Claims
- 1. An integrated circuit forming a unit, lithographically produced on a semi-conductor wafer using at least one individual fabrication mask, comprising cell arrays each having a number of cells wherein at least one of said cells in one of said cell arrays is connected for communication across a mask boundary to at least one other neighboring cell neighboring said at least one of said cells and forming part of another one of said cell arrays, said unit being larger than an area of any one of said at least one individual fabrication mask used to form any one of the cell arrays.
- 2. The integrated circuit as in claim 1, wherein said cells comprise direct output means.
- 3. The integrated circuit as in claim 1, wherein each said cell array is produced with identical lithographic patterns.
- 4. The integrated circuit as in claim 3, wherein said communication means comprises non-alignment-sensitive contacts.
- 5. The integrated circuit as in claim 4, wherein said non-alignment-sensitive contacts comprise conductive lines having a main portion and an end portion, said end portion being wider than said main portion.
- 6. The integrated circuit as in claim 5, wherein said conductive line end portion comprises a loop-like portion.
- 7. The integrated circuit as in claim 6, wherein said loop-like portion comprises a conductor whose width is substantially similar to the width of said main portion of said conductive lines.
- 8. The integrated circuit as in claim 1, wherein said integrated circuit comprises a plurality of layer including a processor/memory layer and a bus layer, wherein said connection across a mask boundary is provided by communication means at the same layer as said processor/memory layer.
- 9. The integrated circuit as in claim 1, wherein said communication means comprises non-alignment-sensitive contacts.
- 10. The integrated circuit as in claim 9, wherein said non-alignment-sensitive contacts comprise conductive lines having a main portion and an end portion, said end portion being wider than said main portion.
- 11. The integrated circuit as in claim 10, wherein said conductive line end portion comprises a loop-like portion.
- 12. The integrated circuit as in claim 11, wherein said loop-like portion comprises a conductor whose width is substantially similar to the width of said main portion of said conductive lines.
- 13. An integrated circuit forming a unit, lithographically produced on a semi-conductor wafer using at least one individual fabrication mask, comprising cell arrays each having a number of cells wherein at least one of said cells in one of said cell arrays is connected for communication to at least one other cell neighboring said at least one of said cells and forming part of another one of said cell arrays, further comprising non-alignment-sensitive contacts, wherein at least one of said non-alignment-sensitive contacts in at least one of said cell arrays is connected to at least another one of said non-alignment-sensitive contacts in another one of said cell arrays, said unit being larger than an area of any one of said at least one individual fabrication mask used to from any one of the cell arrays.
- 14. A method for fabricating an integrated circuit on a semi-conductor wafer, said integrated circuit forming a unit comprising cell arrays having at least one cell, the method comprising lithographically exposing a surface of said wafer using at least one individual fabrication mask to produce cells in each of said cell arrays wherein at least one of said cells in one of said cell arrays is connected across a mask boundary for communication to at least another of said cells, neighboring said at least one of said cells, and comprised in another one of said cell arrays, said unit being larger than an area of any one of said at least one individual fabrication mask used to from any one of the cell arrays.
- 15. The method for fabricating an integrated circuit as in claim 14, wherein said circuit comprises a plurality of layers including a processor/memory layer, said connection across a mask boundary being provided by communication means at the same layer as said processor/memory layer.
- 16. The method for fabricating an integrated circuit as in claim 14, further comprising producing said cells with identical lithographic patterns.
- 17. The method for fabricating an integrated circuit as in claim 14, wherein said lithographically exposing comprises producing non-alignment-sensitive contacts, wherein at least one of said non-alignment-sensitive contacts in at least one of said cell arrays is connected to at least another one of said non-alignment-sensitive contacts in another one of said cell arrays.
- 18. An integrated circuit comprising an array of cells lithographically produced using at least one individual fabrication mask, said cells having contacts connected to at least some neighboring cells across mask boundaries, said array of cells being larger than an area of any one of said at least one individual fabrication mask used to form the any one of the cells.
- 19. The integrated circuit as in claim 18, wherein said cells are produced with identical lithographic patterns.
- 20. The integrated circuit as in claim 18, wherein said contacts comprise non-alignment sensitive contacts.
- 21. The integrated circuit as in claim 18, wherein said circuit comprises a plurality of layers including a data bus layer and a processor/memory layer, said contacts are provided on said processor/memory layer.
Parent Case Info
The present application is a continuation of U.S. patent application Ser. No. 08/323,580 filed Oct. 17, 1994 (U.S. Pat. No. 5,801,715), which is a continuation of U.S. patent application Ser. No. 07/803,166 filed Dec. 6, 1991.
US Referenced Citations (28)
Continuations (2)
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Number |
Date |
Country |
Parent |
08/323580 |
Oct 1994 |
US |
Child |
09/144695 |
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US |
Parent |
07/803166 |
Dec 1991 |
US |
Child |
08/323580 |
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US |