This patent specification relates to coupling signals between different layers of an integrated circuit device.
Integrated circuit devices have become essential components in a wide variety of products ranging from computers and robotic devices to household appliances and automobile control systems. New applications continue to be found as integrated circuit devices become increasingly capable and fast while continuing to shrink in physical size and power consumption. As used herein, integrated circuit device refers broadly to a device having one or more integrated circuit chips performing at least one electrical and/or optical function, and includes both single-chip and multi-chip devices. In multi-chip devices, each integrated circuit chip is usually separately fabricated or “built up” from a substrate, and the resultant chips are bonded together or otherwise coupled into a common physical arrangement.
Advances in integrated circuit technology continue toward reducing the size of electrical circuits to smaller and smaller sizes, such that an entire local electrical circuit (e.g., a group of memory cells, a shift register, an adder, etc.) can be reduced to the order of hundreds of nanometers in linear dimension, and eventually even to tens of nanometers or less. At these physical scales and in view of ever-increasing clock rates, limitations arise in the data rates achievable between different parts of the integrated circuit device, with local electrical circuits having difficulty communicating with “distant” electrical circuits over electrical interconnection lines that may be only a few hundred or a few thousand microns long.
To address these issues, proposals have been made for optically interconnecting different electrical circuits in an integrated circuit device. For example, in the commonly assigned U.S. 2005/0078902A1, a photonic interconnect system is described that avoids high capacitance electric interconnects by using optical signals to communicate data between devices.
As part of such optical interconnection schemes, optical coupling between planar waveguides located on different integrated circuit layers is often needed. In a simplest proposal applicable to inter-chip coupling, two chips are mounted side-by-side such that an edge facet of a first waveguide on the first chip directly abuts an edge facet of a second waveguide on the second chip. In another proposal, an optical fiber is used to transfer optical signals between the two edge facets of the different chips. In yet another proposal, an optical fiber is used to couple between a surface-emitting source on the first chip and a detector on the second chip, each chip having electrical-to-optical (E-O) and optical-to-electrical (O-E) converter(s) as necessary. However, issues arise for such proposals that limit their operational scalability (e.g., the number of optical interconnections achievable between chips) and/or the amount of achievable device compactness.
Vertical optical coupling schemes have also been proposed in which an optical signal is transferred between planar waveguides located on facing layers of vertically arranged chips, the vertical arrangement providing for a smaller footprint while also accommodating a larger number of optical interconnections between the facing chips. Proposals include the use of angled reflecting structures and/or grating structures for urging vertical projection out of one planar waveguide and corresponding vertical collection into the other planar waveguide.
Issues arise, however, in relation to optical coupling efficiency, especially as the vertical spacing between the planar waveguides is increased. Increases in vertical spacing between the two waveguiding layers may be desirable in many circumstances, such as for accommodating different chip assembly methods, enhancing heat dissipation, reducing crosstalk between facing electrical elements, accommodating vertical surface features on the facing surfaces, or for a variety of other reasons. Other issues include one or more of device complexity, alignment issues, fabrication cost, and mechanical stability during or after device fabrication. Still other issues arise as would be apparent to one skilled in the art upon reading the present disclosure. It would be desired to provide for optical coupling between different layers of an integrated circuit device, whether such layers be all-optical or electro-optical, in a manner that addresses one or more of these issues.
In one embodiment, a method for coupling an optical signal from a first waveguide in a first layer of an integrated circuit device to a second waveguide in a second layer of the integrated circuit device is provided, the second layer being vertically separated from the first layer. The optical signal is propagated through a spheroidal element optically coupled to each of the first and second waveguides and positioned between the first and second layers.
Also provided is an integrated circuit device comprising a first layer including a first waveguide and a second layer including a second waveguide, the first and second layers being vertically separated. A spheroidal element is optically coupled to each of the first and second waveguides and positioned between the first and second layers. The spheroidal element facilitates coupling of an optical signal between the first waveguide and the second waveguide.
Also provided is an apparatus comprising a vertical arrangement of integrated circuit layers including a first layer and a second layer. A first waveguide is formed in the first layer and a second waveguide is formed in the second layer. Spheroidal coupling means in optical communication with each of the first and second waveguides is provided for coupling an optical signal therebetween.
The layers 104 and 108 may both be all-optical or may both be electrooptical. Alternatively, one of the layers 104 and 108 may be all-optical and the other may be electro-optical. In one embodiment, the lower layer 104 may comprise densely-packed arrays of electrical circuits, each being laterally adjacent to a nearby optical communications port having O-E and E-O conversion elements, while the upper layer 108 may comprise an “optical LAN” facilitating information transfer of information among “distant” electrical circuits on the layer 104. In another embodiment, the layers 104 and 108 may be used for facilitating the photonic interconnect system described in the commonly assigned U.S. 2005/0078902A1, supra.
According to an embodiment, integrated circuit device 102 further comprises a spheroidal element 114 positioned between the lower layer 104 and the upper layer 108, the spheroidal element 114 being optically coupled to each of the first waveguide 106 and the second waveguide 110 such that an input optical signal 112 propagating along the first waveguide 106 is coupled into an output optical signal 116 in the second waveguide 110. In one embodiment, the spheroidal element 114 is configured and dimensioned to sustain a whispering gallery mode (WGM) resonance at a frequency of the optical signal 112, with WGM resonance modes being indicated by arrows along a propagation loop 118 in
The spheroidal element 114 comprises a material having a higher index of refraction than that of the surrounding material, which can be air or a low-index material. Light propagates in a curved path along an outer periphery of the spheroidal element 114 by total internal reflection, the spheroidal element 114 having a diameter that is generally large relative to the wavelength of the light. Generally speaking, a WGM resonance condition can arise where the circumferential path length corresponds to an integer number of wavelengths of the light. In an embodiment where the spheroidal element 114 is a solid microsphere with diameter D surrounded by air and having a refractive index of ns, the WGM resonance condition can be characterized by Eq. (1) below:
In the above equation, λ is the free space wavelength of the light, M is an integer substantially greater than 1 (M>>1) and in practice often substantially greater than 100 (M>>100), and f is a parameter-dependent factor that is less than 1 but that approaches 1 as M grows substantially larger than 100. Generally speaking, the parameter f will be dependent on other parameters such as particular geometries and polarizations used, as well as the particular resonance mode excited. Microspheres fabricated using known methods, such as silica microspheres shaped by surface tension forces, have been demonstrated to sustain WGM resonances with very high quality factors Q (a measure relating to a ratio of stored modal energy versus cavity losses), for example, 10000 and greater. In general, the light is laterally confined to within a few wavelengths on either side of an x-z plane passing through a center of the spheroidal element 114. The WGM resonance condition of Eq. (1) is achieved at a periodic succession of peak wavelengths, each corresponding to a successive value of the integer M, the peak wavelengths being approximately separated by a distance Δλ set forth in Eq. (2):
It is to be appreciated that the use of a microsphere for the spheroidal element 114, which is presented for clarity of description above, is but one of many different types of spheroidal elements that can be used in accordance with the present teachings. More generally, the spheroidal element 114 can have a variety of different shapes, material compositions, structural compositions, and sizes without departing from the scope of the present teachings. As used herein, the term spheroidal volume broadly includes any solid volume providing an at least roughly circular or ellipsoidal propagation loop within a plane passing therethrough, while also having at least some degree of laterally arcuate shape along a periphery of the propagation loop to maintain the light near that plane. Thus, for example, the spheroidal element 114 of
A wide variety of different material and structural compositions can be used for the spheroidal element 114, including solid structures, hollowed structures, and coated structures. For example, the spheroidal element can comprise a low-index core region surrounded by a coating of high-index material. Generally speaking, modal stability and device performance is enhanced where the spheroidal element 114 has a substantially higher refractive index (e.g., 2:1 or 3:1) than the surrounding material at its outer surface. Generally speaking, the size of the spheroidal element 114 can be made smaller as this refractive index ratio is increased. One particularly suitable material for the spheroidal element 114 is chalcogenide glass, which has a refractive index in the range of 2.4-2.8. Other suitable materials include other high-index glasses and sapphire. If a high-index outer coating is used, that coating should have a thickness of at least about λ/2nc for sufficient propagation of an optical signal around the periphery of the spheroidal element 114, where nc is the refractive index of the coating.
The waveguides 106 and 110 can be formed onto or into the layers 104 and 108 according to any of a variety of different waveguiding material systems. In one embodiment, silicon-on-insulator (SOI) substrates and an Si/SiO2 material system is used. In another embodiment, an SiN/SiO2 material system is used. Other suitable material systems include, but are not limited to, GaAs/AlGaAs, InGaAsP/InP, and other III-V material systems.
A wide variety of different sizes for the spheroidal element 114 and a wide variety of different wavelengths for the optical signal 112 are within the scope of the present teachings. By way of example and not by way of limitation, the optical signal 112 may be in the range of 400-1600 nm and the spheroidal element 114 may be between 20 μm and 2 mm in size.
In one embodiment, the spheroidal element 114 is dimensioned and configured relative to the waveguides 106 and 110 such that evanescent coupling is achieved for the propagating optical signal, wherein an evanescent field of the WGM modes overlaps with evanescent fields of the waveguides 106 and 110 in a phase-matched manner. Generally speaking, very high coupling efficiencies between the input optical signal 112 and the output optical signal 116, such as 90 percent or greater, can be achieved when such evanescent coupling is used. In other embodiments, one or both of the waveguides 106/110 can be coupled into the spheroidal element 114 using a non-evanescent coupling method, such as direct coupling by facet contact.
In some embodiments, the waveguides 106 and 110 are identical to each other in the vicinity of the spheroidal element 114, and the spheroidal element 114 is configured and positioned in a symmetric manner relative to each of them, such that a two-way vertical coupler is achieved. In other embodiments, these structures and/or couplings are made asymmetric in a manner that optimizes coupling in one direction, usually at the expense of coupling in the other direction.
Particular parameters for achieving coupling between the input optical signal 112 and the output optical signal 116 will be highly dependent on the particular wavelengths, refractive indices, loss coefficients, polarizations, coupling geometries, and physical dimensions used, as well as the particular resonance modes that are to be excited. By way of example only, and not by way of limitation, for a typical optical communications wavelength of 1.55 μm, Si/SiO2 waveguides can be used with a chalcogenide glass spheroidal element 160 μm in diameter. In view of the present disclosure, one skilled in the art would be readily able to mathematically and/or empirically determine suitable combinations of such parameters providing sufficient optical coupling.
In the embodiment of
Also shown in
Also shown in
The shape of the curve 302 for P226/P212(A) is characterized in part by a WGM resonance bandwidth W, expressed as a percentage of the WGM mode separation Δλ, and by a peak height percentage H. The values for W, H, and Δλ can be highly influenced by variation of different material parameters, geometries, and materials used in the vertical coupling scheme of
As indicated in
Also shown in
Fabrication of integrated circuit devices according to one or more of the embodiments can be achieved using known integrated circuit fabrication methods including, but not limited to: deposition methods such as chemical vapor deposition (CVD), metal-organic CVD (MOCVD), plasma enhanced CVD (PECVD), chemical solution deposition (CSD), sol-gel based CSD, metal-organic decomposition (MOD), Langmuir-Blodgett (LB) techniques, thermal evaporation/molecular beam epitaxy (MBE), sputtering (DC, magnetron, RF), and pulsed laser deposition (PLD); lithographic methods such as optical lithography, extreme ultraviolet (EUV) lithography, x-ray lithography, electron beam lithography, focused ion beam (FIB) lithography, and nanoimprint lithography; removal methods such as wet etching (isotropic, anisotropic), dry etching, reactive ion etching (RIE), ion beam etching (IBE), reactive IBE (RIBE), chemical-assisted IBE (CAIBE), and chemical-mechanical polishing (CMP); modifying methods such as radiative treatment, thermal annealing, ion beam treatment, and mechanical modification; and assembly methods such as wafer bonding, surface mount, and other wiring and bonding methods.
Whereas many alterations and modifications of the embodiments will no doubt become apparent to a person of ordinary skill in the art after having read the foregoing description, it is to be understood that the particular embodiments shown and described by way of illustration are in no way intended to be considered limiting. By way of example, while in one or more the above embodiments the spheroidal element and the input/output waveguides are passive components, in other embodiments active components may be used that, responsive to one or more electrical and/or optical control signals, serve to modulate, amplify, filter, multiplex/demultiplex, or otherwise control a property of the optical signal.
By way of further example, although evanescent coupling and direct coupling by facet contact are described for coupling the planar waveguides with the spheroidal element, in other embodiments the optical signal may couple into the spheroidal element by angular projection from grating structures, reflecting structures, or various modulated optical sources. By way of still further example, although the present teachings are particularly advantageous in the context of ever-shrinking hybrid optoelectronic devices, they are readily applicable to all-optical integrated circuit devices (e.g., as used in all-optical computing devices), as well as to larger-sized devices.
By way of even further example, although one or more of the embodiments is particularly useful for obviating the need for optical fiber connections between chips, optical fibers may still be used for various other purposes in the integrated circuit device (e.g., importing higher-power optical carrier signals from off-chip lasers) without departing from the scope of the present teachings. By way of still further example, although one or more of the embodiments is particularly useful where the layers are each contained on integrated circuit chips, the scope of the present teachings includes scenarios where one layer is on an integrated circuit chip, and the other layer is on a printed-circuit board or other type of back-plane/packaging assembly. Thus, reference to the details of the described embodiments are not intended to limit their scope.