Gulpen et al, “Growth of Silicides in Ni-SI and Ni-SiC Bulk Diffusion Couples” Z. Metalkd. 86 (1995) pp. 530-539. |
L. A. Clevenger et al, “Nucleation-limited phase selection during reactions in nickel/amorphous silicon multilayer thin films,” J. Appl. Phys., 67(3), Feb. 1, 1990, p. 1325. |
W. F. J. Slijkerman et al, “Formation of the Ni-SiC (001) interface studied by high-resolution ion scattering,” J. Appl. Phys. 66 (2), Jul. 15, 1989, p. 666. |
I. Ohdomari et al, “Investigation of thin-film Ni/single-crystal SiC interface reaction,” J. Appl. Phys. 62 (9). Nov. 1, 1987, p. 3747. |
J. Narayan et al., “Ion-beam and laser mixing of nickel overlayers on silicon carbide,” J. Appl. Phys. 56(6), Sep. 15, 1984, p. 1577. |