Imprint lithography method

Information

  • Patent Grant
  • 8142703
  • Patent Number
    8,142,703
  • Date Filed
    Wednesday, December 17, 2008
    16 years ago
  • Date Issued
    Tuesday, March 27, 2012
    12 years ago
Abstract
A template is treated to provide a surfactant rich region and a surfactant depleted region. A contact angle at the surfactant rich region may be greater than, less than, or substantially similar to a contact angle of the surfactant depleted region.
Description
BACKGROUND INFORMATION

Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller. One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. The semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.


An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Pat. No. 6,936,194, all of which are hereby incorporated by reference herein.


An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable (polymerizable) layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process. The patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid. After solidification, the template is separated from the rigid layer such that the template and the substrate are spaced apart. The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.





BRIEF DESCRIPTION OF DRAWINGS

So that the present invention may be understood in more detail, a description of embodiments of the invention is provided with reference to the embodiments illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the invention, and are therefore not to be considered limiting of the scope.



FIG. 1 illustrates a simplified side view of a lithographic system in accordance with an embodiment of the present invention.



FIG. 2 illustrates a simplified side view of the substrate shown in FIG. 1 having a patterned layer positioned thereon.



FIGS. 3A-3C illustrate simplified side views of a template being treated with imprint fluid containing polymerizable material and surfactant liquid.



FIGS. 4A-4C illustrate simplified side views of a testing substrate having surfactant solution and imprint fluid deposited thereon.



FIGS. 5A-5C illustrate simplified side views of a testing substrate having solvent and imprint fluid deposited thereon.



FIG. 6 illustrates a flow chart of an exemplary method for providing suitable wetting characteristics between a template and a polymerizable material.



FIGS. 7A-7B illustrate a simplified side view and a top down view, respectively, of surfactant depleted regions SDR and surfactant rich regions SRR after imprinting using a first drop pattern.



FIG. 8 illustrates a flow chart of another exemplary method for providing suitable wetting characteristics between a template and a polymerizable material.





DETAILED DESCRIPTION

Referring to the figures, and particularly to FIG. 1, illustrated therein is a lithographic system 10 used to form a relief pattern on substrate 12. Substrate 12 may be coupled to substrate chuck 14. As illustrated, substrate chuck 14 is a vacuum chuck. Substrate chuck 14, however, may be any chuck including, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or the like. Exemplary chucks are described in U.S. Pat. No. 6,873,087, which is hereby incorporated by reference herein.


Substrate 12 and substrate chuck 14 may be further supported by stage 16. Stage 16 may provide motion along the x, y, and z axes. Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).


Spaced-apart from substrate 12 is template 18. Template 18 may include mesa 20 extending therefrom towards substrate 12, mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Alternatively, template 18 may be formed without mesa 20.


Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.


Template 18 may be coupled to chuck 28. Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Pat. No. 6,873,087, which is hereby incorporated by reference herein. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.


System 10 may further comprise fluid dispense system 32. Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12. Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 20 and substrate 12 depending on design considerations. Polymerizable material 34 may comprise a monomer mixture as described in U.S. Pat. No. 7,157,036 and U.S. Patent Publication No. 2005/0187339, both of which are hereby incorporated by reference herein.


Referring to FIGS. 1 and 2, system 10 may further comprise energy source 38 coupled to direct energy 40 along path 42. Imprint head 30 and stage 16 may be configured to position template 18 and substrate 12 in superimposition with path 42. System 10 may be regulated by processor 54 in communication with stage 16, imprint head 30, fluid dispense system 32, and/or source 38, and may operate on a computer readable program stored in memory 56.


Either imprint head 30, stage 16, or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34. For example, imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34. After the desired volume is filled with polymerizable material 34, source 38 produces energy 40, e.g., ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to a shape of surface 44 of substrate 12 and patterning surface 22, defining patterned layer 46 on substrate 12. Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having a thickness t1 and residual layer having a thickness t2.


The above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Pat. No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2004/0188381, and U.S. Patent Publication No. 2004/0211754, each of which is hereby incorporated by reference herein.


In another embodiment, the above-mentioned system and process may be employed using techniques including, but not limited to, photolithography (e.g., various wavelengths including G line, I line, 248 nm, 193 nm, 157 nm and 13.2-13.4 nm), contact lithography, e-beam lithography, x-ray lithography, ion-beam lithography, atomic lithography, and the like.


Currently, within the art, treatment of template 18 with surfactant molecules is provided as a diluted spray-on surfactant/solvent solution. In using the diluted spray-on surfactant/solvent solution, it is generally difficult to obtain precise distribution of the surfactant molecules on the templates.



FIGS. 3A-3C illustrate simplified side views of an exemplary embodiment for providing precise distribution of a surfactant on template 18 to provide two regions: a surfactant rich region SRR and a surfactant depleted region SDR. Generally, treatment of template 18, by contacting template 18 with surfactant (e.g., surfactant liquid 60) deposited on substrate 12, may provide control over distribution of surfactant liquid 60 to provide surfactant rich region SRR and surfactant depleted region SDR. Control of the distribution may further allow for control over the magnitude of the contact angle θSRR within the surfactant rich region SRR and the magnitude of the contact angle θSDR within the surfactant depleted region SDR. As such, the contact angle θSRR within the surfactant rich region SRR and the contact angle θSDR within the surfactant depleted region SDR may target different applications providing for θSRRSDR; θSRRSDR; and/or θSRR≈θSRR≈θSDR. Additionally, by varying the composition of surfactant liquid 60, contact angles θSRR and/or θSDR may be controlled to target different applications providing for θSRRSDR; θSRRSDR; and/or θSRR≈θSDR.


Referring to FIG. 3A, surface 62 of template 18 initially may be substantially free of surfactant liquid 60. Alternatively, surface 62 of template 18 may be pre-treated. For example, surface 62 of template 18 may be pre-treated with the diluted spray-on surfactant/solvent solution described above.


To provide surfactant liquid 60 to template 18, imprint fluid 58 may be deposited on substrate 12. Imprint fluid 58 may include, but is not limited to, polymerizable material 34 and surfactant liquid 60. Polymerizable material 34 may be formed from several different families of bulk materials. For example, polymerizable material 34 may be fabricated from bulk materials including, but not limited to, vinyl ethers, methacrylates, epoxies, thiol-enes and acrylates, and/or the like. Bulk materials are described in further detail in U.S. Pat. No. 7,307,118, which is hereby incorporated by reference herein.


Once imprint fluid 58 is deposited on substrate 12, generally the surfactant liquid 60 may migrate to the gas/liquid interface. As such, by positioning template 18 in contact with imprint fluid 58 as shown in FIG. 3B, at least a portion of surface 62 of template 18 may be treated with surfactant liquid 60.


Generally, after treatment with surfactant liquid 60, surface 62 of template 18 may be defined by the surfactant rich region SRR and/or the surfactant depleted region SDR as illustrated in FIG. 3C. The surfactant rich region SRR may include a layer of surfactant liquid 60 having a thickness t3. For example, the layer of surfactant liquid 60 may have a thickness t3 of approximately 0.2 to 5 nm. The surfactant depleted region SDR may include a layer of surfactant liquid 60 having a thickness t4. Generally, the thickness t4 of the surfactant depleted region SDR may be substantially reduced as compared to the thickness t3 of the surfactant rich region SRR. For example, the thickness t4 of the surfactant depleted region may be zero or near zero.


Distribution of surfactant liquid 60 on template 18 may provide the contact angle θSRR at the surfactant rich region SRR and the contact angle θSDR at the surfactant depleted region SDR to be θSRRSDR; θSRRSDR; and/or θSRR≈θSDR. Generally, the contact angle θSRR at the surfactant rich region SRR and the contact angle θSDR at the surfactant depleted region SDR may be less than approximately 55°.


Further, the composition of surfactant liquid 60 may provide for different contact angles; surfactant liquid 60 may be selected to provide an approximate contact angle θSRR at the surfactant rich regions SRR and an approximate contact angle θSDR at the surfactant depleted regions SDR. As such, selection of surfactant liquid 60 may provide θSRRSDR, θSRRSDR, and/or θSRR≈θSDR, depending on the design considerations of an application.


Exemplary surfactant (e.g., surfactant liquids 60) may include surfactant components such as fluoro-aliphatic polymeric esters, fluorosurfactants of polyoxyethylene, fluorosurfactants of polyalkyl ether, fluoroalkyl polyethers, and/or the like. Exemplary surfactant components are further described in U.S. Pat. No. 3,403,122, U.S. Pat. No. 3,787,351, U.S. Pat. No. 4,803,145, U.S. Pat. No. 4,835,084, U.S. Pat. No. 4,845,008, U.S. Pat. No. 5,380,644, U.S. Pat. No. 5,747,234, U.S. Pat. No. 6,664,354, and U.S. Patent Publication No. 2006/0175736, all of which are hereby incorporated by reference herein.


Exemplary commercially available surfactant components include, but are not limited to, ZONYL® FSO, ZONYL® FSO-100, ZONYL® FSN-100, and ZONYL® FS-300, manufactured by E.I. du Pont de Nemours and Company having an office located in Wilmington, Del.; FC-4432, FC-4430, and FC-430, manufactured by 3M having an office located in Maplewood, Minn.; MASURF® FS425, MASURF® FS1700, MASURF® FS2000, MASURF® FS1239, manufactured by Mason Chemical Company having an office located in Arlington Heights, Ill.; Lodyne S-107B, Lodyne S-220N, manufactured by Ciba-Geigy Corporation having an office located in Basel, Switzerland; Unidyne NS1602, Unidyne NS1603, Unidyne NS1606a, manufactured by Daikin having an office located in Kita-ku, Osaka, Japan; MegaFace R-08 manufactured by Dainippon Ink & Chemical having an office located in Nihonbaski, Chuo, Japan.


Selection of surfactant (e.g., surfactant liquid 60) may be provided through contact angle analysis. Contact angle analysis may include simulated testing of the contact angles on simulated surfactant rich regions SRRSIM and/or simulated surfactant depleted regions SDRSIM.


Referring to FIGS. 4A-4C, contact angle analysis on simulated surfactant rich regions SRRSIM may be provided by contact angle measurement by goniometer 70 on testing substrate 72. Testing substrate 72 may be formed of material that is substantially similar to template 18. For example, testing substrate 72 may be formed of fused silica. Additionally, testing substrate 72 may be sized such that it is substantially similar to template 18 and/or sized to accommodate at least one simulated surfactant rich region SRRSIM.


Testing substrate 72 may be cleaned, baked dry, and stored in a nitrogen box. As illustrated in FIG. 4A, testing substrate 72 may be rinsed with a surfactant solution to provide film 74 having a thickness t5. The surfactant solution may be a diluted surfactant solution. For example, the surfactant solution may be a solution formed of a percentage of weight of surfactant molecules in Isopropyl Alcohol (IPA). Surfactant molecules within the surfactant solution may be similar to surfactant molecules within surfactant liquid 60. Film 74 of the surfactant solution on testing substrate 72 may be dried, and/or a substantial portion of film 74 may evaporate, reducing thickness t5 as illustrated in FIG. 4B. For example, after evaporation, thickness t5 may be substantially zero as IPA within the surfactant solution may be substantially evaporated.


Referring to FIG. 4C, drops of imprint fluid 58 may be deposited on testing substrate 72 to form the simulated surfactant rich region SRRSIM. Each drop of imprint fluid 58 may have a volume VD. For example, the volume VD of each drop may be approximately 5 μL. The volume VD may include polymerizable material 34 and surfactant liquid 60. Surfactant liquid 60 may be comprised of similar surfactant molecules as compared to surfactant solution 74. Alternatively, surfactant liquid 60 may be comprised of different surfactant molecules as compared to surfactant solution 74.


The contact angle of imprint fluid 58 on testing substrate 72 may be measured at multiple locations on testing substrate 72. For example, the contact angle of imprint fluid 58 may be measured at several locations (e.g., seven locations) using goniometer 70. The contact angles at multiple locations may be averaged to provide the magnitude of the contact angle θR-SIM on the simulated surfactant rich regions SRRSIM.


Referring to FIGS. 5A-5C, contact angle analysis on simulated surfactant depleted regions SDRSIM may be provided contact angle measurements of goniometer 70 on testing substrate 72a. Testing substrate 72a may be formed of material that is substantially similar to template 18 and/or material that is substantially similar to testing substrate 72. For example, testing substrate 72a may be formed of fused silica. Additionally, testing substrate 72a may be sized such that it is substantially similar to template 18 and/or sized to accommodate at least one simulated surfactant depleted region SDRSIM.


Similar to testing substrate 72 in FIG. 4, testing substrate 72a in FIG. 5A may be cleaned, baked dry, and stored in a nitrogen box. Testing substrate 72a may then be rinsed with a solvent (e.g., IPA) to provide film 78 having a thickness t6. Film 78 of solvent on testing substrate 72a may be dried and/or at least a portion of film 78 of solvent may evaporate reducing thickness t6 as illustrated in FIG. 5B. For example, thickness t6 may be substantially zero after evaporation of a substantial portion of IPA.


Referring to FIG. 5C, drops of imprint fluid 58 may be deposited on testing substrate 72a to form the simulated surfactant depleted region SDRSIM. Each drop of imprint fluid 58 may have a volume VD2. For example, the volume VD2 of each drop may be approximately 5 μL. The volume VD2 may be substantially similar to the volume VD of drops on testing substrate 72 in FIG. 4. The volume VD2 of drops on testing substrate 72a in FIG. 5C may include polymerizable material 34 and surfactant liquid 60.


The contact angle of imprint fluid 58 on testing substrate 72a may be measured at multiple locations on testing substrate 72a. For example, the contact angle of imprint fluid 58 may be measured at several locations (e.g., seven locations) by goniometer 70. The contact angles at multiple locations may be averaged to provide the magnitude of the contact angle θD-SIM on the simulated surfactant depleted regions SDRSIM.


Variations of surfactant liquid 60 within imprint fluid 58 deposited on testing substrate 72a may provide control over the contact angles within the simulated surfactant rich regions SRRSIM and/or the simulated surfactant depleted regions SDRSIM leading to control over the surfactant rich regions SRR and the surfactant depleted regions SDR during imprinting. For example, imprint fluid 58 formed of surfactant liquid 60 having approximately 0.17% FC4432 and 0.33% FC4430 and polymerizable material 34 may provide for θR-SIM of approximately 20° and θD-SIM of approximately 22° such that θR-SIM≈θD-SIM. In another example, imprint fluid 58 formed of surfactant liquid 60 having approximately 0.5% R-08 and polymerizable material 34 may provide for θR-SIM of approximately 15° and θD-SIM of approximately 22° such that θR-SIMD-SIM. In another example, imprint fluid 58 formed of surfactant liquid 60 having approximately 0.5% FS2000 and polymerizable material 34 may provide for θR-SIM of approximately 18° and θD-SIM of approximately 10° such that θR-SIMD-SIM.


Controlling Contact Angle to Provide Suitable Wetting Characteristics



FIG. 6 illustrates a flow chart of exemplary method 300 for providing suitable wetting characteristics between template 18 and polymerizable material 34. Suitable wetting characteristics may be created by controlling the contact angles θSRR and θSDR. For example, by using results obtained from the contact angle analysis of the simulated surfactant rich region SRRSIM and the simulated surfactant depleted region SDRSIM, surfactant liquid 60 providing approximate the contact angles θR-SIM and θD-SIM may be selected such that θSRRSDR. Application of surfactant liquid 60 on template 18 may then be controlled to provide the surfactant rich region SRR and the surfactant depleted region SDR on template 18. The reduced contact angle θSDR in the surfactant depleted region SDR on template 18, as compared to the contact angle θSRR in the surfactant rich region SRR, may provide polymerizable material 34 an additional driving force to wet the surfactant depleted region SDR. As such, voids formed within patterned layer 46 (shown in FIG. 2) may be significantly reduced during imprinting.


In a step 302, multiple surfactant solutions 74 and/or multiple surfactant liquids 60 may be provided. In a step 304, the contact angle θR-SIM in the simulated surfactant rich regions SRRSIM on testing substrate 72 rinsed with surfactant solution 74 may be determined for each surfactant liquid 60. Alternatively, the contact angle θR-SIM may be determined by a reference document (e.g., a database) from prior testing using surfactant liquid 60 and surfactant solution 74. In a step 306, the contact angle θD-SIM in the simulated surfactant depleted region SDRSIM on testing substrate 72a rinsed in solvent 78 may be determined for each surfactant liquid 60. Alternatively, the contact angle θD-SIM may be determined by a reference document (e.g., database) from prior testing using surfactant liquid 60 and solvent 78. In a step 308, surfactant liquid 60 suitable for imprinting may be determined. For example, surfactant liquid 60 that provides θSRRSDR may be selected. In a step 310, imprint material 58 formed of polymerizable material 34 and surfactant liquid 60 may be deposited on substrate 12. It should be noted that surfactant liquid 60 may be applied directly to template 18 and need not be directly added to polymerizable material 34 prior to contact of template 18 with polymerizable material 34. Generally, surfactant liquid 60 in imprint fluid 58 may migrate towards the gas/liquid interface. In a step 312, template 18 may contact imprint fluid 58 providing at least a portion of surfactant liquid 60 on surface 62 of template 18 to form at least one surfactant rich region SRR and at least one surfactant depleted region SDR. The approximate contact angle θSRR provided within at least one surfactant rich region SRR during imprinting may be less than, greater than, or substantially similar to the approximate contact angle θSDR within at least one surfactant depleted region SDR during imprinting. In a step 314, polymerizable material 34 may be solidified to provide patterned layer 46.


Drop Pattern Shifting Applications Using Contact Angle Analysis


As illustrated in FIGS. 3A-3C, distribution of surfactant on template 18 may provide two regions: the surfactant rich region SRR and the surfactant depleted region SDR. During this stage, the surfactant rich region SRR on template 18 is generally located at the point of contact between template 18 and imprint fluid 58. During filling of the desired volume between mold 20 and substrate 12, as illustrated in FIGS. 7A and 7B, surfactant liquid 60 within imprint fluid 58 may migrate to the gas/liquid interface as template 18 contacts imprint fluid 58 and imprint fluid 58 spreads on surface 44 of substrate 12. As such, surfactant liquid 60 may build up in localized regions on template 18 forming surfactant depleted regions SDR at drop locations 80 and surfactant rich regions SRR between drop locations 80. The surfactant rich regions SRR between drop locations 80 generally form interstitial areas where voids may occur.


Drop shifting may even out surfactant distribution on template 18. For example, FIG. 7B illustrates surfactant depleted regions SDR and surfactant rich regions SRR after a first drop pattern imprint. In a subsequent imprint, a second drop pattern may be used that provides drop locations 80 at a shifted location as compared to the first drop pattern. The shifted location of drops 80 in the subsequent drop pattern may be positioned such that at least one of drops 80 of imprint fluid 58 contacts template 18 at a surfactant rich region SRR.


During imprinting of multiple substrates 12, drop shift patterning may be used successively or sporadically. For example, a first drop pattern may be used to imprint followed by one or more drop shifted patterns. Alternatively, a first drop pattern may be used multiple times prior to one or more drop shifted patterns being used. In a similar fashion, a first drop pattern may be used once followed by multiple uses of one or more drop shifted patterns.


Further, by reducing the contact angle θSDR of the surfactant depleted region SDR as compared to the contact angle θSRR of the surfactant rich region SRR such that θSRRSDR, the lower contact angle θSDR of the surfactant depleted region SDR may provide additional driving force for polymerizable material 34 to wet and fill the surfactant depleted region SDR.



FIG. 8 illustrates a flow chart of another exemplary method 400 for providing suitable wetting characteristics between a template and a polymerizable material using drop pattern shifting. In a step 402, multiple surfactant solutions 74 and/or multiple surfactant liquids 60 may be provided. In a step 404, the contact angle θR-SIM in the simulated surfactant rich regions SRRSIM on testing substrate 72 rinsed with surfactant solution 74 may be determined for each surfactant liquid 60. In a step 406, the contact angle θD-SIM in the simulated surfactant depleted region SDRSIM on testing substrate 72a rinsed in solvent 78 may be determined for each surfactant liquid 60. In a step 408, surfactant liquid 60 that provides a suitable contact angle may be selected. For example, surfactant liquid 60 that provides contact angles θSRRSDR may be selected.


In a step 410, imprint material 58 formed of polymerizable material 34 and surfactant liquid 60 may be dispensed on substrate 12 in a first pattern. Generally, surfactant liquid 60 in imprint fluid 58 may migrate towards the gas/liquid interface. In a step 412, template 18 may contact imprint fluid 58. In a step 414, imprint fluid 58 may be solidified to provide first patterned layer 46. In a step 416, template 18 may be separated from first patterned layer 46 with template 18 having the surfactant rich regions SRR and the surfactant depleted regions SDR upon removal.


In a step 418, imprint material 58 formed of polymerizable material 34 and surfactant liquid 60 may be dispensed in a second drop pattern on second substrate 12. The second drop pattern may be substantially similar to the first drop pattern and shifted a position x and/or a position y such that at least one drop location contacts at least one surfactant depleted region SDR of template 18. In a step 420, template 18 may contact imprint fluid 58. In a step 422, imprint fluid 58 may be solidified to provide second patterned layer 46. The second patterned layer 46 may have limited or no voids.

Claims
  • 1. An imprint lithography method comprising: dispensing on a substrate a first imprint fluid comprising a first polymerizable material and a surfactant;contacting a surface of an imprint lithography template, in superimposition with the substrate, with the first imprint fluid such that at least a portion of the surfactant of the first imprint fluid contacts the surface of the imprint lithography template;solidifying the first imprint fluid;separating the surface of the imprint lithography template and the solidified first imprint fluid to form on the surface of the imprint lithography template a surfactant rich region having a first thickness and a surfactant depleted region having a second thickness; andcontacting the surface of the imprint lithography template having the surfactant rich region and the surfactant depleted region with a second imprint fluid such that at least a portion of the second imprint fluid contacts the surface of the imprint lithography imprint lithography template having the surfactant rich region and the surfactant depleted region,wherein a first contact angle between the imprint lithography template and the second imprint fluid within the surfactant rich region of the imprint lithography template is greater than a second contact angle between the imprint lithography template and the second imprint fluid within the surfactant depleted region of the imprint lithography template.
  • 2. The method of claim 1, wherein the first thickness is greater than the second thickness.
  • 3. The method of claim 1, wherein the second thickness is substantially zero.
  • 4. The method of claim 1, wherein a magnitude of the first contact angle is less than 50 degrees.
  • 5. The method of claim 1, further comprising solidifying the second imprint fluid after the second imprint fluid is contacted with the surface of the imprint lithography template.
  • 6. The method of claim 1, wherein the surface of the imprint lithography template comprises a plurality of spaced-apart recesses or protrusions.
  • 7. The method of claim 1, wherein a magnitude of the second contact angle is less than approximately 22 degrees.
  • 8. The method of claim 7, wherein a magnitude of the second contact angle is less than approximately 18 degrees.
  • 9. The method of claim 1 wherein the first thickness is between approximately 0.2 nm and approximately 5 nm.
  • 10. The method of claim 1, wherein: before contacting the surface of the imprint lithography template with the first imprint fluid, the surface of the imprint lithography template is substantially free of surfactant, andduring contacting the surface of the imprint lithography template with the first imprint fluid, the portion of the surfactant of the first imprint fluid in contact with the surface of the imprint lithography template defines an initial surfactant rich region on the surface of the imprint lithography template and an initial surfactant depleted region on the surface of the imprint lithography template adjacent the initial surfactant rich region on the surface of the imprint lithography template,wherein a third contact angle between the surface of the imprint lithography template and the first imprint fluid within the initial surfactant rich region of the imprint lithography template is greater than a fourth contact angle between the surface of the imprint lithography template and the first imprint fluid within the initial surfactant depleted region of the imprint lithography template.
  • 11. An imprint lithography method comprising: dispensing on a substrate a first imprint fluid comprising a first polymerizable material and a surfactant;contacting a surface of an imprint lithography template, in superimposition with the substrate, with the first imprint fluid such that at least a portion of the surfactant of the first imprint fluid contacts the surface of the imprint lithography template;solidifying the first imprint fluid;separating the surface of the imprint lithography template and the solidified first imprint fluid to form on the surface of the imprint lithography template a surfactant rich region having a first thickness and a surfactant depleted region having a second thickness; andcontacting the surface of the imprint lithography template having the surfactant rich region and the surfactant depleted region with a second imprint fluid, such that at least a portion of the second imprint fluid contacts the surface of the imprint lithography template having the surfactant rich region and the surfactant depleted region,wherein a magnitude of the difference between a first contact angle between the imprint lithography template and the second imprint fluid within the surfactant rich region of the imprint lithography template and a second contact angle between the imprint lithography template and the second imprint fluid within the surfactant depleted region of the imprint lithography template is about 2 degrees.
  • 12. The method of claim 11, wherein the first thickness is greater than the second thickness.
  • 13. The method of claim 11, wherein the second thickness is substantially zero.
  • 14. The method of claim 11, wherein a magnitude of the first contact angle is less than 50 degrees.
  • 15. The method of claim 11, further comprising solidifying the second imprint fluid after the second imprint fluid is contacted with the imprint lithography template.
  • 16. The method of claim 11, wherein the surface of the imprint lithography template comprises a plurality of spaced-apart recesses or protrusions.
  • 17. The method of claim 11 wherein the first thickness is between approximately 0.2 nm and approximately 5 nm.
  • 18. The method of claim 11, wherein: before contacting the surface of the imprint lithography template with the first imprint fluid, the surface of the imprint lithography template is substantially free of surfactant, andduring contacting the surface of the imprint lithography template with the first imprint fluid, the portion of the surfactant of the first imprint fluid in contact with the surface of the imprint lithography template defines an initial surfactant rich region on the surface of the imprint lithography template and an initial surfactant depleted region on the surface of the imprint lithography template adjacent the initial surfactant rich region on the surface of the imprint lithography template,wherein a third contact angle between the surface of the imprint lithography template and the first imprint fluid within the initial surfactant rich region of the imprint lithography template is greater than a fourth contact angle between the surface of the imprint lithography template and the first imprint fluid within the initial surfactant depleted region of the imprint lithography template.
CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of U.S. patent application Ser. No. 11/244,428, filed on Oct. 5, 2005 now U.S. Pat. No. 7,837,921. This application also claims priority to U.S. Provisional Patent Application Ser. No. 61/014,574 filed on Dec. 18, 2007 now abandoned, which is hereby incorporated by reference herein.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

The United States government has a paid-up license in this invention and the right in limited circumstance to require the patent owner to license other on reasonable terms as provided by the terms of 70NANB4H3012 awarded by National Institute of Standards (NIST) ATP Award.

US Referenced Citations (146)
Number Name Date Kind
3403122 Sherman et al. Sep 1968 A
3787351 Olson Jan 1974 A
3810874 Mitsch et al. May 1974 A
4303761 Apotheker Dec 1981 A
4512848 Deckman et al. Apr 1985 A
4585829 Kuo et al. Apr 1986 A
4614667 Larson et al. Sep 1986 A
4617238 Crivello et al. Oct 1986 A
4731155 Napoli et al. Mar 1988 A
4803145 Suzuki et al. Feb 1989 A
4826943 Ito et al. May 1989 A
4835084 Nair et al. May 1989 A
4845008 Nishioka et al. Jul 1989 A
4931351 McColgin et al. Jun 1990 A
5028366 Harakal et al. Jul 1991 A
5169494 Hashimoto et al. Dec 1992 A
5298556 Stephens Mar 1994 A
5331020 Brown et al. Jul 1994 A
5369722 Heming et al. Nov 1994 A
5380644 Yonkoski et al. Jan 1995 A
5389696 Dempsey et al. Feb 1995 A
5397669 Rao Mar 1995 A
5425848 Haisma et al. Jun 1995 A
5462700 Beeson et al. Oct 1995 A
5542978 Kindt-Larsen et al. Aug 1996 A
5569691 Guggenberger et al. Oct 1996 A
5594042 Glover et al. Jan 1997 A
5601641 Stephens Feb 1997 A
5629095 Bujanowski et al. May 1997 A
5629128 Shirakawa et al. May 1997 A
5631314 Wakiya et al. May 1997 A
5747234 Wexler et al. May 1998 A
5772905 Chou Jun 1998 A
5837314 Beaton et al. Nov 1998 A
5849209 Kindt-Larsen et al. Dec 1998 A
5849222 Jen et al. Dec 1998 A
5861467 Bujanowski et al. Jan 1999 A
5969063 Parker et al. Oct 1999 A
6054034 Soane et al. Apr 2000 A
6093455 Kamen et al. Jul 2000 A
6142811 Lin Nov 2000 A
6146811 Kim et al. Nov 2000 A
6169139 van Cleeff Jan 2001 B1
6204343 Barucha et al. Mar 2001 B1
6276273 Aurenty et al. Aug 2001 B1
6309580 Chou Oct 2001 B1
6334960 Willson et al. Jan 2002 B1
6372838 Rao et al. Apr 2002 B1
6375870 Visovsky et al. Apr 2002 B1
6391217 Schaffer et al. May 2002 B2
6447919 Brown et al. Sep 2002 B1
6468642 Bray et al. Oct 2002 B1
6475704 Iwasaki et al. Nov 2002 B1
6482742 Chou Nov 2002 B1
6503914 Benish et al. Jan 2003 B1
6517995 Jacobson et al. Feb 2003 B1
6518189 Chou Feb 2003 B1
6544594 Linford et al. Apr 2003 B2
6565776 Li et al. May 2003 B1
6580172 Mancini et al. Jun 2003 B2
6646662 Nebashi et al. Nov 2003 B1
6649272 Moore et al. Nov 2003 B2
6664306 Gaddam et al. Dec 2003 B2
6664354 Savu et al. Dec 2003 B2
6696220 Bailey et al. Feb 2004 B2
6713238 Chou et al. Mar 2004 B1
6719915 Willson et al. Apr 2004 B2
6721529 Chen et al. Apr 2004 B2
6737489 Linert et al. May 2004 B2
6774183 Palumbo et al. Aug 2004 B1
6776094 Whitesides et al. Aug 2004 B1
6790905 Fitzgerald et al. Sep 2004 B2
6802870 Chang et al. Oct 2004 B2
6809356 Chou Oct 2004 B2
6828244 Chou Dec 2004 B2
6830819 Kaplan et al. Dec 2004 B2
6873087 Choi et al. Mar 2005 B1
6932934 Choi et al. Aug 2005 B2
6936194 Watts Aug 2005 B2
6957608 Hubert Oct 2005 B1
7037574 Paranjpe et al. May 2006 B2
7157036 Choi et al. Jan 2007 B2
7307118 Xu et al. Dec 2007 B2
7309225 McMackin et al. Dec 2007 B2
7365103 Willson et al. Apr 2008 B2
7837921 Xu et al. Nov 2010 B2
20010044075 Nishimura et al. Nov 2001 A1
20010055727 Kubota et al. Dec 2001 A1
20020042027 Chou et al. Apr 2002 A1
20020072009 Kim et al. Jun 2002 A1
20020084553 Nun et al. Jul 2002 A1
20020115002 Bailey et al. Aug 2002 A1
20020126189 Gloster Sep 2002 A1
20020132482 Chou Sep 2002 A1
20020135099 Robinson et al. Sep 2002 A1
20020146642 Kim et al. Oct 2002 A1
20020167117 Chou Nov 2002 A1
20030034329 Chou Feb 2003 A1
20030080471 Chou May 2003 A1
20030080472 Chou May 2003 A1
20030166814 Sparrowe et al. Sep 2003 A1
20030235787 Watts et al. Dec 2003 A1
20040036201 Chou et al. Feb 2004 A1
20040046271 Watts Mar 2004 A1
20040046288 Chou Mar 2004 A1
20040065252 Sreenivasan et al. Apr 2004 A1
20040065976 Sreenivasan et al. Apr 2004 A1
20040110856 Young et al. Jun 2004 A1
20040116548 Willson et al. Jun 2004 A1
20040118809 Chou et al. Jun 2004 A1
20040124566 Sreenivasan et al. Jul 2004 A1
20040131718 Chou et al. Jul 2004 A1
20040137734 Chou et al. Jul 2004 A1
20040156108 Chou et al. Aug 2004 A1
20040168613 Nguyen et al. Sep 2004 A1
20040170770 Nguyen et al. Sep 2004 A1
20040188381 Sreenivasan Sep 2004 A1
20040192041 Jeong et al. Sep 2004 A1
20040197843 Chou et al. Oct 2004 A1
20040211754 Sreenivasan Oct 2004 A1
20040256764 Choi et al. Dec 2004 A1
20050098534 Sreenivasan et al. May 2005 A1
20050160934 Xu et al. Jul 2005 A1
20050187339 Xu et al. Aug 2005 A1
20050192421 Xu et al. Sep 2005 A1
20050236739 Willson et al. Oct 2005 A1
20060035029 Xu et al. Feb 2006 A1
20060036051 Xu et al. Feb 2006 A1
20060062867 Choi et al. Mar 2006 A1
20060062922 Xu et al. Mar 2006 A1
20060076717 Sreenivasan et al. Apr 2006 A1
20060077374 Sreenivasan et al. Apr 2006 A1
20060081557 Xu et al. Apr 2006 A1
20060108710 Xu et al. May 2006 A1
20060145398 Bailey et al. Jul 2006 A1
20060279024 Choi et al. Dec 2006 A1
20070017631 Xu Jan 2007 A1
20070021520 Xu Jan 2007 A1
20070141271 Xu et al. Jun 2007 A1
20070212494 Xu et al. Sep 2007 A1
20070272825 Xu et al. Nov 2007 A1
20080000373 Fetrucci et al. Jan 2008 A1
20080110557 Xu May 2008 A1
20090136654 Xu et al. May 2009 A1
20090272875 Xu et al. Nov 2009 A1
20100109195 Xu et al. May 2010 A1
Foreign Referenced Citations (17)
Number Date Country
1342736 Sep 2003 EP
1491356 Dec 2004 EP
20050722972 Feb 2005 EP
02-24848 Jan 1990 JP
02-92603 Apr 1990 JP
WO 9905724 Feb 1999 WO
WO 0021689 Apr 2000 WO
WO0046035 Aug 2000 WO
WO0054107 Sep 2000 WO
WO 0147003 Jun 2001 WO
WO02069040 Sep 2002 WO
WO03073164 Sep 2003 WO
WO2004061526 Jul 2004 WO
WO2005000552 Jan 2005 WO
WO2005072120 Aug 2005 WO
WO2005082992 Sep 2005 WO
WO2007133235 Nov 2007 WO
Related Publications (1)
Number Date Country
20090136654 A1 May 2009 US
Provisional Applications (1)
Number Date Country
61014574 Dec 2007 US
Continuation in Parts (1)
Number Date Country
Parent 11244428 Oct 2005 US
Child 12336821 US