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H01L21/2654

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/2654in AIIIBV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium Nitride high-electron mobility transistors with p-type laye...
- Patent number 12,142,674
- Issue date Nov 12, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coupled guard rings for edge termination
- Patent number 12,136,645
- Issue date Nov 5, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,125,903
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system of junction termination extension in high voltage...
- Patent number 12,113,101
- Issue date Oct 8, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas Pidaparthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped semiconductor materials
- Patent number 12,094,714
- Issue date Sep 17, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and manufacturing method thereof
- Patent number 12,094,713
- Issue date Sep 17, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,087,762
- Issue date Sep 10, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing high electron mobility transistors having...
- Patent number 12,015,075
- Issue date Jun 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET having a high resistance region
- Patent number 12,009,390
- Issue date Jun 11, 2024
- Fuji Electric Co., Ltd.
- Katsunori Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an electronic device
- Patent number 11,923,477
- Issue date Mar 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Hubert Bono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating a semiconductor device
- Patent number 11,869,963
- Issue date Jan 9, 2024
- Infineon Technologies AG
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,854,909
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,817,318
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 11,804,544
- Issue date Oct 31, 2023
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 11,799,032
- Issue date Oct 24, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Kenichi Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
- Patent number 11,777,024
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and semiconductor device
- Patent number 11,749,622
- Issue date Sep 5, 2023
- SUMITOMO DEVICE INNOVATIONS, INC.
- Chihoko Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped seed layer and method of manufact...
- Patent number 11,721,752
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 11,715,762
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 11,621,678
- Issue date Apr 4, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,621,321
- Issue date Apr 4, 2023
- Mitsubishi Electric Corporation
- Kazuya Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor device
- Patent number 11,610,779
- Issue date Mar 21, 2023
- Toyoda Gosei Co., Ltd.
- Kota Yasunishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,598,022
- Issue date Mar 7, 2023
- Azur Space Solar Power GmbH
- Clemens Waechter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of etching a layer based on a III-V material
- Patent number 11,581,184
- Issue date Feb 14, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective thermal annealing method
- Patent number 11,581,418
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,532,478
- Issue date Dec 20, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatically controlled gallium nitride based sensor and metho...
- Patent number 11,522,079
- Issue date Dec 6, 2022
- Tower Semiconductor Ltd.
- Yakov Roizin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with p-type laye...
- Patent number 11,430,882
- Issue date Aug 30, 2022
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...
- Publication number 20240347343
- Publication date Oct 17, 2024
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Manato DEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240313089
- Publication date Sep 19, 2024
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE, SEMICONDUCTOR STRUCTURE, AND MANFUFACTURING ME...
- Publication number 20240304675
- Publication date Sep 12, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240234578
- Publication date Jul 11, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Kenichi OKAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF
- Publication number 20240222489
- Publication date Jul 4, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY
- Publication number 20240204055
- Publication date Jun 20, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing Method of Forming Semiconductor Device and Semiconduc...
- Publication number 20240145551
- Publication date May 2, 2024
- PANJIT INTERNATIONAL INC.
- Hung Shen Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240136442
- Publication date Apr 25, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Kenichi OKAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128351
- Publication date Apr 18, 2024
- Mitsubishi Electric Corporation
- Hiroyuki OKAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240097000
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT WITH SHIELDING
- Publication number 20240096935
- Publication date Mar 21, 2024
- ROBERT BOSCH GmbH
- Christian Huber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED SEED LAYER AND METHOD OF MANUFACT...
- Publication number 20240021719
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRENCH MOSFET AND FABRICATION METHOD
- Publication number 20240021724
- Publication date Jan 18, 2024
- Sixpoint Materials, Inc.
- TADAO HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230352557
- Publication date Nov 2, 2023
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE S...
- Publication number 20230326959
- Publication date Oct 12, 2023
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20230326967
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ohmic contact of GaN-based electronic device, an...
- Publication number 20230282480
- Publication date Sep 7, 2023
- Korea Atomic Energy Research Institute
- Dong Seok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGER HIGH-ELECTRON MOBILITY TRANSISTOR
- Publication number 20230223468
- Publication date Jul 13, 2023
- NEXPERIA B.V.
- Mark Gajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230215912
- Publication date Jul 6, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ziming DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20230207323
- Publication date Jun 29, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WBG and UWBG Semiconductor with P- and N-type Conductivity and Proc...
- Publication number 20230197454
- Publication date Jun 22, 2023
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Laser Annealing Method
- Publication number 20230155000
- Publication date May 18, 2023
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20230081981
- Publication date Mar 16, 2023
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220376041
- Publication date Nov 24, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Kai HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220376042
- Publication date Nov 24, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Kai HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20220359295
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...
- Publication number 20220344500
- Publication date Oct 27, 2022
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS

in AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gallium nitride transistor with a doped region

Gallium Nitride high-electron mobility transistors with p-type laye...

Coupled guard rings for edge termination

High electron mobility transistor and method for fabricating the same

Method and system of junction termination extension in high voltage...

Semiconductor devices with doped semiconductor materials

Nitride-based semiconductor device and manufacturing method thereof

Nitride semiconductor device

Methods of manufacturing high electron mobility transistors having...

Vertical MOSFET having a high resistance region

Method for manufacturing an electronic device

Semiconductor device and method of fabricating a semiconductor device

Semiconductor structure and method for manufacturing thereof

GaN devices with ion implanted ohmic contacts and method of fabrica...

High electron mobility transistor and method for fabricating the same

Semiconductor device and method for manufacturing semiconductor device

Nitride semiconductor device and fabrication method therefor

Gallium nitride transistor with a doped region

Field effect transistor and semiconductor device

Semiconductor device having doped seed layer and method of manufact...

Transistor gate structures and methods of forming the same

Semiconductor device and power amplifier module

Semiconductor device

Method for producing semiconductor device

Vapor phase epitaxy method

Method of etching a layer based on a III-V material

Selective thermal annealing method

GaN devices with ion implanted ohmic contacts and method of fabrica...

Electrostatically controlled gallium nitride based sensor and metho...

Gallium nitride high-electron mobility transistors with p-type laye...

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

COMPOSITE SUBSTRATE, SEMICONDUCTOR STRUCTURE, AND MANFUFACTURING ME...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF

SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY

Manufacturing Method of Forming Semiconductor Device and Semiconduc...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELEMENT WITH SHIELDING

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE HAVING DOPED SEED LAYER AND METHOD OF MANUFACT...

GaN TRENCH MOSFET AND FABRICATION METHOD

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE S...

TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME

Method for forming ohmic contact of GaN-based electronic device, an...

MULTI-FINGER HIGH-ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

WBG and UWBG Semiconductor with P- and N-type Conductivity and Proc...

Selective Laser Annealing Method

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...