Claims
- 1. In a dry process dispersion imaging film comprising a transparent substrate, a solid, high optical density and substantially opaque layer of a dispersion imaging material deposited on said substrate, said substantially opaque layer of dispersion imaging material, upon application of energy in an amount sufficient to increase the absorbed energy in the material above a certain critical value, being capable of changing to a substantially fluid state in which the surface tension of the material acts to cause the substantially opaque layer of dispersion material where subject to said energy to disperse and change to a discontinuous layer, the improvement wherein there is located on at least the outer side of said opaque layer of dispersion material a substantially transparent passivating layer for isolating said opaque imaging layer from the surrounding atmosphere, said passivating layer comprising a substantially transparent continuous amorphous film having a thickness no greater than about 500 A.degree., said amorphous film comprising at least about 50 atomic weight percent of a Group IV oxide (except oxides of carbon) alloyed or mixed with one or more other different oxides of a metal or an inorganic semiconductor or a metal fluoride which stabilizes the amorphous character of said Group IV oxide.
- 2. The imaging film of claim 1 wherein said Group IV oxide is germanium oxide.
- 3. In an imaging film comprising a transparent substrate, an imaging layer of opaque imaging material imageable by external energy and susceptible to degradation by the external elements, said imaging layer being deposited on said substrate, the improvement wherein there is located on at least the outer side of said imaging layer a substantially transparent passivating layer for isolating said imaging layer of opaque imaging material from the surrounding atmosphere, said passivating layer comprising a substantially transparent continuous amorphous film having a thickness no greater than about 500.degree. A, said amorphous film comprising at least about 50 atomic weight percent of a Group IV oxide (except oxides of carbon) alloyed or mixed with one or more different oxides of a metal or an inorganic semiconductor or a metal fluoride which stabilizes the amorphous character of said Group IV oxide.
- 4. The imaging film of claim 5 wherein said Group IV oxide is germanium oxide.
- 5. The imaging film of claims 1, 2, 3 or 6, wherein said Group IV oxide comprises substantially greater than 60 atomic percent of the passivating layer composition.
- 6. The imaging film of claims 1, or 3 wherein there is a passivating layer as described on each side of said layer of imaging material.
- 7. The imaging film of claim 2 or 4 wherein said substantially opaque layer of dispersion material is a metal or an inorganic semiconductor material.
- 8. The imaging film of claim 1 wherein said passivating layer interfaces said substantially opaque layer of dispersion material which includes means associated with said substantially opaque layer of dispersion material for retarding the change to the discontinuous film, caused by the surface tension, and for controlling the amount of such change in accordance with the intensity of the applied energy above said certain critical value to increase the amount of said change and the area of the openings in the film and decrease the area of the deformed material in the film and, therefore, the optical density of the film in accordance with the intensity of the applied energy above said certain critical value for providing continuous tone imaging of the dry process imaging film, and said Group IV oxide is germanium oxide.
- 9. The imaging film of claim 1 or 2, wherein said substantially opaque layer of dispersion material comprises bismuth and tin which interfaces with said passivating layer.
- 10. The imaging film of claim 1, 2, 3 or 4 wherein said one or more oxides of a metal or semiconductor alloyed or mixed with said Group IV oxide comprise aluminum oxide, tantalum oxide, yttrium oxide, magnesium oxide, zinc oxide, lead oxide, tungsten oxide, cesium oxide, boron oxide, titanium oxide, potassium oxide, bismuth oxide or tellurium oxide, or a combination of two or more of the same.
- 11. The imaging film of claims 2, 3 or 4 wherein said one or more oxides of a metal or semiconductor is aluminum oxide, boron oxide, zinc oxide, lead oxide, titanium oxide, magnesium oxide or potassium oxide, or a combination of two or more of the same.
- 12. The imaging film of claim 1 or 3 wherein said Group IV oxide is germanium oxide, and said one or more different oxides of a metal or semiconductor or a metal fluoride alloyed or mixed with said Group IV oxide comprises at least two such additional materials.
- 13. The imaging films of claim 1, or 3 wherein each passivating layer has a thickness substantially less than 200 A.degree..
RELATED APPLICATION
This application is a continuation-in-part of application Ser. No. 072,438, filed Sept. 4, 1979, now abandoned, which, in turn, is a continuation-in-part of application Ser. No. 827,470, filed Aug. 25, 1977, now U.S. Pat. No. 4,211,838, granted July 8, 1980.
US Referenced Citations (4)
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
72438 |
Sep 1979 |
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Parent |
827470 |
Aug 1977 |
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