Integrated circuits having in-situ constraints

Information

  • Patent Grant
  • 10846454
  • Patent Number
    10,846,454
  • Date Filed
    Friday, February 23, 2018
    6 years ago
  • Date Issued
    Tuesday, November 24, 2020
    4 years ago
  • Inventors
    • Qian; Qi-De (Santa Clara, CA, US)
  • Original Assignees
  • Examiners
    • Levin; Naum
    Agents
    • Hoffberg & Associates
    • Hoffberg; Steven M.
Abstract
In accordance with the present method and system for improving integrated circuit layout, a local process modification is calculated from simulated process response variables at a set of control points. Said modification values are incorporated into the layout constraints imposed by design rules and design intent to account for manufacturing friendliness. Solving the updated constraint equation with user specified objective function produces a new layout with increased manufacturability. The new layout may further contain data tags that enable optimal process correction to be performed on selected locations, leading to reduction in data size and mask complexity. Also in accordance with this invention, physical design tools are enhanced to read and process anisotropic design rules.
Description
FIELD OF THE INVENTION

The present invention relates generally to integrated-circuit devices and more particularly to integrated-circuit devices having superior manufacturing yield.


PRIOR ART

In modern processing technology, the manufacturing yield of an integrated circuit depends heavily on its layout construction. For a given manufacturing process, a corresponding set of design rules are applied during chip layout to avoid geometry patterns that can cause chip failure. These design rules guarantee the yield by limiting layout geometry parameters such as minimum spacing, minimal line width, etc.


Existing layout construction systems apply design rules over a wide chip area, and to entire classes of circuits. For this reason, the design rule must cover the worst case in all products. Failure to capture the absolute worst case in all chips would lead to systematic yield failure.


In modern processing technologies such as advanced photolithography, many layout features may interact during chip processing. When the interaction distance increases to greater than a few minimal pitches, the number of interacting features increases sharply. For this reason, the feature dependent interactions are difficult to capture with precise design rules. In practice, one makes global design rule sufficiently relaxed in order to guarantee the yield.


The drawback of this approach is at least two fold: firstly, it clearly wastes chip area, and secondly, finding the worst case feature combination in all chips is a non-trivial task that consumes large engineering resources.


Some emerging processing technologies also prefer one spatial direction to the other. Existing layout generation systems, however, use identical minimal spacing and minimal width rules for both directions. This leads to waste in chip area and under-utilization of processing capability, since the design rules must cover the worst of the two directions.


SUMMARY OF INVENTION

The present invention relates to layout with geometric objects, and more particularly to a system and method for forming layout constraints to account for local and orientation processing dependencies.


The present invention provides a local process modification value to the basic design rule constraint. Local process modification represents an additional safeguard distance beyond the design rule constraint distance. The local process modification value can be calculated from simulated process responses in the region of interest, with a predetermined, often empirical, equation, or from look-up data tables. The original design rule distance plus local process modification effectively creates a new constraint for every unique local situation. With this additional local safeguard, we can reduce the guard band in design rule formulation and improve chip yield by eliminating processing hotspots arising from low probability local feature combinations.


The present invention provides a method that enforces the new local constraints such that simulated local process modification and the original design rule constraint work together to guarantee the chip yield.


For processing technologies with a preferred direction, the present invention constructs two sets of design rule constraint distances for the two orthogonal spatial directions. It constructs layout design systems that can read, store said constraint distances in different memory locations, and apply them according to the orientation of the layout features. By doing so, the layout can fully take advantage of the directional dependence in processing technology.





BRIEF DESCRIPTION OF THE DRAWINGS

The invention is generally shown by way of example in the accompanying drawings in which:



FIG. 1 is a flow and block diagram showing a method and system in accordance with the present invention;



FIG. 2 is a flow and block diagram for enforcing local constraints;



FIG. 3 is a schematic diagram illustrating the calculation of local process modification values;



FIG. 4 illustrates the layout artwork terminology;



FIG. 5 is a block diagram for generating anisotropic layout artwork;



FIG. 6 is a flow diagram for anisotropic layout generation;



FIG. 7A illustrates orientation dependent routing;



FIG. 7B illustrates orientation dependent jog insertion;



FIG. 8 is a block diagram showing a system for implementing the present invention.















Definition List 2










Term
Definition







Width
Distance of interior-facing edge for a single layer



Space
Distance of exterior-facing edge for one or two layers



Overlap
Distance of interior-facing edge for two layers



Enclosure
Distance of inside edge to outside edge when the




polygon of the inside edge is fully inside the polygon




of the outside edge



Extension
Distance of inside edge to outside edge










DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Some preferred embodiments of the present invention will be described in detail with reference to the related drawings of FIGS. 1-8. Additional embodiments, features and/or advantages of the invention will become apparent from the ensuing description or may be learned by the practice of the invention.


The methods and apparatus described here are with respect to integrated circuit manufacturing; however, the techniques described here can be applied to manufacturing or design of any device that require pattern transfer from a polygon database drawing to physical materials using lithographic and/or etch methods. Examples of these include integrated optical devices, microelectromechanical systems (MEMS), gene chips, micromachines, disk drive heads, etc.


The following description includes the best mode presently contemplated for carrying out the invention. This description is not to be taken in a limiting sense, but is made merely for describing the general principles of the invention.


The present invention is directed to methods for improving the manufacturing yield of an IC by optimizing its layout pattern.



FIG. 1 shows a block and flow diagram for the present invention. In block 000, the original design layout and process description are read into the system. Said design layout comprises a plurality of interrelated layout objects, one or more layers, and can be flat or organized in a hierarchical data structure comprising a plurality of masters, cells, and/or array instances. The relative distances between said layout objects are constrained by design rule and design intent.


The process description comprises design rules, simulation models, manufacturing equipment settings, material options, empirical fitting parameter, and look-up data tables that describe the manufacturing behavior.


Block 002 builds initial linear constraints from the input layout, design rules, and circuit requirements. In a preferred embodiment, well-known procedures, such as the shadow propagation method; is applied to accomplish this task. A description of the procedure can be found in Jurgen Doenhardt and Thomas Lengauer, “Algorithm Aspects of One-Dimensional Layout Compaction”, IEEE Trans. Computer-Aided design. Vol. CAD-6 no. 5 September 1987. pp. 863.


Said initial linear constraint equation takes the form AX=d_old, where A is a matrix of coefficients; X is a vector of positional variables comprising location of the polygon edges; and d_old is a column vector of constraint distances. Constraint distances comprise design rule constraint distances and circuit specific design intent. An example of a constraint distance is the minimal line width.


A constraint equation is expressed in the form xi−xj>dij_old, where xi and xj are locations of two interacting polygon edges in the layout, and dij_old is the constraint distance between these two edges. The elements of matrix A in this equation are 1 and −1. The vector d_old is a collection of dij_old. The value of dij_old is given by the design rule or by circuit requirements. For example, dij_old can be the minimal width of a wire as required by process capabilities. In another case, it dij_old is the width of a particular wire that is designed to carry a large amount of current where it would be wider than the minimal wire width required by the process alone.


Block 004 generates local process modification values. A local process modification to the design rule constraint distance transforms the global design rule constraints into location specific constraints. Individual evaluation and enforcement of the required safety margin at each critical location enhances the manufacturing yield of a chip. In a preferred embodiment, we calculate local process modification at constrained locations from manufacturing response variables. Details of a preferred embodiment will be discussed in FIG. 3.


Block 006 combines local process modification value delta_dij, with the original constraint distances generated in block 002. A linear constraint equation now takes the form xi−xj>dij_new, where dij_new=dij_old+delta_dij is defined as the local constraint distance. A collection of dij_new values forms the local constraint distance vector, d_new. The system of equations for local constraint takes the form A*X=d_new.


Local constraint distance is a general addition to the constraint distance specified by design rules. Therefore, it can be applied to any physical design system where design rule constrained layout construction and optimization is performed.


Block 008 enforces the local constraint distance to the original layout. Preferred embodiments will be illustrated in FIG. 2.


Block 010 updates the coordinate variables in the layout according to the solution of the enforcement procedure 008.


The present invention modifies a design rule constraint distance, which is global in nature, with a local process modifier to account for specific local conditions. This mechanism adds extra safeguard to the design rule methodology. If a design rule clean layout contains locations with poor process latitude, the local process modifier delta_dij will be larger than that in other places. By enforcing the new local constraint, dij_new=dij_old+delta_dij, the layout is modified to have better process latitude.


For example if two minimally spaced lines tend to bridge due to a particular surrounding condition, the local process modifier will increase the minimal spacing between them, causing the layout edges to moved further apart during enforcement.



FIG. 2 shows a preferred embodiment for local constraint enforcement. At the start of the procedure, we have a system of equations for local constraint, AX=d_new. The edge locations in the original layout are likely to violate some of the local constraint distances.


Block 100 constructs an objective function Ct*X, where Ct is a row vector of coefficients for achieving various optimization objectives, and X is the position variable in the layout. In a preferred embodiment, the objective function together with the linear constraint system removes the new violations introduced by local constraint with minimal perturbation. For example, we can use the procedure described by Heng et. al. entitled “A VLSI Artwork Legalization Technique Based on a New Criteria of Minimum Layout Perturbation”, ACM/IEEE Intl. Symp. on Physical Design, pp. 116-121, 1997.


By receiving appropriate Ct values, we construct objective functions for wire length minimization, legalization, compaction, and other measurable metrics of layout.


Block 102 solves the linear system problem of minimizing Ct*X, subject to A*X=d_new. This is a standard form for a linear programming problem. We use commercial software packages such as CPLEX from ILOG can be used for this purpose.


Block 104 updates the layout with the solution X of the linear system.


In q one-dimensional method, the flow is performed one direction at a time, first x(y) then y(x).


In a two-dimension method, the flow is performed for horizontal and vertical position variables simultaneously.


In another preferred embodiment, the violations to local constraints are removed one at a time using heuristic procedures. For example, the single error removal procedure described by Zhan Chen, in “Layout and Logic Techniques for Yield and Reliability Enhancement”, Ph.D. Thesis, University of Massachusetts Amherst, 1998, can be applied to fix isolated violations. It is particularly useful when processing hotspots are few.


By enforcing new local constraints, we improve the local process latitude. It is a function similar to optimal process correction (OPC). By enforcing local constraints, we can eliminate the need to perform OPC in large portion of layout. In a preferred embodiment, we tag locations where local constraint enforcement fails or the circuit tolerance is especially tight so that a specially designed OPC system can pick up these location tags and perform localized OPC.


Our experiments show that only small percentages of locations need OPC after local constraint enforcement. Therefore, the localized OPC procedure will greatly reduce the mask complexity compared to the standard, blanket OPC procedure performed today.


According to the present invention, we calculate the local process modification value at a set of control points that best captures the interaction between the edges. In a preferred embodiment, a simulation based hotspot detection procedure is first applied to the layout. After that, control points are placed on the offending polygon edges. Hotspot detection comprises simulating the image of the layout and measuring the difference between said image and the design intent. In a preferred embodiment, the difference is represented by the edge placement error (EPE). A processing hotspot is a location where EPE is larger than a predetermined threshold. As an example, the control points can be the same points on the layout where EPE is evaluated.


In another preferred embodiment, we select the control points by inspecting the interaction among the edges. FIG. 3 shows two layout rectangles 300 and 302, which can be on the same layer or on different layers in the layout. The constraint relation xi−xj>dij_old applies to these two edges.


The interaction region between the right edge of 300 at xi (301) and the left edge of 302 at xj (303) is defined by the shadow of 301 on 303, as marked by the band between the two dashed lines, 304. We find the shadow region by placing a hypothetical flashlight to the left of 301 and measure its shadow on 303, which is similar to the procedure used in constraint generation in block 004 of FIG. 1.


After finding the interaction region, we implement a predetermined sampling plan for laying down the control points. In FIG. 3, we place a pair of control points 306 and 308, one on each edge, at the same height, in the middle of the shadow band. We can also use other spatial sampling plans involving a plurality of pairs of points.


After deciding the sampling points (e.g. 306 and 308 in FIG. 3), we simulate various processing response variables at these points. In the photolithography step of IC fabrication, said response variables represent local printability and comprise edge placement error, light intensity during photolithography exposure and its derivatives, contrast, and mask error enhancement factor. A predetermined empirical function is used to calculate the local process modification value from said processing response variables.


For the example in FIG. 3, we select a linear function of edge placement error at point 306 and 308 to calculate local process modification. Edge placement error, (314/316 for the left/right edge) is defined as the perpendicular distance from intended edge location (xi/xj for the left/right edge) to the simulated edge location as predicted by process simulation, (310/312 for the left/right edge).


Once the edge placement errors are calculated for the two interacting edges, the local process modification value is expressed as w1*EPE_i+w2*EPE_j, where EPE_i 314 and EPE_j 316 are the edge placement errors at 306 and 308 respectively, and w1 and w2 are user specified constants. Local constraint for edges 301 and 303 can now be expressed as dij_new=dij_old+w1*EPE_i+w2*EPE_j.


Variations in functional forms for local process modification can be constructed and additional process variables can be used in order to cover the specific needs of a particular application.


In another preferred embodiment, the local process modification value is obtained from a predetermined look-up data table. The key to the look-up data table is a set of geometry combinations that appear frequently in the layout, such as the two rectangle case show in FIG. 3. The application uses pattern recognition capability to identify the pattern key and search the look-up table in order to obtain appropriate local process modification value. This embodiment is advantageous when good simulation accuracy cannot be obtained, and the interaction is limited to a short range.


The local process modifications discussed so far are microscopic correction to the design rule constraints. In modern processing technology, there are also systematic corrections to design rules on a larger scale. For example, in immersion lithography, one can utilize the polarization property of the imaging light to achieve higher image resolution in a preferred direction. Another example is the crystal orientation dependence in device performance. According to the present invention, we formulated two sets of design rule distances, one set for horizontal dimensions and another set for vertical dimensions in order to achieve best chip performance. We construct physical layout tools to utilize these two separate constraint distances. The optimal layout for these technologies are anisotropic in that the horizontal and vertical directions obey different constraints for minimal space, line width, overlap, enclosure, and extension rules. The exact definition of these geometry terms are listed in Definition List 1 and illustrated in FIG. 4.


Design rules that have different constraint distances for horizontal and vertical directions are defined as anisotropic design rules. The layout that satisfy anisotropic design rules are defined as anisotropic layout.


Design rules that have the same constraint distances for horizontal and vertical directions are defined as isotropic design rules, or simply design rules. The layouts that satisfy isotropic design rules are defined as isotropics layout.


The present invention comprises layout systems that are capable of generating and optimizing layout artwork for a direction dependent processing technology.


In accordance with the current invention, we design a set of simple test patterns with parameterized critical dimensions. The parameter values are selected such that they vary from the value when said pattern can be successfully fabricated to a value at which the fabrication clearly fails. We extract the design rules by finding and recording the parameter value at which the test pattern can be successfully fabricated under all allowable processing conditions, i.e., the process window.


In a preferred embodiment, two separate sets of test patterns are fabricated. One set comprises geometries oriented along the vertical direction. The other set comprises geometries oriented along the horizontal direction. For example, one set has line and space gratings running along the vertical direction; the other set has the same running along horizontal direction. The variable parameters in this example are line width and space width. Extracted design rules from this set of test patterns represent distance constraints for line width and space width in horizontal and vertical directions.


For a direction dependent processing technology, the present invention extracts two distinctive sets of constraint parameters to form an anisotropic design rule set.



FIG. 5 shows a flow diagram for generating optimal layout for a direction dependent processing technology. Starting with design database that contains the circuit netlist and performance target (500), we apply a set of software tools (501) to create a polygonal layout for fabrication. These tools comprise layout editors, placement and routing tools, layout compaction tools, and standard cell generators etc. The tool collection (501) uses anisotropic design rules (502) to restrict the relative positioning of polygon edges based on the orientation of the edge.


In a preferred embodiment, FIG. 6 shows a flow diagram for generating layout for an anisotropic image system. The steps performed in FIG. 6 uses a subset of the tool collection 501.


During floor planning (602) and placement (603), a preferred orientation of the image system is used to optimize the shape, position and orientation of the circuit building blocks. More circuit element can be accommodated in the direction with higher resolution, while the direction with lower resolution has lower line-to-line parasitic capacitance and lower resistance. In routing modules 604 and 605, wiring direction dependent design rules from the memory are used for identifying obstacles, setting wire width and spacing, and estimating resistance and capacitance.



FIG. 7A shows a basic operation during wire routing. A wire is constructed by the routing algorithm to connect two points, A and B. In a preferred embodiment, starting from point A, while the wire is running horizontally (700), the application fetches the minimal width of the horizontal wire from the memory and applies it to limit the current wire segment. After turning 90 degrees (701), the wire now is running along the vertical direction, the application fetches the minimal width of the vertical wire from a different memory location and applies it to limit the minimal line width.


The wire is also kept at safe distances away from obstacles 703 and 704 using directional dependent minimal spacing rules. In a preferred embodiment, the layout generation system compares the separation 705 between vertical line segments 701 and 704, with the minimal spacing rule between vertical lines and reports error when this horizontal constraint is violated. Said system compares the separation 706 between horizontal line segments 702 and 703, with the minimal spacing rule between horizontal lines and reports error when this vertical constraint is violated. In prior art physical design systems, the minimal values for 705 and 706 are the same and equal to the minimal space rule, which is kept at the same memory location in the design system.



FIG. 7B illustrates the procedure for wire jog insertion. In layout systems, interconnect needs to be converted from paths that have no width information to actual layout wires. The preferred width is specified in the technology file. In a preferred embodiment, two numbers representing preferred wire width in vertical and in horizontal direction are read from different input fields. During path to wire conversion, the main wire portion 708 uses width and spacing width for the vertical wires, while jog portion 707 uses width and spacing rules for horizontal wires.


In another preferred embodiment, design rule verification and compaction programs in FIG. 6 are constructed to accept and process anisotropic design rules. For example, the corner to corner constraint on a layout layer may now be expressed as sqrt(d_h*d_h+d_v*d_v), where d_h and d_v ate horizontal and vertical constraint distances respectively. In contrast, in an isotropic layout system, said corner constraint is sqrt(2)*d0, where d0 is the isotropic constraint distance.


Referring to FIG. 8, a block/flow diagram is shown for a system 800 of the present invention. System 800 includes a processor 802 that accesses memory device 804. Memory device 804 stores an application software package 806 for implementing the present invention. A user interfaces with the processor 802 through an input device 808 which may include a keyboard, a mouse, a touch screen monitor, a voice recognition system or other known input devices. A display 810 is also included to display results, prompts, user inputs, graphics, etc.


While the present invention has been described in detail with regards to the preferred embodiments, it should be appreciated that various modifications and variations may be made in the present invention without departing from the scope or spirit of the invention. In this regard, it is important to note that practicing the invention is not limited to the applications described hereinabove. Many other applications and/or alterations may be utilized if such other applications and/or alterations do not depart from the intended purpose of the present invention.


It should further be appreciated by a person skilled in the art that features illustrated or described as part of one embodiment can be used in another embodiment to provide yet another embodiment such that the features are not limited to the specific embodiments described above. Thus, it is intended that the present invention cover such modifications, embodiments and variations as long as such modifications, embodiments and variations come within the scope of the appended claims and their equivalents.

Claims
  • 1. A method of producing a design layout for an integrated circuit for fabrication by an anisotropic image system, comprising: providing a set of global design rules comprising at least global rules limiting relative distances of layout objects;generating, by an automated design layout system, an original design layout for the integrated circuit according to the global rules limiting relative distances of layout objects;automatically determining occurrences of at least one pattern within the original design layout;defining layout direction and pattern-specific design rules for each respective automatically determined occurrence of the at least one pattern within the original design layout;automatically modifying the original design layout according to at least the defined layout direction and pattern-specific design rules, to produce a modified design layout which differs from the original design layout, to cause at least one new violation of the global rules limiting relative distances of layout objects, further comprising optimizing the modified design layout according to at least one optimization objective; andoutputting the modified design layout for fabrication by the anisotropic image system.
  • 2. The method according to claim 1, further comprising manufacturing the integrated circuit by an integrated circuit fabrication system comprising the anisotropic image system based on the modified design layout.
  • 3. The method according to claim 1, wherein the automatically determined occurrences represent regions of the original design layout with poor process latitude in an integrated circuit fabrication system comprising the anisotropic image system.
  • 4. The method according to claim 1, further comprising performing process correction on a subset of the modified design layout, the subset being selected based at least on results of application of the defined layout direction and pattern-specific design rules.
  • 5. The method according to claim 1, wherein occurrences of the at least one pattern are automatically determined anisotropically.
  • 6. The method according to claim 1, wherein the original design layout comprises a first plurality of routing wires running in a first direction, and a second plurality of routing wires running in a second direction, the second direction being orthogonal to the first direction, the routing wires of the first plurality of routing wires having first width values, the routing wires of the second plurality of routing wires having second width values, the first width values being different from the second width values.
  • 7. The method according to claim 6, wherein the first plurality of routing wires and the second plurality of routing wires reside in the same layer of the modified design layout.
  • 8. The method according to claim 6, wherein the step of automatically modifying the original design layout according to at least the defined layout direction and pattern-specific design rules comprise locally adjusting at least a width value of at least one of the first plurality of routing wires in a layout direction sensitive manner.
  • 9. The method according to claim 6, wherein the step of automatically modifying the original design layout according to at least the defined layout direction and pattern-specific design rules comprise locally adjusting at least a spacing value between a pair of the first plurality of routing wires.
  • 10. The method according to claim 1, wherein the original design layout comprises interrelated layout objects organized in a hierarchical structure including master instances, cell instances, and array instances.
  • 11. The method according to claim 1, wherein the at least one pattern within the original design layout comprises interrelated layout objects on one layer of the integrated circuit.
  • 12. The method according to claim 11, wherein the at least one pattern within the original design layout comprises a combination of geometry of adjacent layout objects within the original design layout.
  • 13. The method according to claim 11, wherein the step of automatically determining occurrences of the at least one pattern within the original design layout comprises comparing combinations of geometry in the original design layout with a set of known geometry combinations.
  • 14. The method according to claim 13, wherein the step of comparing combinations of geometry in the original design layout with a set of known geometry combinations comprises determining respective pattern keys for respective combinations of geometry in the original design layout, and the step of defining layout direction and pattern-specific design rules for each respective automatically determined pattern comprises performing lookups from a lookup table based on the respective pattern keys.
  • 15. The method according to claim 13, wherein the step of automatically determining occurrences of the at least one pattern within the original design layout comprises performing automated pattern recognition.
  • 16. The method according to claim 15, wherein the step of automated pattern recognition comprises recognizing combinations of geometry in the original design layout.
  • 17. The method according to claim 15, wherein the step of automated pattern recognition further comprises associating a respective pattern key with a respective pattern in the original design layout, and the step of defining layout direction and pattern-specific design rules for each respective automatically determined pattern comprises retrieving the defining layout direction and pattern-specific design rules for each respective automatically determined occurrence of the pattern based on the pattern key in dependence on a layout direction.
  • 18. The method according to claim 15, wherein the modified design layout meets the set of global design rules.
  • 19. The method according to claim 1, wherein the original design layout includes at least one feature that violates a layout direction and pattern-specific design rule, and the violation of the layout direction and pattern-specific design rule is absent from the modified design layout.
  • 20. The method according to claim 19, wherein: the global design rules comprise a minimum safeguard distance limit; andthe step of automatically modifying the original design layout according to at least the defined layout direction and pattern-specific design rules comprises generating an additional safeguard distance, and adding the additional safeguard distance to the minimum safeguard distance limit.
  • 21. The method according to claim 1, wherein a dimension of a plurality of first directionally oriented layout objects of a first type of the modified design layout is different from same dimension of a plurality of second directionally oriented layout objects of the first type, the first directionally oriented layout objects being oriented along a first direction, the second directionally oriented layout objects being oriented along a second direction, the second direction being orthogonal to the first direction.
  • 22. The method according to claim 21, wherein the plurality of the first directionally oriented layout objects and the plurality of second directionally oriented layout objects reside in the same layer of the modified design layout.
  • 23. The method according to claim 22, wherein the plurality of the first directionally oriented layout objects and the plurality of second directionally oriented layout objects are wires.
  • 24. The method according to claim 1, wherein the original design layout comprises a first plurality of routing wires running in a first direction, and a second plurality of routing wires running in a second direction, the second direction being orthogonal to the first direction, the routing wires of the first plurality of routing wires having first width values, the routing wires of the second plurality of routing wires having second width values, the first width values being different from the second width values.
  • 25. The method according to claim 1, wherein the set of global design rules are adapted for a particular manufacturing process, wherein the occurrences of at least one pattern within the original design layout represent regions corresponding to local process latitudes for the particular manufacturing process, and the step of modifying the original design layout is performed to provide at least some of corresponding regions of the modified design layout with improved local process latitudes over the local process latitudes of the original design layout.
  • 26. The method according to claim 1, further comprising further modifying the modified design layout selectively in at least one location of the modified design layout which limits a process latitude with respect to a photolithography process, dependent on a circuit tolerance at the location.
  • 27. The method according to claim 1, wherein said step of automatically modifying the original design layout comprises modifying the original design layout by optimization of an optimization objective in a presence of constraints imposed by at least the layout direction and pattern-specific design rules.
  • 28. The method according to claim 1, wherein the at least one optimization objective comprises wire length minimization, legalization, and compaction of the modified design layout.
  • 29. A method of producing a design layout for an integrated circuit for an anisotropic image system, comprising the steps of: defining an original design layout based on original design rules, wherein the original design layout comprises layout objects having relative distances therebetween, said original design rules further comprising original global limits on the relative distance between the original layout objects;automatically determining occurrences of at least one pattern anisotropically;generating a modified design layout by an automated design layout system based at least on the original design layout, the original design rules, and a set of regionally-applied layout direction and pattern-specific limits on the relative distance between the original layout objects of the original design layout, which are looked up from a predetermined look-up table using layout patterns as look-up keys, and causing at least one new violation of the global rules limiting relative distances of layout objects;optimizing the modified design layout according to at least one optimization objective; andoutputting the optimized modified design layout for the anisotropic image system.
  • 30. The method according to claim 29, further comprising manufacturing the integrated circuit by an integrated circuit fabrication system comprising the anisotropic image system based on the modified design layout.
  • 31. A method of producing a design layout for an integrated circuit, comprising: providing a set of anisotropic global design rules comprising at least global anisotropic layout direction sensitive rules anisotropically limiting relative distances of layout objects in an anisotropic image system;generating, by an automated design layout system, an original design layout for the integrated circuit according to the global anisotropic layout direction sensitive rules anisotropically limiting relative distances of layout objects in the anisotropic image system;automatically determining occurrences of at least one pattern within the original design layout;defining layout direction and pattern-specific design rules for each respective automatically determined occurrence of the at least one pattern within the original design layout;automatically modifying the original design layout according to at least the defined layout direction and pattern-specific design rules, to produce a modified design layout which differs from the original design layout; andoutputting the modified design layout for the anisotropic image system.
  • 32. The method according to claim 31, further comprising manufacturing the integrated circuit by an anisotropic integrated circuit fabrication system comprising the anisotropic image system based on the modified design layout.
  • 33. The method according to claim 32, wherein the automatically determined occurrences represent regions of the original design layout with poor process latitude in the anisotropic integrated circuit fabrication system comprising the anisotropic image system.
CROSS REFERENCE RELATED APPLICATIONS

This application claims priority to, and is a continuation of U.S. patent application Ser. No. 15/715,097, filed Sep. 25, 2017, now Abandoned, which is a continuation of U.S. patent application Ser. No. 15/251,961, filed Aug. 30, 2016, now U.S. Pat. No. 9,798,853, issued Oct. 24, 2017, which is a continuation of U.S. patent application Ser. No. 13/886,577, filed May 3, 2013, now U.S. Pat. No. 9,697,317, issued Jul. 4, 2017, which is a continuation of U.S. patent application Ser. No. 13/547,444, filed on Jul. 12, 2012, now U.S. Pat. No. 8,464,187, issued Jun. 11, 2013, which is a continuation of U.S. patent application Ser. No. 12/181,483 filed on Jul. 29, 2008, now U.S. Pat. No. 8,266,557, issued Sep. 11, 2012, which is a continuation-in-part of U.S. patent application Ser. No. 10/907,814, filed on Apr. 15, 2005, now U.S. Pat. No. 7,448,012, issued Nov. 4, 2008, which claims priority to U.S. Provisional Patent Application Ser. No. 60/603,758 filed on Aug. 23, 2004, and U.S. Provisional Patent Application Ser. No. 60/564,082, filed on Apr. 21, 2004, each of which is expressly incorporated herein in their entirety.

US Referenced Citations (1137)
Number Name Date Kind
T938005 Colton et al. Sep 1975 I4
3983479 Lee et al. Sep 1976 A
4346695 Kitzmiller Aug 1982 A
4346723 Geiger Aug 1982 A
4346817 Karcher Aug 1982 A
4441207 Lougheed et al. Apr 1984 A
4584653 Chih et al. Apr 1986 A
4742471 Yoffa et al. May 1988 A
4754105 Doty et al. Jun 1988 A
4761607 Shiragasawa et al. Aug 1988 A
4803636 Nishiyama et al. Feb 1989 A
4823276 Hiwatashi Apr 1989 A
4827428 Dunlop et al. May 1989 A
4852015 Doyle, Jr. Jul 1989 A
4882690 Shinsha et al. Nov 1989 A
4882999 Azukizawa et al. Nov 1989 A
4965739 Ng Oct 1990 A
4965863 Cray Oct 1990 A
5018074 Griffith et al. May 1991 A
5021847 Eitan et al. Jun 1991 A
5046109 Fujimori et al. Sep 1991 A
5075753 Kozono Dec 1991 A
5079717 Miwa Jan 1992 A
5086477 Yu et al. Feb 1992 A
5097422 Corbin, II et al. Mar 1992 A
5119169 Kozono et al. Jun 1992 A
5124273 Minami Jun 1992 A
5197116 Katoh et al. Mar 1993 A
5210701 Hana et al. May 1993 A
5212653 Tanaka May 1993 A
5218551 Agrawal et al. Jun 1993 A
5237514 Curtin Aug 1993 A
5241185 Meiri et al. Aug 1993 A
5247455 Yoshikawa Sep 1993 A
5247456 Ohe et al. Sep 1993 A
5258920 Haller et al. Nov 1993 A
5267177 Sato et al. Nov 1993 A
5281558 Bamji et al. Jan 1994 A
5282140 Tazawa et al. Jan 1994 A
5295082 Chang et al. Mar 1994 A
5303161 Burns et al. Apr 1994 A
5303471 Liberatoscioli Apr 1994 A
5308722 Nistler May 1994 A
5309371 Shikata et al. May 1994 A
5311443 Crain et al. May 1994 A
5326659 Liu et al. Jul 1994 A
5331572 Takahashi Jul 1994 A
5345444 Cloonan et al. Sep 1994 A
5353235 Do et al. Oct 1994 A
5369596 Tokumaru Nov 1994 A
5376483 Rolfson Dec 1994 A
5379348 Watanabe et al. Jan 1995 A
5381343 Bamji et al. Jan 1995 A
5384710 Lam et al. Jan 1995 A
5388054 Tokumaru Feb 1995 A
5402358 Smith et al. Mar 1995 A
5416717 Miyama et al. May 1995 A
5416722 Edwards May 1995 A
5422317 Hua et al. Jun 1995 A
5438524 Komoda Aug 1995 A
5441834 Takekuma et al. Aug 1995 A
5442569 Osano Aug 1995 A
5442714 Iguchi Aug 1995 A
5459673 Carmean et al. Oct 1995 A
5481474 Lee Jan 1996 A
5481624 Kamon Jan 1996 A
5490268 Matsunaga Feb 1996 A
5493509 Matsumoto et al. Feb 1996 A
5493510 Shikata Feb 1996 A
5519628 Russell et al. May 1996 A
5526517 Jones et al. Jun 1996 A
5533148 Sayah et al. Jul 1996 A
5535134 Cohn et al. Jul 1996 A
5541025 Oi et al. Jul 1996 A
5541914 Krishnamoorthy et al. Jul 1996 A
5559718 Baisuck et al. Sep 1996 A
5559997 Tsuchida et al. Sep 1996 A
5568396 Bamji et al. Oct 1996 A
5572598 Wihl et al. Nov 1996 A
5572710 Asano et al. Nov 1996 A
5579237 Shibuya Nov 1996 A
5581474 Bamji et al. Dec 1996 A
5604680 Bamji et al. Feb 1997 A
5610831 Matsumoto Mar 1997 A
5612893 Hao et al. Mar 1997 A
5619419 DHaeseleer et al. Apr 1997 A
5625567 Mankin et al. Apr 1997 A
5629859 Agarwala et al. May 1997 A
5631842 Habra et al. May 1997 A
5633807 Fishburn et al. May 1997 A
5636129 Her Jun 1997 A
5636132 Kamdar Jun 1997 A
5654695 Olnowich et al. Aug 1997 A
5663891 Bamji et al. Sep 1997 A
5663892 Hayashi et al. Sep 1997 A
5680588 Gortych et al. Oct 1997 A
5682321 Ding et al. Oct 1997 A
5686208 Le et al. Nov 1997 A
5689433 Edwards Nov 1997 A
5691913 Tsuchida et al. Nov 1997 A
5694328 Hayashi et al. Dec 1997 A
5695896 Pierrat Dec 1997 A
5701255 Fukui Dec 1997 A
5723235 Tsudaka et al. Mar 1998 A
5725974 Kawahira Mar 1998 A
5726903 Kerzman et al. Mar 1998 A
5729466 Bamji Mar 1998 A
5745374 Matsumoto Apr 1998 A
5751554 Williams et al. May 1998 A
5761075 Oi et al. Jun 1998 A
5764530 Yokomaku Jun 1998 A
5768146 Jassowski Jun 1998 A
5774133 Neave et al. Jun 1998 A
5795688 Burdorf et al. Aug 1998 A
5798541 Jassowski Aug 1998 A
5798936 Cheng Aug 1998 A
5801954 Le et al. Sep 1998 A
5801959 Ding et al. Sep 1998 A
5805860 Parham Sep 1998 A
5808898 Kajitani et al. Sep 1998 A
5812162 Silverbrook Sep 1998 A
5812412 Moriizumi et al. Sep 1998 A
5818729 Wang et al. Oct 1998 A
5825385 Silverbrook Oct 1998 A
5825660 Cagan et al. Oct 1998 A
5825661 Drumm Oct 1998 A
5841452 Silverbrook Nov 1998 A
5841898 Liguori Nov 1998 A
5845233 Fishburn Dec 1998 A
5850241 Silverbrook Dec 1998 A
5856925 Maeda et al. Jan 1999 A
5880967 Jyu et al. Mar 1999 A
5887155 Laidig Mar 1999 A
5889681 Suda Mar 1999 A
5889686 Mimotogi et al. Mar 1999 A
5896300 Raghavan et al. Apr 1999 A
5903031 Yamada et al. May 1999 A
5903461 Rostoker et al. May 1999 A
5905517 Silverbrook May 1999 A
5923569 Kumashiro et al. Jul 1999 A
5926397 Yamanouchi Jul 1999 A
5930499 Chen et al. Jul 1999 A
5933566 Kishi et al. Aug 1999 A
5936868 Hall Aug 1999 A
5953517 Yin et al. Sep 1999 A
5959871 Pierzchala et al. Sep 1999 A
5963455 Scepanovic et al. Oct 1999 A
5965306 Mansfield et al. Oct 1999 A
5970238 Shibata et al. Oct 1999 A
5974244 Hayashi et al. Oct 1999 A
5974245 Li et al. Oct 1999 A
5984510 Guruswamy et al. Nov 1999 A
5987240 Kay Nov 1999 A
5990691 Joerg et al. Nov 1999 A
5995734 Saika Nov 1999 A
5998068 Matsuoka Dec 1999 A
6006024 Guruswamy et al. Dec 1999 A
6009250 Ho et al. Dec 1999 A
6009251 Ho et al. Dec 1999 A
6009252 Lipton Dec 1999 A
6011911 Ho et al. Jan 2000 A
6014506 Hossain et al. Jan 2000 A
6016357 Neary et al. Jan 2000 A
6019457 Silverbrook Feb 2000 A
6026223 Scepanovic et al. Feb 2000 A
6031980 Oota Feb 2000 A
6035108 Kikuchi Mar 2000 A
6045710 Silverbrook Apr 2000 A
6066179 Allan May 2000 A
6077308 Carter et al. Jun 2000 A
6077310 Yamamoto et al. Jun 2000 A
6078738 Garza et al. Jun 2000 A
6080201 Hojat et al. Jun 2000 A
6080204 Mendel Jun 2000 A
6083275 Heng et al. Jul 2000 A
6086630 Williams et al. Jul 2000 A
6086631 Chaudhary et al. Jul 2000 A
6091072 Dick et al. Jul 2000 A
6091723 Even Jul 2000 A
6091845 Pierrat et al. Jul 2000 A
6091892 Xue et al. Jul 2000 A
6099583 Nag Aug 2000 A
6110222 Minami et al. Aug 2000 A
6127071 Lu Oct 2000 A
6130383 Lamourelle Oct 2000 A
6154873 Takahashi Nov 2000 A
6155725 Scepanovic et al. Dec 2000 A
6171731 Medvedeva et al. Jan 2001 B1
6178360 Pierrat et al. Jan 2001 B1
6189132 Heng et al. Feb 2001 B1
6205571 Camporese Mar 2001 B1
6208907 Durham et al. Mar 2001 B1
6209123 Maziasz et al. Mar 2001 B1
6223332 Scepanovic et al. Apr 2001 B1
6225025 Hoshino May 2001 B1
6230304 Groeneveld et al. May 2001 B1
6237128 Folberth et al. May 2001 B1
6237133 Suzuki May 2001 B1
6249597 Tsudaka Jun 2001 B1
6249902 Igusa et al. Jun 2001 B1
6249904 Cobb Jun 2001 B1
6261728 Lin Jul 2001 B1
6269277 Hershenson et al. Jul 2001 B1
6269280 Mlyanlshl et al. Jul 2001 B1
6272236 Pierrat et al. Aug 2001 B1
6272392 Capodieci Aug 2001 B1
6275604 Miyajima et al. Aug 2001 B1
6275971 Levy et al. Aug 2001 B1
6282693 Naylor et al. Aug 2001 B1
6282694 Cheng et al. Aug 2001 B1
6282696 Garza et al. Aug 2001 B1
6286126 Raghavan et al. Sep 2001 B1
6286128 Pileggi et al. Sep 2001 B1
6292929 Scepanovic et al. Sep 2001 B2
6301686 Kikuchi et al. Oct 2001 B1
6301692 Kumashiro et al. Oct 2001 B1
6301693 Naylor et al. Oct 2001 B1
6308143 Segawa Oct 2001 B1
6311315 Tamaki Oct 2001 B1
6317866 Tamura Nov 2001 B1
6321366 Tseng et al. Nov 2001 B1
6324673 Luo et al. Nov 2001 B1
6335930 Lee Jan 2002 B1
6336205 Kurokawa et al. Jan 2002 B1
6339836 Eisenhofer et al. Jan 2002 B1
6340543 Nagamura et al. Jan 2002 B1
6343370 Taoka et al. Jan 2002 B1
6345210 Yu Feb 2002 B1
6349401 Tamaki Feb 2002 B2
6351841 Tickle Feb 2002 B1
6357036 Eka et al. Mar 2002 B1
6360356 Eng Mar 2002 B1
6370673 Hill Apr 2002 B1
6378114 Shenoy et al. Apr 2002 B1
6381731 Grodd Apr 2002 B1
6385758 Kikuchi et al. May 2002 B1
6388736 Smith et al. May 2002 B1
6393604 Yamada et al. May 2002 B1
6418553 Yamada et al. Jul 2002 B1
6425112 Bula et al. Jul 2002 B1
6425117 Pasch et al. Jul 2002 B1
6427225 Kitada et al. Jul 2002 B1
6436590 Wang et al. Aug 2002 B2
6442743 Sarrafzadeh et al. Aug 2002 B1
6446239 Markosian et al. Sep 2002 B1
6449761 Greidinger et al. Sep 2002 B1
6457158 Inoue Sep 2002 B1
6465138 Stanton Oct 2002 B1
6469540 Nakaya Oct 2002 B2
6470489 Chang et al. Oct 2002 B1
6472107 Chan Oct 2002 B1
6473882 Mukai Oct 2002 B2
6480995 Schmidt et al. Nov 2002 B1
6496435 Kato Dec 2002 B2
6505333 Tanaka Jan 2003 B1
6507931 Kotani et al. Jan 2003 B2
6516450 Hill et al. Feb 2003 B1
6516458 Fukui Feb 2003 B1
6524752 Pierrat Feb 2003 B1
6526555 Teig et al. Feb 2003 B1
6536012 Mizuno Mar 2003 B1
6536023 Mohan et al. Mar 2003 B1
6539533 Brown, III et al. Mar 2003 B1
6543042 Kato Apr 2003 B2
6546540 Igarashi et al. Apr 2003 B1
6548417 Dao et al. Apr 2003 B2
6550047 Becker Apr 2003 B1
6553338 Buch et al. Apr 2003 B1
6553554 Dahl et al. Apr 2003 B1
6553560 Ma et al. Apr 2003 B2
6557153 Dahl et al. Apr 2003 B1
6564363 Dahl et al. May 2003 B1
6564364 Dahl et al. May 2003 B1
6569583 Cho et al. May 2003 B2
6574779 Allen et al. Jun 2003 B2
6576147 Mukai Jun 2003 B2
6577994 Tsukuda Jun 2003 B1
6578179 Shirotori et al. Jun 2003 B2
6578190 Ferguson et al. Jun 2003 B2
6584599 Fujii Jun 2003 B2
6584610 Wu et al. Jun 2003 B1
6587992 Marple Jul 2003 B2
6594811 Katz Jul 2003 B2
6608920 Su et al. Aug 2003 B1
6625800 Qian et al. Sep 2003 B1
6643616 Granik et al. Nov 2003 B1
6651235 Dai et al. Nov 2003 B2
6658640 Weed Dec 2003 B2
6662348 Naylor et al. Dec 2003 B1
6665854 Fujiwara et al. Dec 2003 B2
6665856 Pierrat et al. Dec 2003 B1
6668366 Liao et al. Dec 2003 B2
6670080 Sugita et al. Dec 2003 B2
6671859 Naylor et al. Dec 2003 B1
6671867 Alpert et al. Dec 2003 B2
6674678 Kato Jan 2004 B2
6691297 Misaka et al. Feb 2004 B1
6701289 Garnett et al. Mar 2004 B1
6709901 Yamazaki et al. Mar 2004 B1
6727565 Itoh Apr 2004 B2
6728943 Kanamoto Apr 2004 B2
6733929 Pierrat May 2004 B2
6735742 Hatsch et al. May 2004 B2
6735749 Li et al. May 2004 B2
6745372 Cote et al. Jun 2004 B2
6749971 Lukanc et al. Jun 2004 B2
6751519 Satya et al. Jun 2004 B1
6756242 Regan Jun 2004 B1
6757878 Srinivasan et al. Jun 2004 B2
6757886 Liebmann et al. Jun 2004 B2
6759698 Tanaka Jul 2004 B2
6763508 Igarashi et al. Jul 2004 B2
6766500 Donelly et al. Jul 2004 B1
6774899 Ryall et al. Aug 2004 B1
6777147 Fonseca et al. Aug 2004 B1
6785879 Pierrat Aug 2004 B2
6787271 Cote et al. Sep 2004 B2
6787459 Moniwa et al. Sep 2004 B2
6789246 Mohan et al. Sep 2004 B1
6791128 Yamauchi Sep 2004 B1
6792586 Li Sep 2004 B2
6794677 Tamaki et al. Sep 2004 B2
6802050 Shen et al. Oct 2004 B2
6804808 Li et al. Oct 2004 B2
6806499 Yamazaki et al. Oct 2004 B2
6811935 Pierrat Nov 2004 B2
6813756 Igarashi et al. Nov 2004 B2
6816998 Li Nov 2004 B2
6829380 Choo et al. Dec 2004 B1
6832360 Li Dec 2004 B2
6832364 Heng et al. Dec 2004 B2
6834380 Khazei Dec 2004 B2
6839470 Ikeda Jan 2005 B2
6846596 Wu Jan 2005 B2
6852471 Pierrat et al. Feb 2005 B2
6861183 Barber Mar 2005 B2
6862726 Futatsuya et al. Mar 2005 B2
6866971 Pierrat Mar 2005 B2
6871332 Li et al. Mar 2005 B2
6871338 Yamauchi Mar 2005 B2
6874133 Gopalakrishnan et al. Mar 2005 B2
6877145 Boylan et al. Apr 2005 B2
6880134 Drennan Apr 2005 B2
6882012 Yamazaki et al. Apr 2005 B2
6883149 Li et al. Apr 2005 B2
6883153 Jiang et al. Apr 2005 B2
6892363 Li May 2005 B2
6892368 Li et al. May 2005 B2
6901576 Liebmann et al. May 2005 B2
6904571 Schmidt et al. Jun 2005 B1
6909330 Colleran et al. Jun 2005 B2
6912704 Teig Jun 2005 B1
6925202 Karklin et al. Aug 2005 B2
6928015 Ooishi Aug 2005 B2
6928634 Granik et al. Aug 2005 B2
6931613 Kauth et al. Aug 2005 B2
6938231 Yoshida et al. Aug 2005 B2
6948145 Brown, III et al. Sep 2005 B2
6954911 Pierrat Oct 2005 B2
6954921 Hassibi et al. Oct 2005 B2
6957400 Liu et al. Oct 2005 B2
6957411 Teig et al. Oct 2005 B1
6961545 Tehrani et al. Nov 2005 B2
6961916 Sarrafzadeh et al. Nov 2005 B2
6961920 Zach Nov 2005 B2
6970759 Desplats et al. Nov 2005 B2
6971080 Grodd Nov 2005 B2
6978438 Capodieci Dec 2005 B1
6983440 Nequist Jan 2006 B1
6986109 Allen Jan 2006 B2
6989687 Or-Bach Jan 2006 B2
6992290 Watanabe et al. Jan 2006 B2
6993741 Liebmann et al. Jan 2006 B2
6996790 Chang Feb 2006 B2
7003758 Ye et al. Feb 2006 B2
7007258 Li Feb 2006 B2
7010770 Liang et al. Mar 2006 B2
7013439 Robles et al. Mar 2006 B2
7013445 Teig et al. Mar 2006 B1
7018788 Lin Mar 2006 B2
7024655 Cobb Apr 2006 B2
7028272 Mandel et al. Apr 2006 B2
7028285 Cote et al. Apr 2006 B2
7036103 Miller et al. Apr 2006 B2
7039881 Regan May 2006 B2
7043071 Qian et al. May 2006 B2
7058913 Siegel et al. Jun 2006 B1
7065727 Hershenson et al. Jun 2006 B2
7065729 Chapman Jun 2006 B1
7069534 Sahouria et al. Jun 2006 B2
7073144 Alpert et al. Jul 2006 B2
7076746 Hamlin et al. Jul 2006 B2
7080349 Babcock et al. Jul 2006 B1
7083879 Pierrat et al. Aug 2006 B2
7089519 Teig Aug 2006 B1
7093205 Heydler et al. Aug 2006 B2
7096449 Teig et al. Aug 2006 B1
7098530 Jansman et al. Aug 2006 B2
7100129 Salowe et al. Aug 2006 B1
7100134 Wu et al. Aug 2006 B2
7103864 Isobe Sep 2006 B2
7103870 Misaka et al. Sep 2006 B2
7109730 Slupsky Sep 2006 B2
7111276 Kamat et al. Sep 2006 B2
7115343 Gordon et al. Oct 2006 B2
7117456 Gray et al. Oct 2006 B2
7117468 Teig et al. Oct 2006 B1
7120887 Bonges, III et al. Oct 2006 B2
7124385 McGuinness et al. Oct 2006 B2
7124386 Smith et al. Oct 2006 B2
7128270 Silverbrook et al. Oct 2006 B2
7132203 Pierrat Nov 2006 B2
7134102 Poechmueller Nov 2006 B2
7134111 Nakamoto Nov 2006 B2
7147976 Liebmann et al. Dec 2006 B2
7175942 Liebmann et al. Feb 2007 B2
7178128 Liu et al. Feb 2007 B2
7184015 Morita Feb 2007 B2
7187796 Phan et al. Mar 2007 B1
7188322 Cohn et al. Mar 2007 B2
7194725 Lukanc Mar 2007 B1
7200827 Ku et al. Apr 2007 B1
7200835 Zhang et al. Apr 2007 B2
7205191 Kobayashi Apr 2007 B2
7216320 Chang et al. May 2007 B2
7225422 Bucki et al. May 2007 B2
7228523 Kobayashi Jun 2007 B2
7242591 Imamura et al. Jul 2007 B2
7246342 Hsu et al. Jul 2007 B2
7257783 Allen et al. Aug 2007 B2
7266800 Sezginer Sep 2007 B2
7266801 Kotani et al. Sep 2007 B2
7269803 Khakzadi et al. Sep 2007 B2
7269809 Shastri et al. Sep 2007 B2
7276714 Platzgummer et al. Oct 2007 B2
7284231 Lucas et al. Oct 2007 B2
7294056 Lowell et al. Nov 2007 B2
7296252 Alpert et al. Nov 2007 B2
7299459 Boyd et al. Nov 2007 B1
7302651 Allen et al. Nov 2007 B2
7303842 Watson et al. Dec 2007 B2
7304544 Colleran et al. Dec 2007 B2
7308660 Nozuyama Dec 2007 B2
7310786 Yang et al. Dec 2007 B2
7313014 Ooishi Dec 2007 B2
7313508 Croffie et al. Dec 2007 B2
7313769 Lukanc et al. Dec 2007 B1
7315994 Aller et al. Jan 2008 B2
7337379 Hiraide Feb 2008 B2
7337426 Kotani et al. Feb 2008 B2
7345888 Imamura et al. Mar 2008 B2
7346865 Su et al. Mar 2008 B2
7350174 Srinivasan et al. Mar 2008 B2
7351969 Watanabe et al. Apr 2008 B2
7356795 Yamauchi Apr 2008 B2
7360191 Chang et al. Apr 2008 B2
7363601 Heng et al. Apr 2008 B2
7368738 Platzgummer May 2008 B2
7370303 Einspenner et al. May 2008 B2
7370403 Hsu et al. May 2008 B1
7380227 Li May 2008 B1
7383527 Enomoto et al. Jun 2008 B2
7385988 Asati Jun 2008 B2
7401312 Krauch et al. Jul 2008 B2
7404165 Misaka et al. Jul 2008 B2
7404168 Miller et al. Jul 2008 B2
7421676 Tan et al. Sep 2008 B2
7437691 Tang et al. Oct 2008 B2
7440449 Carson et al. Oct 2008 B2
7446352 Becker et al. Nov 2008 B2
7448012 Qian Nov 2008 B1
7454721 Hibbeler et al. Nov 2008 B2
7464356 Alpert et al. Dec 2008 B2
7467369 Alpert et al. Dec 2008 B2
7470489 Liebmann et al. Dec 2008 B2
7484197 Allen et al. Jan 2009 B2
7484199 Alpert et al. Jan 2009 B2
7493581 Siegel et al. Feb 2009 B2
7506295 Teig Mar 2009 B1
7512927 Gallatin et al. Mar 2009 B2
7515186 Moini et al. Apr 2009 B2
7516433 Pucci et al. Apr 2009 B1
7523429 Kroyan Apr 2009 B2
7530038 Gristede et al. May 2009 B2
7533359 Scheffer et al. May 2009 B2
7543252 McCullen Jun 2009 B2
7549137 Alpert et al. Jun 2009 B2
7567279 Yourlo et al. Jul 2009 B2
7569838 Watanabe et al. Aug 2009 B2
7577049 Kornachuk Aug 2009 B1
7579214 Yamazaki et al. Aug 2009 B2
7581197 Arunachalam Aug 2009 B2
7586800 Kornachuk Sep 2009 B1
7587696 Nakamoto Sep 2009 B2
7588868 Zach et al. Sep 2009 B2
7590968 Becker et al. Sep 2009 B1
7596420 Kiers et al. Sep 2009 B2
7605940 Silverbrook et al. Oct 2009 B2
7610565 Allen et al. Oct 2009 B2
7624364 Albrecht et al. Nov 2009 B2
7624366 Alpert et al. Nov 2009 B2
7653884 Furnish et al. Jan 2010 B2
7669160 Furnish et al. Feb 2010 B2
7669161 Lin Feb 2010 B2
7669170 Cohn et al. Feb 2010 B2
7673260 Chen et al. Mar 2010 B2
7695871 van Adrichem Apr 2010 B2
7698665 Abrams et al. Apr 2010 B2
7698676 Qian Apr 2010 B1
7703059 Murray et al. Apr 2010 B2
7712064 Scheffer et al. May 2010 B2
7712068 Ren et al. May 2010 B2
7716614 Kauth et al. May 2010 B2
7716624 Sahouria et al. May 2010 B2
7721235 Nequist et al. May 2010 B1
7735042 Gray et al. Jun 2010 B2
7739642 Albrecht Jun 2010 B2
7743354 Albrecht et al. Jun 2010 B2
7752588 Bose Jul 2010 B2
7760259 Moini et al. Jul 2010 B2
7761818 Gray et al. Jul 2010 B2
7761821 Allen et al. Jul 2010 B2
7763534 Smayling et al. Jul 2010 B2
7765498 Ho et al. Jul 2010 B1
7774732 KleinOsowski et al. Aug 2010 B2
7784015 Pltts Aug 2010 B2
7788627 Abrams et al. Aug 2010 B2
7793253 Abrams et al. Sep 2010 B2
7814447 Scheffer et al. Oct 2010 B2
7814451 Furnish et al. Oct 2010 B2
7842975 Becker et al. Nov 2010 B2
7853915 Saxena et al. Dec 2010 B2
7879538 Wang Feb 2011 B2
7882463 Heng et al. Feb 2011 B2
7888705 Becker et al. Feb 2011 B2
7895562 Gray et al. Feb 2011 B2
7904862 Nequist Mar 2011 B2
7906801 Becker et al. Mar 2011 B2
7908573 Lin Mar 2011 B2
7908578 Becker et al. Mar 2011 B2
7910958 Becker et al. Mar 2011 B2
7910959 Becker et al. Mar 2011 B2
7913210 Albrecht et al. Mar 2011 B2
7917879 Becker et al. Mar 2011 B2
7917885 Becker Mar 2011 B2
RE42294 Kotani et al. Apr 2011 E
RE42302 Kotani et al. Apr 2011 E
7921392 Furnish et al. Apr 2011 B2
7921393 Furnish et al. Apr 2011 B2
7923757 Becker et al. Apr 2011 B2
7924042 Isobe Apr 2011 B2
7932544 Becker et al. Apr 2011 B2
7932545 Becker et al. Apr 2011 B2
7934188 Alpert et al. Apr 2011 B2
7937682 Arunachalam et al. May 2011 B2
7939443 Fox et al. May 2011 B2
7941768 Wei May 2011 B1
7943436 McElvain May 2011 B2
7943966 Becker et al. May 2011 B2
7943967 Becker et al. May 2011 B2
7948012 Becker et al. May 2011 B2
7948013 Becker et al. May 2011 B2
7952119 Becker et al. May 2011 B2
7956421 Becker Jun 2011 B2
7962879 Tang et al. Jun 2011 B2
7979829 Smayling Jul 2011 B2
7984410 Chen et al. Jul 2011 B2
7989847 Becker et al. Aug 2011 B2
7989848 Becker et al. Aug 2011 B2
7990450 Silverbrook et al. Aug 2011 B2
7992122 Burstein et al. Aug 2011 B1
7994545 Smayling et al. Aug 2011 B2
7995183 Yamazaki et al. Aug 2011 B2
8022441 Becker et al. Sep 2011 B2
8023020 Moini et al. Sep 2011 B2
8028252 Cecil Sep 2011 B2
8030689 Becker et al. Oct 2011 B2
8035133 Becker et al. Oct 2011 B2
8037441 Ringe et al. Oct 2011 B2
8058671 Becker et al. Nov 2011 B2
8058691 Becker Nov 2011 B2
8069429 Miller et al. Nov 2011 B2
8072003 Becker et al. Dec 2011 B2
8088679 Becker et al. Jan 2012 B2
8088680 Becker et al. Jan 2012 B2
8088681 Becker et al. Jan 2012 B2
8088682 Becker et al. Jan 2012 B2
8089098 Becker et al. Jan 2012 B2
8089099 Becker et al. Jan 2012 B2
8089100 Becker et al. Jan 2012 B2
8089101 Becker et al. Jan 2012 B2
8089102 Becker et al. Jan 2012 B2
8089103 Becker et al. Jan 2012 B2
8089104 Becker et al. Jan 2012 B2
8091059 Alpert et al. Jan 2012 B2
8095894 Misaka et al. Jan 2012 B2
8099693 Pedenon et al. Jan 2012 B2
8099702 Hou et al. Jan 2012 B2
8101975 Becker et al. Jan 2012 B2
8103983 Agarwal et al. Jan 2012 B2
8108819 Alpert et al. Jan 2012 B2
8110854 Becker et al. Feb 2012 B2
8112732 Alpert et al. Feb 2012 B2
8129750 Becker et al. Mar 2012 B2
8129751 Becker et al. Mar 2012 B2
8129752 Becker et al. Mar 2012 B2
8129753 Becker et al. Mar 2012 B2
8129754 Becker et al. Mar 2012 B2
8129755 Becker et al. Mar 2012 B2
8129756 Becker et al. Mar 2012 B2
8129757 Becker et al. Mar 2012 B2
8129819 Becker et al. Mar 2012 B2
8131943 Colglazier et al. Mar 2012 B2
8134183 Becker et al. Mar 2012 B2
8134184 Becker et al. Mar 2012 B2
8134185 Becker et al. Mar 2012 B2
8134186 Becker et al. Mar 2012 B2
8136168 Cheng et al. Mar 2012 B2
8138525 Becker et al. Mar 2012 B2
8163190 Moon Apr 2012 B2
8176445 Qian May 2012 B1
8198656 Becker et al. Jun 2012 B2
8207053 Becker et al. Jun 2012 B2
8214778 Quandt et al. Jul 2012 B2
8217428 Becker et al. Jul 2012 B2
8225239 Reed et al. Jul 2012 B2
8225248 Chen et al. Jul 2012 B2
8225261 Hong et al. Jul 2012 B2
8234612 Goodman et al. Jul 2012 B2
8239792 Arunachalam Aug 2012 B2
8245171 Lepere et al. Aug 2012 B2
8245180 Smayling et al. Aug 2012 B2
8247846 Becker Aug 2012 B2
8253172 Becker et al. Aug 2012 B2
8253173 Becker et al. Aug 2012 B2
RE43659 Kotani et al. Sep 2012 E
8200570 Walker et al. Sep 2012 B2
8258547 Becker et al. Sep 2012 B2
8258548 Becker et al. Sep 2012 B2
8258549 Becker et al. Sep 2012 B2
8258550 Becker et al. Sep 2012 B2
8258551 Becker et al. Sep 2012 B2
8258552 Becker et al. Sep 2012 B2
8258581 Becker Sep 2012 B2
8261217 Kobayashi Sep 2012 B2
8261223 Hsu et al. Sep 2012 B2
8264007 Becker et al. Sep 2012 B2
8264008 Becker et al. Sep 2012 B2
8264009 Becker et al. Sep 2012 B2
8264044 Becker Sep 2012 B2
8264049 Becker Sep 2012 B2
8266557 Qian Sep 2012 B1
8266566 Hopkins et al. Sep 2012 B2
8271920 Cho et al. Sep 2012 B2
8274099 Becker Sep 2012 B2
8283701 Becker et al. Oct 2012 B2
8286107 Smayling et al. Oct 2012 B2
8296706 Gray et al. Oct 2012 B2
8302062 Gray et al. Oct 2012 B2
8307316 Albrecht et al. Nov 2012 B2
8316335 Barowski et al. Nov 2012 B2
8332793 Bose Dec 2012 B2
8347257 Alpert et al. Jan 2013 B2
8352887 Dai et al. Jan 2013 B2
8356268 Becker et al. Jan 2013 B2
8359556 Abou Ghaida et al. Jan 2013 B1
8365107 Tyminski et al. Jan 2013 B2
8365120 Alpert et al. Jan 2013 B2
8370782 Alpert et al. Feb 2013 B2
8395224 Becker et al. Mar 2013 B2
8405162 Becker et al. Mar 2013 B2
8405163 Becker et al. Mar 2013 B2
8418108 Alpert et al. Apr 2013 B2
8423940 Daellenbach et al. Apr 2013 B2
8423941 Heng et al. Apr 2013 B2
8434035 Arunachalam Apr 2013 B2
8436400 Becker et al. May 2013 B2
8448097 Dai et al. May 2013 B2
8448102 Kornachuk et al. May 2013 B2
8453093 Kim et al. May 2013 B2
8453094 Kornachuk et al. May 2013 B2
8453103 Bendicksen et al. May 2013 B2
8464187 Qian Jun 2013 B1
8464189 Allen et al. Jun 2013 B2
8471391 Fox et al. Jun 2013 B2
8473874 Sharma et al. Jun 2013 B1
8473881 Fang et al. Jun 2013 B1
8490034 Torunoglu et al. Jul 2013 B1
8495534 Alpert et al. Jul 2013 B2
8495548 Agarwal et al. Jul 2013 B2
8510690 Kauth et al. Aug 2013 B2
8527927 Walker et al. Sep 2013 B2
8533650 Arsintescu et al. Sep 2013 B2
8541879 Smayling Sep 2013 B2
8549448 Vuillod et al. Oct 2013 B2
8549455 Quandt et al. Oct 2013 B2
8552508 Becker et al. Oct 2013 B2
8552509 Becker et al. Oct 2013 B2
8558322 Becker et al. Oct 2013 B2
8564071 Becker et al. Oct 2013 B2
8569841 Becker et al. Oct 2013 B2
8575706 Becker et al. Nov 2013 B2
8581303 Becker et al. Nov 2013 B2
8581304 Becker et al. Nov 2013 B2
8587034 Becker et al. Nov 2013 B2
8589845 Albrecht et al. Nov 2013 B2
8592872 Becker et al. Nov 2013 B2
8631361 Feng Jan 2014 B2
8653857 Becker Feb 2014 B2
8658542 Smayling et al. Feb 2014 B2
8661375 Wang Feb 2014 B2
8661391 Viswanath et al. Feb 2014 B1
8661392 Quandt et al. Feb 2014 B2
8667441 Alpert et al. Mar 2014 B2
8667443 Smayling et al. Mar 2014 B2
8669594 Becker et al. Mar 2014 B2
8669595 Becker et al. Mar 2014 B2
8677297 Chase et al. Mar 2014 B2
8680626 Smayling et al. Mar 2014 B2
8880583 Becker et al. Mar 2014 B2
8701071 Kornachuk et al. Apr 2014 B2
8726215 Lee et al. May 2014 B2
8729606 Becker et al. May 2014 B2
8729643 Becker et al. May 2014 B2
8735944 Becker et al. May 2014 B2
8735995 Becker et al. May 2014 B2
8742462 Becker et al. Jun 2014 B2
8742463 Becker et al. Jun 2014 B2
8751986 Arunachalam et al. Jun 2014 B2
8756551 Becker et al. Jun 2014 B2
8759882 Becker et al. Jun 2014 B2
8759985 Fox et al. Jun 2014 B2
8772839 Becker et al. Jul 2014 B2
8775977 Hsu et al. Jul 2014 B2
8782585 Guthaus Jul 2014 B2
8785978 Becker et al. Jul 2014 B2
8785979 Becker et al. Jul 2014 B2
8793636 Alpert et al. Jul 2014 B2
8816402 Becker et al. Aug 2014 B2
8823062 Becker et al. Sep 2014 B2
8835989 Becker et al. Sep 2014 B2
8836045 Becker et al. Sep 2014 B2
8839175 Smayling et al. Sep 2014 B2
8843867 Chase et al. Sep 2014 B2
8847329 Becker et al. Sep 2014 B2
8847331 Becker et al. Sep 2014 B2
8800197 Becker et al. Oct 2014 B2
8853793 Becker et al. Oct 2014 B2
8853794 Becker et al. Oct 2014 B2
8863051 Kauth et al. Oct 2014 B2
8863063 Becker et al. Oct 2014 B2
8872283 Becker et al. Oct 2014 B2
8875082 Sircar et al. Oct 2014 B1
8881089 Alpert et al. Nov 2014 B1
8893061 Rieger et al. Nov 2014 B2
8921896 Becker et al. Dec 2014 B2
8921897 Becker et al. Dec 2014 B2
8934066 Yamazaki et al. Jan 2015 B2
8935643 Salem et al. Jan 2015 B2
8938696 Torunoglu et al. Jan 2015 B1
8946781 Becker et al. Feb 2015 B2
8949755 Helvey Feb 2015 B2
8951918 Smayllng Feb 2015 B2
8952425 Becker et al. Feb 2015 B2
8954912 Alpert et al. Feb 2015 B2
8966424 Quandt et al. Feb 2015 B2
8966427 Guthaus et al. Feb 2015 B2
8984464 Mihal et al. Mar 2015 B1
8984467 Arunachalam Mar 2015 B2
9009641 Becker et al. Apr 2015 B2
9035359 Becker et al. May 2015 B2
9043741 Batterywala et al. May 2015 B2
9071446 Kreft Jun 2015 B2
9081931 Becker et al. Jul 2015 B2
9117050 Becker et al. Aug 2015 B2
9122832 Reed et al. Sep 2015 B2
9152754 Knapp Oct 2015 B2
9158878 Sakanushi Oct 2015 B2
9159627 Smayling et al. Oct 2015 B2
9202779 Kornachuk et al. Dec 2015 B2
9208279 Becker et al. Dec 2015 B2
9213792 Becker et al. Dec 2015 B2
9230910 Becker Jan 2016 B2
9240413 Smayling et al. Jan 2016 B2
9245081 Becker et al. Jan 2016 B2
9251306 Kim et al. Feb 2016 B2
9269702 Quandt et al. Feb 2016 B2
9281371 Smayling Mar 2016 B2
9286416 Tyminski et al. Mar 2016 B2
9292643 Sahouria et al. Mar 2016 B2
9311442 Banerjee et al. Apr 2016 B2
9336344 Smayling et al. May 2016 B2
9361417 Arunachalam et al. Jun 2016 B2
9390215 Fox et al. Jul 2016 B2
9424387 Quandt et al. Aug 2016 B2
9425145 Becker Aug 2016 B2
9425272 Becker et al. Aug 2016 B2
9425273 Becker et al. Aug 2016 B2
9430601 Arunachalam Aug 2016 B2
9443947 Becker et al. Sep 2016 B2
9460258 Peart et al. Oct 2016 B2
9461826 Kreft Oct 2016 B2
9489414 Bruestle Nov 2016 B2
9519745 Yuan et al. Dec 2016 B2
9530734 Kornachuk et al. Dec 2016 B2
9530795 Quandt et al. Dec 2016 B2
9536899 Becker et al. Jan 2017 B2
9563733 Becker Feb 2017 B2
9589091 Smayling et al. Mar 2017 B2
9595091 Kaizerman et al. Mar 2017 B2
9595515 Becker et al. Mar 2017 B2
9600599 Bruestle Mar 2017 B2
9633987 Smayling et al. Apr 2017 B2
9652573 Odiz et al. May 2017 B1
9652578 Mihal et al. May 2017 B2
9659132 Kerre et al. May 2017 B2
9673825 Becker Jun 2017 B2
9690890 Odlz et al. Jun 2017 B1
9697314 Odiz et al. Jul 2017 B1
9697317 Qian Jul 2017 B1
9704845 Smayling et al. Jul 2017 B2
9711495 Becker Jul 2017 B2
9720649 Sahl et al. Aug 2017 B2
9740811 Chen et al. Aug 2017 B2
9740812 Nance et al. Aug 2017 B2
9741719 Smayling et al. Aug 2017 B2
9753363 Tyminski et al. Sep 2017 B2
9754066 Moteki Sep 2017 B2
9754878 Kornachuk et al. Sep 2017 B2
9779200 Fox et al. Oct 2017 B2
9792396 Arunachalam Oct 2017 B2
9798853 Qian Oct 2017 B2
9817857 Seth et al. Nov 2017 B2
9818747 Smayling Nov 2017 B2
9830416 Wu et al. Nov 2017 B2
9858658 Kaizerman et al. Jan 2018 B2
9859277 Smayling et al. Jan 2018 B2
9871056 Becker et al. Jan 2018 B2
9875326 Alpert et al. Jan 2018 B2
9881114 Nlfong et al. Jan 2018 B2
9893898 Kreft Feb 2018 B2
9898567 Salodkar et al. Feb 2018 B2
9902038 Fukushima et al. Feb 2018 B2
9904755 Bhattacharya et al. Feb 2018 B2
9905576 Becker et al. Feb 2018 B2
9910950 Quandt et al. Mar 2018 B2
9916411 Nifong et al. Mar 2018 B2
9917056 Smayling et al. Mar 2018 B2
10216890 Qian Feb 2019 B2
20010003843 Scepanovic et al. Jun 2001 A1
20010010090 Boyle et al. Jul 2001 A1
20010010092 Kato Jul 2001 A1
20010015464 Tamaki Aug 2001 A1
20010032978 Hiromi Oct 2001 A1
20010038127 Yamazaki et al. Nov 2001 A1
20020002697 Kotani et al. Jan 2002 A1
20020019729 Chang et al. Feb 2002 A1
20020035461 Chang et al. Mar 2002 A1
20020059553 Eng May 2002 A1
20020061652 Tamaki et al. May 2002 A1
20020063569 Kanamoto May 2002 A1
20020088940 Watanabe et al. Jul 2002 A1
20020100004 Pierrat et al. Jul 2002 A1
20020133801 Granik et al. Sep 2002 A1
20020138816 Sarrafzadeh et al. Sep 2002 A1
20020152453 Rittman Oct 2002 A1
20020155363 Cote et al. Oct 2002 A1
20030022071 Sugita et al. Jan 2003 A1
20030026472 Abe Feb 2003 A1
20030044059 Chang et al. Mar 2003 A1
20030061583 Malhotra Mar 2003 A1
20030064685 Kim Apr 2003 A1
20030079194 Igarashi et al. Apr 2003 A1
20030084418 Regan May 2003 A1
20030088847 Chang et al. May 2003 A1
20030088849 Yamauchi May 2003 A1
20030093766 Liebmann et al. May 2003 A1
20030101430 Liebmann et al. May 2003 A1
20030117946 Fontana et al. Jun 2003 A1
20030126571 Srinivasan et al. Jul 2003 A1
20030136977 Tanaka Jul 2003 A1
20030160236 Yamazaki et al. Aug 2003 A1
20030177467 Ohnuma et al. Sep 2003 A1
20030196183 Alpert et al. Oct 2003 A1
20030200524 Liebmann et al. Oct 2003 A1
20030219154 Medvedeva et al. Nov 2003 A1
20030229838 Hiraide Dec 2003 A1
20040003368 Hsu et al. Jan 2004 A1
20040015808 Pang et al. Jan 2004 A1
20040025138 Futatsuya et al. Feb 2004 A1
20040049760 Garza et al. Mar 2004 A1
20040063000 Maurer et al. Apr 2004 A1
20040068712 Heng et al. Apr 2004 A1
20040073880 Yoshida et al. Apr 2004 A1
20040078768 McGuinness et al. Apr 2004 A1
20040078770 Miller et al. Apr 2004 A1
20040088071 Kouno et al. May 2004 A1
20040096752 Liebmann et al. May 2004 A1
20040107408 Sano et al. Jun 2004 A1
20040107410 Misaka et al. Jun 2004 A1
20040123264 Tsai et al. Jun 2004 A1
20040128118 Croffie et al. Jul 2004 A1
20040165054 Saquib et al. Aug 2004 A1
20040170905 Liebmann et al. Sep 2004 A1
20040175635 Liebmann et al. Sep 2004 A1
20040191650 Pierrat Sep 2004 A1
20040205681 Nozuyama Oct 2004 A1
20040225986 Lin et al. Nov 2004 A1
20040230922 Allen et al. Nov 2004 A1
20040230933 Weaver, Jr. et al. Nov 2004 A1
20040232445 Nakamoto Nov 2004 A1
20040237061 Kahng et al. Nov 2004 A1
20040243963 Srinivasan et al. Dec 2004 A1
20050001271 Kobayashi Jan 2005 A1
20050008942 Cheng et al. Jan 2005 A1
20050014074 Liebmann et al. Jan 2005 A1
20050015699 Or-Bach Jan 2005 A1
20050034093 Yamauchi Feb 2005 A1
20050041166 Yamazaki et al. Feb 2005 A1
20050046717 Lapstun et al. Mar 2005 A1
20050066300 Zach Mar 2005 A1
20050091014 Gallatin et al. Apr 2005 A1
20050096888 Ismail May 2005 A1
20050100802 Callan et al. May 2005 A1
20050108662 Morfey et al. May 2005 A1
20050121672 Yamazaki et al. Jun 2005 A1
20050125763 Lin et al. Jun 2005 A1
20050132319 Krauch et al. Jun 2005 A1
20050134820 Mulder et al. Jun 2005 A1
20050134866 Kyoh et al. Jun 2005 A1
20050136582 Aller et al. Jun 2005 A1
20050155001 Kinoshita et al. Jul 2005 A1
20050160390 Bonges, III et al. Jul 2005 A1
20050160393 Kobayashi Jul 2005 A1
20050172253 Osanai Aug 2005 A1
20050175906 Liebmann et al. Aug 2005 A1
20050188338 Kroyan et al. Aug 2005 A1
20050234684 Sawicki et al. Oct 2005 A1
20050235237 Alpert et al. Oct 2005 A1
20050235245 Kotani et al. Oct 2005 A1
20050240895 Smith et al. Oct 2005 A1
20050242302 Platzgummer et al. Nov 2005 A1
20050242303 Platzgummer Nov 2005 A1
20050246674 Scheffer Nov 2005 A1
20050246675 Scheffer Nov 2005 A1
20050254106 Silverbrook et al. Nov 2005 A9
20050286113 Miles Dec 2005 A1
20050289490 Shastri et al. Dec 2005 A1
20050289500 Misaka et al. Dec 2005 A1
20060002216 Ooishi Jan 2006 A1
20060026541 Melvin et al. Feb 2006 A1
20060033049 Kotani et al. Feb 2006 A1
20060033975 Miles Feb 2006 A1
20060040188 Liebmann et al. Feb 2006 A1
20060051680 Tritchkov et al. Mar 2006 A1
20060057475 Liebmann et al. Mar 2006 A1
20060064653 Zhang et al. Mar 2006 A1
20060066326 Slupsky Mar 2006 A1
20060080628 Enomoto et al. Apr 2006 A1
20060080630 Lin Apr 2006 A1
20060085768 Heng et al. Apr 2006 A1
20060090151 Miller et al. Apr 2006 A1
20060101356 Allen et al. May 2006 A1
20060101357 Allen et al. May 2006 A1
20060103002 Ahn et al. May 2006 A1
20060107248 Liebmann et al. May 2006 A1
20060110025 Ho et al. May 2006 A1
20060110837 Gupta et al. May 2006 A1
20060118719 Watanabe et al. Jun 2006 A1
20060131271 Kiermasz et al. Jun 2006 A1
20060131736 Jansman et al. Jun 2006 A1
20060154496 Imamura et al. Jul 2006 A1
20060168551 Mukuno Jul 2006 A1
20060190889 Cong et al. Aug 2006 A1
20060206847 Ogawa Sep 2006 A1
20060242619 Pang et al. Oct 2006 A1
20060245636 Kitamura et al. Nov 2006 A1
20060270068 Lo Nov 2006 A1
20060271894 Arunachalam Nov 2006 A1
20060277520 Gennari Dec 2006 A1
20060281221 Mehrotra et al. Dec 2006 A1
20060290769 Liu et al. Dec 2006 A1
20070006113 Hu et al. Jan 2007 A1
20070044061 Nakamoto Feb 2007 A1
20070083847 Mansfield et al. Apr 2007 A1
20070143724 Alpert et al. Jun 2007 A1
20070150846 Furnish et al. Jun 2007 A1
20070157153 Croffie et al. Jul 2007 A1
20070168898 Gupta et al. Jul 2007 A1
20070195511 Imamura et al. Aug 2007 A1
20070198961 Allen et al. Aug 2007 A1
20070204249 Hibbeler Aug 2007 A1
20070204252 Furnish et al. Aug 2007 A1
20070204256 Brunet et al. Aug 2007 A1
20070220477 Sagisaka et al. Sep 2007 A1
20070240088 Tang et al. Oct 2007 A1
20070245281 Riepe et al. Oct 2007 A1
20070245283 Allen et al. Oct 2007 A1
20070246776 Moroz et al. Oct 2007 A1
20070256046 Pikus et al. Nov 2007 A1
20070271539 Murray et al. Nov 2007 A1
20070271543 Alpert et al. Nov 2007 A1
20070277129 Allen et al. Nov 2007 A1
20080028352 Birch et al. Jan 2008 A1
20080052660 Shim et al. Feb 2008 A1
20080067552 Yamauchi Mar 2008 A1
20080074913 Yamauchi Mar 2008 A1
20080084726 Yamauchi Apr 2008 A1
20080120588 Becker May 2008 A1
20080127017 Alpert et al. May 2008 A1
20080127027 Gallatin et al. May 2008 A1
20080127029 Graur et al. May 2008 A1
20080134128 Blatchford et al. Jun 2008 A1
20080141211 Bruce et al. Jun 2008 A1
20080148210 Heng et al. Jun 2008 A1
20080163486 Imamura et al. Jul 2008 A1
20080173814 Watanabe et al. Jul 2008 A1
20080184183 Kobayashi Jul 2008 A1
20080216025 Furnish et al. Sep 2008 A1
20080216038 Bose Sep 2008 A1
20080216039 Furnish et al. Sep 2008 A1
20080216040 Furnish et al. Sep 2008 A1
20080238967 Busch et al. Oct 2008 A1
20080241709 Nakagawa et al. Oct 2008 A1
20080244494 McCullen Oct 2008 A1
20080250375 Miller et al. Oct 2008 A1
20080276208 Albrecht et al. Nov 2008 A1
20080276209 Albrecht et al. Nov 2008 A1
20080276210 Albrecht et al. Nov 2008 A1
20080276212 Albrecht Nov 2008 A1
20080313577 Tang et al. Dec 2008 A1
20090003684 Alqudah et al. Jan 2009 A1
20090004573 Aton Jan 2009 A1
20090013299 Alpert et al. Jan 2009 A1
20090014811 Becker et al. Jan 2009 A1
20090019419 Misaka et al. Jan 2009 A1
20090031259 Gray et al. Jan 2009 A1
20090031269 Chen et al. Jan 2009 A1
20090032967 Becker et al. Feb 2009 A1
20090037850 Gray et al. Feb 2009 A1
20090037851 Gray et al. Feb 2009 A1
20090037866 Graur et al. Feb 2009 A1
20090064073 Alpert et al. Mar 2009 A1
20090064074 Alpert et al. Mar 2009 A1
20090064080 Alpert et al. Mar 2009 A1
20090077525 Haffner Mar 2009 A1
20090083689 Ringe et al. Mar 2009 A1
20090087619 Aton et al. Apr 2009 A1
20090106715 Pikus Apr 2009 A1
20090108360 Smayling et al. Apr 2009 A1
20090128788 Aton May 2009 A1
20090132992 Zhou et al. May 2009 A1
20090150837 Mergenthaler et al. Jun 2009 A1
20090158223 Gray et al. Jun 2009 A1
20090160986 Moini et al. Jun 2009 A1
20090199142 Arunachalam et al. Aug 2009 A1
20090222672 Clarke et al. Sep 2009 A1
20090241085 De La Cruz et al. Sep 2009 A1
20090254874 Bose Oct 2009 A1
20090261493 Winget et al. Oct 2009 A1
20090271752 Alpert et al. Oct 2009 A1
20090296055 Ye et al. Dec 2009 A1
20090307642 Lai et al. Dec 2009 A1
20090313594 Arunachalam Dec 2009 A1
20090319977 Saxena et al. Dec 2009 A1
20100002111 Yourlo et al. Jan 2010 A1
20100014784 Silverbrook et al. Jan 2010 A1
20100031214 Hou et al. Feb 2010 A1
20100037200 Ghan et al. Feb 2010 A1
20100115477 Albrecht et al. May 2010 A1
20100125822 Lepere et al. May 2010 A1
20100153892 Gray et al. Jun 2010 A1
20100185997 Allen et al. Jul 2010 A1
20100252889 Becker Oct 2010 A1
20100257499 Alpert et al. Oct 2010 A1
20100262944 Alpert et al. Oct 2010 A1
20100302426 Moini et al. Dec 2010 A1
20100306719 Smayling Dec 2010 A1
20100333049 Agarwal et al. Dec 2010 A1
20110037498 Konda Feb 2011 A1
20110047519 Torres Robles et al. Feb 2011 A1
20110119642 Agarwal et al. May 2011 A1
20110138342 Agarwal Jun 2011 A1
20110167397 Huckabay et al. Jul 2011 A1
20110191731 Walker et al. Aug 2011 A1
20110191738 Walker et al. Aug 2011 A1
20110202897 Hsu et al. Aug 2011 A1
20110209106 Cheng et al. Aug 2011 A1
20110252389 Albrecht et al. Oct 2011 A1
20110320992 Alpert et al. Dec 2011 A1
20120012851 Yamazaki et al. Jan 2012 A1
20120036488 Arunachalam et al. Feb 2012 A1
20120054699 Cho et al. Mar 2012 A1
20120054707 Goodman et al. Mar 2012 A1
20120066654 Hopkins et al. Mar 2012 A1
20120124539 Alpert et al. May 2012 A1
20120144358 Alpert et al. Jun 2012 A1
20120151429 Barowski et al. Jun 2012 A1
20120198394 Pikus et al. Aug 2012 A1
20120266124 Alpert et al. Oct 2012 A1
20120269190 Konda Oct 2012 A1
20120284682 Arunachalam Nov 2012 A1
20120324409 Alpert et al. Dec 2012 A1
20130007674 Abou Ghaida et al. Jan 2013 A1
20130042217 Heng et al. Feb 2013 A1
20130047127 Arunachalam Feb 2013 A1
20130047130 Daellenbach et al. Feb 2013 A1
20130086543 Agarwal et al. Apr 2013 A1
20130097573 Kim et al. Apr 2013 A1
20130105805 Yamazaki et al. May 2013 A1
20130205272 Kim et al. Aug 2013 A1
20130279790 Kaizerman et al. Oct 2013 A1
20140149957 Alpert et al. May 2014 A1
20140331196 Helvey Nov 2014 A1
20140337811 Knapp Nov 2014 A1
20150095865 Bhattacharya et al. Apr 2015 A1
20150213159 Arunachalam Jul 2015 A1
20150220674 Mihal et al. Aug 2015 A1
20150227646 Arunachalam et al. Aug 2015 A1
20150248514 Salodkar et al. Sep 2015 A1
20150331907 Bruestle Nov 2015 A1
20150347088 Bruestle Dec 2015 A1
20150379165 Knapp Dec 2015 A1
20160103940 Kerre et al. Apr 2016 A1
20160117432 Yuan et al. Apr 2016 A1
20160129341 Sahl et al. May 2016 A1
20160232272 Liu et al. Aug 2016 A1
20160335376 Arunachalam Nov 2016 A1
20160371424 Qian Dec 2016 A1
20170004249 Feng et al. Jan 2017 A1
20170097809 Bruestle Apr 2017 A1
20170147542 Bruestle May 2017 A1
20170161407 Alpert et al. Jun 2017 A1
20170206298 Wu et al. Jul 2017 A1
20170323047 Hsu et al. Nov 2017 A1
20180010485 Sahl et al. Jan 2018 A1
20180011963 Qian Jan 2018 A1
Foreign Referenced Citations (26)
Number Date Country
103885282 Jun 2014 CN
1199651 Nov 1998 EP
1146393 Apr 2000 EP
1925020 Sep 2006 EP
4071502 Jul 2003 JP
2004302932 Oct 2004 JP
2007264475 Oct 2007 JP
2008258361 Oct 2008 JP
100542532 Sep 2003 KR
100529619 Jun 2005 KR
100640479 Dec 2005 KR
20080005374 Apr 2006 KR
2008966 Jun 2012 NL
WO1999014638 Sep 1997 WO
WO1999014636 Mar 1999 WO
WO1999014706 Mar 1999 WO
WO1999014706 Mar 1999 WO
WO2002009152 Jan 2002 WO
WO2002044699 Jun 2002 WO
WO2004061898 Jul 2004 WO
WO2005109256 May 2006 WO
WO2006127408 Nov 2006 WO
WO2006127438 Nov 2006 WO
WO2007041600 Apr 2007 WO
WO2007147826 Dec 2007 WO
WO2008031744 Mar 2008 WO
Non-Patent Literature Citations (192)
Entry
Letter from Lasker to Shanahan dated Jun. 29, 2018.
IYM v. AMD, Case 1:16-cv-00649-GMS, Apr. 5, 2017 _IYM Invalidity Contentions.
IYM v. AMD, Case 1:16-cv-00649-GMS, Apr. 5, 2017 IYM Invalidity Contentions Exhibit 1—Invalidity Claim Chart—U.S. Pat. No. 7,194,725.
IYM v. AMD, Case 1:16-cv-00649-GMS, Apr. 5, 2017 IYM Invalidity Contentions Exhibit 2—Invalidity Claim Chart—U.S. Pat. No. 7,523,429.
IYM v. AMD, Case 1:16-cv-00649-GMS, Apr. 5, 2017 IYM Invalidity Contentions Exhibit 3—Invalidity Claim Chart—U.S. Pat. No. 6,745,372.
IYM v. AMD, Case 1:16-cv-00649-GMS, Apr. 5, 2017 IYM Invalidity Contentions Exhibit 4—Invalidity Claim Chart—Allan.
IYM v. AMD, Case 1:16-cv-00649-GMS, Apr. 5, 2017 IYM Invalidity Contentions Exhibit 5—Invalidity Claim Chart—Chiluvuri.
IYM v. AMD, Case 1:16-cv-00649-GMS, Jan. 17, 2018 Opening Expert Report of Dr. Nagel re Invalidity of U.S. Pat. No. 7,448,012 with Exhibit A.
IYM v. AMD, Case 1:16-cv-00649-GMS, Mar. 13, 2018 Reply Expert Report of Dr. Laurence W. Nagel re Invalidity of U.S. Pat. No. 7,448,012.
IYM v. AMD, Case 1:16-cv-00649-GMS, AMDs Opening Claim Construction Brief.
IYM v. AMD, Case 1:16-cv-00649-GMS, DI_012 Sep. 22, 2016 AMD Brief re motion to dismiss.
IYM v. AMD, Case 1:16-cv-00649-GMS, DI_017.00 Oct. 26, 2016 IYM response to motion to dismiss.
IYM v. AMD, Case 1:16-cv-00649-GMS, DI_019 Nov. 21, 2016 AMD reply brief.
IYM v. AMD, Case 1:16-cv-00649-GMS, DI_074 Jul. 20, 2017 AMD responsive claim construction brief.
IYM v. AMD, Case 1:16-cv-00649-GMS, IYMs Opening Claim Construction Brief.
IPR2017-001888 Petition for Inter Partes Review.
IPR2017-001888 Power of Attorney.
IPR2017-001888 Exhibit 1001—U.S. Pat. No. 7,448,012.
IPR2017-001888 Exhibit 1002—Declaration of Laurence W. Nagel, Ph.D.
IPR2017-001888 Exhibit 1003—CV of Laurence W. Nagel, Ph.D.
IPR2017-001888 Exhibit 1004—U.S. Pat. No. 6,745,372 (Cote).
IPR2017-001888 Exhibit 1005—U.S. Pat. No. 5,663,891 (Bamji).
IPR2017-001888 Exhibit 1006—U.S. Pat. No. 7,523,429 (Kroyan).
IPR2017-001888 Exhibit 1007—U.S. Pat. No. 6,249,904 (Cobb).
IPR2017-001888 Exhibit 1008—U.S. Pub. No. 2003/0061583 (Malhotra).
IPR2017-001888 Exhibit 1009—U.S. Pat. No. 7,194,725 (Lukanc).
IPR2017-001888 Exhibit 1010—U.S. Pat. No. 5,519,628 (Russell).
IPR2017-001888 Exhibit 1011—Mead and Conway, Introduction to VLSI Systems, 1980.
IPR2017-001888 Exhibit 1012—Tsividis, Operation and Modeling of the MOS Transistor, 1987.
IPR2017-001888 Exhibit 1013—Rabaey, Digital Integrated Circuits—A Design Perspective, 1996.
IPR2017-001888 Exhibit 1014—Weste and Eshragian, Principles of CMOS VLSI Design—A Systems Perspective, 1993.
IPR2017-001888 Exhibit 1015—An Yield Improvement Technique for IC Layout Using Local Design Rules, 1992 (Allan).
IPR2017-001888 Exhibit 1016—File History of U.S. Pat. No. 7,448,012.
IPR2017-001888 Exhibit 1017—IYM v. AMD, Case No. 16-cv-00649, Dkt No. 71 (Plaintiff's Opening Claim Construction Brief) (Jun. 22, 2017 D. Del.).
IPR2017-001888 Exhibit 1018—Excerpts of File History of U.S. Pat. No. 6,745,372 (Cote).
IPR2017-001888 Exhibit 1019—Nagel, A Unified Circuit Model for Bipolar Transistors Including Quasi-Saturation Effects, 1985.
IPR2017-001888 Exhibit 1020—Pre-2004 IEEE Publications Citing Allan (Ex. 1015).
IPR2017-001888 Exhibit 1021—Information Disclosure Sheet and Allan from prosecution of application leading to U.S. Pat. No. 7,134,102.
IPR2017-001888 Exhibit 1022—Information Disclosure Sheet and Allan from prosecution of application leading to U.S. Pat. No. 7,346,865.
IPR2017-001888 Exhibit 1023—McGraw-Hill Dictionary of Scientific and Technical Terms, 988 (6th ed. 2002).
IPR2017-001888 Exhibit 1024—Information Disclosure Sheet and Allan from prosecution of application leading to U.S. Pat. No. 7,698,676.
IPR2017-001888 Patent Owner's Power of Attorney Pursuant to 37 C.F.R. 42.10(B).
IPR2017-001888 Patent Owner's Mandatory Notices Pursuant to 37 C.F.R. 42.8.
IPR2017-001888 Petitioners' Corrected Exhibit List.
IPR2017-001888 Patent Owner's Preliminary Response.
IPR2017-001888 Exhibit 2001—U.S. Pat. No. 6,978,438.
IPR2017-001888 Exhibit 2003—McGraw-Hill Dictionary of Math Excerpts.
IPR2017-001888 Exhibit 2004—MPEP E8R5 719.05.
IPR2017-001888 Exhibit 2006—MPEP 1948.
IPR2017-001888 Exhibit 2008—UPWS Searchable Index East Main Menu.
IPR2017-001888 Exhibit 2011—U.S. Pat. No. 5,825,660.
IPR2017-001888 Exhibit 2002—1996 IEEE Standard Dictionary Excerpts.
IPR2017-001888 Exhibit 2005—MPEP E8R5 904.
IPR2017-001888 Exhibit 2007—US Quick Reference Guide for East and West.
IPR2017-001888 Exhibit 2009—Cote file history—search notes.
IPR2017-001888 Exhibit 2010—U.S. Pat. No. 5,559,718.
IPR2017-001888 Patent Owner's Objections to Evidence Submitted With Petition.
IPR2017-001888 Notice of Accord Filing Date.
IPR2017-001888 Order—Conduct of the Proceeding.
IPR2017-001888 Decision Granting Institution of Inter Partes Review.
IPR2017-001888 Scheduling Order.
IPR2017-01886 Exhibit 1002—Declaration of Laurence W. Nagel, Ph.D.
IPR2017-001886 Exhibit 1005—U.S. Pat. No. 5,663,891 (Bamji).
IPR2017-001886 Exhibit 1011—Mead and Conway, Introduction to VLSI Systems, 1980.
IPR2017-001886 Exhibit 1013—Rabaey, Digital Integrated Circuits—A Design Perspective, 1996.
IPR2017-001886 Petition for Inter Partes Review.
IPR2017-001886 Power of Attorney.
IPR2017-001886 Exhibit 1001—U.S. Pat. No. 7,448,012.
IPR2017-001886 Exhibit 1003—CV of Laurence W. Nagel, Ph.D.
IPR2017-001886 Exhibit 1004—U.S. Pat. No. 6,745,372 (Cote).
IPR2017-001886 Exhibit 1006—U.S. Pat. No. 7,523,429 (Kroyan).
IPR2017-001886 Exhibit 1007—U.S. Pat. No. 6,249,904 (Cobb).
IPR2017-001886 Exhibit 1008—U.S. Pub. No. 2003/0061583 (Malhotra).
IPR2017-001886 Exhibit 1009—U.S. Pat. No. 7,194,725 (Lukanc).
IPR2017-001886 Exhibit 1010—U.S. Pat. No. 5,519,628 (Russell).
IPR2017-001886 Exhibit 1012—Tsividis, Operation and Modeling of the MOS Transistor, 1987.
IPR2017-001886 Exhibit 1014—Weste and Eshragian, Principles of CMOS VLSI Design—A Systems Perspective, 1993.
IPR2017-001886 Exhibit 1015—An Yield Improvement Technique for IC Layout Using Local Design Rules, 1992 (Allan).
IPR2017-001886 Exhibit 1016—File History of U.S. Pat. No. 7,448,012.
IPR2017-001886 Exhibit 1017—IYM v. AMD, Case No. 16-cv-00649, Dkt No. 71 (Plaintiff's Opening Claim Construction Brief) (Jun. 22, 2017 D. Del.).
IPR2017-001886 Exhibit 1018—Excerpts of File History of U.S. Pat. No. 6,745,372 (Cote).
IPR2017-001886 Exhibit 1019—Nagel, A Unified Circuit Model for Bipolar Transistors Including Quasi-Saturation Effects, 1985.
IPR2017-001886 Exhibit 1020—Pre-2004 IEEE Publications Citing Allan (Ex. 1015).
IPR2017-001886 Exhibit 1021—1021 Information Disclosure Sheet and Allan from prosecution of application leading to U.S. Pat. No. 7,134,102.
IPR2017-001886 Exhibit 1022—Information Disclosure Sheet and Allan from prosecution of application leading to U.S. Pat. No. 7,345,865.
IPR2017-001886 Exhibit 1023—McGraw-Hill Dictionary of Scientific and Technical Terms, 988 (6th ed. 2002).
IPR2017-001886 Exhibit 1024—Information Disclosure Sheet and Allan from prosecution of application leading to U.S. Pat. No. 7,698,676.
IPR2017-001886 Patent Owner's Power of Attorney Pursuant to 37 C.F.R. 42.10(B).
IPR2017-001886 Patent Owner's Mandatory Notices Pursuant to 37 C.F.R. 42.8.
IPR2017-001886 Petitioners' Corrected Exhibit List.
IPR2017-001886 Exhibit 2002—1996 IEEE Standard Dictionary Excerpts.
IPR2017-001886 Exhibit 2004—MPEP E8R5 719.05.
IPR2017-001886 Exhibit 2005—MPEP E8R5 904.
IPR2017-001886 Exhibit 2006—MPEP 1948.
IPR2017-001886 Exhibit 2007—US Quick Reference Guide for East and West.
IPR2017-001886 Exhibit 2010—U.S. Pat. No. 5,559,718.
IPR2017-001886 Exhibit 2011—U.S. Pat. No. 5,825,660.
IPR2017-001886 Patent Owner's Preliminary Response.
IPR2017-001886 Exhibit 2001—U.S. Pat. No. 6,978,438.
IPR2017-001886 Exhibit 2003—McGraw-Hill Dictionary of Math Excerpts.
IPR2017-001886 Exhibit 2008—UPWS Searchable Index East Main Menu.
IPR2017-001886 Exhibit 2009—Cote file history—search notes.
IPR2017-001886 Patent Owner's Objections to Evidence Submitted With Petition.
IPR2017-001886 Notice of Filing Date Accorded to Petition and Time for Filing Patent Owner Preliminary Response.
IPR2017-001886 Scheduling Order.
IPR2017-001886 Decision Granting Institution of Inter Partes Review.
IPR2017-01888 Ex1025 Declaration of Gerard P. Grenier.
IPR2017-01888 Ex1026 Declaration of Bryan S. Conley in Support of Motion for Admission Pro Hac Vice.
IPR2017-01888 Ex1027 Transcript of Deposition of Joseph B. Bernstein, M.D. (Aug. 22, 2018).
IPR2017-01888 Ex1028 Doenhardt et al., “Algorithmic Aspects of One-Dimensional Layout Compaction”.
IPR2017-01888 Ex2012 Bernstein Declaration with Appendix A.
IPR2017-01888 Ex2013 Nagel Deposition Transcript.
IPR2017-01888 Ex2014 U.S. Appl. No. 60/603,758.
IPR2017-01888 Ex2015 Claim Construction Order.
IPR2017-01888 Ex2016 IYM responsive claim construction brief.
IPR2017-01888 Ex2017 Concise OED (2004)—enforce.
IPR2017-01888 Ex2018 Nagel Ex8.
IPR2017-01888 Ex2019 Nagel Ex9.
IPR2017-01888 Ex2020 Nagel Ex4.
IPR2017-01888 Ex2021 Collins Dict of Math—objective function + optimum.
IPR2017-01888 Ex2022 (Wizenfeld Bio).
IPR2017-01888 Ex2023 Declaration of Charles Wizenfeld in Support of Motion for Pro Hac Vice Admission.
IPR2017-01888 Ex2024 Patent Owner's Demonstrative Exhibits.
IPR2017-01888 Ex2024 Petitioners' Demonstrative Exhibits.
IPR2017-01888 Paper 12 Conduct of the Proceeding.
IPR2017-01888 Paper 13 Patent Owner's Updated Mandatory Notices.
IPR2017-01888 Paper 14 Petitioners' Motion to Submit Supplemental Information.
IPR2017-01888 Paper 15 Notice of Deposition of Laurence W. Nagel.
IPR2017-01888 Paper 16 Decision Granting Petitioner's Motion to Submit Supplemental Information.
IPR2017-01888 Paper 17 Patent Owner's Response.
IPR2017-01888 Paper 18 Motion for Charles Wizenfeld to Appear Pro Hac Vice on Behalf of Patent Owner IYM Technologies LLC.
IPR2017-01888 Paper 19 Granting Patent Owner's Motions for Pro Hac Vice Admission of Mr. Charles Wizenfeld 37 C.F.R. sec. 42.10(c).
IPR2017-01888 Paper 20 Petitioners' Unopposed Motion for Admission Pro Hac Vice of Bryan S. Conley.
IPR2017-01888 Paper 21 Granting Petitioner's Motions for Pro Hac Vice Admission of Mr. Bryan S. Conley 37 C.F.R. § 42.10(c).
IPR2017-01888 Paper 22 Notice of Deposition of Dr. Joseph Bernstein.
IPR2017-01888 Paper 23 Petitioners' Reply to Patent Owner's Response.
IPR2017-01888 Paper 24 Order—Conduct of the Proceedings.
IPR2017-01888 Paper 25 Petitioners' Request for Oral Hearing.
IPR2017-01888 Paper 26 Patent Owner's Request for Oral Argument.
IPR2017-01888 Paper 27 Patent Owner's Sur-Reply.
IPR2017-01888 Paper 28 Order granting Oral Argument.
IPR2017-01888 Paper 29 Petitioners' Updated Mandatory Notices.
IPR2017-01888 Paper 30 Petitioners' Updated Power of Attorney.
IPR2017-01888 Paper 31 Order—37 C.F.R. 42.5(a).
IPR2017-01888 Paper 32 Patent Owner's Updated Exhibit List.
IPR2017-01888 Paper 32 Petitioners' Notice of Filing Demonstrative Exhibits.
IPR2017-01888 Paper 34 Hearing Transcript.
IPR2017-01888 Paper 35 Termination Decision Document.
IPR2017-01888 Paper 36 Patent Owner's Notice of Appeal.
IPR2017-01886 Ex 1025 Declaration of Bryan S. Conley in Support of Motion for Admission Pro Hac Vice.
IPR2017-01886 Ex 1027 Transcript of Deposition of Joseph B. Bernstein, M.D. (Aug. 22, 2018).
IPR2017-01886 Ex 1028 Doenhardt et al., “Algorithmic Aspects of One-Dimensional Layout Compaction”.
IPR2017-01886 Ex 1029 Petitioners' Demonstrative Exhibits.
IPR2017-01886 Ex 2012 Bernstein Declaration with Appendix A.
IPR2017-01886 Ex 2013 Nagel Deposition Transcript.
IPR2017-01886 Ex 2014 U.S. Appl. No. 60/603,758.
IPR2017-01886 Ex 2015 Claim Construction Order.
IPR2017-01886 Ex 2015 Declaration of Bryan S. Conley in Support of Motion for Admission Pro Hac Vice.
IPR2017-01886 Ex 2016 IYM responsive claim construction brief.
IPR2017-01886 Ex 2017 Concise OED (2004)—enforce.
IPR2017-01886 Ex 2018 Nagel Exhibit 8.
IPR2017-01886 Ex 2019 Nagel Exhibit 9.
IPR2017-01886 Ex 2020 Nagel Exhibit 4.
IPR2017-01886 Ex 2021 Collins Dict of Math—objective function + optimum.
IPR2017-01886 Ex 2022 (Wizenfeld Bio).
IPR2017-01886 Ex 2023 Declaration of Charles Wizenfeld in Support of Motion for Pro Hac Vice Admission.
IPR2017-01886 Ex 2024 Patent Owner's Demonstrative Exhibits.
IPR2017-01886 Paper 12 Patent Owner's Updated Mandatory Notices.
IPR2017-01886 Paper 13 Notice of Deposition of Laurence W. Nagel.
IPR2017-01886 Paper 14 Patent Owner's Response.
IPR2017-01886 Paper 15 Motion for Charles Wizenfeld to Appear Pro Hac Vice on Behalf of Patent Owner IYM Technologies LLC.
IPR2017-01886 Paper 16 Granting Patent Owner's Motions for Pro Hac Vice Admission of Mr. Charles Wizenfeld 37 C.F.R. sec. 42.10(c).
IPR2017-01886 Paper 17 Petitioners' Unopposed Motion for Admission Pro Hac Vice of Bryan S. Conley.
IPR2017-01886 Paper 18 Granting Petitioner's Motions for Pro Hac Vice Admission of Mr. Bryan S. Conley 37 C.F.R. § 42.10(c).
IPR2017-01886 Paper 19 Notice of Deposition of Dr. Joseph Bernstein.
IPR2017-01886 Paper 20 Petitioners' Reply to Patent Owner's Response.
IPR2017-01886 Paper 21 Order—Conduct of the Proceedings.
IPR2017-01886 Paper 22 Petitioners' Request for Oral Hearing.
IPR2017-01886 Paper 23 Patent Owner's Request for Oral Argument.
IPR2017-01886 Paper 24 Patent Owner's Sur-Reply.
IPR2017-01886 Paper 25 Conduct of the Proceeding 37 C.F.R. § 42.5(a).
IPR2017-01886 Paper 26 Order granting Oral Argument.
IPR2017-01886 Paper 27 Petitioners' List of Improper Arguments in Patent Owner's Sur-Reply.
IPR2017-01886 Paper 28 Petitioners' Updated Mandatory Notices.
IPR2017-01886 Paper 29 Petitioners' Updated Power of Attorney.
IPR2017-01886 Paper 30 Patent Owner's Response to Petitioners' List of Allegedly Improper Arguments in Patent Owner's Sur-Reply (Paper 27).
IPR2017-01886 Paper 31 Order—37 C.F.R. 42.5(a).
IPR2017-01886 Paper 32 Patent Owner's Updated Exhibit List.
IPR2017-01886 Paper 33 Petitioners' Notice of Filing Demonstrative Exhibits.
IPR2017-01886 Paper 34 Hearing Transcript.
IPR2017-01886 Paper 35 Termination Decision Document.
IPR2017-01886 Paper 36 Patent Owner's Notice of Appeal.
Related Publications (1)
Number Date Country
20180181698 A1 Jun 2018 US
Provisional Applications (2)
Number Date Country
60603758 Aug 2004 US
60564082 Apr 2004 US
Continuations (5)
Number Date Country
Parent 15715097 Sep 2017 US
Child 15903632 US
Parent 15251961 Aug 2016 US
Child 15715097 US
Parent 13886577 May 2013 US
Child 15251961 US
Parent 13547444 Jul 2012 US
Child 13886577 US
Parent 12181483 Jul 2008 US
Child 13547444 US
Continuation in Parts (1)
Number Date Country
Parent 10907814 Apr 2005 US
Child 12181483 US