Claims
- 1. A method for providing an identification unit comprising:
selecting a support, wherein said support contains a functional moiety on the surface of, or embedded within said support; providing an identifier, wherein said identifier comprises one or more particle size distributions of semiconductor nanocrystals having characteristic spectral emissions, and a reactive moiety attached to said one or more semiconductor nanocrystals, wherein said reactive moiety is selected for its ability to react with said functional moiety on the surface of, or embedded within said support; and associating said semiconductor nanocrystal with said support such that the semiconductor nanocrystal becomes attached to or embedded within the surface of said support by reaction of said reactive moiety with said functional moiety on the surface of, or embedded within said support.
- 2. The method of claim 1, wherein said support comprises a support selected from the group consisting of a bead, a pellet, a disk, a capillary, a hollow fiber, a needle, a solid fiber, a cellulose bead, a pore-glass bead, a silica gel, a polystyrene bead optionally cross-linked with divinylbenzene, a grafted co-poly bead, a poly-acrylamide bead, a latex bead, a dimethylacrylamide bead optionally cross-linked with N,N′-bis-acryloyl ethylene diamine, and a glass particle coated with a hydrophobic polymer and low molecular weight non-cross-linked polystyrene.
- 3. The method of claim 1, wherein said one or more particle size distributions of semiconductor nanocrystals having characteristic spectral emissions are further characterized in that they have an overcoating layer, the layer comprised of material having a band gap energy greater than that of the semiconductor nanocrystal.
- 4. The method of claim 1, wherein each of said one or more particle size distributions of semiconductor nanocrystals having characteristic spectral emissions is further characterized by having one or more characteristic intensities associated with said characteristic spectral emissions.
- 5. A method for providing an identification unit capable of acting as a tracer for an item of interest comprising:
selecting an item of interest; providing an identifier, wherein said identifier comprises one or more particle size distributions of semiconductor nanocrystals having characteristic spectral emissions, and a reactive moiety attached to said one or more semiconductor nanocrystals, wherein said reactive moiety is selected for its compatibility with said selected item of interest.
- 6. The method of claim 5, wherein said item of interest is selected from the group consisting of identification tag, security tag, consumer product, fluid, gas, solid, biomolecule, and chemical compound.
- 7. The method of claim 5, wherein said one or more particle size distributions of semiconductor nanocrystals having characteristic spectral emissions are further characterized in that they have an overcoating layer, the layer comprised of material having a band gap energy greater than that of the semiconductor nanocrystal.
- 8. The method of claim 5, wherein each of said one or more particle size distributions of semiconductor nanocrystals having characteristic spectral emissions is further characterized by having one or more characteristic intensities associated with said characteristic spectral emissions.
- 9. A method for providing an identification unit comprising:
selecting a support; providing an identifier comprising a first semiconductor nanocrystal including a first semiconductor material; and associating the semiconductor nanocrystal with the support such that the semiconductor nanocrystal becomes attached to or embedded within the support.
- 10. The method of claim 9, wherein the support comprises a support selected from the group consisting of a bead, a pellet, a disk, a capillary, a hollow fiber, a needle, a solid fiber, a cellulose bead, a pore-glass bead, a silica gel, a polystyrene bead optionally cross-linked with divinylbenzene, a grafted co-poly bead, a poly-acrylamide bead, a latex bead, a dimethylacrylamide bead optionally cross-linked with N,N′-bis-acryloyl ethylene diamine, and a glass particle coated with a hydrophobic polymer and low molecular weight non-cross-linked polystyrene.
- 11. The method of claim 9, wherein the identifier further comprises a second semiconductor nanocrystal including a second semiconductor material and having a spectral emission distinguishable from a spectral emission of the first semiconductor nanocrystal.
- 12. The method of claim 9, wherein the first semiconductor nanocrystal further comprises an overcoating layer at a surface of a semiconductor material of the semiconductor nanocrystal, the overcoating layer including a second semiconductor material.
- 13. The method of claim 9, where the first semiconductor material is a II-VI, a III-V, or IV semiconductor material.
- 14. The method of claim 13, wherein the first semiconductor material includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, AlS, AlP, AlSb, PbS, PbSe, Ge or Si, or ternary or quaternary mixtures thereof.
- 15. The method of claim 12, wherein the second semiconductor material has a higher band gap energy than the first semiconductor material.
- 16. The method of claim 9, further comprising associating the support with an item of interest.
- 17. The method of claim 9, wherein the first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population having an rms deviation in diameter of the semiconductor nanocrystals of no more than 10%.
- 18. The method of claim 9, wherein the first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population having an rms deviation in diameter of the semiconductor nanocrystals of no more than 5%.
- 19. The method of claim 9, wherein first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population when irradiated emits light in a spectral range no more than 60 nanometers full width at half maximum (FWHM).
- 20. The method of claim 9, wherein first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population when irradiated emits light in a spectral range no more than 30 nanometers full width at half maximum (FWHM).
- 21. A method for providing a plurality of identification units comprising:
providing a plurality of items of interest; and associating each item of interest with one or more identifiers, wherein at least one identifier associated with an item of interest includes a first semiconductor nanocrystal.
- 22. The method of claim 21, wherein at least one identifier associated with an item of interest includes a second semiconductor nanocrystal.
- 23. The method of claim 22, wherein the first semiconductor nanocrystal has a spectral emission distinguishable from a spectral emission of the second semiconductor nanocrystal.
- 24. The method of claim 21, wherein more than one identifier associated with an item of interest includes a semiconductor nanocrystal.
- 25. The method of claim 21, wherein the first semiconductor nanocrystal comprises a first semiconductor material.
- 26. The method of claim 25, wherein the first semiconductor material is a II-VI, a III-V, or IV semiconductor material.
- 27. The method of claim 26, wherein the first semiconductor material includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, AlS, AlP, AlSb, PbS, PbSe, Ge or Si, or ternary or quaternary mixtures thereof.
- 28. The method of claim 25, wherein the semiconductor nanocrystal further comprises an overcoating layer including a second semiconductor material at a surface of the semiconductor nanocrystal.
- 30. The method of claim 21, wherein the first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population having an rms deviation in diameter of the semiconductor nanocrystals of no more than 10%.
- 31. The method of claim 21, wherein the first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population having an rms deviation in diameter of the semiconductor nanocrystals of no more than 5%.
- 32. The method of claim 21, wherein first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population when irradiated emits light in a spectral range no more than 60 nanometers full width at half maximum (FWHM).
- 33. The method of claim 21, wherein first semiconductor nanocrystal is a member of a population of semiconductor nanocrystals, the population when irradiated emits light in a spectral range no more than 30 nanometers full width at half maximum (FWHM).
Parent Case Info
[0001] This application is a divisional (and claims the benefit of priority under 35 U.S.C. § 120) of U.S. patent application Ser. No. 10/157,232, filed May 30, 2002, which is a continuation of U.S. patent application Ser. No. 09/160,458, filed Sep. 24, 1998, which claims priority to U.S. patent application Ser. No. 60/101,046, filed on Sep. 18, 1998, each of which is incorporated by reference in its entirety.
Government Interests
[0002] This application was made with government support under Grant Number DMR-9400334 awarded by the National Science Foundation. The United States government may have certain right in the invention.
Provisional Applications (2)
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Number |
Date |
Country |
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60101046 |
Sep 1998 |
US |
|
60100947 |
Sep 1998 |
US |
Divisions (1)
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Number |
Date |
Country |
Parent |
10157232 |
May 2002 |
US |
Child |
10858207 |
Jun 2004 |
US |
Continuations (1)
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Number |
Date |
Country |
Parent |
09160458 |
Sep 1998 |
US |
Child |
10157232 |
May 2002 |
US |