Claims
- 1. An information recording thin film capable of changing an atomic configuration upon exposure to a recording beam, formed on a substrate directly or through a protective layer composed of at least one of inorganic materials and organic materials, an average composition in the film thickness direction of the information-recording thin film being represented by the following general formula:
- A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta. F.sub..gamma.
- wherein X, Y, Z, .alpha., .beta. and .gamma. are in ranges of 0.ltoreq.X+.beta.<20, 1.ltoreq.Y.ltoreq.30, 25.ltoreq.Z+.gamma..ltoreq.60, 25.ltoreq.Z.ltoreq.60 and 35.ltoreq..alpha..ltoreq.70 in atomic percentage, F is at least one element of As, Sb, Si, and Ge; E is at least one element of Cu, Ag, Au, Sc, Y, Ti, Zr, V, Nb, Cr, Mo, Mn, Fe, Co, Rh, Ni, and Pd; D is at least one element of Se and S; C is at least one element of Sn, Pb, Bi, Zn, Cd, Ga and In; B is at least one element of Tl, halogen elements and alkali metal elements; and A is at least one of other elements than those represented by B, C, D, E and F.
- 2. An information-recording thin film according to claim 1, wherein the element represented by D in the general formula is Se.
- 3. An information-recording thin film according to claim 1, wherein the element represented by C in the general formula is In.
- 4. A method for recording and reproducing information which comprises a step of exposing to a recording beam an information-recording thin film provided on a substrate direction or through a protective layer, an average composition of the thin being represented by the general formula:
- A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta. F.gamma.
- wherein X, Y, Z, .alpha., .beta. and .gamma. are in ranges of 0.ltoreq.X+.beta.<20, 1.ltoreq.Y.ltoreq.30, 25.ltoreq.Z+.gamma..ltoreq.60, 25.ltoreq.Z.ltoreq.60 and 35.ltoreq..alpha..ltoreq.70 in atomic percentage, F is at least one element of As, Sb, Si, and Ge; E is at least one element of Cu, Ag, Au, Sc, Y, Ti, Zr, V, Nb, Cr, Mo, Mn, Fe, Co, Rh, Ni, and Pd,; D is at least one element of Se and S; C is at lest one element of Sn, Pb, Bi, Zn, Cd, Ga and In; B is at least one element of Tl, halogen elements and alkali metal elements; and A is at least one of other elements than those represented by B, C, D, E and F, thereby changing the atomic configuration at the exposed part of the thin film, and a step of exposing a reproducing beam to the thin film, thereby reading out the change in the atomic configuration.
- 5. A method according to claim 4, wherein the recording beam is a laser beam.
- 6. A method according to claim 4, wherein the element represented by D in the general formula is Se.
Priority Claims (3)
Number |
Date |
Country |
Kind |
60-174110 |
Aug 1985 |
JPX |
|
60-226723 |
Oct 1985 |
JPX |
|
61-149503 |
Jun 1986 |
JPX |
|
Parent Case Info
This application is a Continuation of application Ser. No. 188,079, filed Apr. 28, 1988 which is a Continuation of application Ser. No. 893,829, filed Aug. 6, 1986.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3668663 |
Chandross et al. |
Jun 1972 |
|
Non-Patent Literature Citations (1)
Entry |
Japanese Patent Application Kokai (Laid-Open), No. 57-24039, Laid Open 2 Feb 1982, from Japanese Patent Application 55-99253, filed 18 Jul. 1980, by Sato. |
Continuations (2)
|
Number |
Date |
Country |
Parent |
188079 |
Apr 1988 |
|
Parent |
893829 |
Aug 1986 |
|