The present invention relates generally to photovoltaic cells (PV) and the detailed layer structure thereof. More specifically, the present invention relates to the structure of a thin-film PV cell that is intrinsically semitransparent and the method of making such a device including control of the transmitted light color or spectrum and control of the reflected light color or spectrum.
The vast majority of photovoltaic devices or solar cells are fully opaque so that essentially all light incident on the cell is absorbed by the cell or module. Maximizing the light absorption will maximize the power generated by the solar cell. However, in some applications it is desired to use the PV device in an arrangement that allows some of the light to pass through the device, such as in a window, skylight, sunroof or canopy. There are a number of module structures in which some light transmission has been obtained by spacing the cells such that light passes between individual cells in a module (e.g., wafer silicon modules or copper-indium-gallium-diselenide (CIGS) cells on metal foil coupons) to provide some averaged light transmission. There are other structures that use thin-film PV in which some of the PV coating has been removed, such as by laser scribing or chemical etching. These solutions have the significant disadvantage of yielding a spatially non-uniform light transmission which is often undesirable.
There are some other thin-film PV materials that offer partial light transmission without such spacing of cells or selective removal. These include organic PV (small molecule or polymer) and dye sensitized solar cells (DSSC) which have relatively narrow absorption bands that absorb strongly in some spectral regions and weakly in others. This yields light transmission that is highly colored and also results in poor PV efficiency because only a narrow band of the visible spectrum is absorbed. Some other thin-film PV materials such as amorphous silicon (also called thin-film silicon) may transmit light but generally have low sunlight to electrical power conversion efficiencies of about 4 to 6% and poor transmitted light spectra with a reddish tint. It is desirable to have a solar cell that is semitransparent without the limitations of the prior semitransparent solar cells.
The present invention describes three structures and methods of fabricating thin-film solar cells that modify the appearance of photovoltaic window insulating glass unit (PV IGU) and are illustrated for the case of one thin-film cell or module, namely one based on ultra-thin layers of cadmium sulfide (CdS) and cadmium telluride (CdTe) or their alloys with other group II and group VI elements. One structure and method controls the appearance or color of the transmitted light, the second structure and method controls the amount and appearance of the light reflected from the outside of the PV IGU, and the third structure and method controls the amount and appearance of light reflected from the inside of the PV IGU.
The present invention first describes structure and methods of controlling the spectrum of light transmitted through a thin-film cell or module. This cell or module may be based on ultra-thin layers of cadmium sulfide and cadmium telluride together with a front transparent contact layer and a back transparent contact layer. However, the methods described in this invention are applicable to cells and modules based on other thin-film PV materials, such as organic PV and thin-film silicon PV (CIGS).
This invention first describes a structure and method of controlling the transmitted light spectrum either by adding a component after the PV IGU that absorbs or reflects certain selected wavelength components, or by incorporating additional layers into the cell or module that absorb or reflect certain selected wavelength components.
The second part of the present invention describes a structure and method of controlling the light spectrum reflected from the outside of the PV IGU, that is, from the exterior of a building or vehicle.
The third part of the present invention describes a structure and method of controlling the amount of light and the light spectrum reflected from the inside of the PV IGU, that is, from the interior of a building or vehicle
The structures and methods described herein are applicable to ultra-thin film CdTe cells and modules and are demonstrated thereon. However, they are also applicable to other semitransparent PV cells and modules such as, but not limited to those fabricated from thin-film silicon, copper indium gallium diselenide and related materials, organic materials, and dye-sensitized solar cells.
The present invention relates generally to PV cells and methods of fabrication thereof. More particularly, this invention relates to a PV cell having an absorber layer sufficiently thin but uniform and pinhole free so as to be semitransparent but still to have high efficiency as a solar cell or module.
The present invention discloses the structure of, and the method of manufacturing of, such a semitransparent PV IGU that incorporates elements for control of the amount and color spectrum of transmitted light, for control of the amount and color spectrum of light reflected from the outside of the module, and control of the amount and color spectrum of light reflected from the inside of the PV IGU.
The present invention relates to an earlier invention, “INTRINSICALLY SEMITRANSPARENT SOLAR CELL AND METHOD OF MAKING SAME,” and describes improvements thereof that control and balance the color spectrum of the transmitted or reflected light to achieve and enhance desired effects. Improvements proposed here also lead to improved current generation in the cell and therefore higher efficiency. One commonly desired effect is that the transmitted light color be as neutral as possible, that is, that the color of the transmitted light be approximately the same as that of the incident light, as perceived by the human eye. This is frequently referred to as the transmitting object or window having “neutral density.” This means the light intensity is attenuated but otherwise composed of the same or similar spectral components.
Other objects and advantages of the present invention will become apparent to those skilled in the art upon a review of the following detailed description of the preferred embodiments and the accompanying drawings.
a is a perspective side elevational view of a structure to change the light color spectrum transmitted through the PV IGU structure by selective absorption.
b and 2c are perspective side elevational views of the invention of
a is a perspective side elevational view of a layer structure to change the intensity and color of light reflected from the interior side of the PV IGU incorporating a multilayer dielectric coating that is non-absorptive.
b is a perspective side elevational view of a layer structure to change the intensity and color of light reflected from the interior side of the PV IGU glass or polymer film controlling color by selective absorption
a is a graph of the reflectance of a 15 nm gold film on glass (left axis) and the photopic response of the human eye (right axis).
b is a graph of the reflectance of a 15 nm gold film on glass after depositing four transparent dielectric layers consisting of 100 nm of SiO2, 88 nm of TiO2, 100 nm of SiO2, and 88 nm of TiO2. The photopic response of the human eye is shown on the right axis.
a is a graph of the reflectance of a 15 nm gold layer modified by the addition of two dielectric layers consisting of 140 nm of SiO2 and 60 nm of TiO2. The photopic response of the human eye is shown on the right axis.
b is a graph of the reflectance of a 15 nm gold layer modified by the addition of 140 nm of SiO2 and 70 nm of TiO2. The photopic response of the human eye is shown on the right axis.
This invention first describes structures and methods for controlling the transmitted light spectrum either by adding a separate structural component to the PV cell or module that absorbs or reflects certain selected wavelength components, or by incorporating additional layers into the cell or module structure itself that absorb or reflect certain selected wavelength components.
The differences are best understood by referring to the drawings,
Referring to
In a preferred embodiment of the invention, the transparent electrode layer 14 is any one or more of the group zinc oxide (ZnO), zinc sulfide (ZnS), cadmium oxide (CdO), tin oxide doped with fluorine (SnO2:F), indium oxide doped with tin (In2O3:Sn), gallium oxide (Ga2O3), combinations of the preceding and other well known compositions of transparent conductive coatings. Most preferably, the transparent electrode layer 14 is ZnO. Also, preferably, the transparent electrode layer 14, whether ZnO, ZnS or CdO, is doped with a Group III element to form an n-type semiconducting layer. Most preferably, the transparent electrode layer 14 is ZnO doped with aluminum (AZO) or SnO doped with fluorine (FTO). Layer 18 is a high resistivity transparent (HRT) layer which may be any one of the group specified for layer 14 but without doping so that the electrical resistance is high. Preferably this HRT layer is ZnO or SnO2 with thickness of about 25 nm to about 200 nm; most preferably with a thickness from about 50 nm to about 100 nm.
The first of two primary semiconductor layers is an n-type semiconductor layer 20. In a preferred embodiment of the invention this n-type semiconductor layer 20 is cadmium sulfide (CdS). The second primary semiconductor layer is a p-type semiconductor 22, which is preferably cadmium telluride (CdTe) or an alloy of CdTe. Numerous other semiconductor layers can be used for either of these two primary semiconductor layers, as will be appreciated by those skilled in the art. Examples of possible semiconductors are any photovoltaic device including but not limited to: thin film technologies such as CdTe, CIGS, copper zinc tin sulfide (CZTS) a-Si; mono- and poly-crystalline silicon; dye-sensitized, polymer or organic solar cells with any visual light transparency achieved by either modifying chemical composition, reducing the thickness of the active layer or back contact, or partial removal of the active layer or the back contact by laser ablation or other patterning method. It is to be understood that an intrinsic semiconductor layer, not shown, can be disposed between the n-type semiconductor layer and the p-type semiconductor layer in conjunction with the present invention.
A back conductive electrode (BC) layer 26, which is the second of the two ohmic contacts or electrodes for the photovoltaic cell 10. The BC layer 26 contains a conductive lead 24 for conducting current through the electric circuit, not shown. Typically, the conductive electrode layer is made of nickel, titanium, chromium, aluminum, gold, molybdenum oxide or some other conductive material. Optionally, an additional protective or buffer layer of zinc telluride, not shown, can be positioned between the back contact layer 26 and the cadmium telluride semiconductor layer 22 to facilitate hole (positive charge carrier) transport from the cadmium telluride layer 22 to the BC layer 26 and to protect the cadmium telluride layer 22 form foreign contamination by migration. Also, it is to be understood that the layer of back buffer material and the BC layer 26 can sometimes be combined into a single layer, not shown. To handle both functions in a single contacting layer, the single layer would have to have an electrical conductivity substantially equivalent to that of the BC layer 26, and yet still would have to be capable of making good transition to the CdTe semiconductor layer.
The photovoltaic cell 10 includes a substrate layer 12, which preferably is a glass substrate 12. Other transparent materials, such as polyimides, can be used as an alternative for the glass substrate 12. A layer of a transparent conductive material, such as a transparent electrode layer 14, is applied to the glass layer 12. The transparent electrode layer 14 forms one of the two ohmic contacts or electrodes for the photovoltaic cell 10, and contains a conductive lead 16 for conducting current through an electric circuit, not shown. The transparent electrode layers are also sometimes referred to as a transparent conductive oxide (TCO), although some useful materials for this purpose are not oxides.
This BC layer 26 must have suitable electronic characteristics as required for a back contact to CdTe and it must be transparent. Among the required electronic properties are that the work function must be a good match to the electron affinity of the CdTe layer 22 such that the positive charge carriers (holes) can flow readily into the BC. The embodiment of BC preferred in the prototype window unit that is shown in
The photovoltaic cell 10 includes a thin-film CdTe solar cell 28. The thin-film CdTe solar cell 28 is the combination of the transparent electrode layer 14, conductive lead 16, HRT layer 18, semiconductor layers 20 and 22, conductive lead 24, and BC layer 26.
a illustrates a color selective absorbing element 30 which can be applied as a separate layer to the thin-film CdTe solar cell 28, most easily after the cell is completed, i.e., after the back contact 26 is applied. The structure of the color selective absorbing element 30 functions to change the light color spectrum transmitted through the PV IGU structure by selective absorption. A color selective absorbing element 30 layer can be added directly onto the BC 26 (
A color glass/polymer sheet, or color selective absorbing element 30 can be attached to the thin-film CdTe solar cell 28. In
Note that this structure in
The function of the color selective elements 30 and 36 described in
Comparing the function of the absorptive with the reflective element for color shifting of the transmitted light, one sees that there is little difference, in principle, between light transmitted through the PV structure using an absorptive or a reflective element that has the same transmission curve. So, as far as the colors perceived by a human viewing the transmitted light, there is little to prefer absorptive over reflective elements.
However, since a color selective absorbing element absorbs the solar radiation it will tend to heat up whereas a reflective element will not. We have described these color shifting elements as being placed behind the PV device structure because it is important to maximize the light absorption in the PV device structure to maximize the electricity generation, otherwise the color selective absorbing element could, in principle, be placed in front of the PV device structure. More importantly, the color selective reflecting element 36 is to be preferred (when placed behind the PV device structure) because it reflects the light back through the PV layers and therefore will naturally tend to enhance the efficiency of the PV window in converting sunlight to electricity. Therefore, the reflective element is to be preferred over the absorptive, although there may be differences in ease of construction or in cost that may cause the absorptive element to be preferred.
We have demonstrated the advantage of the color selective reflecting element 36 by measuring the current generated in an ultra-thin CdTe cell with and without a reflective element placed behind the cell, similar to the sketch of
The illustrative example provided in the paragraph above, used the reflective element behind the back contact coating. Functionally, it would be advantageous to place the reflective element immediately after the CdTe 22 layer and before the back contact or to make the reflective layers be part of the back contact itself. This might be done by using an appropriate metal with suitable reflection spectrum. (Gold films have optical characteristics with some suitable properties.) Most ideally, one may use a multilayer dielectric coating to achieve the optimum spectral reflectivity for this element, which might also have suitable electrical characteristics. These electrical characteristics would need to include the electrical conductivity and the interfacial properties to match the CdTe interface with suitable work function or electron affinity to provide good electrical transport of holes from the CdTe into the back contact and, if possible, electron reflection from the back contact structure (as described in the prior invention “INTRINSICALLY SEMITRANSPARENT SOLAR CELL AND METHOD OF MAKING SAME.”)
a shows the reflection from a thin layer of gold on glass with thickness typical of a back contact to CdTe. Gold reflects strongly in the deep red at about 700-800 nm but less strongly at 500 nm (blue-green to the eye). Thus a 15 nm layer of gold will appear as blue-green in transmitted light.
By applying silicon dioxide (SiO2) and titanium dioxide (TiO2) in a four-layer coating of transparent materials (SiO2/TiO2/SiO2/TiO2) with respective thicknesses of 100/88/100/88 nm, as shown in
Two other examples are shown in
The choice of materials used for the color selective reflective elements in the examples provided in
The second part of the present invention describes a structure and method of controlling the light spectrum reflected from the outside of the PV window is shown in
Typically low-E glass coatings often have a “color suppression” layer which provides some control of the light reflected from this lite. What is proposed here is a coating of one or more layers that is particularly optimized for use with the CdS/CdTe PV coating of this invention.
The third part of the present invention describes a method of controlling the amount of light and the light spectrum reflected from the inside of the PV window is shown in
The above detailed description of the present invention is given for explanatory purposes. It will be apparent to those skilled in the art that numerous changes and modifications can be made without departing from the scope of the invention. Accordingly, the whole of the foregoing description is to be construed in an illustrative and not a limitative sense, the scope of the invention being defined solely by the appended claims.
This application is based upon and claims the benefit of U.S. Provisional Patent Application No. 61/590,599; filed Jan. 25, 2012.
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/US13/23139 | 1/25/2013 | WO | 00 | 7/24/2014 |
Number | Date | Country | |
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61590599 | Jan 2012 | US |