comprising amorphous/crystalline phase transition cells

Industry

CPC
G11C13/0004

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/0004comprising amorphous/crystalline phase transition cells

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Y-branch type phase-change all-optical boolean logic device and all...
- Patent number 12,189,270
- Issue date Jan 7, 2025
- Huazhong University of Science & Technology
- Xiaomin Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching element and memory device
- Patent number 12,193,340
- Issue date Jan 7, 2025
- Kioxia Corporation
- Taichi Igarashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Data processing near data storage
- Patent number 12,182,455
- Issue date Dec 31, 2024
- Intel Corporation
- Nilesh N. Shah
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including heat insulating layer and method of...
- Patent number 12,178,145
- Issue date Dec 24, 2024
- SK hynix Inc.
- Woo Cheol Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive change element arrays
- Patent number 12,176,028
- Issue date Dec 24, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Drift aware read operations
- Patent number 12,176,029
- Issue date Dec 24, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-referenced and regulated sensing solution for phase change mem...
- Patent number 12,176,030
- Issue date Dec 24, 2024
- Universite d'Aix-Marseille
- Jean-Michel Portal
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid resistive memory
- Patent number 12,170,109
- Issue date Dec 17, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Elisa Vianello
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a split pillar architecture
- Patent number 12,171,105
- Issue date Dec 17, 2024
- Micron Technology, Inc.
- Lorenzo Fratin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 12,159,669
- Issue date Dec 3, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 12,159,666
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Sungkyu Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array having air gaps
- Patent number 12,156,411
- Issue date Nov 26, 2024
- Micron Technology, Inc.
- Paolo Fantini
- G11 - INFORMATION STORAGE
Information Patent Grant
Read and write circuit of three-dimensional phase-change memory
- Patent number 12,154,621
- Issue date Nov 26, 2024
- Huazhong University of Science & Technology
- Xingsheng Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Driver circuit for phase-change memory cells and method of driving...
- Patent number 12,148,470
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Agatino Massimo Maccarrone
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 12,148,472
- Issue date Nov 19, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell in wafer backside
- Patent number 12,148,682
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Biswanath Senapati
- G11 - INFORMATION STORAGE
Information Patent Grant
Triggering of stronger write pulses in a memory device based on pri...
- Patent number 12,131,778
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Partitioned memory architecture with single resistor or dual resist...
- Patent number 12,125,530
- Issue date Oct 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device for matrix-vector multiplications
- Patent number 12,125,531
- Issue date Oct 22, 2024
- International Business Machines Corporation
- Riduan Khaddam-Aljameh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multiple transistor architecture for three-dimensional memory arrays
- Patent number 12,119,056
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Fusion memory device and method of fabricating the same
- Patent number 12,119,336
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Hyunmog Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Read algorithms for three-dimensional crosspoint memory architectures
- Patent number 12,119,057
- Issue date Oct 15, 2024
- Intel Corporation
- Rouhollah Mousavi Iraei
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device architecture
- Patent number 12,119,055
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory including phase-change elements in series with...
- Patent number 12,120,967
- Issue date Oct 15, 2024
- STMicroelectronics S.r.l.
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell
- Patent number 12,114,580
- Issue date Oct 8, 2024
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Forward looking algorithm for vertical integrated cross-point array...
- Patent number 12,112,801
- Issue date Oct 8, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of equalizing bit error rates of memory device
- Patent number 12,105,585
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Eun-chu Oh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 12,106,803
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including chalcogen compound and semiconductor...
- Patent number 12,101,942
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Wooyoung Yang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DECODER ARCHITECTURE FOR MEMORY DEVICE
- Publication number 20250014640
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Publication number 20250014641
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY INCLUDING PHASE-CHANGE ELEMENTS IN SERIES WITH...
- Publication number 20250008847
- Publication date Jan 2, 2025
- STMicroelectronics S.r.l
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Publication number 20240428854
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR...
- Publication number 20240414926
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Wooyoung YANG
- G11 - INFORMATION STORAGE
Information Patent Application
IN-MEMORY COMPUTATION DEVICE FOR IMPLEMENTING AT LEAST A MULTILAYER...
- Publication number 20240404569
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Marcella CARISSIMI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SENSE AMPLIFIER CIRCUIT, CORRESPONDING MEMORY DEVICE AND METHOD OF...
- Publication number 20240404596
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Antonino CONTE
- G11 - INFORMATION STORAGE
Information Patent Application
IN-MEMORY COMPUTATION DEVICE FOR PERFORMING A SIGNED MAC OPERATION
- Publication number 20240404594
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Marcella CARISSIMI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING
- Publication number 20240404590
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER CIRCUIT, CORRESPONDING MEMORY DEVICE AND METHOD OF...
- Publication number 20240404595
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Antonino CONTE
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION...
- Publication number 20240397733
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei Ting Hsieh
- G11 - INFORMATION STORAGE
Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20240386956
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE OF THE PHASE-CHANGE TYPE AND METHOD FOR READING SUCH...
- Publication number 20240386955
- Publication date Nov 21, 2024
- STMicroelectronics International N.V.
- Xavier LECOQ
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED BACKSIDE PCRAM DEVICE STRUCTURE
- Publication number 20240389481
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICE
- Publication number 20240379157
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Application
OTS-BASED DYNAMIC STORAGE STRUCTURE AND OPERATION METHOD THEREOF
- Publication number 20240379159
- Publication date Nov 14, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Hao TONG
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...
- Publication number 20240371440
- Publication date Nov 7, 2024
- Revol-Ver Inc.
- Sung Lae CHO
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STORED WITH ENCODED DATA
- Publication number 20240371442
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-SPEED AND LARGE-CURRENT ADJUSTABLE PULSE CIRCUIT, OPERATING CI...
- Publication number 20240371438
- Publication date Nov 7, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xingsheng WANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, MEMORY ARRAY, AND N-BIT MEMORY UNIT
- Publication number 20240365689
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD
- Publication number 20240363159
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Jen WU
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
- Publication number 20240365690
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chun-Hsu YEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES
- Publication number 20240355385
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES
- Publication number 20240355685
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20240347107
- Publication date Oct 17, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE REGULATOR CIRCUIT FOR A SWITCHING CIRCUIT LOAD
- Publication number 20240339917
- Publication date Oct 10, 2024
- STMicroelectronics S.r.l
- Marco Pasotti
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING AN ELECTRICALLY PROGRAMMABLE MEMORY CELL WITH A...
- Publication number 20240331769
- Publication date Oct 3, 2024
- Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
- Julian Pries
- G11 - INFORMATION STORAGE
Information Patent Application
REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS
- Publication number 20240321350
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...
- Publication number 20240321355
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240321352
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Ryu OGIWARA
- G11 - INFORMATION STORAGE

comprising amorphous/crystalline phase transition cells

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Y-branch type phase-change all-optical boolean logic device and all...

Switching element and memory device

Data processing near data storage

Semiconductor device including heat insulating layer and method of...

Resistive change element arrays

Drift aware read operations

Self-referenced and regulated sensing solution for phase change mem...

Hybrid resistive memory

Memory device with a split pillar architecture

Semiconductor memory having both volatile and non-volatile function...

Memory device

Memory array having air gaps

Read and write circuit of three-dimensional phase-change memory

Driver circuit for phase-change memory cells and method of driving...

Semiconductor memory having both volatile and non-volatile function...

Cross-point array IHOLD read margin improvement

Memory cell in wafer backside

Triggering of stronger write pulses in a memory device based on pri...

Partitioned memory architecture with single resistor or dual resist...

Resistive memory device for matrix-vector multiplications

Multiple transistor architecture for three-dimensional memory arrays

Fusion memory device and method of fabricating the same

Read algorithms for three-dimensional crosspoint memory architectures

Memory device architecture

Phase-change memory including phase-change elements in series with...

Phase-change memory cell

Forward looking algorithm for vertical integrated cross-point array...

Method of equalizing bit error rates of memory device

Multi-step pre-read for write operations in memory devices

Semiconductor device including chalcogen compound and semiconductor...

Patents Applicationslast 30 patents

DECODER ARCHITECTURE FOR MEMORY DEVICE

MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES

PHASE-CHANGE MEMORY INCLUDING PHASE-CHANGE ELEMENTS IN SERIES WITH...

OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT

SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR...

IN-MEMORY COMPUTATION DEVICE FOR IMPLEMENTING AT LEAST A MULTILAYER...

SENSE AMPLIFIER CIRCUIT, CORRESPONDING MEMORY DEVICE AND METHOD OF...

IN-MEMORY COMPUTATION DEVICE FOR PERFORMING A SIGNED MAC OPERATION

TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING

SENSE AMPLIFIER CIRCUIT, CORRESPONDING MEMORY DEVICE AND METHOD OF...

PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION...

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

MEMORY DEVICE OF THE PHASE-CHANGE TYPE AND METHOD FOR READING SUCH...

EMBEDDED BACKSIDE PCRAM DEVICE STRUCTURE

CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICE

OTS-BASED DYNAMIC STORAGE STRUCTURE AND OPERATION METHOD THEREOF

CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...

NON-VOLATILE MEMORY STORED WITH ENCODED DATA

HIGH-SPEED AND LARGE-CURRENT ADJUSTABLE PULSE CIRCUIT, OPERATING CI...

MEMORY DEVICE, MEMORY ARRAY, AND N-BIT MEMORY UNIT

MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD

NOVEL PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES

ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES

SOCKET DESIGN FOR A MEMORY DEVICE

VOLTAGE REGULATOR CIRCUIT FOR A SWITCHING CIRCUIT LOAD

METHOD OF OPERATING AN ELECTRICALLY PROGRAMMABLE MEMORY CELL WITH A...

REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS

PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...

MEMORY DEVICE