Claims
- 1. An integrated laser pump module operable to combine a plurality of optical wavelengths, said module comprising:
a base layer having a first surface and a second surface and a substantially perpendicular surface therebetween, wherein said first surface and said second surface are in a step relation; a plurality of waveguides fabricated in said base layer proximate said second surface interconnected in a known manner to produce a waveguide output, wherein each waveguide has a first end in said substantially perpendicular surface; and a semiconductor laser array having a plurality of active regions located on said first surface and proximately located to said substantially perpendicular surface, wherein each active region is operable to emit a narrow spectra wavelength into a substantially oppositely opposed corresponding waveguide first end.
- 2. The module as recited in claim 1 further comprising:
a bonding material interposed between said laser array and first surface.
- 3. The module as recited in claim 2 wherein said bonding material is selected from the group: AuSn, PbSn, In.
- 4. The module as recited in claim 2 wherein said bonding material is dimensionally comparable with said laser array.
- 5. The module as recited in claim 2 wherein said bonding material comprises a plurality of elements, each of said elements corresponding to at least one selected laser active region, wherein said elements are position such that said at least one selected active region is contained within said corresponding element.
- 6. The module as recited in claim 1 further comprising:
a thermal cooling layer upon which said base layer is placed or deposited.
- 7. The module as recited in claim 1 wherein said laser array is composed of a plurality of semiconductor lasers.
- 8. The module as recited in claim 1 wherein said laser array is composed of a single material adapted to include a plurality of active regions.
- 9. The module as recited in claim 1 wherein said laser array is composed of a single material having a plurality of quantum wells of the same or differing widths.
- 10. The module as recited in claim 1 wherein said base layer is an optic-electronic material is selected from the group composed of InP, GaAS, Si, AlN.
- 11. The module as recited in claim 1 wherein said base layer is a material having a high thermal coefficient of expansion.
- 12. The module as recited in claim 1 wherein said base layer is a material having a coefficient of thermal expansion substantially similar to that of said laser array.
- 13. The module as recited in claim 1 wherein said selected at least one substantially perpendicular surface includes an anti-reflective coating.
- 14. The module as recited in claim 1 wherein said laser array is composed of DFB lasers.
- 15. The module as recited in claim 6 wherein said cooler is a thermo-electric cooler.
- 16. The module as recited in claim 1 wherein said waveguides are Mach-Zehnder Interferometers.
- 17. The module as recited in claim 1 wherein said waveguides are directional couplers.
- 18. An integrated laser pump module operable to combine a plurality of optical wavelengths onto a common waveguide output, said module comprising:
a base layer having a first surface and a second surface and at least one substantially perpendicular surface therebetween such that said first surface and said second surface are in a step relation, at least one of said substantially perpendicular surfaces includes an anti-reflective coating. a plurality of waveguides contained within said base layer, proximate to said second surface, each of said waveguides having a first end and a second end wherein each of said first ends is located on said substantially perpendicular surface having said anti-reflective coating and each of said waveguide second ends interconnected in a manner to produce said common waveguide output; a bonding material deposited on said first surface; and a semiconductor laser array having a plurality of narrow spectra wavelength emitting active regions located on said bonding material and proximately located to said substantially perpendicular surface having said anti-reflective coating, wherein each active region substantially oppositely opposes a corresponding waveguide first end such that said emitted wavelength is directed toward a corresponding first end.
- 19. The module as recited in claim 18 further comprising:
a thermal cooling layer upon which said base layer is placed or deposited.
- 20. The module as recited in claim 18 wherein said laser array is composed of a plurality of semiconductor lasers.
- 21. The module as recited in claim 18 wherein said laser array is composed of a single semiconductor material adapted to include a plurality of active regions.
- 22. The module as recited in claim 18 wherein said laser array is composed of a single material having a plurality of quantum wells of the same or differing widths.
- 23. The module as recited in claim 18 wherein said bonding material is selected from the group: AuSn, PbSn, In.
- 24. The module as recited in claim 18 wherein said bonding material is dimensionally comparable with said laser array.
- 25. The module as recited in claim 18 wherein said bonding material comprises a plurality of mutually exclusive pads corresponding to at least one selected laser active region and positioned such that said at least one active region is contained within said corresponding pad.
- 26. The module as recited in claim 18 wherein said lasers are DFB lasers.
- 27. The module as recited in claim 19 wherein said cooler is a thermoelectric cooler.
- 28. The module as recited in claim 18 wherein said base layer is an optic-electronic material is selected from the group composed of InP, GaAs, Si, AlN.
- 29. The module as recited in claim 18 wherein said base layer is a material having a high thermal coefficient of expansion.
- 30. The module as recited in claim 18 wherein said base layer material has a coefficient of thermal expansion substantially similar to that of said laser array.
- 31. A high power integrated laser pump module comprising:
a base layer comprising:
a plurality of waveguides contained therein, each of said waveguides having a first end and a second end, wherein each waveguide is interconnected to an adjacent waveguide in a manner to produce a common waveguide output; and a well, forming a first surface and at least one substantially perpendicular edge in said base layer and to said plurality of waveguide first ends, wherein said first ends are contained within one of said at least one substantially perpendicular well edge; and a semiconductor laser array having a plurality of narrow spectra wavelength emitting active regions located on said first surface and proximately located to said substantially perpendicular surface containing said first ends, wherein each active region substantially oppositely opposes a corresponding waveguide first end.
- 32. The module as recited in claim 31 further comprising:
a bonding material interposed between said laser array and first surface.
- 33. The module as recited in claim 32 wherein said bonding material is selected from the group: AuSn, PbSn, In.
- 34. The module as recited in claim 32 wherein said bonding material is dimensionally comparable with said laser array.
- 35. The module as recited in claim 32 wherein said bonding material comprises a plurality of pads, each of said pads corresponding to at least one selected laser active region, wherein said pads are position such that said at least one selected active region is contained within said corresponding pads.
- 36. The module as recited in claim 31 further comprising:
a thermal cooling layer upon which said base layer is placed or deposited.
- 37. The module as recited in claim 31 wherein said laser array is composed of a plurality of semiconductor lasers.
- 38. The module as recited in claim 31 wherein said laser array is composed of a single material adapted to include a plurality of active regions.
- 39. The module as recited in claim 31 wherein said laser array is composed of a single material having a plurality of quantum wells of the same or differing widths.
- 40. The module as recited in claim 31 wherein said base layer is an optic-electronic material is selected from the group composed of InP, GaAS, Si, AlN.
- 41. The module as recited in claim 31 wherein said base layer is a material having a high thermal coefficient of expansion.
- 42. The module as recited in claim 31 wherein said base layer is a material having a coefficient of thermal expansion substantially similar to that of said laser array.
- 43. The module as recited in claim 31 wherein said substantially perpendicular surface containing said first ends includes an anti-reflective coating.
- 44. The module as recited in claim 31 wherein said laser array is composed of DFB lasers.
- 45. The module as recited in claim 36 wherein said cooler is a thermo-electric cooler.
- 46. The module as recited in claim 31 wherein said waveguides are Mach-Zendnder Interferometers.
- 47. The module as recited in claim 31 wherein said waveguides are directional couplers.
- 48. The module as recited in claim 31 wherein said plough is substantially “U-shaped.”
- 49. The module as recited in claim 31 wherein said plough is substantially “L-shaped.”
- 50. A high power integrated laser pump module comprising:
a base layer comprising: a plurality of waveguides contained therein, each of said
waveguides having a first end and a second end, wherein each waveguide is interconnected to an adjacent waveguide in a manner to produce a common waveguide output; and a semiconductor laser array having a plurality of narrow spectra wavelength emitting active regions adjacently located to a corresponding waveguide first end, wherein each active region substantially oppositely opposes a corresponding waveguide first end such that said emitted wavelength is directed toward a corresponding first end; and a contact layer deposited on said base layer vertically disposed to said active regions.
- 51. The module as recited in claim 50 further comprising:
a thermal cooling layer upon which said base layer is placed or deposited.
- 52. The module as recited in claim 50 wherein said laser array is composed of a plurality of quantum wells of the same or differing widths.
- 53. The module as recited in claim 50 wherein said base layer is a semiconductor material selected from the group comprising: GaAs, InP, Si.
- 54. The module as recited in claim 50 wherein said laser array is composed of DFB lasers.
- 55. The module as recited in claim 50 wherein said cooler is a thermo-electric cooler.
- 56. The module as recited in claim 50 wherein said waveguides are Mach-Zehnder Interferometers.
- 57. The module as recited in claim 50 wherein said waveguides are directional couplers.
- 58. The module as recited in claim 50 wherein said contact layer is a p-doped semi-conductor material.
- 59. The module as recited in claim 50 wherein said contact layer is a material of high electrical conductivity.
- 60. The module as recited in claim 50 further comprising:
at least one second contact layer vertically deposited above selected portions of a corresponding waveguide.
BENEFIT OF PRIORITY FILING DATE
[0001] This application claims the benefit under 35 U.S.C. §119 of the earlier filing date of provisional application serial No. ______, entitled “Integrated Multiple Wavelength Laser Pump Module, ” filed on Jun. 8, 2001.
Provisional Applications (1)
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Number |
Date |
Country |
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60296799 |
Jun 2001 |
US |