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Adapting basic layout or design of masks to lithographic process requirement, e.g., second iteration correction of mask patterns for imaging
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CPC
G03F1/70
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Parent Industries
G
PHYSICS
G03
Photography
G03F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES
G03F1/00
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles Mask blanks or pellicles therefor Containers specially adapted therefor Preparation thereof
Current Industry
G03F1/70
Adapting basic layout or design of masks to lithographic process requirement, e.g., second iteration correction of mask patterns for imaging
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