Aspects of various embodiments are directed to the use of inductively coupled signal lines to provide protection for circuitry from electrostatic discharge (ESD) events.
ESD events can result in significant damage of circuit components and can result in eventual failure of the circuit. Certain technology advances, such as the increase in data speeds for input and output circuitry, can increase the susceptibility of the protected circuitry to harm from ESD events. Further, increases in data signal rates can result in more stringent requirements on the operational properties of ESD protection circuitry.
These and other matters have presented challenges to ESD protection circuit implementations, for a variety of applications.
Various example embodiments are directed to issues such as those addressed above and/or others which may become apparent from the following disclosure concerning ESD protection using inductive coupling.
In certain example embodiments, aspects of the present disclosure involve an apparatus that includes a first inductive component connected in series with a first signal line of a differential signal path and configured to suppress electrostatic discharge (ESD) current on the first signal line by using a first effective inductance. A second inductive component is connected in series to a second signal line of the differential signal path configured to suppress ESD current on a second signal line of the differential signal path by using a second effective inductance. The first and second inductive components are configured to pass differential signals on the differential signal path by using inductive coupling between the first and second inductive components to provide a third effective inductance.
Consistent with various embodiments, a method is provided that includes: receiving an electrostatic discharge (ESD) event on signal lines forming a differential signal path; suppressing frequency components of the ESD event above a cutoff frequency using effective inductance provided by inductive components connected in series with the signal lines; receiving a differential signal on the signal lines forming the differential signal path; and passing frequency components the differential signal above the cutoff frequency by using inductive coupling between the inductive components to reduce the effective inductance provided by the inductive components.
The above discussion/summary is not intended to describe each embodiment or every implementation of the present disclosure. The figures and detailed description that follow also exemplify various embodiments.
Various example embodiments may be more completely understood in consideration of the following detailed description in connection with the accompanying drawings, in which:
While various embodiments discussed herein are amenable to modifications and alternative forms, aspects thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit the disclosure to the particular embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure including aspects defined in the claims. In addition, the term “example” as used throughout this application is only by way of illustration, and not limitation.
Aspects of the present disclosure are believed to be applicable to a variety of different types of apparatuses, systems and methods involving ESD protection circuitry. In certain implementations, aspects of the present disclosure have been shown to be beneficial when used in the context of ESD protection for integrated circuit (IC) chips that use high speed differential signaling. In some embodiments, coupled inductors are placed on respective signal paths of a differential signal pair. While not necessarily so limited, various aspects may be appreciated through the following discussion of non-limiting examples which use exemplary contexts.
Accordingly, in the following description various specific details are set forth to describe specific examples presented herein. It should be apparent to one skilled in the art, however, that one or more other examples and/or variations of these examples may be practiced without all the specific details given below. In other instances, well known features have not been described in detail so as not to obscure the description of the examples herein. For ease of illustration, the same reference numerals may be used in different diagrams to refer to the same elements or additional instances of the same element. Also, although aspects and features may in some cases be described in individual figures, it will be appreciated that features from one figure or embodiment can be combined with features of another figure or embodiment even though the combination is not explicitly shown or explicitly described as a combination.
Various embodiments of the present disclosure are directed toward an inductive circuit that provides protection from residual ESD event current while passing communication or data signals transmitted using high-speed differential signals. In particular implementations, the inductive circuit uses inductive coupling between two inductive traces or coils to diminish the effective inductance for the differential-mode currents reducing the effective impedance (or reactance). Signals received as part of an ESD event are generally in the form of common mode currents, which are thereby attenuated by the inductive circuit.
Consistent with various embodiments, it has been recognized that an inductive circuit can be designed in a manner that allows for attenuation of high frequency components of common-mode currents from an ESD event while also passing similar high frequency components of differential-mode currents from data signals. For example, the inductive circuit can include two inductive components with respective windings or traces that are specifically designed to be strongly coupled at the relevant frequencies. In this manner, magnetic fields produced by differential-mode currents in the inductive coils counteract or cancel one another. Since the inductance of an inductor is a result in changes to an induced magnetic field, the inductance (and resulting impedance) seen by the differential-mode currents is reduced. Thus, the ESD common-mode currents are subjected to a significantly higher impedance and attenuated accordingly. Due in part to the difference in effective inductance for common-mode and differential-mode currents, the individual inductance value of each inductive component can be set to a value sufficient to provide meaningful attenuation of ESD currents without significantly impacting the data signals.
Particular aspects of the disclosed embodiments do not use a magnetic core between inductors of the inductive circuit. It has been recognized that a magnetic core can suffer from saturation effects for high frequency currents/signals. The saturation effects can reduce the effectiveness of the inductive circuit with respect to high-frequency components of the relevant signals. Various embodiments are directed toward coils that are magnetically coupled primarily due to their physical and geometric proximity in a manner that is effective for high frequencies, including frequencies extending well into the GHz range.
Certain embodiments are directed toward the use of one or more additional ESD protection circuits in combination with the inductive circuits described herein. As an example, the inductive circuits can be used to provide protection of input/output (I/O) circuitry that is part of an integrated circuit (IC) chip. The IC chip includes integrated ESD protection circuitry (e.g., circuitry that is on the die) for the corresponding I/O lines. The integrated ESD protection circuitry can be designed to shunt the majority of the ESD current to a reference voltage (e.g., to ground), while the inductive circuit attenuates residual, high-frequency ESD current. As discussed herein, some of the residual ESD current is not suppressed due to the inductance from the discharge path provided by the ESD protection circuitry. Because inductance increases with frequency, the residual ESD current can be particularly high when there are high frequency components (e.g., fast rise times) within an ESD event. The use of series inductors placed between the source of the ESD event and the ESD protection circuitry can serve to attenuate the residual current before it reaches the circuitry under protection.
It has been recognized that as technology has advanced, circuitry often becomes more susceptible to damage from exposure to ESD currents of short duration. For example, devices are being designed with increasingly thinner gate oxides, which can increase susceptibility to damage from ESD events. The issue can be particularly problematic with respect to circuitry designed for use with high speed data signals. For example, ESD protection circuitry that shunts high-frequency ESD currents can begin to interfere with data signals that approach or overlap in frequency. Accordingly, various embodiments are directed toward a combination of ESD protection circuitry designed to protect against a first (lower) frequency of ESD currents and inductive circuit designed to protect against a second (higher) frequency of ESD currents, while simultaneously passing the second frequency for differential-mode data signals.
Turning now to the figures,
The circuitry 104 can be configured to communicate (receive, transmit, or both) using a differential signal that is present on two different conductive signal lines 106 and 108. The use of differential signaling is particularly prevalent for high-speed data rates, such as data rates associated with the Universal Serial Bus (USB) 3.1, which is mentioned as a non-limiting example of a signal protocol offering data transfer rates in the Gbit/s range.
According to embodiments, ESD protection can be provided using a first inductive component 110, which is shown as being connected in series with a first one of signal lines 106 for the differential signal path. The inductive component 110 is configured to suppress residual electrostatic discharge (ESD) current spikes on the first signal 106 line. A second inductive component 112 is connected in series to a second signal line 108 of the differential signal path. The second inductive component 112 is also configured to attenuate common-mode signals, including ESD current spikes, on the second signal line 108 of the differential signal based upon the corresponding second effective inductance for common-mode current on the differential signal path. The suppression provided by the inductive components is a result of the effective inductance for common-mode signals received on the differential signal pair.
For example, ESD protection circuitry is sometimes implemented using a multiple-stage network of ESD protection circuits. ESD stress is divided between the stages, allowing for the ESD protection circuits to have different properties (e.g., such as a lower clamping voltage for an ESD protection circuit that receives less of the ESD current than another ESD protection circuit). When the ESD protection circuit discharges or shunts the ESD event current to a reference voltage, intrinsic inductance of the discharge path can prevent high frequency components from being properly discharged. The result can be a residual ESD current that has the potential to damage sensitive circuitry. The inductive components 110, 112 can attenuate the residual ESD current by providing a series inductance that provides high impedance to high frequency signal components.
According to embodiments, the first and second inductive components are configured to pass differential signals on the differential signal path by using inductive coupling between the first and second inductive components. The coupling results in a third effective inductance relative to the collective signal. The third effective inductance is a reduced inductance relative to the first and second effective inductances for common-mode ESD currents. In particular, the coupling of magnetic fields between the two inductive components reduces the magnetic field generated by a given differential current, resulting in a corresponding reduction in the effective impedance for the inductors and a given change in current.
Consistent with various embodiments, the first and second inductive components are designed to have first and second effective inductances that are the same value so that attenuation is the same for each line of the differential signal. Practically speaking, the values will vary slightly due to a variety of factors, such as minor differences in coil layout and manufacturing variations.
According to various embodiments, the inductive components 110, 112 are implemented using respective inductive coils that are located on a common substrate. The inductive coils can be inductively coupled to each other by physically and geometrically arranging portions of the coils in close proximity. The inductive coils are also arranged so that their respective magnetic fields are additive (in the same direction) for signals having the same current direction (common-mode currents). In certain embodiments, the inductive coils can be planar coils that are routed parallel to each other for significant portions of their respective paths such that currents in equal and opposite direction (differential-mode currents) produce magnetic fields in opposing directions. The amount that the fields are reduced for differential-mode currents is a direct result of the strength of the coupling between the inductors, which is sometimes referred to as the coupling factor. Various embodiments are directed toward inductive coils arranged in concentric or spiral patterns to provide sufficient coupling and inductance; however, other patterns are possible.
According to some embodiments, the use of planar spiral coils of suitable dimensions allows for the creation of inductances that are effective at high frequencies, including those frequencies corresponding to stress pulses the pose a threat to modern high-speed I/O circuitry (e.g., as may be consistent with the IEC 61000-4-2 standard). For instance, the planar spiral coils may be designed with widths of around 5 μm and spacing of about 10 μm between the coils in order to achieve a coupling factor of at least 0.9, and which may also include coupling factors of 0.94 or higher.
Inductive structure 204 includes inductor components 214 and 216 that are configured to operate with ESD protection circuitry 218 in order to attenuate residual ESD current, which can result from high frequency components of an ESD event. The inductor components 214 and 216 can thereby block and attenuate energy from the frequency components of the ESD event that generate the residual ESD current that would otherwise reach the IC chip 206. According to various embodiments of the present disclosure, the inductor components 214 and 216 are designed to suppress residual ESD current from reaching the IC chip 206 while also (simultaneously) passing differential-mode signals of the same frequency. This is accomplished by configuring the inductor components 214 and 216 to have an effective impedance for common-mode signals that is significantly greater than the effective impedance for differential-mode signals. Consistent with particular embodiments, the attenuated residual current is consistent with an ESD pulse of 30 A and 1 nanosecond in duration and also with data signals operating at 1-5 GHz (or even higher). Other embodiments contemplate frequency components consistent with 60 A and 600 ps in duration. The attenuation may therefore be set to a suitable value (e.g., attenuation might be selected in a range from 1/20 to 1/30).
The IC chip 206 is shown as being located on a printed circuit board (PCB) 202. For instance, the IC chip could be connected (e.g., soldered) in different manners depending upon the particular package format used by the IC chip (e.g., surface mount packages, ball grid arrays, chip carrier packages, small outline packages, pin grid arrays, or flat packages).
In certain embodiments, the inductive structure 204, and the corresponding inductor components 214 and 216, is located on a separate IC chip that can also be placed on the PCB 202. For example, the inductive structure 204 can be a four pin package (two signal inputs and two signal outputs) within which inductive coils are located. The inductive coils can be designed with inductive values and a coupling factor that are collectively sufficient to provide the desired attenuation and signal passing capabilities.
According to various embodiments, the inductive structure 204 can be integrated directly into the PCB 202. For example, the inductor components 214 and 216 can be constructed with conductive traces having sufficient dimensions to produce the desired inductance and coupling.
Certain embodiments are directed toward placement of the inductive structure 204 within the same IC chip 206 package as the circuitry 220 under protection. For example, the inductor components 214 and 216 could be designed into a package substrate upon which the semiconductor die of the IC chip is placed.
According to various embodiments, the intrinsic inductance of the on-chip protection circuit 320 can (unintentionally) prevent some ESD current from being shunted to ground, particularly for high frequency components. The result can be a residual ESD current that has the potential to damage circuitry 322. The coils 316, 318 can suppress ESD current for such high frequency components, which has the effect of suppressing or attenuating the residual ESD current that would otherwise be seen by circuitry 322. The inductive ratio between the on-chip protection circuit 320 and the coils 316 and 318 can be set to control the amount of residual current that remains for a given ESD event. Consistent with certain embodiments, the inductance of the ESD protection circuitry 310 and 320 together with the effective inductance of the coils 316 and 318 further services to effectively attenuate a residual current that can result from high frequency parts of the remaining pulse. The result is less stress due to high frequency components of ESD events, which can improve the overall robustness of the total system to ESD events.
In some embodiments, the inductor components 316 and 318 are located on a separate IC chip from the IC chip 306. In some implementations, the separate chip can also include the ESD protection circuitry 310. For example, the separate chip can be implemented as a five pin package with two inputs, two output, and a ground or reference pin. In other implementations, the ESD protection circuitry 310 is not located on the separate chip. The ESD protection circuitry 310 might, for instance, be part of yet another IC chip, or be constructed from individual components (e.g., diodes) soldered directly to the PCB board.
Consistent with embodiments, the inductor components 316 and 318 can be implemented directly within the PCB 302, as discussed in connection with
The various components within the inductive structure 403 can be located in different locations depending on the desired implementation. For example, both ESD protection circuits 408 and 412 can be co-located with the inductors 410 as part of a single IC chip that is different than the IC chip 404. Alternatively, one or both of the ESD protection circuits 408 and 412 can be implemented using additional IC chips, or using individual components that are directly attached to the PCB, or combinations thereof.
The inductive structures depicted in
As a particular example, USB 3.1 defines high-speed transition as both 5 GBit/s and 10 GBit/s. The resulting 1st harmonics are 2.5 GHz and 5 GHz. The resulting 2nd harmonics are 5 GHz and 10 GHz. The bandwidth of system can therefore be designed to be equal or greater than these values.
In addition to providing sufficient bandwidth for differential-mode signals, the inductors can be designed to provide sufficient attenuation for common-mode signals, particularly signals consistent with ESD events. As a non-limiting example, the series inductance between the source of the ESD event and the circuitry being protected can be designed to provide sufficient damping of the first (fast) current peak of an ESD discharge (e.g., as defined by IEC61000-4-2). The damping can be roughly modeled based upon the ratio of the effective inductance of the series inductance and the effective inductance of the protection circuitry located near the circuitry being protected. Energy from common-mode signals is shared across both inductances based upon this ratio, with the effect being the suppression current that would otherwise reach the protected circuitry. With this understanding, the series inductance can be designed to provide sufficient suppression based upon knowledge of the inductance of the protection circuitry because, at a given frequency, the reactance of an inductor is proportional to the inductance.
Using USB 3.1 as an example, chips are often designed to withstand about 2 A of current without the requirement of additional protection. Assuming a 15 kV discharge of 60 A, the inductance is set to attenuate the 60 A to about 2 A for the relevant frequency components. In a particular non-limiting example, where the inductance of the protection circuitry is around 1 nH. A 30 nH inductor can therefore provide sufficient attenuation for an initial current pulse that is consistent with the IEC61000-4-2 specification. The specific inductive value can vary according to the specific frequency being attenuated as well as the properties of the other components in the system (e.g., the inductance of the circuitry).
Assuming that ESD suppression is sufficient with 30 nH coil (Lnom) and a known coupling coefficient (k) of 0.94 (or larger) this results in an effective Inductance (Leff) of 1.8 nH (or even smaller, with higher k) for differential-mode signals: Leff=Lnom−(k*Lnom).
The bandwidth, or cutoff frequency, (fg) for the differential signal can be calculated by fg=1/(2*Pi*sqr(Leff*Csys). Assuming a Csys of ˜0.5 pF, this will lead to a bandwidth of 5.31 GHz. Here, Csys represents the sum of capacitance provided by various components in the system (e.g., from ESD protection circuitry, on-chip I/O circuitry, PCB, or other sources).
Aspects of the present disclosure are based upon the recognition that a common mode filter with ceramic core may be insufficient to pass signals with high data rates because the coupling is limited at high frequencies. The reduced coupling is related to losses during reversal of magnetism depending on grain size. The time dependent reversal of magnetism leads to decreasing of bandwidth. Standard materials operate in the MHz range. Even nanoparticle materials have only a high coupling up to the GHz range. Various embodiments are directed toward coils coupled without material with high permeability, such as air coils, which thereby do not show this saturation effect at higher frequencies. The coils can therefore be separated by polymers that do not show losses due to reversal of magnetism of the core material.
To the extent that the received signal includes a common-mode signal that is consistent with an electrostatic discharge (ESD) event, the inductive components will attenuate high frequency components of the common-mode signal, per block 1208. Per block 1210 ESD protection circuitry detects an ESD event (e.g., is triggered). In response, the ESD protection circuit is enabled and beings to shunt current, per block 1212. As discussed herein and as consistent with the IEC 61000-4-2 standard, an ESD event can have an initial current spike that is both large in magnitude and short in duration. This can lead to a significant amount of residual ESD current that is not shunted due to the intrinsic inductance of the ESD protection circuit. In such a situation, the attenuation from block 1208 can be relative to residual ESD current that would otherwise reach the protected circuitry. It is recognized that the order of attenuation and current shunting is not necessarily sequential in nature. For example, the ESD protection circuitry can be enabled without (much) attenuation occurring if the received common-mode signal does not contain sufficient high-frequency components during the initial portion of the signal. Moreover, high frequency common-mode signal components can be received and attenuated at any point, whether or not the ESD protection circuitry is enabled. Once the ESD event is completed, the process can restart, per block 1214.
In example embodiments, the ESD protection circuitry may use avalanche breakdown caused by impact ionization in a diode, transistor, or a silicon controlled rectifier (SCR) to shunt ESD current. Other ESD protection solutions are also possible. Some solutions will have different turn-on and turn-off thresholds, which would correspond to the decision blocks 1210 and 1214, respectively.
Terms that indicate orientation, such as upper/lower, left/right, top/bottom and above/below, may be used herein to refer to relative positions of elements as shown in the figures. It should be understood that when the terminology is used for notational convenience, the disclosed structures may be oriented different from the orientation shown in the figures.
For the purposes of this document, the following terms and definitions apply: “signal rise time” refers to the time for a signal to transition between two percentages of the peak signal value, and particularly to 10% to 90% of the peak signal value for purposes of this document; and “planar inductor” refers an inductor with traces or windings located on flat surfaces, in contrast to the helical windings (e.g., around a magnetic core).
The Specification describes and/or illustrates aspects useful for implementing the claimed invention(s) by way of various circuits or circuitry, which may be discussed using terms such as blocks, modules, device, system, unit, controller, comparator, and other circuit-type depictions. Such circuits or circuitry are discussed in connection other elements to explain how certain embodiments may be carried out. For example, in certain of the above-discussed embodiments, one or more illustrated items in this context represent circuits (e.g., discrete analog or logic circuitry or (semi-)programmable circuits) configured and arranged for implementing disclosed operations/activities, as may be carried out in the approaches shown in the figures.
Based upon the above discussion and illustrations, those skilled in the art will readily recognize that various modifications and changes may be made to the various embodiments without strictly following the exemplary embodiments and applications illustrated and described herein. For example, methods as described in connection with the figures may involve steps carried out in various orders, with one or more aspects of the embodiments herein retained, or may involve fewer or more steps. Such modifications do not depart from the true spirit and scope of various aspects of the disclosure, including aspects set forth in the claims.