Claims
- 1. An insulated-gate type field effect transistor comprising:
- an active layer made of a semiconductor of a low impurity concentration;
- a source electrode and a drain electrode formed on said active layer and each of said source electrode and said drain electrode made of a metal conducting film;
- a main gate electrode formed between said source electrode and said drain electrode on a gate insulating film so as to face said active layer;
- a first subgate electrode formed between said drain electrode and said main gate electrode in said gate insulating film and spaced closer to said active layer than said main gate electrode; and
- a second subgate electrode formed between said source electrode and said main gate electrode in said gate insulating film and spaced closer to said active layer than said main gate electrode and said first and second subgate electrodes symmetrically arranged relative to said main gate electrode, and the thickness of said gate insulating film between a first edge of said main gate electrode and a first edge of said first subgate electrode and the thickness of said gate insulating film between a second edge of said main gate electrode and a first edge of said second subgate electrode being thinner than the thickness of said gate insulating film between a second edge of said first subgate electrode and said active layer and the thickness of said gate insulating film between a second edge of second subgate electrode and said active layer, and a planar channel formed between said source electrode and said drain electrode.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-278716 |
Sep 1991 |
JPX |
|
Parent Case Info
This a continuation of application Ser. No. 07/751,758, filed Sep. 28, 1992, abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4319263 |
Rao |
Mar 1982 |
|
5124769 |
Tanaka et al. |
Jun 1992 |
|
Foreign Referenced Citations (4)
Number |
Date |
Country |
0197531 |
Oct 1986 |
EPX |
1505959 |
Dec 1967 |
FRX |
60-226180 |
Nov 1985 |
JPX |
60-233859 |
Nov 1985 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Proceedings of the IEEE, Aug. 1968, "SB-IGFET: An insulated-gate field effect transistor using schottky barrier contacts for source and drain", Lepselter et al., pp. 1400-1402. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
951758 |
Sep 1992 |
|