus, the present inventive subject matter should not be construed as being limited to the particular exemplary embodiments described herein and illustrated in the Figures, but may also encompass combinations of elements of the various illustrated embodiments.
Many alterations and modifications may be made by those having ordinary skill in the art, given the benefit of the present disclosure, without departing from the spirit and scope of the inventive subject matter. Therefore, it must be understood that the illustrated embodiments have been set forth only for the purposes of example, and that it should not be taken as limiting the inventive subject matter as defined by the following claims. The following claims are, therefore, to be read to include not only the combinations of elements which are literally set forth but all equivalent elements for performing substantially the same function in substantially the same way to obtain substantially the same result. The claims are thus to be understood to include what is specifically illustrated and described above, what is conceptually equivalent, and also what incorporates the essential idea of the inventive subject matter.
Any two or more structural parts of the light emitters described herein can be integrated. Any structural part of the light emitters described herein can be provided in two or more parts (which are held together, if necessary). Similarly, any two or more functions can be conducted simultaneously, and/or any function can be conducted in a series of steps.
This application is a continuation of U.S. patent application Ser. No. 12/017,600, filed Jan. 22, 2008 (now U.S. Patent Application Publication No. 2008/0211416), the entirety of which is incorporated herein by reference as if set forth in its entirety. This application claims the benefit of U.S. Provisional Patent Application No. 60/982,909, filed Oct. 26, 2007, the entirety of which is incorporated herein by reference. This application claims the benefit of U.S. Provisional Patent Application No. 60/986,795, filed Nov. 9, 2007, the entirety of which is incorporated herein by reference. This application claims the benefit of U.S. Provisional Patent Application No. 60/885,937, filed Jan. 22, 2007, the entirety of which is incorporated herein by reference.
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| Number | Date | Country | |
|---|---|---|---|
| 20200243492 A1 | Jul 2020 | US |
| Number | Date | Country | |
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| 60986795 | Nov 2007 | US | |
| 60982909 | Oct 2007 | US | |
| 60885937 | Jan 2007 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 12017600 | Jan 2008 | US |
| Child | 16804986 | US |
