TREA

Adapting basic layout or design of masks to lithographic process requirement, e.g., second iteration correction of mask patterns for imaging

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Industry

  • CPC
  • G03F1/70
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Parent Industries

GPHYSICS G03Photography G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles Mask blanks or pellicles therefor Containers specially adapted therefor Preparation thereof

Current Industry

G03F1/70Adapting basic layout or design of masks to lithographic process requirement, e.g., second iteration correction of mask patterns for imaging
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